The invention relates to a gallium arsenide solar cell and a preparation method thereof, belonging to the technical field of solar cells. In the gallium arsenide solar cell provided by the present invention, it includes a lower electrode, a substrate layer, a gallium arsenide epitaxial layer, an upper electrode, and an anti-reflection film in order from the backlight surface to the light-receiving surface of the cell; wherein, the anti-reflection film is a double layer structure, including TiO 2 @AZO is the inner anti-reflection layer and SiO made of raw materials 2 The outer anti-reflection layer is made of raw materials, the inner anti-reflection layer is arranged next to the upper electrode grid line, and the outer anti-reflection layer is arranged away from the upper electrode grid line; the TiO 2 @AZO for TiO 2 As the inner core, AZO is the core-shell structure of the outer shell. The battery uses TiO 2 @AZO is used as a raw material to be deposited on the surface of the upper electrode grid line or the surface of the epitaxial layer by vacuum evaporation to form an inner anti-reflection layer, which improves the conductive effect of the upper electrode and the transmittance of sunlight.