Patents
Literature
Patsnap Copilot is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Patsnap Copilot

649 results about "Dose rate" patented technology

Dose Rate The dose rate is a measure of how fast a radiation dose is being received. Knowing the dose rate, allows the dose to be calculated for a period of time. Fore example, if the dose rate is found to be 0.8rem/hour, then a person working in this field for two hours would receive a 1.6rem dose.

Automated medication dispenser with remote patient monitoring system

A medication dispensing unit comprising a carousel defining a plurality of compartments, each of the compartments adapted to store a dose of medication is disclosed. The dispensing unit also comprises a housing that has a surface adapted to receive the carousel. The housing defines a receptacle and an access aperture that communicates between the receptacle and the surface that is adapted to receive the carousel. One of the compartments is positioned to communicate with the receptacle through the access aperture. The unit also comprises a dosing drawer that is positioned within the receptacle and communicates with the access aperture to receive a dose of medication from the compartment through the access aperture. The dosing drawer includes a normally closed trap door that, when opened, allows a dose of medication in the drawer to drop out of the dosing drawer. The dispensing unit comprises a recovery drawer that is positioned within the receptacle and communicates with the dosing drawer through the trap door, and receives a dose of medication from the dosing drawer when the trap door is opened. The medication dispensing unit also comprises means for rotating the carousel and a microcontroller that defines dosing period, determines that the patient has accessed the dosing drawer within a dosing period, and locks the recovery drawer.
Owner:RAPID PATIENT MONITORING

Lethal and sublethal damage repair inhibiting image guided simultaneous all field divergent and pencil beam photon and electron radiation therapy and radiosurgery

A medical accelerator system is provided for simultaneous radiation therapy to all treatment fields. It provides the single dose effect of radiation on cell survival. It eliminates the inter-field interrupted, subfractionated fractionated radiation therapy. Single or four beams S-band, C-band or X-band accelerators are connected to treatment heads through connecting beam lines. It is placed in a radiation shielding vault which minimizes the leakage and scattered radiation and the size and weight of the treatment head. In one version, treatment heads are arranged circularly and connected with the beam line. In another version, a pair of treatment heads is mounted to each ends of narrow gantries and multiple such treatment heads mounted gantries are assembled together. Electron beam is steered to all the treatment heads simultaneously to treat all the fields simultaneously. Radiating beam's intensity in a treatment field is modulated with combined divergent and pencil beam, selective beam's energy, dose rate and weight and not with MLC and similar devices. Since all the treatment fields are treated simultaneously the dose rate at the tumor site is the sum of each of the converging beam's dose rate at depth. It represents the biological dose rate. The dose rate at d-max for a given field is the individual machine dose rate. Its treatment options includes divergent or pencil beam modes. It enables to treat a tumor with lesser radiation toxicities to normal tissue and higher tumor cure and control.
Owner:SAHADEVAN VELAYUDHAN

Ion implantation ion source, system and method

InactiveUS20070278417A1Maximizing flow of electronHigh extracted currentMaterial analysis by optical meansIon beam tubesDevice materialDose rate
Various aspects of the invention provide improved approaches and methods for efficiently: Vaporizing decaborane and other heat-sensitive materials via a novel vaporizer and vapor delivery system; Delivering a controlled, low-pressure drop flow of vapors, e.g. decaborane, into the ion source;
    • Ionizing the decaborane into a large fraction of B10Hx+; Preventing thermal dissociation of decaborane;
    • Limiting charge-exchange and low energy electron-induced fragmentation of B10Hx+; Operating the ion source without an arc plasma, which can improve the emittance properties and the purity of the beam; Operating the ion source without use of a strong applied magnetic field, which can improve the emittance properties of the beam; Using a novel approach to produce electron impact ionizations without the use of an arc discharge, by incorporation of an externally generated, broad directional electron beam which is aligned to pass through the ionization chamber to a thermally isolated beam dump; Providing production-worthy dosage rates of boron dopant at the wafer; Providing a hardware design that enables use also with other dopants, especially using novel hydride, dimer-containing, and indium- or antimony-containing temperature-sensitive starting materials, to further enhance the economics of use and production worthiness of the novel source design and in many cases, reducing the presence of contaminants; Matching the ion optics requirements of the installed base of ion implanters in the field; Eliminating the ion source as a source of transition metals contamination, by using an external and preferably remote cathode and providing an ionization chamber and extraction aperture fabricated of non-contaminating material, e.g. graphite, silicon carbide or aluminum; Enabling retrofit of the new ion source into the ion source design space of existing Bernas source-based ion implanters and the like or otherwise enabling compatibility with other ion source designs; Using a control system in retrofit installations that enables retention of the installed operator interface and control techniques with which operators are already familiar; Enabling convenient handling and replenishment of the solid within the vaporizer without substantial down-time of the implanter; Providing internal adjustment and control techniques that enable, with a single design, matching the dimensions and intensity of the zone in which ionization occurs to the beam line of the implanter and the requirement of the process at hand; Providing novel approaches, starting materials and conditions of operation that enable the making of future generations of semiconductor devices and especially CMOS source/drains and extensions, and doping of silicon gates.
Owner:SEMEQUIP

Particle beam irradiation apparatus and control method of the particle beam irradiation apparatus

Provided is a particle beam irradiation apparatus capable of highly reliable measurement of a dose of each beam and capable of highly sensitive measurement of a leakage dose caused by momentary beam emission. The particle beam irradiation apparatus according to the present invention includes: an emission control portion that controls emission and termination of a particle beam; a control portion that sequentially changes an irradiation position of the particle beam relative to an affected area; first and second dosimeters that measure dose rates of the particle beam directed to the affected area; and an abnormality determination portion that accumulates the dose rates output from the first and second dosimeters for each of predetermined determination periods to calculate first and second sectional dose measurement values and that performs second abnormality determination of determining that there is an abnormality and outputs an interlock signal for terminating the emission of the particle beam in at least one of a case in which the first sectional dose measurement value exceeds a predetermined first reference range and a case in which the second sectional dose measurement value exceeds a predetermined second reference range.
Owner:NAT INST FOR QUANTUM & RADIOLOGICAL SCI & TECH +1

Icon implantation ion source, system and method

Various aspects of the invention provide improved approaches and methods for efficiently: Vaporizing decaborane and other heat-sensitive materials via a novel vaporizer and vapor delivery system; Delivering a controlled, low-pressure drop flow of vapors, e.g. decaborane, into the ion source; Ionizing the decaborane into a large fraction of B10Hx+; Preventing thermal dissociation of decaborane; Limiting charge-exchange and low energy electron-induced fragmentation of B10Hx+; Operating the ion source without an arc plasma, which can improve the emittance properties and the purity of the beam; Operating the ion source without use of a strong applied magnetic field, which can improve the emittance properties of the beam; Using a novel approach to produce electron impact ionizations without the use of an arc discharge, by incorporation of an externally generated, broad directional electron beam which is aligned to pass through the ionization chamber to a thermally isolated beam dump; Providing production-worthy dosage rates of boron dopant at the wafer; Providing a hardware design that enables use also with other dopants, especially using novel hydride, dimer-containing, and indium- or antimony-containing temperature-sensitive starting materials, to further enhance the economics of use and production worthiness of the novel source design and in many cases, reducing the presence of contaminants; Matching the ion optics requirements of the installed base of ion implanters in the field; Eliminating the ion source as a source of transition metals contamination, by using an external and preferably remote cathode and providing an ionization chamber and extraction aperture fabricated of non-contaminating material, e.g. graphite, silicon carbide or aluminum; Enabling retrofit of the new ion source into the ion source design space of existing Bernas source-based ion implanters and the like or otherwise enabling compatibility with other ion source designs; Using a control system in retrofit installations that enables retention of the installed operator interface and control techniques with which operators are already familiar; Enabling convenient handling and replenishment of the solid within the vaporizer without substantial down-time of the implanter; Providing internal adjustment and control techniques that enable, with a single design, matching the dimensions and intensity of the zone in which ionization occurs to the beam line of the implanter and the requirement of the process at hand; Providing novel approaches, starting materials and conditions of operation that enable the making of future generations of semiconductor devices and especially CMOS source / drains and extensions, and doping of silicon gates.
Owner:SEMEQUIP

Radioactive detection system and radioactive detection method

Embodiments of the invention disclose a radioactive detection system and a radioactive detection method, and relate to the technical field of radiation monitoring. By adopting the system and the method, personnel do not need to approach or enter a radiation area or suspected radiation area with an instrument in hand for detection just like that in a traditional measurement method, and the risk is reduced. The system is composed of an unmanned rotor aircraft and a ground control terminal. The unmanned rotor aircraft comprises an unmanned rotor flying platform, and a radiation measuring platform borne on the unmanned rotor flying platform. The radiation measuring platform comprises a storage module used to store all measurement data and detection results, an energy spectrum detection module used to acquire energy spectrum information in a current environment, a multi-channel analysis module used to preliminarily process the energy spectrum information, a data processing module used to integrate and package location information, preliminary processing result data and dose rate monitoring information, and a wireless radio-frequency transmission module used to send a data packet to the ground control terminal. The radioactive detection system and the radioactive detection method of the invention are suitable for remotely detecting the radiation dose rate.
Owner:NANJING UNIV OF AERONAUTICS & ASTRONAUTICS

Natural polysaccharide/nano-TiO2 composite light-sensitive antimicrobial hydrogel dressing and radiation synthesis method thereof

The invention provides a natural polysaccharide/nano-TiO2 composite light-sensitive antimicrobial hydrogel dressing which is composed of a backing layer, a hydrogel dressing layer and a strippable layer. A synthesis method of the natural polysaccharide/nano-TiO2 composite light-sensitive antimicrobial hydrogel dressing comprises performing radiation crosslinking on raw materials, namely 10-40% of natural polysaccharide, 0.1-10% of nano-TiO2, 0.1%-5% of radiation sensitizer, 0.1%-3% of pH regulator, 0.1%-3% of surfactant and 60%-95% of water, by use of an electron beam or gamma ray by a radiation dose of 10-150kGy and at a dose rate of 10-80kGy/pass. The natural polysaccharide/nano-TiO2 composite light-sensitive antimicrobial hydrogel dressing is sheared, bagged and sterilized by radiation, and then stored for a long time. The natural polysaccharide/nano-TiO2 composite light-sensitive antimicrobial hydrogel dressing has the advantages that the maximization and optimization of the properties of the composite hydrogel, light-sensitive and antimicrobial properties are united organically, and the multiple-element composite synergic antimicrobial effect of the nano-TiO2-natural polysaccharide hydrogel is also realized; meanwhile, the composite hydrogel dressing has the characteristics of air permeability, no bonding with tissues, good flexibility and the like, and thus is suitable for protecting and treating various wounds.
Owner:HUBEI UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products