40results about How to "Precise control of film thickness" patented technology

A sputtering apparatus is disclosed which enables highly accurate monitor control of a film thickness and allows enhanced flexibility in design. The apparatus includes a substrate placement area in which a substrate is placed, a particle emission area in which a target is placed and sputter particles from the target are emitted, and a sensor placement area in which a sensor is placed for measuring a thickness of a film formed on the substrate. The substrate placement area and the sensor placement area are provided in a positional relationship having symmetry with respect to a center line of the particle emission area.

The present invention discloses a Pt Ni Al bonding layer doped with binary trace active elements and capable of being completely oxidation resisting at 1200 DEG C and a preparation method thereof and belongs to the field of novel thermal barrier coatings and the preparation technologies. According to the invention, firstly, a Pt layer with the thickness of 5-10 microns is prepared on a nickel base monocrystal high temperature alloy matrix through the plating or the electron beam physical vapor deposition method, and then a NiAlHfZr coating with the thickness of 20-60 microns is deposited on the Pt layer through the electron beam physical vapor deposition method. The Pt layer reduces the interfacial holes and effectively improves the adhesion of an oxidation film; binary doping of Hf, Zr enables the NiAl coating surface to be smoother and denser and enables the oxidation film generated during the oxidation process on the coating surface to be straighter, especially with little oxidation increase, and greatly improves the oxidation resistance of the coating. The Pt Ni Al bonding layer is completely oxidation resisting at 1200 DEG C. The service life of the coating is prolonged to certain degree through doping of binary elements namely Hf and Zr and Pt modification.

The invention provides a method for making an optical film of scattering oxidants by gold and silver nanometer particles, belonged to the art of metal nanometer particle and inorganic non-metallic material composite technique. Au, Ag and oxidants as the three sputtering targets settle in the sputtering equipment, in which positioned a blinder in front of each sputtering target and base plate, controlled independently the sedimentation velocities of the metal and oxidants, to prepare composite films of gold and silver pure metal nanometer scattering oxidants, which is of nano layered structure; the specific steps are as follows: preparing a nanometer particle monolayer film of Au or Ag, then depositing an oxide film, and another nanometer monolayer film of Au or Ag, then another oxide film. Alternate depositing according to such priority to get a composite film of gold and silver pure metal nanometer scattering oxidants, which is of nano layered structure. The advantage lies in the excellent non-linear optical characteristic.

The present invention provides hydrogels and methods of making hydrogels with precisely controlled levels of chemical compositions by mixing one or more monomers in a plasma reactor; polymerizing the one or more monomers into a polymer; crosslinking the polymer to form a hydrogel; immersing the hydrogel in a first solution; and adsorbing one or more solute species from the solution, wherein the one or more solute species are released at controlled rates.

The invention discloses a magnetron sputtering film coating device capable of automatically controlling plasma parameters. The magnetron sputtering film coating device comprises a vacuum room and a plasma radio-frequency power supply; a motive seal structure used for penetrating through a plasma probe is arranged on the vacuum room, and the output end of the plasma probe is connected with the input end of a data collecting and processing system; and the output end of the data collecting and processing system is connected with the input end of a PC, the output end of the PC is connected with the input end of a PLC, and the output end of the PLC is connected with the plasma radio-frequency power supply. According to the magnetron sputtering film coating device capable of automatically controlling the plasma parameters, a plasma probe system is treated as a monitoring way of the plasma parameters, and the PC and the PLC are treated as operation units to control the parameters in the magnetron sputtering film coating process, so that the magnetron sputtering film coating process is complete in intelligent automation, and a high-quality finished film is manufactured.

The invention discloses a method for growing a high-dielectric constant dielectric lamination. The method comprises the following steps: growing a first layer of high-dielectric constant dielectrics on a substrate by adopting a hot-mode atomic layer deposition method; growing a second layer of high-dielectric constant dielectrics on the first layer of high-dielectric constant dielectrics by adopting a plasma enhanced-mode atomic layer deposition method. According to the method disclosed by the invention, compared with the high-dielectric constant dielectrics obtained by single-mode deposition, the laminated high-dielectric constant dielectrics obtained by utilizing compound-mode atomic layer deposition not only are capable of avoiding the ion damage and the interface oxidation of the surface of the substrate but also are capable of avoiding the phenomenon that electrical property is degraded due to the fact that devices are put in a high-temperature reaction cavity for a long time. Meanwhile, the laminated high-dielectric constant dielectrics have the advantages that the surface step coverage is good and the film thickness can be accurately controlled. The method for growing the high-dielectric constant dielectric lamination is compatible with a traditional silica-based semiconductor process.

The invention discloses an LB quantum dot film, a light-emitting diode and a preparation method thereof. The preparation method of the LB quantum dot film comprises the steps that a purified quantum dot solution is dropped on the interface of water/ethylene glycol so that the quantum dot solution is enabled to be uniformly scattered on the interface of water/ethylene glycol, the organic solvent volatilizes for 5-30mins, the quantum dots are uniformly tiled, the film pressure is controlled at 7.5-40mN/m, hydrophobic treating is performed on the base below water/ethylene glycol and then drawing is performed by using an LB film drawing machine so that the single-layer LB quantum dot film is obtained; and the steps are repeated so that the multilayer LB quantum dot film is obtained. The LB film formation technology is stable and convenient to operate, large-area film formation can be performed and the thickness of the film is accurately controllable so that the number of the layers of the LB quantum dot film can be controlled. The LB quantum dot film acts as the quantum dot light-emitting layer of an LED device so that the performance of the LED device is stable, and the performance of the LED device can be further regulated and controlled by regulating and controlling the thickness of the LB quantum dot film.

The present invention provides simplified manufacture process of TFT structure of different source electrode/drain electrode materials and one electro-optical display device capable of controlling the thickness of semiconductor film layer forming the TFT channels accurately for homogeneous display. The drain electrode is configured to extend from the active region to the transparent insulating substrate below the pixel electrode. The source electrode and the source wire are so configured that their ends are in the back of the semiconductor film, and the drain electrode on the active region has also end in the back of the semiconductor film.

The invention relates to the technical field of thin film materials, in particular to a preparation method of periodic multi-directional thickness gradient thin films. The method comprises the following steps that a mask plate is fixed above a substrate in a suspended mode, the mask plate is putted into a vacuum cavity of a sputtering instrument, a target material is fixed on a cathode, the substrate is putted on an anode opposite to a target surface, and after vacuumizing is carried out, inert gas is introduced, and the periodic multi-directional thickness gradient thin films are prepared through a sputtering method, wherein the distance between the mask plate and the substrate is h, the mask plate is provided with meshes, the mesh size is recorded as w, the rib width is recorded as d, h,w and d are adjustable, and h is greater than 0. According to the method, the multi-directional thickness gradient thin films can be prepared at a time and are periodically and densely arranged, theperiodic multi-directional thickness gradient thin films have the characteristic of high flux, the large-scale integration research and application are facilitated, and the application prospects in the field of flexible electronic materials and devices is wide.

The invention belongs to the technical field of high-temperature coating preparation, and particularly relates to a preparation method of a high-temperature oxidation-resistant ReAl coating, which comprises the steps of: smelting Re metal and Al metal at an atomic ratio of 1:1 into an alloy rod, placing in an electron beam physical vapor deposition vacuum chamber, preparing the coating by adopting electron beam physical vapor deposition technology, cooling the specimen, and then carrying out heat treatment in vacuum to obtain the high-temperature oxidation-resistant ReAl coating. The coating obtained by the method has good binding force with a substrate, and the obtained structure is the columnar crystal structure; the electron beam power is easy to adjust, the size and position of the beam spot are easy to control, and the thickness and uniformity of the film can be accurately controlled; and the obtained coating has excellent surface roughness and excellent aerodynamic performance.

The invention discloses a film paving monitoring device for a powder resin covering filter. The film paving monitoring device for the powder resin covering filter comprises infrared waterproof camera monitoring detection equipment (1), an intelligent calculation controller (2) and a supersonic cleaning device (3). Equipment operation and the surface morphology and mounting and fixing conditions of a filter element in the film paving process are continuously monitored by the infrared waterproof camera monitoring detection equipment (1) arranged at the two thirds height at the straight edge of the powder resin covering filter, and the film paving thickness is calculated by the intelligent calculation controller (2). The surface of a camera lens is cleaned by the supersonic cleaning device (3) and the measuring precision is prevented from being influenced by dirty attachment. The infrared waterproof camera monitoring detection equipment (1) has both the video monitoring and the measuring function for the film paving thickness, can accurately control the film paving process and the film paving thickness, and solves the phenomena of short operation period, incomplete film explosion and uneven film paving in the existing powder resin filter, and the automated control level of a condensed water polishing system of an air cooling unit is improved.

The invention discloses a light-emitting diode and laser of a p-GaN/ZnO-based multi-quantum well/n-ZnO structure and a preparation method. The light-emitting diode and laser includes a p-GaN layer, a ZnO-ZnMgO multi-quantum well layer, an n-ZnO layer and metal electrodes. The preparation method includes the steps of: first adopting a molecular beam epitaxy method to successively prepare the ZnO/ZnMgO multi-quantum well layer and the n-ZnO layer on a p-GaN film; and then plating the metal electrodes in p-GaN and n-ZnO regions respectively. The device prepared by the invention adopts the ZnO/ZnMgO multi-quantum well as an active layer, and a threshold value of the light-emitting diode and laser be lowered and luminous efficiency can be improved; in addition, to solve the problem that efficient and stable p-ZnO is difficult to realize in a homogeneous structure, the device adopts p-GaN as a hole injection layer; and at the same time, compared with other p type materials, GaN has the advantages of having the same structure as ZnO and having low epitaxial mismatch.