A method to suppress the low dose rate enhancement effect of bipolar transistors

A bipolar transistor and enhancement effect technology, which is applied in bipolar transistor testing, single semiconductor device testing, etc., can solve the problems of electronic device performance degradation, increase the recombination rate of transistors, and change carriers, so as to improve the radiation resistance , Inhibition of low dose rate damage, inhibition of damage enhancement effects

Active Publication Date: 2020-12-29
HARBIN INST OF TECH
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  • Application Information

AI Technical Summary

Problems solved by technology

Oxide trapping charges and interface states will change the recombination rate of carriers, especially for bipolar transistors, ionization defects mainly increase the recombination rate of the space charge region of the transistor, which in turn leads to degradation of the performance of electronic devices

Method used

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  • A method to suppress the low dose rate enhancement effect of bipolar transistors
  • A method to suppress the low dose rate enhancement effect of bipolar transistors
  • A method to suppress the low dose rate enhancement effect of bipolar transistors

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Experimental program
Comparison scheme
Effect test

specific Embodiment approach 1

[0018] Embodiment 1: The method for suppressing the low dose rate effect of bipolar transistors in this embodiment, such as Figure 5 shown, including:

[0019] Step 1, put the transistor into an airtight container, and evacuate or fill with protective gas; the transistor is a bipolar transistor.

[0020] Step 2: heating the transistor with an electric furnace and keeping it warm; the heating rate is less than or equal to 20°C / min, the temperature control accuracy is ±1°C, and the heating temperature is 150°C to 300°C.

[0021] Step 3, after the heat preservation is completed, the temperature of the transistor is lowered to 25°C.

[0022] The purpose of this embodiment is to find a method for suppressing the enhancement effect of low-dose-rate radiation damage on bipolar transistors, by heating the transistors before irradiation to reduce the impact of irradiation on the space charge region of the transistors. Therefore, the phenomenon of enhanced radiation damage of transis...

specific Embodiment approach 2

[0027] Specific embodiment 2: The difference between this embodiment and specific embodiment 1 is that after the completion of step 3, it also includes a step for detecting whether there is an enhancement effect of radiation damage, specifically including:

[0028] Step four, make 60 Coγ-rays are used as an irradiation source to perform an ionizing irradiation test on the transistor, changing the irradiation dose rate and recording the change in current gain of the transistor. If the change exceeds a preset threshold, it means that the transistor is damaged.

[0029] Other steps and parameters are the same as those in Embodiment 1.

specific Embodiment approach 3

[0030] Embodiment 3: This embodiment differs from Embodiment 1 or Embodiment 2 in that the method for suppressing the low dose rate effect of bipolar transistors also includes:

[0031] Step A, before the execution of step one, draw the graph of Δ(1 / β) versus irradiation dose for the high and low dose rate irradiation of the transistor without heating treatment; step B, after step four is executed , to plot the curves of Δ(1 / β) versus irradiation dose for high and low dose rate irradiation of transistors after heating treatment; where Δ(1 / β) represents the variation of the reciprocal of current gain.

[0032] The purpose of step A and step B is to observe the effect of irradiation on the electrical property damage of the transistor before and after heating through the drawn curve.

[0033] Methods of suppressing the low dose rate effects of bipolar transistors may also include:

[0034] Step C. Before step 1 is executed, draw the ΔI of high and low dose rate irradiation of th...

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Abstract

The invention relates to a bipolar transistor ELDRS (Enhanced Low Dose Rate Sensitivity) suppressing method and belongs to the technical field of space environment effect, nuclear science and application. The method provided by the invention is proposed aiming at a defect of lack of a bipolar transistor ELDRS suppressing means in the prior art. The method includes putting a transistor into a sealed container, vacuumizing the container or filling with protective gas, wherein the transistor is a bipolar transistor; heating the transistor with an electric furnace and performing thermal insulation; cooling the transistor to a room temperature after thermal insulation ends. The method is suitable for anti-radiation treatment on components and parts in electric systems in a spacecraft cabin.

Description

technical field [0001] The invention relates to a method for suppressing the low dose rate enhancement effect of a bipolar transistor, belonging to the field of space environment effect, nuclear science and application technology. Background technique [0002] As one of the basic components commonly used in circuit design, bipolar transistors have excellent matching characteristics, linearity, low noise and good current drive capability. In hybrid integrated circuits or analog circuits, especially in space on rail It has a wide range of applications in various spacecraft. In the space radiation environment, the spacecraft will interact with a variety of high-energy charged particles (protons, electrons, and heavy ions), which will affect the structural and functional materials in the spacecraft and the performance of electronic devices, causing the spacecraft to malfunction, or even invalidated. [0003] The radiation dose rate in the space radiation environment is extreme...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/26
CPCG01R31/2608
Inventor 李兴冀杨剑群刘超铭赵金宇
Owner HARBIN INST OF TECH
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