35 results about "Nuclear science" patented technology

The invention provides a conversion algorithm from a CAD model to an MCNP geometric model based on an STEP text, and the algorithm relates to the technical fields of physics and nuclear science. The algorithm is based on the STEP text generated by CAD software, information extraction is carried out on the STEP text, then a geometric algorithm is used for restoring a real model structure, finally conversion is carried out on an INP text format which can be recognized by the MCNP. In order to solve complex model problems, all lattice cell information of a model is stored in a lattice cell tree by adopting a method for constructing the lattice cell tree by the algorithm, and by means of the traverse lattice tree, the INP text format which can be recognized by the MCNP can be output. Outputs of a hook face card and a lattice cell card are free from omission, the position is accurate, and the treatment is flexible.

The invention relates to a method for preparing zirconium deuteride by a high-temperature direct process and belongs to the crossed field of material science and nuclear science. The zirconium deuteride is generated through the reaction of metal zirconium and deuterium at a high temperature. The problems of an industrial large-scale zirconium deuteride preparing technology and preparing purity problems are solved, no complicated production devices are required, required preparing devices are simple and easy to purchase, and the safe construction of a zirconium deuteride production line can be realized under existing factory conditions. The preparing technology is simple and easy to operate, no high-temperature pressurization devices are required in the preparing process, and safe and reliable inert gas protection is provided. The yield, purity and stability of the product are great. The product can be stored for a long time. No three wastes are produced in the production process, so that no damage to the human body and the environment is caused. The method is environment-friendly and green and has great significance in the industrial large-scale safe preparation of the high-purity zirconium deuteride and large-scale application.

The invention relates to a method for inducing the defect annealing based on ionization irradiation, and aims at solving a problem that the particle radiation will cause the displacement damage to a device. The method comprises the steps: calculating the ionization / displacement absorbed dose and range of unit fluence incident particles based on a Monte Carlo computing method; determining the typeof incident particles according to the proportional relation between the ionization and the displacement absorbed dose and the features of a sample, thereby guaranteeing that the incident particles can promote the annealing of existing defect in the sample in a conveying process of the sample. The method is simple in steps, and is easy for operation. The method is used for the technical field of spatial environment effects, nuclear science and application technologies.

The invention relates to a method for preparing titanium deuteride by a high-temperature direct process, belonging to the cross fields of material science and nuclear science. Metal titanium and deuterium gas react at high temperature to generate the titanium deuteride. The method solves the problems of titanium deuteride industrial-scale preparation technique and preparation purity, does not need complex production devices, only needs simple and accessible preparation devices, and thus, can implement safe construction of the titanium deuteride production line under existing plant conditions. The preparation technique is simple and easy to operate, does not need any high-temperature pressurizing or depressurizing device in the preparation process, and is safe and reliable under the protection of inert gas. The product has the advantages of favorable yield, favorable purity and high stability, and can be stored for a long time. The method does not generate three wastes in the production process, is harmless to the human body and environment, is environment-friendly and green, and thus, has important meanings for industrial large-scale safe preparation of high-purity titanium deuteride and large-scale application thereof.

The invention provides an irradiation particle energy selection method capable of simultaneously generating ionization and displacement defects, and belongs to the technical field of space environmental effects, nuclear science and applications. The application objects of the irradiation particle energy selection method include various key materials and devices for spacecrafts. The ionization / displacement absorption dose and range of incident particles per unit injection are calculated under specific material state conditions on the basis of a Monte Carlo calculation method. The energy of theincident particles can be determined according to the proportional relationship between the ionization absorption dose and the displacement absorption dose, so that the condition that stable ionization and displacement defects can be simultaneously generated is ensured.

The invention discloses a non-leakage glove replacement device for a nuclear science glove box. . The invention provides a non-leakage glove replacement device for a nuclear science glove box. The device has good sealing performance and can effectively ensure that the glove box used in nuclear science research has no nuclear leakage and no water and oxygen leakage during glove replacement.

The invention provides a device for simultaneously generating ionization and displacement defect signals for characterizing the formation and annealing state of different types of particle radiation-induced ionization and displacement defects, and a preparation method thereof, belonging to the field of nuclear science and technology. The present invention includes a collector region, a base region, n emitter regions, an emitter, a base and a collector; the doping concentration of the collector region is less than 1E15 / cm 3 The distance d from the long side of the outer edge of the base region to the outer edge of the collector region is in the range of 0.1 to 300 μm, and the distance e from the wide side of the outer edge of the base region to the outer edge of the collector region is in the range of 0.1 to 300 μm; the base region is doped The concentration is 1E15 / cm 3 ~1E17 / cm 3 ; The ratio of the long side a to the wide side b of the emission region is in the range of 500:1 to 1:500, and the depth of the diffusion junction is between 0.1 μm and 3.0 μm; the distance between two adjacent emission regions is not less than a / 2, Not more than 5a; the doping concentration of the emitter region is 5E15 / cm 3 ~1E20 / cm 3 .

The invention relates to a bipolar transistor ELDRS (Enhanced Low Dose Rate Sensitivity) suppressing method and belongs to the technical field of space environment effect, nuclear science and application. The method provided by the invention is proposed aiming at a defect of lack of a bipolar transistor ELDRS suppressing means in the prior art. The method includes putting a transistor into a sealed container, vacuumizing the container or filling with protective gas, wherein the transistor is a bipolar transistor; heating the transistor with an electric furnace and performing thermal insulation; cooling the transistor to a room temperature after thermal insulation ends. The method is suitable for anti-radiation treatment on components and parts in electric systems in a spacecraft cabin.

The invention discloses a combined acceleration structure, which belongs to the field of nuclear science and nuclear technology. The structure of the present invention includes a radio frequency quadrupole field part and a separation action radio frequency quadrupole field part, the radio frequency quadrupole field and the separation action radio frequency quadrupole field are directly connected in the same resonant cavity, and the central axes are coaxial. The radio frequency quadrupole field and the separation action radio frequency quadrupole field adopt the same support method. The present invention can not only save another set of high-power transmitter and related high-frequency control system, the total high-frequency power is much smaller than the sum of the power of the two transmitters, but also saves matching components such as high-power electromagnetic lens, The overall size and cost of the accelerator are reduced; the overall transport efficiency of the beam is improved by avoiding the imbalance between the longitudinal and transverse matching of the beam.

The invention belongs to the technical field of nuclear science and engineering, and relates to a device and method for controlling the oxygen content in liquid lead bismuth alloy. The device for controlling the oxygen content in the liquid lead bismuth alloy is mainly characterized in that a heating cavity is formed in front of the liquid inlet end of an oxygen content control chamber, the heating cavity is connected with a liquid metal mechanical pump through the oxygen content control chamber, a liquid inlet end oxygen probe is arranged at the liquid inlet end of the oxygen content control chamber, and a liquid outlet end oxygen probe is arranged at the liquid outlet end of the oxygen content control chamber; a liquid metal flow meter is arranged at the outlet end of the liquid metal mechanical pump, an outlet of the liquid metal flow meter is connected with a liquid lead bismuth alloy valve, and a reflux inlet of the liquid lead bismuth alloy valve is communicated with a liquid storage tank through a reflux pipeline and is communicated with the heating cavity; vacuum pumping and measuring systems are arranged in the liquid storage tank and the oxygen content control chamber. The device and method have the advantages that Ar-H2 mixed gas and reactive oxygen in the liquid lead bismuth alloy conduct chemical reaction in the oxygen content control chamber, and then the oxygen content can be controlled.

The invention relates to a bipolar transistor ELDRS (Enhanced Low Dose Rate Sensitivity) suppressing method and belongs to the technical field of space environment effect, nuclear science and application. The method provided by the invention is proposed aiming at a defect of lack of a bipolar transistor ELDRS suppressing means in the prior art. The method includes putting a transistor into a sealed container, vacuumizing the container or filling with protective gas, wherein the transistor is a bipolar transistor; heating the transistor with an electric furnace and performing thermal insulation; cooling the transistor to a room temperature after thermal insulation ends. The method is suitable for anti-radiation treatment on components and parts in electric systems in a spacecraft cabin.

Bipolar device heterogeneous radiation source ionization damage equivalent evaluation test method, involving radiation tests of materials and devices, belongs to the field of nuclear science and technology, in order to realize the prediction of performance degradation characteristics of bipolar transistors under different types of particle irradiation conditions . The invention is based on a radiation source to establish a performance degradation model to equivalently simulate the ground equivalent simulation test method of radiation damage of other radiation sources, and its application objects include bipolar transistors and other types of bipolar process devices; only by selecting a certain The performance degradation model of bipolar devices can be established by carrying out irradiation experiments with specific energy and types of charged particles under appropriate irradiation flux conditions; by combining the Monte Carlo method to calculate and analyze the damage ability of other types of irradiation sources, you can The radiation damage of different types of radiation sources is normalized to achieve the purpose of predicting the degradation of on-orbit performance. The beneficial effect is that the on-rail ionization damage performance degradation rule of the bipolar transistor can be accurately predicted, and the steps are simple and easy to operate.

The invention belongs to the field of devices for controlling oxygen / corrosion for high-temperature lead-bismuth melt in nuclear science, and relates to a device and a method for automatically controlling oxygen corrosion for high-temperature lead-bismuth melt. The device for automatically controlling the oxygen / corrosion for the high-temperature lead-bismuth melt is characterized by comprising a storage tank; a vacuum system, a temperature control system, a cooling system, an oxygen concentration control system, a sample corrosion experiment system and an automatic control and data processing system are arranged on the storage tank. The device and the method have the advantages that the vacuum of 1*100<-2> Pa can be generated by the vacuum system and is matched with a gas inlet pipeline of an upper cover, a tank can be repeatedly washed by the aid of high-purity Ar gas, and accordingly oxidation of lead and bismuth in early running stages and shutdown phases of the device can be effectively relieved; a water jacket is arranged on an upper cover structure, a plurality of layers of heat-insulation plates are arranged below the upper cover structure, the water jacket, the heat-insulation plates and the cooling system are combined with one another, accordingly, influence of heat conduction and heat radiation of the high-temperature lead and bismuth on the upper cover can be effectively relieved, and components of the upper cover can assuredly normally work in safety ranges when the lead-bismuth melt is operated at the high temperatures of 650 DEG C.

A method for inhibiting the formation of oxide trapped charges based on displacement damage is provided. The invention relates to the field of space environmental effects, nuclear science and appliedtechnology, and solves the radiation damage performance of electronic devices by oxide trapped positive charges and an interface state. The method comprises determining the farthest distance b and theclosest distance c from a passivation layer in an electronic component to the surface; calculating the range t1 of a pre-irradiated incident particle; calculating the ionizing absorbed dose Id1 and the displacement absorbed dose Dd1 of the incident particle in the passivation layer; calculating the value of Log[(Id+Dd) / Dd]; perofrming pre-irradiation and determining the irradiation injection amount [phi]1; calculating the incident depth t2 of an ionizing radiation incident particle; calculating the ionizing absorbed dose Id2 and the displacement absorbed dose Dd2 of the incident particle in the passivation layer; calculating the value of log[(Id2+Dd2) / Dd2];and perform ionizing irradiation. The method changes the inherent displacement defect state in a sample, inhibits the formation of oxide trapped positive charges, and is simple in steps and easy to operate. The method is applied to the research of space environmental effects of electronic components and the anti-radiation reinforcement technology.