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A process for large-scale production of CdTe/CdS thin film solar cells, without the use of CdCl2

A solar cell, large-scale technology, applied in the field of solar cells, which can solve the problems of low evaporation temperature, uneven deposition, danger, etc.

Inactive Publication Date: 2008-01-30
SOLAR SYST & EQUIP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The above steps greatly affect the production cost
[0014] As another disadvantage, since CdCl 2 Usually available as a very fine powder, it cannot be evaporated in a straight line on an industrial production line, because the finest particles in the vapor will cause local uneven deposition
For this, the CdCl must be sintered in the form of an ingot before evaporation 2 powder, which is a very expensive step given the safety precautions considered when performing
[0015] Furthermore, usually, CdCl 2 Handling and storage has several disadvantages
CdCl 2 Has a relatively low evaporation temperature (approximately 500°C in air) and is dangerous in fire situations due to the very harmful release of Cd when stored in large quantities as required in large-scale production plants

Method used

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  • A process for large-scale production of CdTe/CdS thin film solar cells, without the use of CdCl2
  • A process for large-scale production of CdTe/CdS thin film solar cells, without the use of CdCl2
  • A process for large-scale production of CdTe/CdS thin film solar cells, without the use of CdCl2

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Embodiment Construction

[0029] Referring to the figure, a CdTe / CdS solar cell produced by the method according to the present invention comprises five layers sequentially deposited on a transparent base layer or substrate, consisting of a 300-500 nm thick transparent conductive oxide (TCO) layer, on top of the TCO layer Deposited 80-200 nm thick CdS layer, 4-12 μm thick CdTe layer on top of the CdS layer and at least 100 nm thick SB 2 Te 3 layer and a 100nm thick Mo layer to form the rear contact layer. In particular, the transparent base substrate is composed of soda-lime glass, and the transparent conductive oxide doped with fluorine (In 2 o 3 :F).

[0030] The TCO layer consists of fluorine-doped In during growth 2 o 3 composition. Different from ITO, In 2 o 3 The target does not form any needles. By introducing a gaseous fluoroalkyl compound, such as CHF, into the sputtering chamber 3 A small amount of fluorine and a mixture with an inert gas, such as Ar+H 2 A small amount of H in the ...

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Abstract

A process for the large-scale production of CdTe / CdS thin film solar cells, said films being deposited as a sequence on a transparent substrate, comprising the steps of : depositing a film of a transparent conductive oxide (TCO) on said substrate; depositing a film of CdS on said TCO film; depositing a film of CdTe on said CdS film; treating said CdTe film with a Chlorine-containing inert gas; depositing a back-contact film on said treated CdTe film. The Chlorine -containing inert gas is a Chlorof luorocarbon or a Hydrochlorof luorocarbon product and the treatment is carried out in a vacuum chamber at an operating temperature of 380-4200C. The Chlorine released as a result of the thermal dissociation of the product reacts with solid CdTe present on the cell surface to produce TeCl2 and CdCl2 vapors. Any residual CdCl2 is removed from the cell surface by applying vacuum to the vacuum chamber while keeping the temperature at the operating value.

Description

technical field [0001] The present invention relates to the field of solar cell technology, and more particularly, to methods for the mass production of CdTe / CdS thin film solar cells. More specifically, the present invention relates to the improvement of the processes involved in the activation of CdTe / CdS thin films by chlorine-containing gases. Even though in this specification reference is made to "CdTe / CdS thin film" solar cells for simplicity, it will be understood that this term is included in the formula Zn x ,Cd 1-x S / CdTe y S 1-y All salt mixtures contained in , where 0≤x≤0.2 e 0.95≤y≤1. Background technique [0002] It is well known that the typical structure of a CdTe / CdS solar cell has a multi-layered film sequence, including a transparent glass substrate carrying a transparent conductive oxide (TCO) film, a Cds film representing an n-conductor, a CdTe film representing a p-conductor, and a metal rear. contacts. A solar cell with a layer arrangement and a ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L31/1836Y02E10/50
Inventor 尼克拉·罗密欧艾里希欧·伯西欧艾里森德罗·罗密欧
Owner SOLAR SYST & EQUIP
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