The invention relates to a structure and a preparation method of a surface electric field enhanced PIN photoelectric detector, and belongs to photoelectric detectors. The PIN photoelectric detector is characterized in that a p-type heavily doped region 106 is selectively added in a single p-type lightly doped region 105 which originally covers the whole photosensitive surface, the p-type heavily doped region 106 is enabled to be connected with a p-type ohmic contact layer, thereby enabling a longitudinal electric field to be enhanced, improving the response speed of the detector, introducing a transverse electric field at the same time, increasing transport channels of photoproduction holes, reducing the transport resistance, reducing nonradiative recombination when the photoproduction holes are transported to an electrode in the p-type lightly doped region 105, improving the collection efficiency of the photoproduction holes, and then effectively improving the quantum efficiency. The structural design and the preparation process provided by the invention of the surface electric field enhanced PIN photoelectric detector solve a problem that a photoelectric detector with a traditional structure is low in collection efficiency for photoproduction carriers, and improve the spectral response of devices.