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40results about How to "Precise control of film thickness" patented technology
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Evaporation or sublimation method and crucible device for evaporation material in vacuum evaporation device
ActiveCN102277557AWill not deteriorateDoes not reduce transmittanceVacuum evaporation coatingSputtering coatingInfraredCrucible
The invention provides an evaporation or sublimation method of evaporation material in a vacuum evaporation unit, and a crucible unit for vacuum evaporation. The units can work continuously for a long term and prevent the degradation of the evaporation material. In a crucible base (13), a radioactive heat source (21) radiating heat waves mainly including infrared ray is disposed in a heat wave transmission tube (22). The heat wave transmission tube (22) is made of material through which the infrared ray can transmit. The heat waves from the radioactive heat source (21) emit on the surface of the evaporation material M in a crucible body (12) and heat the evaporation material to make the surface of the evaporation material M for evaporation or sublimation. Even if the evaporated or sublimated evaporation material M is adhered on the surface of the heat wave transmission tube (22) or the inner surfaces of the crucible body (12) and the crucible base (13), the heat waves can be used to make the evaporated or sublimated evaporation material M for evaporation or sublimation again.
Owner:HITACHI ZOSEN CORP
Electroluminescent component and packaging method thereof
InactiveCN103531725APrevent overflowPrecise control of film thicknessSolid-state devicesSemiconductor/solid-state device manufacturingAdhesiveEngineering
The invention provides an electroluminescent component and a packaging method thereof. The packaging method provided by the invention comprises the steps of providing a cover plate, wherein a plurality of overflow holes are formed in the cover plate to form a wire frame-shaped overflow area and the overflow holes are semi-transparent holes and are distributed along the edge of the cover plate; coating transparent drying agent and filling adhesive on the cover plate, wherein the drying agent is in the overflow area and the filling adhesive surrounds the overflow area; providing a substrate, wherein at least one electroluminescent element is formed on the substrate; press-fitting the substrate and the cover plate to enable the drying agent to be evenly distributed between the cover plate and the electroluminescent element, wherein the overflowing drying agent enters the overflow holes; and providing the filling adhesive for solidifying the substrate and the cover plate to form the packaging structure. The electroluminescent component and the packaging method thereof have the advantages that the drying agent in a limited area in a packaging weir can be fully filled, the drying agent does not flow over the packaging weir, the accurate control of the formed film thickness of the drying agent is facilitated and air bubbles are prevented from being produced.
Owner:EVERDISPLAY OPTRONICS (SHANGHAI) CO LTD
Sputtering apparatus
InactiveUS20070246356A1Precise control of film thicknessIncrease flexibilityCellsElectric discharge tubesSputteringOptoelectronics
A sputtering apparatus is disclosed which enables highly accurate monitor control of a film thickness and allows enhanced flexibility in design. The apparatus includes a substrate placement area in which a substrate is placed, a particle emission area in which a target is placed and sputter particles from the target are emitted, and a sensor placement area in which a sensor is placed for measuring a thickness of a film formed on the substrate. The substrate placement area and the sensor placement area are provided in a positional relationship having symmetry with respect to a center line of the particle emission area.
Owner:CANON KK
Process for making light waveguide element
InactiveUS6974714B2Precise vertical optical axis alignmentMinimize changesSemiconductor/solid-state device manufacturingOptical articlesVertical alignmentChemical vapor deposition
A process for making a light waveguide element is made by forming only an upper clad layer (40) and a core layer (32) without etching an optical axis height-adjusting sections. By using plasma chemical vapor deposition (CVD) which is good at controlling the film thickness, it is possible to provide without difficulty a light waveguide element with a height-adjusting section that has a precise film thickness, making it possible to provide precise optical axis vertical alignment upon mounting. By forming alignment markers in the same photolithography as that of the core formation, it is possible to provide precise horizontal optical axis alignment.
Owner:NEOPHOTONICS CORP
Pt Ni Al bonding layer doped with binary trace active elements and capable of being completely oxidation resisting at 1200 DEG C and preparation method thereof
ActiveCN103966615AImprove high temperature oxidation resistanceImprove adhesionVacuum evaporation coatingSputtering coatingOxidation resistantThermal barrier coating
The present invention discloses a Pt Ni Al bonding layer doped with binary trace active elements and capable of being completely oxidation resisting at 1200 DEG C and a preparation method thereof and belongs to the field of novel thermal barrier coatings and the preparation technologies. According to the invention, firstly, a Pt layer with the thickness of 5-10 microns is prepared on a nickel base monocrystal high temperature alloy matrix through the plating or the electron beam physical vapor deposition method, and then a NiAlHfZr coating with the thickness of 20-60 microns is deposited on the Pt layer through the electron beam physical vapor deposition method. The Pt layer reduces the interfacial holes and effectively improves the adhesion of an oxidation film; binary doping of Hf, Zr enables the NiAl coating surface to be smoother and denser and enables the oxidation film generated during the oxidation process on the coating surface to be straighter, especially with little oxidation increase, and greatly improves the oxidation resistance of the coating. The Pt Ni Al bonding layer is completely oxidation resisting at 1200 DEG C. The service life of the coating is prolonged to certain degree through doping of binary elements namely Hf and Zr and Pt modification.
Owner:BEIHANG UNIV
Method for preparing optical thin film with gold silver nanometer particle and dispersal oxide
InactiveCN1670239AEvenly dispersedExcellent nonlinear characteristicsVacuum evaporation coatingSputtering coatingComposite filmMetallic materials
The invention provides a method for making an optical film of scattering oxidants by gold and silver nanometer particles, belonged to the art of metal nanometer particle and inorganic non-metallic material composite technique. Au, Ag and oxidants as the three sputtering targets settle in the sputtering equipment, in which positioned a blinder in front of each sputtering target and base plate, controlled independently the sedimentation velocities of the metal and oxidants, to prepare composite films of gold and silver pure metal nanometer scattering oxidants, which is of nano layered structure; the specific steps are as follows: preparing a nanometer particle monolayer film of Au or Ag, then depositing an oxide film, and another nanometer monolayer film of Au or Ag, then another oxide film. Alternate depositing according to such priority to get a composite film of gold and silver pure metal nanometer scattering oxidants, which is of nano layered structure. The advantage lies in the excellent non-linear optical characteristic.
Owner:UNIV OF SCI & TECH BEIJING
Controlled Release Hydrogel Films
InactiveUS20100303877A1Increased level of controlPrecise control of film thicknessPowder deliveryBiocideChemistryControl level
The present invention provides hydrogels and methods of making hydrogels with precisely controlled levels of chemical compositions by mixing one or more monomers in a plasma reactor; polymerizing the one or more monomers into a polymer; crosslinking the polymer to form a hydrogel; immersing the hydrogel in a first solution; and adsorbing one or more solute species from the solution, wherein the one or more solute species are released at controlled rates.
Owner:BOARD OF RGT THE UNIV OF TEXAS SYST
Magnetron sputtering film coating device capable of automatically controlling plasma parameters
InactiveCN106521447AImprove qualityPrecise control of coating timeVacuum evaporation coatingSputtering coatingSputteringData acquisition
The invention discloses a magnetron sputtering film coating device capable of automatically controlling plasma parameters. The magnetron sputtering film coating device comprises a vacuum room and a plasma radio-frequency power supply; a motive seal structure used for penetrating through a plasma probe is arranged on the vacuum room, and the output end of the plasma probe is connected with the input end of a data collecting and processing system; and the output end of the data collecting and processing system is connected with the input end of a PC, the output end of the PC is connected with the input end of a PLC, and the output end of the PLC is connected with the plasma radio-frequency power supply. According to the magnetron sputtering film coating device capable of automatically controlling the plasma parameters, a plasma probe system is treated as a monitoring way of the plasma parameters, and the PC and the PLC are treated as operation units to control the parameters in the magnetron sputtering film coating process, so that the magnetron sputtering film coating process is complete in intelligent automation, and a high-quality finished film is manufactured.
Owner:合肥优亿科机电科技有限公司
Plasma resonance tilted fiber Bragg grating hydrogen sensor, detection system and method
InactiveCN110261351ARealize high-precision measurementPlated evenlyMaterial analysis by optical meansGratingPhotovoltaic detectors
The invention discloses a plasma resonance tilted fiber Bragg grating hydrogen sensor, a plasma resonance tilted fiber Bragg grating hydrogen detection system and a plasma resonance tilted fiber Bragg grating hydrogen method. The system comprises a light source, a polarizer, a polarization controller, a plasma resonance tilted fiber Bragg grating hydrogen sensor, a photoelectric detector, an oscilloscope and a gas storage container; the light source, the polarizer, the polarization controller, the hydrogen sensor, the photoelectric detector and the oscilloscope are sequentially connected with one another; the hydrogen sensor is arranged in the gas storage container when hydrogen is measured; the hydrogen sensor comprises an optical fiber engraved with a tilted fiber Bragg grating; the tilt angle of the tilted fiber Bragg grating is smaller than or equal to 45 degrees; the outer surface of the cladding layer of the optical fiber is plated with a nano-scale palladium film; plasma resonance waves on the surface of the palladium film are excited through the tilted fiber Bragg grating plated with the palladium film, so that specific recognition is carried out on the hydrogen; and the high-precision measurement of the static concentration and dynamic concentration change of the hydrogen is further realized.
Owner:JINAN UNIVERSITY
Titanium dioxide nanorod film with high photocatalysis efficiency and preparation method thereof
InactiveCN107699855ASimple processEasy to operateMaterial nanotechnologyVacuum evaporation coatingOxygenAqueous solution
The invention discloses a titanium dioxide nanorod film with high photocatalysis efficiency and a preparation method and application thereof. The film is composed of anatase-phased or rutile-phased TiO2 nanorods, and the thickness of the film is 200-2200 nm. The preparation method of the film adopts a magnetron sputtering method and comprises the steps that a substrate used for preparing the filmis washed; a titanium target and the washed substrate are fed into a magnetron sputtering cavity, and the distance between the target and the substrate is adjusted; and inert gas is introduced to pre-sputter the target firstly, then oxygen is introduced, deposition of the titanium dioxide nanorod film is conducted on the substrate, and the titanium dioxide nanorod film is prepared. In the preparation method, the reaction gas is only CO2, the shape and thickness of the film can be controlled by adjusting the oxygen flow and the film deposition time, the prepared film has high photocatalytic activity, and the film has the hydrogen production rate of 1-40 mmol.m<-2>.h<-1> under irradiation of a 300-W xenon lamp when being put into a quartz reaction vessel containing 100 ml of methanol aqueoussolutions (CH3OH:H2O=1:10 v / v).
Owner:FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
Method for growing high-dielectric constant dielectric lamination
InactiveCN103311120AAvoid ionic damage and interface oxidationAvoid electrical performance degradationSemiconductor/solid-state device manufacturingIonComputational physics
The invention discloses a method for growing a high-dielectric constant dielectric lamination. The method comprises the following steps: growing a first layer of high-dielectric constant dielectrics on a substrate by adopting a hot-mode atomic layer deposition method; growing a second layer of high-dielectric constant dielectrics on the first layer of high-dielectric constant dielectrics by adopting a plasma enhanced-mode atomic layer deposition method. According to the method disclosed by the invention, compared with the high-dielectric constant dielectrics obtained by single-mode deposition, the laminated high-dielectric constant dielectrics obtained by utilizing compound-mode atomic layer deposition not only are capable of avoiding the ion damage and the interface oxidation of the surface of the substrate but also are capable of avoiding the phenomenon that electrical property is degraded due to the fact that devices are put in a high-temperature reaction cavity for a long time. Meanwhile, the laminated high-dielectric constant dielectrics have the advantages that the surface step coverage is good and the film thickness can be accurately controlled. The method for growing the high-dielectric constant dielectric lamination is compatible with a traditional silica-based semiconductor process.
Owner:INST OF MICROELECTRONICS CHINESE ACAD OF SCI
LB quantum dot film, light-emitting diode and preparation method thereof
InactiveCN106340573APrecise control of film thicknessImprove stabilitySemiconductor devicesQuantum dotQuantum
The invention discloses an LB quantum dot film, a light-emitting diode and a preparation method thereof. The preparation method of the LB quantum dot film comprises the steps that a purified quantum dot solution is dropped on the interface of water / ethylene glycol so that the quantum dot solution is enabled to be uniformly scattered on the interface of water / ethylene glycol, the organic solvent volatilizes for 5-30mins, the quantum dots are uniformly tiled, the film pressure is controlled at 7.5-40mN / m, hydrophobic treating is performed on the base below water / ethylene glycol and then drawing is performed by using an LB film drawing machine so that the single-layer LB quantum dot film is obtained; and the steps are repeated so that the multilayer LB quantum dot film is obtained. The LB film formation technology is stable and convenient to operate, large-area film formation can be performed and the thickness of the film is accurately controllable so that the number of the layers of the LB quantum dot film can be controlled. The LB quantum dot film acts as the quantum dot light-emitting layer of an LED device so that the performance of the LED device is stable, and the performance of the LED device can be further regulated and controlled by regulating and controlling the thickness of the LB quantum dot film.
Owner:TCL CORPORATION
Preparation method of large-area organic polymer solar cells
InactiveCN103078060BIncrease widthShorten production timeFinal product manufactureSolid-state devicesOrganic solar cellCoating system
Owner:HEBEI UNIVERSITY
Equipment and method for preparing perovskite material based on atomization gas-liquid-solid thermal deposition method
ActiveCN112239409AIncrease profitUniform thicknessOrganic compound preparationAmino compound preparationPhysical chemistryHeat deposition
The invention provides equipment for preparing a perovskite material based on an atomization gas-liquid-solid thermal deposition method, wherein the equipment comprises an atomization part, a deposition part and a heating part; the atomization part is used for continuously atomizing a perovskite material precursor solution obtained through dissolving a perovskite material precursor in a solvent, so as to generate a perovskite precursor atomization flow; the deposition part is used for allowing the perovskite material precursor atomized flow to continuously deposit thereon to form a solvent-containing perovskite material precursor deposit; and the heating part is used for continuously heating the deposition part and volatilizing the solvent to grow the perovskite material while the perovskite material precursor deposit containing the solvent is formed. The invention further provides a method for preparing the perovskite material by adopting the equipment. The equipment and the method disclosed by the invention are carried out in real time by adopting atomization, deposition and heating curing, belong to a gas-liquid-solid method, have high utilization rate on the perovskite materialprecursor solution, and can be used for preparing the perovskite material with adjustable and uniform thickness and large grain size.
Owner:深圳市惠能材料科技研发中心(有限合伙)
Electro-optical display device and method for manufacturing same
InactiveCN1881593APrevent electrical conductionPrevents deterioration of cut-off characteristicsSolid-state devicesSemiconductor/solid-state device manufacturingDisplay deviceEngineering
The present invention provides simplified manufacture process of TFT structure of different source electrode / drain electrode materials and one electro-optical display device capable of controlling the thickness of semiconductor film layer forming the TFT channels accurately for homogeneous display. The drain electrode is configured to extend from the active region to the transparent insulating substrate below the pixel electrode. The source electrode and the source wire are so configured that their ends are in the back of the semiconductor film, and the drain electrode on the active region has also end in the back of the semiconductor film.
Owner:MITSUBISHI ELECTRIC CORP
Preparation method of periodic multi-directional thickness gradient thin films
InactiveCN111910149AImprove throughputConducive to integrated researchVacuum evaporation coatingSputtering coatingTarget surfaceHigh flux
The invention relates to the technical field of thin film materials, in particular to a preparation method of periodic multi-directional thickness gradient thin films. The method comprises the following steps that a mask plate is fixed above a substrate in a suspended mode, the mask plate is putted into a vacuum cavity of a sputtering instrument, a target material is fixed on a cathode, the substrate is putted on an anode opposite to a target surface, and after vacuumizing is carried out, inert gas is introduced, and the periodic multi-directional thickness gradient thin films are prepared through a sputtering method, wherein the distance between the mask plate and the substrate is h, the mask plate is provided with meshes, the mesh size is recorded as w, the rib width is recorded as d, h,w and d are adjustable, and h is greater than 0. According to the method, the multi-directional thickness gradient thin films can be prepared at a time and are periodically and densely arranged, theperiodic multi-directional thickness gradient thin films have the characteristic of high flux, the large-scale integration research and application are facilitated, and the application prospects in the field of flexible electronic materials and devices is wide.
Owner:HANGZHOU DIANZI UNIV
Preparation method of high-temperature oxidation-resistant ReAl coating
InactiveCN102703863AImprove surface roughnessImprove aerodynamic performanceVacuum evaporation coatingSputtering coatingElectron beam physical vapor depositionAlloy
The invention belongs to the technical field of high-temperature coating preparation, and particularly relates to a preparation method of a high-temperature oxidation-resistant ReAl coating, which comprises the steps of: smelting Re metal and Al metal at an atomic ratio of 1:1 into an alloy rod, placing in an electron beam physical vapor deposition vacuum chamber, preparing the coating by adopting electron beam physical vapor deposition technology, cooling the specimen, and then carrying out heat treatment in vacuum to obtain the high-temperature oxidation-resistant ReAl coating. The coating obtained by the method has good binding force with a substrate, and the obtained structure is the columnar crystal structure; the electron beam power is easy to adjust, the size and position of the beam spot are easy to control, and the thickness and uniformity of the film can be accurately controlled; and the obtained coating has excellent surface roughness and excellent aerodynamic performance.
Owner:NORTH CHINA ELECTRIC POWER UNIV (BAODING)
Copper phthalocyanine-cuprous oxide composite gas sensor and preparation method thereof
InactiveCN106770470BImprove stabilityLower working temperatureMaterial analysis by electric/magnetic meansOxide compositePhthalocyanine
The invention discloses a copper phthalocyanine-cuprous oxide composite gas-sensitive component and a preparation method thereof. The gas-sensitive component is prepared by coating a substrate, attached with an electrode, with film-shaped copper phthalocyanine-cuprous oxide, wherein the copper phthalocyanine is bar-shaped and the cuprous oxide is granular. The preparation method comprises the following steps: preparing a copper phthalocyanine sulfuric acid solution, adding the copper phthalocyanine sulfuric acid solution into deionized water, stirring and filtering to obtain filter cakes; putting the filter cakes into acid and alkali solutions, dispersing, performing suction filtration, washing the purified copper phthalocyanine with deionized water and drying to obtain copper phthalocyanine nanorods; mixing the copper phthalocyanine nanorods and cuprous oxide nanoparticles, dispersing the mixture into normal butanol, putting the obtained mixed solution on the surface of the deionized water by an interface self-assembling method to form a copper phthalocyanine-cuprous oxide film; and taking the film by using the substrate attached with the electrode and drying the film on the substrate to prepare a target product. The copper phthalocyanine-cuprous oxide composite gas-sensitive component is widely applied to high-sensitivity detection on trimethylamine gas easily and commercially.
Owner:HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
Preparation method of high-temperature oxidation-resistant ReAl coating
InactiveCN102703863BImprove surface roughnessImprove aerodynamic performanceVacuum evaporation coatingSputtering coatingElectron beam physical vapor depositionAlloy
The invention belongs to the technical field of high-temperature coating preparation, and particularly relates to a preparation method of a high-temperature oxidation-resistant ReAl coating, which comprises the steps of: smelting Re metal and Al metal at an atomic ratio of 1:1 into an alloy rod, placing in an electron beam physical vapor deposition vacuum chamber, preparing the coating by adopting electron beam physical vapor deposition technology, cooling the specimen, and then carrying out heat treatment in vacuum to obtain the high-temperature oxidation-resistant ReAl coating. The coating obtained by the method has good binding force with a substrate, and the obtained structure is the columnar crystal structure; the electron beam power is easy to adjust, the size and position of the beam spot are easy to control, and the thickness and uniformity of the film can be accurately controlled; and the obtained coating has excellent surface roughness and excellent aerodynamic performance.
Owner:NORTH CHINA ELECTRIC POWER UNIV (BAODING)
Method for growing VxC nano material by atomic layer deposition technology
ActiveCN112553600AGood shape retentionPrecise control of film thicknessMaterial nanotechnologyChemical vapor deposition coatingPropyl etherDiethyl ether
The invention discloses a method for growing a VxC nano material by an atomic layer deposition technology, and belongs to the field of nano materials. The method comprises the following steps of introducing gasified triisopropoxy vanadium oxide into a reaction cavity in a pulse form under a vacuum condition, depositing to obtain a substrate deposited with a V source, after purging, introducing a gas-phase carbon source in a pulse form, carrying out a monoatomic reaction on the carbon source and the V source deposited on the substrate to obtain a VxC nano-material with a monoatomic layer, purging again, and circulating the steps 1-2000 times to prepare the VxC nano-material grown by the atomic layer deposition technology, wherein the carbon source is one of diethyl ether, propyl ether, butyl ether or tetrahydrofuran. According to the method, the triisopropoxy vanadium oxide and the carbon source are combined and are further applied to the atomic layer deposition technology, so that a VxC-containing deposition layer with relatively good shape retention can be deposited on a nanoscale substrate.
Owner:JIANGNAN UNIV
Phthalocyanine/TiO2 ordered film and preparation method thereof
InactiveCN101879795BImprove stabilityGood nonlinear optical propertiesSynthetic resin layered productsOptical elementsNano structuringPhysical chemistry
Owner:HEILONGJIANG UNIV
Film paving monitoring device for powder resin covering filter
ActiveCN103869743AResolution cycleThe solution to the bursting film is not completeUsing optical meansProgramme control in sequence/logic controllersVideo monitoringCamera lens
The invention discloses a film paving monitoring device for a powder resin covering filter. The film paving monitoring device for the powder resin covering filter comprises infrared waterproof camera monitoring detection equipment (1), an intelligent calculation controller (2) and a supersonic cleaning device (3). Equipment operation and the surface morphology and mounting and fixing conditions of a filter element in the film paving process are continuously monitored by the infrared waterproof camera monitoring detection equipment (1) arranged at the two thirds height at the straight edge of the powder resin covering filter, and the film paving thickness is calculated by the intelligent calculation controller (2). The surface of a camera lens is cleaned by the supersonic cleaning device (3) and the measuring precision is prevented from being influenced by dirty attachment. The infrared waterproof camera monitoring detection equipment (1) has both the video monitoring and the measuring function for the film paving thickness, can accurately control the film paving process and the film paving thickness, and solves the phenomena of short operation period, incomplete film explosion and uneven film paving in the existing powder resin filter, and the automated control level of a condensed water polishing system of an air cooling unit is improved.
Owner:国能朗新明环保科技有限公司
A 1200°C complete anti-oxidation binary trace active element-doped ptnial bonding layer and its preparation method
ActiveCN103966615BImproved high temperature oxidation resistanceImprove high temperature oxidation resistanceVacuum evaporation coatingSputtering coatingElectron beam physical vapor depositionGas phase
The present invention discloses a Pt Ni Al bonding layer doped with binary trace active elements and capable of being completely oxidation resisting at 1200 DEG C and a preparation method thereof and belongs to the field of novel thermal barrier coatings and the preparation technologies. According to the invention, firstly, a Pt layer with the thickness of 5-10 microns is prepared on a nickel base monocrystal high temperature alloy matrix through the plating or the electron beam physical vapor deposition method, and then a NiAlHfZr coating with the thickness of 20-60 microns is deposited on the Pt layer through the electron beam physical vapor deposition method. The Pt layer reduces the interfacial holes and effectively improves the adhesion of an oxidation film; binary doping of Hf, Zr enables the NiAl coating surface to be smoother and denser and enables the oxidation film generated during the oxidation process on the coating surface to be straighter, especially with little oxidation increase, and greatly improves the oxidation resistance of the coating. The Pt Ni Al bonding layer is completely oxidation resisting at 1200 DEG C. The service life of the coating is prolonged to certain degree through doping of binary elements namely Hf and Zr and Pt modification.
Owner:BEIHANG UNIV
LED (light-emitting diode) module with cross-over electrode and manufacturing method thereof
InactiveCN102270652BThe overall thickness is thinImprove coating uniformitySolid-state devicesSemiconductor/solid-state device manufacturingEngineeringLight-emitting diode
The invention provides an LED (light-emitting diode) module with a cross-over electrode and a manufacturing method thereof. The LED module comprises a substrate, two LEDs, an insulating layer and the cross-over electrode, wherein the two LEDs are spaced apart on the substrate and the opposite surfaces of the two LEDs are stepped surfaces; the insulating layer is covered on the stepped surfaces, thus the insulating layer is also in a stepped thin film state; and the cross-over electrode is covered on the surface of the insulating layer and two sides of the cross-over electrode are respectivelyconnected with the n electrode of one LED and the p electrode of the other LED. In the LED module, by designing the stepped surfaces, the thinner insulating layer covers the cross-over electrode, thus increasing the emergent light proportion of the LEDs in a side direction and the overall light-emitting efficiency.
Owner:UBILUX OPTOELECTRONICS CORP
Method for preparing optical thin film with gold silver nanometer particle and dispersal oxide
InactiveCN100383275CGranularity precision controlDecentralized State Precise ControlVacuum evaporation coatingSputtering coatingComposite filmMetallic materials
The invention provides a method for making an optical film of scattering oxidants by gold and silver nanometer particles, belonged to the art of metal nanometer particle and inorganic non-metallic material composite technique. Au, Ag and oxidants as the three sputtering targets settle in the sputtering equipment, in which positioned a blinder in front of each sputtering target and base plate, controlled independently the sedimentation velocities of the metal and oxidants, to prepare composite films of gold and silver pure metal nanometer scattering oxidants, which is of nano layered structure; the specific steps are as follows: preparing a nanometer particle monolayer film of Au or Ag, then depositing an oxide film, and another nanometer monolayer film of Au or Ag, then another oxide film. Alternate depositing according to such priority to get a composite film of gold and silver pure metal nanometer scattering oxidants, which is of nano layered structure. The advantage lies in the excellent non-linear optical characteristic.
Owner:UNIV OF SCI & TECH BEIJING
Process for making light waveguide element
InactiveUS20050277213A1Precise vertical optical axis alignmentMinimize changesSemiconductor/solid-state device manufacturingCoupling light guidesVertical alignmentChemical vapor deposition
A light waveguide element is made by forming only an upper clad layer (40) and a core layer (32) without etching an optical axis height-adjusting sections. By using plasma chemical vapor deposition (CVD) which is good at controlling the film thickness, it is possible to provide without difficulty a light waveguide element with a height-adjusting section that has a precise film thickness, making it possible to provide precise optical axis vertical alignment upon mounting. By forming alignment markers in the same photolithography as that of the core formation, it is possible to provide precise horizontal optical axis alignment.
Owner:NEOPHOTONICS CORP
Large-area polymer solar cell and method for preparing active layer thereof
ActiveCN103794729BMeet the needs of industrial productionIncrease the areaLiquid surface applicatorsSolid-state devicesElectrical batteryElectron donor
The invention discloses a large-area polymer solar cell and a preparation method for an active layer thereof, belonging to the technical field of solar cells. The method solves the technical problem that the active layer prepared by the spin coating process in the prior art has a small area, cannot meet the preparation requirements of large-area battery modules and serial modules, and is not suitable for industrial production. The preparation method of the active layer of the present invention is to dissolve the electron donor material and the electron acceptor material in an organic solvent, heat and stir to obtain a uniform mixed solution, and then add additives to the mixed solution to obtain the spray ink of the active layer , and then the spraying ink is added into the ultrasonic spraying apparatus, and the active layer of the polymer solar cell is obtained by in-situ atmosphere treatment during the spraying process. The invention can prepare the active layer of the large-area solar cell in the atmospheric environment, and ensure that the active layer of the large-area solar cell has high photoelectric conversion efficiency.
Owner:CHANGCHUN INST OF APPLIED CHEMISTRY - CHINESE ACAD OF SCI
An atomic layer deposition technique for growing v x c nanomaterials approach
ActiveCN112553600BGood shape retentionPrecise control of film thicknessMaterial nanotechnologyChemical vapor deposition coatingGas phasePropyl ether
The invention discloses an atomic layer deposition technique for growing V x The method of C nanomaterials belongs to the field of nanomaterials. Under vacuum conditions, the vaporized triisopropoxyvanadium oxide is introduced into the reaction chamber in a pulse form for deposition to obtain a substrate deposited with a V source. After sweeping, the gas-phase carbon source is introduced in a pulse form, and a single-atom reaction is performed with the V source deposited on the substrate to obtain a single-atom layer of V x C nanomaterials, purging again, and then repeating the above steps 1 to 2000 times, can be prepared by atomic layer deposition technology growth V x C nanomaterials, wherein the carbon source is one of ether, propyl ether, butyl ether, or tetrahydrofuran. The present invention adopts the combination of triisopropoxy vanadium oxide and carbon source, and further applies it in atomic layer deposition technology, so that it can be deposited on a nanoscale substrate to form V-containing x C deposition layer.
Owner:JIANGNAN UNIV
Light-emitting diode and laser of p-GaN/ZnO-based multi-quantum well/n-ZnO structure and preparation method
InactiveCN105762243AStable and reliable p-type conductivitySmall epitaxial mismatchLaser detailsSemiconductor lasersHole injection layerQuantum well
The invention discloses a light-emitting diode and laser of a p-GaN / ZnO-based multi-quantum well / n-ZnO structure and a preparation method. The light-emitting diode and laser includes a p-GaN layer, a ZnO-ZnMgO multi-quantum well layer, an n-ZnO layer and metal electrodes. The preparation method includes the steps of: first adopting a molecular beam epitaxy method to successively prepare the ZnO / ZnMgO multi-quantum well layer and the n-ZnO layer on a p-GaN film; and then plating the metal electrodes in p-GaN and n-ZnO regions respectively. The device prepared by the invention adopts the ZnO / ZnMgO multi-quantum well as an active layer, and a threshold value of the light-emitting diode and laser be lowered and luminous efficiency can be improved; in addition, to solve the problem that efficient and stable p-ZnO is difficult to realize in a homogeneous structure, the device adopts p-GaN as a hole injection layer; and at the same time, compared with other p type materials, GaN has the advantages of having the same structure as ZnO and having low epitaxial mismatch.
Owner:ZHEJIANG UNIV
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