Ion implantation ion source, system and method
a technology of ion implantation and ion source, which is applied in the direction of ion beam tubes, electrical equipment, discharge tubes, etc., can solve the problems of preventing effective implanting of dopant species, inefficient ion implantation implanters, and low energy transport efficiency of ion implanters, so as to maximize the electron flow through the ionization chamber, reduce the effect of ionization chamber ionization and ionization chamber size and size, and reduce the effect of i
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[0172]FIG. 3 shows in schematic an embodiment of ion source 1. The vaporizer 2 is attached to the vaporizer valve 3 through an annular thermally conductive gasket 4. The vaporizer valve 3 is likewise attached to the mounting flange 7, and the mounting flange 7 is attached to ionization chamber body 5 by further annular thermally conductive gaskets 6 and 6A. This ensures good thermal conduction between the vaporizer, vaporizer valve, and ionization chamber body 5 through intimate contact via thermally conductive elements. The mounting flange 7 attached to the ionization chamber 5, e.g., allows mounting of the ion source 1 to the vacuum housing of an ion implanter, (see FIG. 8) and contains electrical feedthroughs (not shown) to power the ion source, and water-cooling feedthroughs 8, 9 for cooling. In this preferred embodiment, water feedthroughs 8, 9 circulate water through the cooled mounting frame 10 to cool the mounting frame 10 which in turn cools the attached components, the ele...
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