Patents
Literature
Hiro is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Hiro

35 results about "Nuclear science" patented technology

Nuclear Science. Nuclear science is the study of sub-atomic particles and their application in various disciplines. Here you can learn about nuclear power plants, atomic theory and radiation.

Device and method for controlling oxygen content in liquid lead bismuth alloy

The invention belongs to the technical field of nuclear science and engineering, and relates to a device and method for controlling the oxygen content in liquid lead bismuth alloy. The device for controlling the oxygen content in the liquid lead bismuth alloy is mainly characterized in that a heating cavity is formed in front of the liquid inlet end of an oxygen content control chamber, the heating cavity is connected with a liquid metal mechanical pump through the oxygen content control chamber, a liquid inlet end oxygen probe is arranged at the liquid inlet end of the oxygen content control chamber, and a liquid outlet end oxygen probe is arranged at the liquid outlet end of the oxygen content control chamber; a liquid metal flow meter is arranged at the outlet end of the liquid metal mechanical pump, an outlet of the liquid metal flow meter is connected with a liquid lead bismuth alloy valve, and a reflux inlet of the liquid lead bismuth alloy valve is communicated with a liquid storage tank through a reflux pipeline and is communicated with the heating cavity; vacuum pumping and measuring systems are arranged in the liquid storage tank and the oxygen content control chamber. The device and method have the advantages that Ar-H2 mixed gas and reactive oxygen in the liquid lead bismuth alloy conduct chemical reaction in the oxygen content control chamber, and then the oxygen content can be controlled.
Owner:INST OF MODERN PHYSICS CHINESE ACADEMY OF SCI

Device and method for automatically controlling oxygen/corrosion for high-temperature lead-bismuth melt

The invention belongs to the field of devices for controlling oxygen/corrosion for high-temperature lead-bismuth melt in nuclear science, and relates to a device and a method for automatically controlling oxygen corrosion for high-temperature lead-bismuth melt. The device for automatically controlling the oxygen/corrosion for the high-temperature lead-bismuth melt is characterized by comprising a storage tank; a vacuum system, a temperature control system, a cooling system, an oxygen concentration control system, a sample corrosion experiment system and an automatic control and data processing system are arranged on the storage tank. The device and the method have the advantages that the vacuum of 1*100<-2> Pa can be generated by the vacuum system and is matched with a gas inlet pipeline of an upper cover, a tank can be repeatedly washed by the aid of high-purity Ar gas, and accordingly oxidation of lead and bismuth in early running stages and shutdown phases of the device can be effectively relieved; a water jacket is arranged on an upper cover structure, a plurality of layers of heat-insulation plates are arranged below the upper cover structure, the water jacket, the heat-insulation plates and the cooling system are combined with one another, accordingly, influence of heat conduction and heat radiation of the high-temperature lead and bismuth on the upper cover can be effectively relieved, and components of the upper cover can assuredly normally work in safety ranges when the lead-bismuth melt is operated at the high temperatures of 650 DEG C.
Owner:INST OF MODERN PHYSICS CHINESE ACADEMY OF SCI

Method for preparing zirconium deuteride by high-temperature direct process

The invention relates to a method for preparing zirconium deuteride by a high-temperature direct process and belongs to the crossed field of material science and nuclear science. The zirconium deuteride is generated through the reaction of metal zirconium and deuterium at a high temperature. The problems of an industrial large-scale zirconium deuteride preparing technology and preparing purity problems are solved, no complicated production devices are required, required preparing devices are simple and easy to purchase, and the safe construction of a zirconium deuteride production line can be realized under existing factory conditions. The preparing technology is simple and easy to operate, no high-temperature pressurization devices are required in the preparing process, and safe and reliable inert gas protection is provided. The yield, purity and stability of the product are great. The product can be stored for a long time. No three wastes are produced in the production process, so that no damage to the human body and the environment is caused. The method is environment-friendly and green and has great significance in the industrial large-scale safe preparation of the high-purity zirconium deuteride and large-scale application.
Owner:BEIJING INSTITUTE OF TECHNOLOGYGY

Combined accelerating structure

The invention discloses a combined accelerating structure belonging to the fields of nuclear science and nuclear technology. The combined accelerating structure comprises a radio-frequency quadrupole field part and a separation function radio-frequency quadrupole field part. The radio-frequency quadrupole field part and the separation function radio-frequency quadrupole field are directly connected in the same resonant cavity and center lines of the radio-frequency quadrupole field part and the separation function radio-frequency quadrupole field are coaxial. The radio-frequency quadrupole field part and the separation function radio-frequency quadrupole field adopt the same support mode. The invention not only can save another set of high-powder transmitter and relevant high-frequency control systems so that the total high-frequency power is greatly lower than the summation of the power of two transmitters, but also save matched elements of a high-power electromagnetic lens and the like, so that the overall dimension and the cost of an accelerator can be reduced; in addition, the overall delivery efficiency of beam current can be improved because of avoiding the unbalance of longitudinal and transverse matching of the beam current.
Owner:PEKING UNIV

Method for directly preparing zirconium deuteride by using high temperature direct method

The invention relates to a method for directly preparing zirconium deuteride by using a high temperature direct method, belonging to the field of material science and nuclear science. According to the method, metal zirconium is reacted with deuterium gas, and thus zirconium deuteride is generated. By adopting the method, the problems of industrial-scale zirconium deuteride preparation techniques and preparation purity are solved, no complex production device is needed, the necessary preparation devices are simple and easy to purchase, and safety construction of a zirconium deuteride production line can be achieved under the existing factory conditions; the preparation process is simple and easy to operate, no high temperature pressurizing/depressurizing device is used in the preparation process, and due to protective inert gases, the production is safe and reliable; the zirconium deuteride product is relatively good in yield and purity, good in stability and can be stored for a long time; the production process is free of three wastes, is harmless for human bodies and the environment, is environment-friendly, and is significant for safe industrial scale preparation and large-scale application of high-purity zirconium deuteride.
Owner:BEIJING INSTITUTE OF TECHNOLOGYGY

Method for calculating ionization absorbed dose of radiation sensitive part based on absorbed dose depth distribution

The invention provides a method for calculating the ionization absorbed dose of a radiation sensitive part based on absorbed dose depth distribution, and belongs to the technical field of spatial environment effect and nuclear science and application. The method comprises the steps: selecting a material with the known one-dimensional ionization absorbed dose depth distribution, and converting theabsorbed dose depth distribution of the material into the distribution of absorbed dose with equivalent depth; carrying out the regional dividing of a structure where the radiation sensitive part is located, determining the material types of all regions, the material thicknesses of all regions and the maximum degree of the connection lines between the radiation sensitive part and the regions; converting the thicknesses of the materials of all regions into equivalent thicknesses, determining the absorbed dose and unidirectional absorbed dose at each equivalent thickness, and finally calculatingand obtaining the ionization absorbed dose of a sensitive part in the structure. The method solves problems in the prior art that the calculation of the ionization absorbed dose of the radiation sensitive part is complex and the consumed time is long. The method can be used for quickly evaluating the ionization absorbed dose of complex structures, such as a spacecraft.
Owner:HARBIN INST OF TECH

A device for simultaneously generating ionization and displacement defect signals and its preparation method

The invention provides a device for simultaneously generating ionization and displacement defect signals for characterizing the formation and annealing state of different types of particle radiation-induced ionization and displacement defects, and a preparation method thereof, belonging to the field of nuclear science and technology. The present invention includes a collector region, a base region, n emitter regions, an emitter, a base and a collector; the doping concentration of the collector region is less than 1E15 / cm 3 The distance d from the long side of the outer edge of the base region to the outer edge of the collector region is in the range of 0.1 to 300 μm, and the distance e from the wide side of the outer edge of the base region to the outer edge of the collector region is in the range of 0.1 to 300 μm; the base region is doped The concentration is 1E15 / cm 3 ~1E17 / cm 3 ; The ratio of the long side a to the wide side b of the emission region is in the range of 500:1 to 1:500, and the depth of the diffusion junction is between 0.1 μm and 3.0 μm; the distance between two adjacent emission regions is not less than a / 2, Not more than 5a; the doping concentration of the emitter region is 5E15 / cm 3 ~1E20 / cm 3 .
Owner:HARBIN INST OF TECH

Method for inhibiting formation of oxide trapped charges based on displacement damage

A method for inhibiting the formation of oxide trapped charges based on displacement damage is provided. The invention relates to the field of space environmental effects, nuclear science and appliedtechnology, and solves the radiation damage performance of electronic devices by oxide trapped positive charges and an interface state. The method comprises determining the farthest distance b and theclosest distance c from a passivation layer in an electronic component to the surface; calculating the range t1 of a pre-irradiated incident particle; calculating the ionizing absorbed dose Id1 and the displacement absorbed dose Dd1 of the incident particle in the passivation layer; calculating the value of Log[(Id+Dd)/Dd]; perofrming pre-irradiation and determining the irradiation injection amount [phi]1; calculating the incident depth t2 of an ionizing radiation incident particle; calculating the ionizing absorbed dose Id2 and the displacement absorbed dose Dd2 of the incident particle in the passivation layer; calculating the value of log[(Id2+Dd2)/Dd2];and perform ionizing irradiation. The method changes the inherent displacement defect state in a sample, inhibits the formation of oxide trapped positive charges, and is simple in steps and easy to operate. The method is applied to the research of space environmental effects of electronic components and the anti-radiation reinforcement technology.
Owner:HARBIN INST OF TECH

Method for calculating radiation sensitive part displacement absorption dose based on absorption dose depth distribution

The invention provides a method for calculating the radiation sensitive part displacement absorption dose based on absorption dose depth distribution, and belongs to the technical field of space environment effect, nuclear science and application. The method includes selecting a material with known one-dimensional displacement absorption dose depth distribution, converting the displacement absorption dose depth distribution into the absorption dose equivalent thickness distribution; performing the area division on the structure where the radiation sensitive part is located, determining the types of materials in each region and the thickness of each material; and then converting the thickness of the material in each region into the equivalent thickness, determining the absorption dose of each equivalent thickness and the one-way absorption dose, and finally, calculating and obtaining the displacement absorption dose of the sensitive part in the structure. The problems that a radiation sensitive part of the prior art is complex in displacement absorption dose calculation and long in time consumption are solved. The method can be used for rapidly evaluating the displacement absorptiondose of complex structures such as a spacecraft.
Owner:HARBIN INST OF TECH

Device and method for controlling oxygen content in liquid lead-bismuth alloy

The invention belongs to the technical field of nuclear science and engineering, and relates to a device and method for controlling the oxygen content in liquid lead bismuth alloy. The device for controlling the oxygen content in the liquid lead bismuth alloy is mainly characterized in that a heating cavity is formed in front of the liquid inlet end of an oxygen content control chamber, the heating cavity is connected with a liquid metal mechanical pump through the oxygen content control chamber, a liquid inlet end oxygen probe is arranged at the liquid inlet end of the oxygen content control chamber, and a liquid outlet end oxygen probe is arranged at the liquid outlet end of the oxygen content control chamber; a liquid metal flow meter is arranged at the outlet end of the liquid metal mechanical pump, an outlet of the liquid metal flow meter is connected with a liquid lead bismuth alloy valve, and a reflux inlet of the liquid lead bismuth alloy valve is communicated with a liquid storage tank through a reflux pipeline and is communicated with the heating cavity; vacuum pumping and measuring systems are arranged in the liquid storage tank and the oxygen content control chamber. The device and method have the advantages that Ar-H2 mixed gas and reactive oxygen in the liquid lead bismuth alloy conduct chemical reaction in the oxygen content control chamber, and then the oxygen content can be controlled.
Owner:INST OF MODERN PHYSICS CHINESE ACADEMY OF SCI

Method for calculating energy spectrum behind charged particle protection layer

The invention relates to a method for calculating an energy spectrum behind a charged particle protection layer, and aims at solving the problems in the prior art that the calculation speed of an energy spectrum after an orbital charged particle protection layer is slow, the calculation time is long and the spatial particle radiation will cause the shortening of the service life of an electronic device and then cause big loss. The process comprises the steps: determining a differential energy spectrum of orbital incident particles; determining a protection material and the thickness of the protection material; determining the incident angle of the incident particles; calculating the relation between E'1 and the range and thickness of the protection material if the incident particles are electrons; calculating the relation between each of E'2, E'3, E'4 and E'5 and the range and thickness of the protection material if the incident particles are protons or ions; and calculating an unelastic cross section of the incident particles and the protection material; and respectively calculating the differential energy spectrums behind electron, proton and ion protection layers. According to the invention, the method is used in the technical field of spatial environment effects, nuclear sciences, and application technologies.
Owner:HARBIN INST OF TECH

Test method for equivalent evaluation of ionization damage of heterogeneous radiation sources for bipolar devices

Bipolar device heterogeneous radiation source ionization damage equivalent evaluation test method, involving radiation tests of materials and devices, belongs to the field of nuclear science and technology, in order to realize the prediction of performance degradation characteristics of bipolar transistors under different types of particle irradiation conditions . The invention is based on a radiation source to establish a performance degradation model to equivalently simulate the ground equivalent simulation test method of radiation damage of other radiation sources, and its application objects include bipolar transistors and other types of bipolar process devices; only by selecting a certain The performance degradation model of bipolar devices can be established by carrying out irradiation experiments with specific energy and types of charged particles under appropriate irradiation flux conditions; by combining the Monte Carlo method to calculate and analyze the damage ability of other types of irradiation sources, you can The radiation damage of different types of radiation sources is normalized to achieve the purpose of predicting the degradation of on-orbit performance. The beneficial effect is that the on-rail ionization damage performance degradation rule of the bipolar transistor can be accurately predicted, and the steps are simple and easy to operate.
Owner:HARBIN INST OF TECH

Automatic oxygen control/corrosion device and method in high temperature lead and bismuth melt

The invention belongs to the field of devices for controlling oxygen / corrosion for high-temperature lead-bismuth melt in nuclear science, and relates to a device and a method for automatically controlling oxygen corrosion for high-temperature lead-bismuth melt. The device for automatically controlling the oxygen / corrosion for the high-temperature lead-bismuth melt is characterized by comprising a storage tank; a vacuum system, a temperature control system, a cooling system, an oxygen concentration control system, a sample corrosion experiment system and an automatic control and data processing system are arranged on the storage tank. The device and the method have the advantages that the vacuum of 1*100<-2> Pa can be generated by the vacuum system and is matched with a gas inlet pipeline of an upper cover, a tank can be repeatedly washed by the aid of high-purity Ar gas, and accordingly oxidation of lead and bismuth in early running stages and shutdown phases of the device can be effectively relieved; a water jacket is arranged on an upper cover structure, a plurality of layers of heat-insulation plates are arranged below the upper cover structure, the water jacket, the heat-insulation plates and the cooling system are combined with one another, accordingly, influence of heat conduction and heat radiation of the high-temperature lead and bismuth on the upper cover can be effectively relieved, and components of the upper cover can assuredly normally work in safety ranges when the lead-bismuth melt is operated at the high temperatures of 650 DEG C.
Owner:INST OF MODERN PHYSICS CHINESE ACADEMY OF SCI

A Displacement Damage-Based Method for Suppressing the Formation of Oxide Trapped Charges

A method for inhibiting the formation of oxide trapped charges based on displacement damage is provided. The invention relates to the field of space environmental effects, nuclear science and appliedtechnology, and solves the radiation damage performance of electronic devices by oxide trapped positive charges and an interface state. The method comprises determining the farthest distance b and theclosest distance c from a passivation layer in an electronic component to the surface; calculating the range t1 of a pre-irradiated incident particle; calculating the ionizing absorbed dose Id1 and the displacement absorbed dose Dd1 of the incident particle in the passivation layer; calculating the value of Log[(Id+Dd) / Dd]; perofrming pre-irradiation and determining the irradiation injection amount [phi]1; calculating the incident depth t2 of an ionizing radiation incident particle; calculating the ionizing absorbed dose Id2 and the displacement absorbed dose Dd2 of the incident particle in the passivation layer; calculating the value of log[(Id2+Dd2) / Dd2];and perform ionizing irradiation. The method changes the inherent displacement defect state in a sample, inhibits the formation of oxide trapped positive charges, and is simple in steps and easy to operate. The method is applied to the research of space environmental effects of electronic components and the anti-radiation reinforcement technology.
Owner:HARBIN INST OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products