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175 results about "High energy photon" patented technology

High energy photons mean the photons whose frequency is very high.(relatively) If the frequency is high then from this equation E = hf (where E is energy and 'h' is Planck's constant.) energy is also high. Thats what we really mean when we talk about high energy photons. By high energy photons we ''usually'' mean gamma photons...

Arrangement for generating extreme ultraviolet (EUV) radiation based on a gas discharge

The invention is directed to a method and an arrangement for generating extreme ultraviolet (EUV) radiation, i.e., radiation of high-energy photons in the wavelength range from 11 to 14 nm, based on a gas discharge. The object of the invention, to find a novel possibility for generating EUV radiation in which an extended life of the system is achieved with stable generation of a dense, hot plasma column, is met according to the invention in that a preionization discharge is ignited between two parallel disk-shaped flat electrodes prior to the main discharge by a surface discharge along the superficies surface of a cylindrical insulator with a plasma column generated through the gas discharge with pulsed direct voltage, which preionization discharge carries out an ionization of the working gas in the discharge chamber by means of fast charged particles. The preionization discharge is triggered within a first electrode housing and the main discharge takes place between a narrowed output of the first electrode housing and a part of the second electrode housing close to the outlet opening of the discharge chamber. The plasma develops in a part of the second electrode housing covered by a tubular insulator and, as a result of the current-induced magnetic field, contracts to form a dense, hot plasma column, one end of which is located in the vicinity of the outlet opening of the second electrode housing.
Owner:USHIO DENKI KK

Three dimensional radiation detector

A pixelated detector assembly comprising a stack of thin detector crystals, each detector crystal having a pair of planar surfaces bound by edges substantially thinner than the dimensions of the surfaces. The stack is disposed such that the radiation to be detected is incident on one set of edges of the stack of detector crystals. The dimension of the planar surfaces in the general direction of incidence of the radiation incidence is sufficient to ensure that substantially all of the high energy photons to be detected are absorbed within the depth of the detector assembly. Each of the detector crystals has a two-dimensional pixelated anode array formed on one of its planar surfaces. A cathode is formed on its opposite planar surface, preferably covering substantially all of the surface. The position of interaction of a photon in the plane perpendicular to the direction of the incident radiation, is determined by which of the detector crystals in the stack detects the absorption, and by which of the rows of pixelated anodes in that crystal detects the absorption. The depth of interaction of a photon is determined by the location of the particular anode pixel in the above-mentioned row of pixelated anodes where the photon absorption is detected. The detector assembly is thus able to detect the point of interaction of a photon in all three dimensions.
Owner:ORBOTECH LTD

Three dimensional radiation detector

A pixelated detector assembly comprising a stack of thin detector crystals, each detector crystal having a pair of planar surfaces bound by edges substantially thinner than the dimensions of the surfaces. The stack is disposed such that the radiation to be detected is incident on one set of edges of the stack of detector crystals. The dimension of the planar surfaces in the general direction of incidence of the radiation incidence is sufficient to ensure that substantially all of the high energy photons to be detected are absorbed within the depth of the detector assembly. Each of the detector crystals has a two-dimensional pixelated anode array formed on one of its planar surfaces. A cathode is formed on its opposite planar surface, preferably covering substantially all of the surface. The position of interaction of a photon in the plane perpendicular to the direction of the incident radiation, is determined by which of the detector crystals in the stack detects the absorption, and by which of the rows of pixelated anodes in that crystal detects the absorption. The depth of interaction of a photon is determined by the location of the particular anode pixel in the above-mentioned row of pixelated anodes where the photon absorption is detected. The detector assembly is thus able to detect the point of interaction of a photon in all three dimensions.
Owner:ORBOTECH LTD

Method and apparatus for the identification of lithospheric or shielded material deposits by doppler-shifted response photon spectra from interrogation by ionizing radiation

A method and apparatus for the remote, non-invasive detection or characterization of materials manifests a controlled temperature perturbation to the sample material location concurrently with sample interrogation by ionizing radiation and with detection of the response emission energy spectra. This configuration induces and detects Doppler effects manifested at the sample location, allowing material inventory and composition measurements, and allowing a comparative reduction of the exposure duration compared to other isothermal proportional count, coincidence count or spectral analysis techniques. The method and apparatus apply primarily to the detection of elements and isotopes in baggage handling, cargo inspection, chemical characterization, process control and geologic operations, though the method and apparatus are not restricted to these applications. Though the magnitudes of the measured effects are substance specific, the contributing physical processes are not strictly material dependent, allowing method and apparatus applications to almost any high-energy photon-emitting material in multiple applications.
Owner:GRATTON LUCA JOSEPH
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