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204 results about "Spectral responsivity" patented technology

A photovoltaic (PV) device’s spectral responsivity describes its ability to convert light of various wavelengths to electricity. It is often reported as the ratio of device current divided by incident-beam power (e.g., A/W) or device current divided by incident photon flux (i.e., quantum efficiency).

Direct detector for terahertz radiation

A direct detector for terahertz radiation comprises a grating-gated field-effect transistor with one or more quantum wells that provide a two-dimensional electron gas in the channel region. The grating gate can be a split-grating gate having at least one finger that can be individually biased. Biasing an individual finger of the split-grating gate to near pinch-off greatly increases the detector's resonant response magnitude over prior QW FET detectors while maintaining frequency selectivity. The split-grating-gated QW FET shows a tunable resonant plasmon response to FIR radiation that makes possible an electrically sweepable spectrometer-on-a-chip with no moving mechanical optical parts. Further, the narrow spectral response and signal-to-noise are adequate for use of the split-grating-gated QW FET in a passive, multispectral terahertz imaging system. The detector can be operated in a photoconductive or a photovoltaic mode. Other embodiments include uniform front and back gates to independently vary the carrier densities in the channel region, a thinned substrate to increase bolometric responsivity, and a resistive shunt to connect the fingers of the grating gate in parallel and provide a uniform gate-channel voltage along the length of the channel to increase the responsivity and improve the spectral resolution.
Owner:NAT TECH & ENG SOLUTIONS OF SANDIA LLC

Low-cost on-line and in-line spectral sensors based on solid-state source and detectors combinations for monitoring lubricants and functional fluids

A series of optical spectral sensors is based on a combination of solid-state sources (illumination) and detectors housed within an integrated package that includes the interfacing optics and acquisition and processing electronics. The focus is on low cost and the fabrication of the sensor is based on techniques that favor mass production. Materials and components are selected to support low-cost, high volume manufacturing of the sensors. Spectral selectivity is provided by the solid-state source(s) thereby eliminating the need for expensive spectral selection components. The spectral response covers the range from the visible (400 nm) to the mid-infrared (25,000 nm/25.0 μm), as defined by the availability of suitable low-cost solid-state source devices. A refractive optical system is employed, primarily in an internal reflection mode, allowing a selection of sample handling tools, including, but not restricted to internal reflectance and transmittance. A secondary channel allowing for light scattering or fluorescence methods is an option. The targeted applications of the sensing devices are for lubricants and functional fluids in the heavy equipment, automotive and transportation industries. A source reference channel is included to provide measurement stability and temperature compensation.
Owner:SENTELLIGENCE

Broadband imaging device

This invention relates to imaging device and its related transferring technologies to independent substrate able to attain significant broadband capability covering the wavelengths from ultra-violet (UV) to long-Infrared. More particularly, this invention is related to the broadband image sensor (along with its manufacturing technologies), which can detect the light wavelengths ranges from as low as UV to the wavelengths as high as 20 μm covering the most of the wavelengths using of the single monolithic image sensor on the single wafer. This invention is also related to the integrated circuit and the bonding technologies of the image sensor to standard integrated circuit for multicolor imaging, sensing, and advanced communication. Our innovative approach utilizes surface structure having more than micro-nano-scaled 3-dimensional (3-D) blocks which can provide broad spectral response. Utilizing multiple micro-nano scaled blocks help to increase the absorption spectra more than the material used as the absorption layer. In addition, utilizing the multiple nano-scaled 3-D blocks help to increase the absorption over the wavelength due to the multiple reflections and diffractions inside the 3-D structures. The absorption layers will be designed to achieve the required quantum efficiency and also required speed.
Owner:BANPIL PHOTONICS

Optical detector based on two-dimensional stratiform atomic crystal materials

InactiveCN103219403AStrong light absorption propertiesAdjust and control the detection spectrum rangeSemiconductor devicesSpectral responsivityGraphene
The invention discloses an optical detector based on two-dimensional stratiform atomic crystal materials. The optical detector comprises a silicon substrate coated with silica, a first graphene conducting layer, a two-dimensional stratiform atomic crystal semiconductor material layer and a second graphene conducting layer are sequentially coated on the silicon substrate coated with the silica in a superposition mode, and the first graphene conducting layer and the second graphene conducting layer respectively form heterogeneous structures with the two-dimensional stratiform atomic crystal semiconductor material layer. One end of the first graphene conducting layer and one end of the second graphene conducting layer are provided with a first electrode layer and a second electrode layer respectively, and the first electrode layer and the second electrode layer have no any overlapping, and the first electrode layer and the second electrode layer are arranged outside an overlapping area of the first graphene conducting layer, the second graphene conducting layer and the two-dimensional stratiform atomic crystal semiconductor material layer at the same time. A passivation layer is respectively arranged above each layer. The optical detector based on the two-dimensional stratiform atomic crystal materials utilizes the two-dimensional stratiform atomic crystal materials, has the operating characteristics that detection spectrum range is wide, response speed is fast and cut-off frequency is high, and has the characteristics that spectral responsivity of a device is high and extraction of a photon-generated carrier is simple.
Owner:深圳激子科技有限公司

Structure design of tunnel junction in Perovskite/silicon heterojunction lamination solar battery

The invention provides a structure design of tunnel junction in Perovskite / silicon heterojunction lamination solar battery, which relates to the field of solar batteries. A tunneling composite layer TRL with narrow band gap and high doping concentration is added at the junction of the top and bottom part of a lamination battery, and the quite small energy level difference between the conduction band and the valence band can effectively strengthen the carrier recombination at the tunneling junction. The gradient band order at the bottom battery p layer and the tunneling junction can effectivelyenhance the cavity draw-off of the bottom battery and the tunneling junction, and thereby a large amount of charge accumulation among the tunneling junction interfaces can be prevented. After the adding of the TRL having high doping concentration, the defect density of states at the tunneling junction is increased. The electronic cavity assists tunneling through defects, and the probability of recombination and tunneling can be increased. With the adoption of the heterojunction, the spectrum response of the bottom battery can be effectively enhanced, and the opening and pressing loss can be reduced. The preparation method is simple and easy to carry out.
Owner:NANKAI UNIV +1

Fiber bragg grating sensing dynamic load identification method based on AR model and mahalanobis distance

The invention discloses a fiber bragg grating sensing dynamic load identification method based on AR model and mahalanobis distance. The method comprises the following steps: arranging the position of a distributed fiber bragg grating sensing network; monitoring and collecting impact response dynamic signals in real time; analyzing time domains of impact response signals and determining a response spectrum characteristic frequency capable of representing impact position information; extracting wavelet-packet-analysis-based spectrum response characteristic frequency and building an AR model parameter matrix; judging similarity between the impact position signals and response signals in a sample library of the AR model parameter matrix by using mahalanobis distance, primarily determining the area of the impact load to be monitored according to three impact positions with high similarity, then accurately identifying the impact load position by using a triangular center location method. Since a fiber bragg grating demodulating system is relatively low in demodulating frequency, the impact load cannot be located by using a time difference method; compared with the conventional time domain locating method, the method is simple and reliable.
Owner:NANJING UNIV OF AERONAUTICS & ASTRONAUTICS

Optical device spectral response measurement method and device

The present invention discloses an optical device spectral response measurement method, and belongs to the microwave photon measurement technology field. The method comprises the steps of utilizing a double-sideband phase modulation method and a double-sideband amplitude modulation method to modulate a microwave swept-frequency signal on an optical carrier separately to obtain a double-sideband phase modulation signal and a double-sideband amplitude modulation signal separately; taking the double-sideband phase modulation signal and the double-sideband amplitude modulation signal as the detection signals separately, enabling the detection signals to pass a to-be-measured optical device, then carrying out the beat frequency, transforming the spectral response information of the to-be-measured optical device into an electric domain, and then utilizing an amplitude phase extraction method to extract a transmission function of the to-be-measured optical device; adding and subtracting the transmission functions of the to-be-measured optical device under the two detection signals separately to obtain a broadband transmission function of the to-be-measured optical device. The present invention also discloses an optical device spectral response measurement. The measurement device of the present invention has a wider measurement range, and can work at any wavelength.
Owner:SUZHOU 614 INFORMATION TECH CO LTD

Structure and preparation method of surface electric field enhanced PIN photoelectric detector

The invention relates to a structure and a preparation method of a surface electric field enhanced PIN photoelectric detector, and belongs to photoelectric detectors. The PIN photoelectric detector is characterized in that a p-type heavily doped region 106 is selectively added in a single p-type lightly doped region 105 which originally covers the whole photosensitive surface, the p-type heavily doped region 106 is enabled to be connected with a p-type ohmic contact layer, thereby enabling a longitudinal electric field to be enhanced, improving the response speed of the detector, introducing a transverse electric field at the same time, increasing transport channels of photoproduction holes, reducing the transport resistance, reducing nonradiative recombination when the photoproduction holes are transported to an electrode in the p-type lightly doped region 105, improving the collection efficiency of the photoproduction holes, and then effectively improving the quantum efficiency. The structural design and the preparation process provided by the invention of the surface electric field enhanced PIN photoelectric detector solve a problem that a photoelectric detector with a traditional structure is low in collection efficiency for photoproduction carriers, and improve the spectral response of devices.
Owner:BEIJING UNIV OF TECH

Photoelectric integrating type color photometer based on combined LED light sources and measurement method thereof

The invention discloses a photoelectric integrating type color photometer based on combined LED light sources and a measurement method thereof. The photoelectric integrating type color photometer based on the combined LED light source comprises an integrating sphere, the LED light resources and a detector, wherein the LED light resources are arranged on the inner wall on the central horizontal plane of the integrating sphere in an equal-angle mode, the detector is positioned on the inner wall of the integrating sphere, and a 8-degree included angle is formed by the integrating sphere and a normal direction of the surface of a material. By means of the photoelectric integrating type color photometer based on the combined LED light source, the LED combined light sources serve as measurement light sources, and spectral response of the color photometer is changed by regulating spectral distribution of the LED combined light sources. Due to the fact that no optical filter is utilized in the design of the photoelectric integrating type color photometer, color data of a sample under test under multiple standard light sources can be measured through the photoelectric integrating type color photometer, indication errors of instrument measurement are reduced, and good test repeatability is ensured. Therefore, the photoelectric integrating type color photometer based on the combined LED light sources has good application and popularization prospects.
Owner:HANGZHOU CHNSPEC TECH
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