32 results about "Thermal dissociation" patented technology

The present invention provides a method for carrying out high temperature thermal dissociation reactions requiring rapid-heating and short residence times using solar energy. In particular, the present invention provides a method for carrying out high temperature thermal reactions such as dissociation of hydrocarbon containing gases and hydrogen sulfide to produce hydrogen and dry reforming of hydrocarbon containing gases with carbon dioxide. In the methods of the invention where hydrocarbon containing gases are dissociated, fine carbon black particles are also produced. The present invention also provides solar-thermal reactors and solar-thermal reactor systems.

A non-volatile memory cell is described. The non-volatile memory cell comprises a substrate, a charge-trapping layer, a gate and a source / drain. The charge-trapping layer comprises an insulating layer and metal nano-particles contained therein, wherein the metal nano-particles are formed with thermal dissociation of an oxide of the same metal. The gate is disposed on the charge-trapping layer, and the source / drain is located in the substrate beside the gate.

The invention discloses an F, Mn co-doping deposition nano-SnO2 transparent heat insulating thin film, wherein the F, Mn element co-doping effect is utilized to increase the number charge carriers in the thin film material, thus increasing the index of thin film reflection to infrared rays. The invention can prevent the excess doping of one single element, it can be applied to chemical CVD or supersonic spraying thermal dissociation deposition.

Various aspects of the invention provide improved approaches and methods for efficiently: Vaporizing decaborane and other heat-sensitive materials via a novel vaporizer and vapor delivery system; Delivering a controlled, low-pressure drop flow of vapors, e.g. decaborane, into the ion source; Ionizing the decaborane into a large fraction of B10Hx+; Preventing thermal dissociation of decaborane; Limiting charge-exchange and low energy electron-induced fragmentation of B10Hx+; Operating the ion source without an arc plasma, which can improve the emittance properties and the purity of the beam; Operating the ion source without use of a strong applied magnetic field, which can improve the emittance properties of the beam; Using, a novel approach to produce electron impact ionizations without the use of an arc discharge, by incorporation of an externally generated, broad directional electron beam which is aligned to pass through the ionization chamber to a thermally isolated beam dump;. Providing production-worthy dosage rates of boron dopant at the wafer; Providing a hardware design that enables use also with other dopants, especially using novel hydride, dimer-containing, and indium- or antimony-containing temperature-sensitive starting materials, to further enhance the economics of use and production worthiness of the novel source design and in many cases, reducing the presence of contaminants; Matching the ion optics requirements of the installed base of ion implanters in the field; Eliminating the ion source as a source of transition metals contamination, by using an external and preferably remote cathode and providing an ionization chamber and extraction aperture fabricated of non-contaminating material, e.g. graphite, silicon carbide or aluminum; Enabling retrofit of the new ion source into the ion source design space of existing Bernas source-based ion implanters and the like or otherwise enabling compatibility with other ion source designs; Using a control system in retrofit installations that enables retention of the installed operator interface and control techniques with which operators are already familiar; Enabling convenient handling and replenishment of the solid within the vaporizer without substantial down-time of the implanter; Providing internal adjustment and control techniques that enable, with a single design, matching the dimensions and intensity of the zone in which ionization occurs to the beam line of the implanter and the requirement of the process at hand; Providing novel approaches, starting materials and conditions of operation that enable the making of future generations of semiconductor devices and especially CMOS source / drains and extensions, and doping of silicon gates.

A process for large-scale production of CdTe / CdS thin film solar cell the films of the solar cells being deposited as a sequence on a transparent substrate, which comprises the steps of: depositing a film of a transparent conductive oxide (TCO) on the substrate; depositing a film of CdS on the TCO film; treating the CdTe film with Chlorine-containing inert gas; and depositing a back-contact film on the treated CdTe film. The Chlorine-containing inert gas is a Chlorofluorocarbon or a Hydrochlorofluorocarbon product and the treatment is carried out in a vacuum chamber at an operating temperature of 380-420° C. The Chlorine released as a result of the thermal dissociation of the product reacts with solid CdTe present on the cell surface to produce TeCl2 and CdCl2 vapors. Any residual CdCl2 is removed from the cell surface by applying a vacuum to the vacuum chamber while keeping the temperature at the operating value.

A sensitive, compact detector measures total reactive nitrogen (NOy), as well as NO2, NO, and O3. In all channels, NO2 is directly detected by laser diode based cavity ring-down spectroscopy (CRDS) at 405 nm. Ambient O3 is converted to NO2 in excess NO for the O3 measurement channel. Likewise, ambient NO is converted to NO2 in excess O3. Ambient NOy is thermally dissociated at 700C to form NO2 or NO in a heated quartz inlet. Any NO present in ambient air or formed from thermal dissociation of other reactive nitrogen compounds is converted to NO2 in excess O3 after the thermal converter. The precision and accuracy of this instrument make it a versatile alternative to standard chemiluminescence-based NOy instruments.

The process for melting oxidic slags and combustion residues having a minimum content of metallized portions such as, e.g., iron and / or carbon carriers, of 3% by weight is carried out in a shaft furnace directly heated by means of fossil fuels via burners. The molten slag bath is transferred into a hearth type furnace immediately adjoining the shaft furnace and in which metals such as, for instance, copper are separated by sedimentation under thermal dissociation and discharged separately via a bottom outlet. The completely oxidized slag reaches a consecutively arranged slag treating reactor via a separate discharge.

The invention relates to the solid waste thermal decomposition treatment, comprising a igniting the flammable matter, adding solid waste, forcing to add magnetic air to maintain the stable thermal decomposition reaction, emitting of the nonflammable slag, comprising a furnace, treatment chamber, emission chamber with air inlet connected to the air inlet channel, treatment chamber with air exhaust connected with the chimney, air inlet channel having magnetizer, whose inside having strong magnets, the other end of the air inlet channel connected to the air outlet, with air conduit between the wind outlet and the chimney. It improves the thermal decomposition efficiency in the temperature around 600deg.C. It is an environment protective technology without the use of any energy.

The invention relates to a process for preparing sub-micron aluminum oxide through improved salting out method comprising the steps of, subjecting the collyrium type clay to hydrochloric acid extraction, extraction, salting-out, thermal dissociation incineration and super fine integration, wherein the extracting agent employs tributyl phosphate, the thinning agent employs petroleum ether or sulphonated kerosene.

The present invention relates to a process for in situ growth of carbonaceous composite coating of diamond like carbon (DLC) and graphite on silicon carbide (SiC) grains by carrying out thermal dissociation of SiC by an indirect arc plasma heating and the said process comprising the steps of: (i) providing SiC grains in a graphite crucible; (ii) passing inert gas in the arc zone situated below the graphite crucible; (iii) passing a inert gas inside the graphite crucible; (iv) heating the graphite crucible by arc plasma for a period in the range of 15 to 30 minutes; (v) continuing the inert gas flow in arc zone and in graphite crucible for 50 to 70 minutes; (vi) cooling the reactor to obtain a carbonaceous composite coating having diamond like carbon (DLC) and graphite on silicon carbide (SiC) grains.

The invention discloses a nano film forming machine for preparing nano functional film, which comprises a vacuum tank body and a generator, the vacuum tank body comprising a cabin and a top cover which is equipped with the cabin, the generator being equipped with the inner of the cabin and being fixed by a supporting flange which is equipped with the cabin, the rotation shaft of the generator being provided with a base-tray, the top cover being equipped with a liquid inlet which locates above the base-tray, the vacuum tank body being equipped with a vacuum adapter for evacuation, in the vacuum tank body being provided with a heat source for thermal dissociation and a light source for photo dissociation, and the heat source and light source equipped upper than base-tray; the invention has a merit of: taking film formation, thermal dissociation or photo dissociation and phase-change in high temperature in a whole body, and guaranteeing the film quality.

A contaminated Group III metal hydrocarbon is purified by providing an adduct of Group III metal hydrocarbon with a Lewis base in a solvent having a boiling point which is up to 200° C., but at least 30° C. higher than the boiling point of the Group III metal hydrocarbon, separating the solvent from the adduct, and heating the adduct for thermal dissociation, thereby releasing the Group III metal hydrocarbon in high purity form.

The invention relates to a thermal dissociation reactor, a method for purifying coarse beryllium powder into ingots and a method for preparing ultra-high pure metallic beryllium. The thermal dissociation reactor comprises an iodine containing furnace, a low-temperature reactor and a high-temperature reactor, wherein the iodine containing furnace communicates with the low-temperature reactor, and the low-temperature reactor communicates with the high-temperature reactor. The method for purifying the coarse beryllium powder into the ingots through the thermal dissociation reactor comprises the following steps that the coarse beryllium powder and iodine are reacted in the thermal dissociation reactor, and the mass ratio of the coarse beryllium powder to the iodine is 5:1; beryllium iodide vapor is generated; the beryllium iodide vapor is thermally dissociated and decomposed into metallic beryllium and iodine vapor; collection is carried out to obtain pure beryllium powder; and the pure beryllium powder is smelted into the beryllium ingots in an electron beam smelting furnace. The thermal dissociation reactor is reasonable in structure, simple to assemble and convenient to use; and according to the method for purifying the coarse beryllium powder into the ingots through the thermal dissociation reactor, the operation is simple, the medicament is saved, the energy is saved, the environment is protected, the cost is low, and the purity of the beryllium is extremely high.

A compound having thioacetal skeleton, a precursor thereof, a cured product thereof, and a composition for their production are provided for the thermally dissociatable material based on the inventors' finding that a thioacetal group is thermally dissociatable. The use of the thermally dissociatable material of the invention enables softening or liquefaction at any desired timing through thermal dissociation at a temperature below the thermal decomposition temperature of the cured product. It is thus possible to disassemble the structure to which the thermally dissociatable material had been attached in a short time. The thermally dissociatable material is useful as a highly disposable plastic material and is adapted for use as a sealant, coating composition or adhesive. Such material may be used, for example, as a curing agent for urethane curable composition or epoxy curable composition, or as a self-curable material.

To provide a compound which has a higher vulcanization efficiency and superior heat aging resistance compared to conventional compounding agents for rubber compositions and which is environmentally friendly.An amine salt compound of a carboxylic acid containing a thermal dissociation portion having the Formula (I):wherein R represents an organic group selected from a C1 to C20 alkyl group, a C3 to C10 cycloalkyl group, a C6 to C20 aryl group and a C7 to C30 alkaryl group, R1, R2 and R3 independently represent a hydrogen atom or a C1 to C20 organic group which may have a heteroatom and / or a substituent group and X represents a C2 to C20 organic group which may have a heteroatom and / or a substituent group and a compounding agent for rubber vulcanization and a rubber composition containing the same.

The invention relates to a high-mach-number low-temperature array nozzle used for HF / DF chemical laser. The array nozzle comprises more than two nozzle assembling units which are arranged in parallel; a nozzle unit is formed between the two nozzle assembling units; the nozzle unit is a typical two-dimensional slit Laval nozzle; a row of hydrogen nozzle holes are formed in the wall surface of each of the nozzle assembling units on the two sides of the tail end of an outlet expansion section of the corresponding nozzle unit separately; a row of main helium nozzle holes are formed in the wall surface of each of the nozzle assembling units on the two sides of an outlet expansion section between the hydrogen nozzle holes and a throat-shaped channel separately; and a row of combustor helium nozzle holes are formed in the wall surface of each of the nozzle assembling units on the two sides of the inlet end of the corresponding nozzle unit separately. By adopting a high-mach-number low-temperature array nozzle design concept, the efficient fluorine atom freezing efficiency of the high-mach-number low-temperature nozzle is maintained; and by introducing a Russia novel nozzle combustor helium adding strategy, the thermal dissociation efficiency of the combustor is greatly improved.

The present invention relates to methods by which the thermal dissociation of Michael adducts present in a stream of crude acrylic acid, called “crude ester grade”, and the esterification reaction of acrylic acid present in the stream of crude acrylic acid, or generated in situ by thermal dissociation, with a light alcohol, are carried out simultaneously.