92results about "Radiation hardening" patented technology

In-place resynthesis for static memory (SRAM) based Field Programmable Gate Arrays (FPGAs) toward reducing sensitivity to single event upsets (SEUs). Resynthesis and remapping are described which have a low overheard and improve FPGA designs without the need of rerouting LUTs of the FPGA. These methods include in-place reconfiguration (IPR), in-place X-filling (IPF), and in-place inversion (IPV), which reconfigure LUT functions only, and can be applied to any FPGA architecture. In addition, for FPGAs with a decomposable LUT architecture (e.g., dual-output LUTs) an in-place decomposition (IPD) method is described for remapping a LUT function into multiple smaller functions leveraging the unused outputs of the LUT, and making use of built-in hard macros in programmable-logic blocks (PLBs) such as carry chain or adder. Methods are applied in-place to mapped circuits before or after routing without affecting placement, routing, and design closure.

The invention relates to a radiation-proof self-recovery over-current/short-circuit protection circuit for a satellite. On the basis of a line structure, the self-recovery over-current/short-circuit protection function is realized. Moreover, the circuit has advantages of reasonable design, small size, and light weight. The radiation-proof self-restoring over-current/short-circuit protection circuit is composed of a power supply module, a triode driver module, a VDMOS tube module including a VDMOS tube Q2, a current detection, amplifier and comparator module, a trigger feedback module having a D trigger U3, and a precision sampling resistor RS1 connected in series to a bus. The power supply module is used for providing power for the current detection, amplifier and comparator module and the trigger feedback module through buses. The input terminal of the triode driver module is connected with an input signal of the control circuit and the output terminal is connected with a gate terminal of the VDMOS tube Q2; and a source end of the VDMOS tube Q2 is connected with the bus by the precision sampling resistor RS1 and a drain end is grounded by a resistor R13. The current detection, amplifier and comparator module consists of a current detection chip U1 for current detection and signal amplification and a comparator U2.

This invention comprises a layout method to effectively protect logic circuits against soft errors (non-destructive errors) and circuit cells, with layout, which are protected against soft errors. In particular, the method protects against cases where multiple nodes in circuit are affected by a single event. These events lead to multiple errors in the circuit, and while several methods exist to deal with single node errors, multiple node errors are very hard to deal with using any currently existing protection methods. The method is particularly useful for CMOS based logic circuits in modem technologies (≦90 nm), where the occurrence of multiple node pulses becomes high (due to the high integration level). It uses a unique layout configuration, which makes the circuits protected against single event generated soft-errors.

A digital circuit with adaptive resistance to single event upset. A novel transient filter is placed within the feedback loop of each latch in the digital circuit to reject pulses having a width less than T, where T is the longest anticipated duration of transients. The transient filter includes a first logic element having a controllable inertial delay and a second logic element coupled to an output of the first logic element. A first controller provides a control voltage VcR to each first logic element to control a rise time of the first logic element to be equal to T. A second controller provides a control voltage VcF to each first logic element to control a fall time of the first logic element to be equal to T.

An integrated system mitigates the effects of a single event upset (SEU) on a reprogrammable field programmable gate array (RFPGA). The system includes (i) a RFPGA having an internal configuration memory, and (ii) a memory for storing a configuration associated with the RFPGA. Logic circuitry programmed into the RFPGA and coupled to the memory reloads a portion of the configuration from the memory into the RFPGA's internal configuration memory at predetermined times. Additional SEU mitigation can be provided by logic circuitry on the RFPGA that monitors and maintains synchronized operation of the RFPGA's digital clock managers.

The invention discloses a triple-modular-redundancy anti-radiation reinforced clock generation circuit based on phase-locked loops. The circuit comprises three independent phase-locked loops in parallel connection, a voting unit and a digital filtering unit; when at least two of CK1, CK2 and CK2 are the same in level, the at least two signals CK of the same level are transmitted to the digital filtering unit via voting, the digital filtering processes the signals CK obtained by voting, and the signals are output after removing burrs if there are burrs; and the signals are output directly if there are no burrs. According to the invention, a triple-modular-redundancy structure of a phase-locked loop structure is used, final output of the system is not influenced if abnormity occurs in any one of the three phase-locked loops, immunity against single-particle transient state is high, and the immunity against single-particle transient state is higher than that of a manner that only sensitive nodes in the phase-locked loops are reinforced.

A circuit structure (200) for suppressing single event transients (SETs) or glitches in digital electronic circuits is provided. The circuit structure includes a first input (100) which receives an output of a digital electronic circuit (A), a second input (100′) which receives a redundant or duplicated output of the digital electronic circuit (A′), and two sub-circuits (102, 106) that each receive the inputs and have one output. One of the sub-circuits is insensitive to a change in the value of one of its inputs when the inputs are in a first logic state and the other sub-circuit is insensitive to a change in the value of one of the inputs when the inputs are in a second, inverted logic state. The sub-circuit outputs are input into a two-input multiplexer (202) which has its output (204) connected to its selection port (SEL), and the sub-circuits are arranged so that the sub-circuit which is insensitive to a change in the value of one of its inputs is selected whenever the output of the multiplexer changes. The multiplexer output (204) is provided as a final output in which SETs and glitches have been suppressed.

An apparatus and method for transmitting signals between two clock domains in which at least one of a phase and a frequency of clock signals in the two clock domains is misaligned. The apparatus includes a first primary interface and a first redundant interface in the first clock domain for receiving a primary signal and a first checking signal respectively, and a second primary interface and second redundant interface in the second clock domain for outputting the primary signal and a second redundant signal respectively. The primary signal and the checking signals are separated by a predetermined time delay and the second checking signal is generated in the second clock domain based on the primary signal. Checking circuitry is provided in the second clock domain to perform an error checking procedure based on the two checking signals and to provide the second checking signal to the second redundant interface.

Realizing that rather than protect electronic circuitry, electrostatic discharge networks when hit by cosmic rays and charged particles, can actually cause the electronic circuitry in satellites and other space applications to fail, the inventor created an ESD network having a redundant voltage clamping element in series with a first voltage clamping element between two voltage pads. The ESD network may be connected to a power voltage pad or a signal voltage pad either directly or through a dummy voltage pad. The voltage clamping elements may further comprise an array of unit cells wherein the array is electrically equivalent to single large transistors currently used in ESD networks. By creating an ESD network as an array of unit cells, benefits greater than those obtained by using a single transistor as a clamping or a trigger element are realized—such as increased ballast resistance and less overall damage to the circuitry resulting from cosmic rays and particles.

The invention is a microcircuit configured as a compact, radiation hardened, low-power general purpose I/O expander. The expander may be controlled by an external microcontroller or central processing unit through a serial interface. The expander provides a simple solution to miniaturize static parallel I/O signals using a simplified serial interface such as I²C or SPI.

A packaged component may include an interposer and integrated circuit dies mounted on the interposer. At least one of the dies may be a radiation-hardened integrated circuit die, whereas the remaining dies may be non-radiation-hardened dies. If desired, the interposer may be a radiation-hardened interposer whereas the integrated circuit dies may be non-radiation-hardened dies. The radiation-hardened die or the radiation-hardened interposer may include monitor circuitry that is used to test non-radiation-hardened circuitry of the packaged component. Test results may be stored in a database at the monitor circuitry or transmitted to external devices such as a server. The monitor circuitry may be used to reconfigure failed circuitry or may control multiplexing circuitry in the interposer to functionally replace the failed circuitry. If desired, the monitor circuitry may adjust power consumption of non-radiation-hardened circuitry based on the test results.

The present invention relates to a compact, low power, radiation-hardened-by-design 8-channel analog multiplexer ASIC, a 0.25 μm complementary metal-oxide semiconductor (CMOS); a 500 krad total ionization dose and single event latchup which is greater than the linear energy transfer (LET) 120 MeV-sq. cm/mg; eight channels for 8-to-1 multiplexing; a three nanosecond break-before-make decoder; an active low enable pin; and an on-resistance of less than 500 ohms from input to output pads.

A circuit including a data storage element; first and second input circuitry coupled respectively to first and second inputs of the data storage element and each including a plurality of components adapted to generate, as a function of an initial signal, first and second input signals respectively provided to the first and second inputs; wherein the data storage element includes a first storage node and is configured such that a voltage state stored at the first storage node is protected from a change in only one of the first and second input signals by being determined by the conduction state of a first transistor coupled to the first storage node and controlled based on the first input signal and by the conduction state of a second transistor coupled to the first storage node and controlled based on the second input signal.