Single-event transient injection simulation method for high-frequency circuits

Abstract

The invention discloses a single-event transient injection simulation method for high-frequency circuits. The single-event transient injection simulation method includes creating a device model of transistors injected with heavy ions; solving equations of a numerical computation model of semiconductor devices to acquire an I-V characteristic curve of the device model; calibrating I-V characteristics of the device model; adding a single-even transient physical model caused by the heavy ions to the numerical computation model of the semiconductor devices; acquiring a time-varying curve of transient drain current of the transistors with different grid widths under different LET (linear energy transfer) values of the heavy ions and different drain bias conditions by means of numerical computation; creating a single-event transient characteristic database of the transistor according to the time-varying curve; and exchanging data between the single-event transient characteristic database of the transistors and a circuit model by the aid of a Verilog-A model of a circuit simulation program, and the like. The single-event transient injection simulation method has the advantages that single-event transient injection is implemented, and problems of long time consumption and difficulty in convergence in an existing device / circuit hybrid simulation method are effectively solved.

Description

technical field [0001] The invention relates to the technical field of transient radiation in radiation-resistant hardened microelectronics and solid electronics, in particular to a single-particle transient effect injection simulation method for high-frequency circuits. Background technique [0002] When the integrated circuit is applied in the space environment, the space high-energy ions will enter the circuit and ionize with the semiconductor material in the circuit to generate electron-hole pairs. After the electron-hole pairs are collected by the circuit nodes, the circuit function will be affected. Because of this This effect is the result of the action of a single particle, so it is called a single event effect. [0003] Single event transient (Single Event Transients, SET) is a kind of soft error of single event effect, which is named after a single high-energy particle incident on a sensitive node of a circuit and generates a transient pulse at the node. Single-ev...

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Problems solved by technology

[0011] The purpose of the invention of the present invention is to replace the device model with the SET effect in the device / circuit hybrid simulation method with a single-event transient characteristic database for the device / circuit hybrid simulation method, which has accurate results but takes a long time and is difficult to converge. -A (hardware description language written for analog circuits) module calls the database to realize the coupling process between devices and circuits. Due to the disadvantages of time length and difficulty in convergence, a simulation method for single event transient effect injection for high frequency circuits was established

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