The invention belongs to the technical field of
wide bandgap semiconductor photoelectric detectors, and relates to a GaN-based p-i-n type
ultraviolet detector with a vertical structure on a
metal molybdenum substrate.
Metal molybdenum is adopted as a substrate, a patterned back
electrode layer is arranged on the upper surface of the
metal molybdenum substrate, a molybdenum
diffusion barrier layer is arranged on the upper surface, not covered by the patterned back
electrode layer, of the
metal molybdenum substrate, and a GaN buffer layer, an n-type GaN layer, an n-type Al < x > Ga < 1-x > N layer, an i-type Al < y > Ga < 1-y > N layer and a p-type Al < z > Ga < 1-z > N layer are sequentially and transversely grown on the upper surfaces of the patterned back
electrode layer and the molybdenum
diffusion barrier layer in an epitaxial manner, a
passivation layer is arranged on the upper surface of the p-type Al < z > Ga < 1-z > N layer, a groove is formed in the
passivation layer until the p-type Al < z > Ga < 1-z > N layer is exposed, and a p-type electrode is arranged in the groove of the
passivation layer. According to the invention,
cracking of each GaN-based film layer in the
ultraviolet detector caused by thermal stress is avoided, the
spectral response rate is increased, and the
response time is shortened.