Test method for equivalent evaluation of ionization damage of heterogeneous radiation sources for bipolar devices

Abstract

Bipolar device heterogeneous radiation source ionization damage equivalent evaluation test method, involving radiation tests of materials and devices, belongs to the field of nuclear science and technology, in order to realize the prediction of performance degradation characteristics of bipolar transistors under different types of particle irradiation conditions . The invention is based on a radiation source to establish a performance degradation model to equivalently simulate the ground equivalent simulation test method of radiation damage of other radiation sources, and its application objects include bipolar transistors and other types of bipolar process devices; only by selecting a certain The performance degradation model of bipolar devices can be established by carrying out irradiation experiments with specific energy and types of charged particles under appropriate irradiation flux conditions; by combining the Monte Carlo method to calculate and analyze the damage ability of other types of irradiation sources, you can The radiation damage of different types of radiation sources is normalized to achieve the purpose of predicting the degradation of on-orbit performance. The beneficial effect is that the on-rail ionization damage performance degradation rule of the bipolar transistor can be accurately predicted, and the steps are simple and easy to operate.

Description

technical field [0001] The invention relates to an equivalent evaluation test for ionization damage of heterogeneous radiation sources of materials and devices, and belongs to the field of nuclear science and technology. Background technique [0002] During the in-orbit service of a spacecraft, the influence of the radiation effect of charged particles in the space environment on electronic components must be considered, and the total cumulative energy loss on the incident path of particles is usually dominated by electron energy loss (ionizing radiation effect). The electronic energy loss caused by particles inside the device or material is often characterized by linear energy transfer density (LET, Linear Energy Transfer). LET specifically represents the electronic energy loss per unit length, and the more commonly used unit is MeV cm 2 / mg. When the energy and type of incident particles are certain, the LET values ​​of particles in different materials are approximately e...

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Problems solved by technology

The generation of these two defects will increase the surface recombination rate, increase the recombination electrorheology, and reduce the minority carrier lifetime, which will eventually lead to an increase in the base current, a decrease in the current gain, and an increase in the leakage current of the bipolar transistor under ionizing radiation.

[0005] However, in the actual space environment, various high-energy charged particles exist at the same time, how to perform equivalent evaluation on the ionizing radiation damage of bipolar transistors from different types of radiation sources is a difficult problem at present.

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