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2470results about How to "Increase the cross-sectional area" patented technology

Semiconductor device and method of manufacturing thereof

The invention relates to a semiconductor device comprising: a substrate (1), the substrate (1) comprising a body (5), the body (5) having a surface, the substrate (1) being provided with an insulating layer (10) on the surface of the body (1);—a conductor (25) with insulating sidewall spacers (22) located in the insulating layer (10), the conductor (25) having a current-flow direction during operation, the conductor (25) having a first width, the insulating sidewall spacers (22) each having a second width being smaller than the first width of the conductor (25), the first width and the second width being measured in a direction perpendicular to the current-flow direction of the conductor (25) and parallel to said surface, the conductor (25) having a first top surface extending parallel to said surface, the insulating sidewall spacers (22) having a second top surface, and airgaps (30) located in the insulating layer (10) adjacent to the insulating sidewall spacers (22), characterized in that the first top surface coincides with the second top surface, and in that the airgaps (30) extend from the surface of the body (5) to said first and second top surface. The invention further relates to a method of manufacturing such a semiconductor device. The semiconductor device according to the invention enables a lower resistance of the conductor while still providing a tolerance for unlanded vias.
Owner:NXP BV

Artificial skin and elastic strain sensor

An elastic strain sensor can be incorporated into an artificial skin that can sense flexing by the underlying support structure of the skin to detect and track motion of the support structure. The unidirectional elastic strain sensor can be formed by filling two or more channels in an elastic substrate material with a conductive liquid. At the ends of the channels, a loop port connects the channels to form a serpentine channel. The channels extend along the direction of strain and the loop portions have sufficiently large cross-sectional area in the direction transverse to the direction of strain that the sensor is unidirectional. The resistance is measured at the ends of the serpentine channel and can be used to determine the strain on the sensor. Additional channels can be added to increase the sensitivity of the sensor. The sensors can be stacked on top of each other to increase the sensitivity of the sensor. In other embodiments, two sensors oriented in different directions can be stacked on top of each other and bonded together to form a bidirectional sensor. A third sensor formed by in the shape of a spiral or concentric rings can be stacked on top and used to sense contact or pressure, forming a three dimensional sensor. The three dimensional sensor can be incorporated into an artificial skin to provide advanced sensing.
Owner:PRESIDENT & FELLOWS OF HARVARD COLLEGE

Non-volatile memory cells utilizing substrate trenches

Several embodiments of flash EEPROM split-channel cell arrays are described that position the channels of cell select transistors along sidewalls of trenches in the substrate, thereby reducing the cell area. Select transistor gates are formed as part of the word lines and extend downward into the trenches with capacitive coupling between the trench sidewall channel portion and the select gate. In one embodiment, trenches are formed between every other floating gate along a row, the two trench sidewalls providing the select transistor channels for adjacent cells, and a common source/drain diffusion is positioned at the bottom of the trench. A third gate provides either erase or steering capabilities. In another embodiment, trenches are formed between every floating gate along a row, a source/drain diffusion extending along the bottom of the trench and upwards along one side with the opposite side of the trench being the select transistor channel for a cell. In another embodiment, select transistor gates of dual floating gate memory cells are extended into trenches or recesses in the substrate in order to lengthen the select transistor channel as the surface dimensions of the cell are being decreased. Techniques for manufacturing such flash EEPROM split-channel cell arrays are also included.
Owner:SANDISK TECH LLC

Optical fiber laser, and components for an optical fiber laser, having reduced susceptibility to catastrophic failure under high power operation

Optical fiber lasers and components for optical fiber laser. An optical fiber laser can comprise a fiber laser cavity having a wavelength of operation at which the cavity provides output light, the cavity including optical fiber that guides light having the wavelength of operation, the fiber having first and second lengths, the first length having a core having a V-number at the wavelength of operation and a numerical aperture, the second length having a core that is multimode at the wavelength of operation and that has a V-number that is greater than the V-number of the core of the first length optical fiber at the wavelength of operation and a numerical aperture that is less than the numerical aperture of the core of the first length of optical fiber. At least one of the lengths comprises an active material that can provide light having the wavelength of operation via stimulated emission responsive to the optical fiber receiving pump light. Components include a mode field adapter and optical fiber interconnection apparatus, which can be used to couple the first and second lengths of optical fiber, or can couple the fiber laser to an optical fiber power amplifier, which can be a multimode or single mode amplifier.
Owner:NUFERN

Large diameter optical waveguide, grating, and laser

A large diameter optical waveguide, grating, and laser includes a waveguide 10 having at least one core 12 surrounded by a cladding 14, the core propagating light in substantially a few transverse spatial modes; and having an outer waveguide dimension d2 of said waveguide being greater than about 0.3 mm. At least one Bragg grating 16 may be impressed in the waveguide 10. The waveguide 10 may be axially compressed which causes the length L of the waveguide 10 to decrease without buckling. The waveguide 10 may be used for any application where a waveguide needs to be compression tuned, e.g., compression-tuned fiber gratings and lasers or other applications. Also, the waveguide 10 exhibits lower mode coupling from the core 12 to the cladding 14 and allows for higher optical power to be used when writing gratings 16 without damaging the waveguide 10. The shape of the waveguide 10 may have other geometries (e.g., a “dogbone” shape) and/or more than one grating or pair of gratings may be used and more than one core may be used. The core and/or cladding 12,14 may be doped with a rare-earth dopant and/or may be photosensitive. At least a portion of the core 12 may be doped between a pair of gratings 50,52 to form a fiber laser or the grating 16 or may be constructed as a tunable DFB fiber laser or an interactive fiber laser within the waveguide 10. The waveguide may resemble a short “block” or a longer “cane” type, depending on the application and dimensions used.
Owner:WEATHERFORD TECH HLDG LLC
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