10 results about "Linear energy transfer" patented technology

The invention relates to a simulation method for the influence of a radiation environment on the signal transmission characteristics of a microsystem device, and the method comprises the following steps: S1, constructing a three-dimensional model of the microsystem device, and splitting the three-dimensional model into independent grid files according to the types of materials; s2, setting a particle type, energy and an incident region in Geant4, simulating particle bombardment, and outputting single-particle energy deposition data, energy deposition distribution and linear energy transfer (LET) data; s3, establishing a material damage model in MATLAB, and calculating the post-radiation conductivity sigma (t) and relative dielectric constant epsilon r based on particle and substance action mechanism analysis; and S4, updating the material parameters calculated in the step S3 to a device model in the HFSS, simulating a signal transmission characteristic curve in a radiation environment, and analyzing an influence mechanism of radiation on signal transmission. The electrical performance of the micro-system device can be accurately evaluated in different radiation environments, a scientific basis is provided for design and optimization of the micro-system device in a high-radiation environment, and the anti-radiation capability and reliability of the device are effectively improved.

The invention discloses a microsystem single event effect risk assessment method, which comprises the following steps: constructing a device-level model and a circuit-level model, and performing single event effect simulation on a device to obtain single event transient current curves under different linear energy transfer values LET; performing double-index model fitting to obtain an LET threshold value of each module; establishing a fault tree model based on the system architecture, and carrying out quantitative analysis to calculate the fault rate, the unavailability and the average fault interval time of each bottom event; and establishing a fault transmission model based on a Bayesian network, and identifying key risk nodes. According to the method, a circuit-level and system-level combined risk assessment model is innovatively constructed, and comprehensive and accurate assessment of the single event effect risk of the astronavigation microsystem is realized. Through methods such as fault tree modeling and Bayesian network modeling, transmission paths and influence factors of the faults can be deeply analyzed, key nodes of the system faults are identified, and a scientific basis is provided for design optimization and risk prevention and control of the microsystem.

The application provides a single-particle transient pulse simulation model construction method, a simulation method and a simulation model, and relates to the technical field of computer simulation. 2 The method comprises the following steps: obtaining an initial linear energy transfer of a single particle; converting the initial linear energy transfer to obtain a target linear energy transfer, wherein the initial linear energy transfer is in units of MeV·cm / mg, and the target linear energy transfer is in units of electron-hole pairs per unit length; obtaining a radial attenuation length and an incident depth of the single particle when the single particle is incident on a component with a sensitive junction; obtaining a distribution of electron-hole pairs generated by the single particle on an incident path according to the target linear energy transfer, the radial attenuation length and the incident depth of the single particle; and constructing a single-particle transient pulse simulation model according to the distribution. Compared with the prior art, the application solves the problem of how to construct an accurate single-particle transient pulse simulation model, improves research reliability, shortens the research period and reduces research costs.

Apparatus for protection of electronics in a radiation-prone environment from incoming particles that may cause damage, comprises one or more radiation-detecting layers extending at least partially over one or more sides of a radiation-sensitive electronic device that needs protection, the radiation-detecting layer being configured to obtain an estimate of a characteristic, such as the LET (linear energy transfer), of the incoming particle, A stress assessment unit determines whether the measured characteristic implies a threat to the radiation-sensitive electronic device, and if it does, then a protection module associated with the stress-assessment unit powers down all or part of the radiation-sensitive electronic device within a predetermined time after the incoming particle has been detected, thereby to protect the radiation sensitive electronic device from damage due to the detected particle. The power down is typically completed within a short enough time to avoid damage.

A method for evaluating radiation resistance of a semiconductor device under test according to the present invention may comprise the steps of: providing a semiconductor device under test to a heavy ion device to measure a cross-section (σ) value of the semiconductor device under test according to a linear energy transfer (LET) value in a base interval; providing the semiconductor device under test to a pulsed laser device and measuring the cross-section value of the semiconductor device under test according to a laser energy value; and converting the laser energy value provided to the pulsed laser device into a corresponding linear energy transfer value to estimate the cross-section value of the semiconductor device under test according to the linear energy transfer value in intervals other than the base interval.

A control circuit presents, via a user interface, linear energy transfer information that corresponds to optimizing an energy therapy treatment plan (such as a proton therapy treatment plan). Upon detecting certain user input, the control circuit can respond by accessing a precomputed influence matrix to provide corresponding accessed information and then present modified linear energy transfer information via the user interface as a function, at least in part, of that accessed information.

The invention discloses a step-down synchronous DC-DC power supply circuit single event effect modeling simulation method, which comprises the following steps: step 1, constructing a space radiation environment model according to task scene parameters and external shielding conditions, and obtaining energy spectrum distribution and linear energy transfer distribution; 2, establishing a physical model of a circuit device, and obtaining an initial electrical characteristic curve; 3, adjusting parameters by comparing experimental characteristic curves, and calibrating the physical model; 4, setting a particle incidence condition based on linear energy transfer distribution and a calibration model, simulating charge generation, recombination, migration and collection processes, extracting a single-particle transient current waveform, and converting the single-particle transient current waveform into a double-exponential current source; and step 5, constructing a circuit equivalent model, injecting a current source into the sensitive node for transient simulation, and analyzing the influence of a single particle on the circuit function. Through the cross-level integrated process, the simulation accuracy is improved, the fault propagation mechanism can be revealed, and a reliable basis is provided for the anti-radiation design of the spacecraft power supply circuit.

The application provides a method for enhancing second harmonic generation based on a non-linear energy transfer mechanism, obtaining a heterojunction composed of a donor two-dimensional material A and an acceptor two-dimensional material B, and then exciting by a two-photon pumping light source to induce non-linear energy transfer, thereby enhancing the second harmonic generation of the acceptor two-dimensional material B; in the heterojunction, the donor two-dimensional material A is (LA)2(A) n‑1 Pb n I 3n+1 ; wherein LA is a C3-C6 alkylammonium ion or a phenylammonium ion; A is a C1-C2 alkylammonium ion or a formamidate ion; n is 1-4; and the acceptor two-dimensional material B includes at least one of MoS2, MoSe2, WSe2 and h-BN. The application can effectively enhance the SHG of the acceptor material.

The invention provides a single event effect evaluation method of an AI chip, and relates to the technical field of integrated circuits. Comprising the steps of estimating a linear energy transmission threshold value of the single event effect of the AI chip, selecting a preliminary test path, developing a laser test path, processing laser test data, judging a secondary test path, developing a proton test path, judging a proton test result and processing proton test data. Selecting heavy ion test parameters; executing a heavy ion test; and confirming a result. According to the method, a pulse laser, proton and heavy ion combined evaluation system with a linear energy transmission threshold value of 10 MeV. Cm. Mg-1 as a boundary is adopted, cross-method result alignment is realized by adopting threshold value alignment or equal probability equivalent mapping, and a reviewable evidence closed loop is formed in cooperation with minimum heavy ion point calibration; therefore, while conclusion comparability is ensured, machine hour and cost are remarkably reduced, and an evaluation period is shortened.

The application provides a three-dimensional monolithic integrated circuit single particle effect simulation method and device, the method comprising: creating a three-dimensional monolithic integrated circuit model corresponding to a target device; creating a corresponding energy deposition model for each layer of circuit structure model; based on the target incident particles, energy deposition simulation is performed on each energy deposition model to obtain the target LET corresponding to each layer of circuit structure model; based on the target incident particles and the target linear energy transfer value corresponding to each layer of circuit structure model, the single particle effect simulation of the three-dimensional monolithic integrated circuit model is performed; in this way, a corresponding energy deposition model is created for each layer of circuit structure model, energy deposition simulation is performed on each energy deposition model, the target LET corresponding to each layer of circuit structure model is obtained, and the single particle effect simulation of the three-dimensional monolithic integrated circuit model is performed, so as to ensure the accuracy of the simulation result, adjust the structure and parameters of the three-dimensional monolithic integrated circuit according to the simulation result, and improve the reliability of the circuit.