Titanium dioxide nanorod film with high photocatalysis efficiency and preparation method thereof

A technology of titanium dioxide and nanorods, which is applied in the field of semiconductor photocatalysis, can solve the problem of large deposition area and achieve the effects of uniform film formation, uniform shape and size, and easy operation

Inactive Publication Date: 2018-02-16
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Specifically, the magnetron sputtering method is adopted in the method of the present invention, which has the advantages of fast film deposition speed, large deposition area, uniform film formation, strong film adhesion, easy realization of low-temperature film deposition, and precise control of film thickness. Controlling the growth of the thin film is easy to expose the highly active crystal facets, so that the prepared nanorod thin film has the advantages of ultra-high photocatalytic activity, so it can effectively overcome the defects of the existing thin film preparation methods

Method used

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  • Titanium dioxide nanorod film with high photocatalysis efficiency and preparation method thereof
  • Titanium dioxide nanorod film with high photocatalysis efficiency and preparation method thereof
  • Titanium dioxide nanorod film with high photocatalysis efficiency and preparation method thereof

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Effect test

Embodiment 1

[0072] Use quartz glass as the substrate, put it into the cavity of the magnetron sputtering equipment after cleaning, and adjust the distance between the target and the substrate to 110mm. Using a mechanical pump, the molecular pump is evacuated until the cavity vacuum reaches 3.0×10 -3 After Pa, the substrate was heat-treated at 400°C for 2h. Then close the substrate baffle, feed argon gas with a flow rate of 40 sccm, adjust the sputtering power of the titanium target to 130W, the total working pressure to 0.5Pa, and pre-sputter for 30min. Afterwards, oxygen was introduced, the flow rate was 4 sccm, and the working pressure was adjusted at 0.3 Pa. The substrate baffle was opened, and the deposition of titanium dioxide nanorod film was started. The whole deposition process lasted 4 hours and the temperature of the substrate was kept at 450°C. figure 1 and figure 2 are the cross-sectional SEM and XRD patterns of the titanium dioxide film, respectively. The thickness of the...

Embodiment 2

[0074] Use quartz glass as the substrate, put it into the cavity of the magnetron sputtering equipment after cleaning, and adjust the distance between the target and the substrate to 110mm. Using a mechanical pump, the molecular pump is evacuated until the cavity vacuum reaches 4.0×10 -3 After Pa, the substrate was heat-treated at 400°C for 2h. Then close the substrate baffle, feed argon gas with a flow rate of 50 sccm, adjust the sputtering power of the titanium target to 120W, the total working pressure to 0.5Pa, and pre-sputter for 30min. Afterwards, oxygen was introduced, the flow rate was 8 sccm, and the working pressure was adjusted at 0.4Pa. The substrate baffle was opened, and the deposition of titanium dioxide nanorod film was started. The whole deposition process lasted 9 hours and the temperature of the substrate was kept at 400°C. Figure 4 are the cross-sectional SEM images of the titanium dioxide film, respectively. The titanium dioxide film thickness of gained...

Embodiment 3

[0076] Use quartz glass as the substrate, put it into the cavity of the magnetron sputtering equipment after cleaning, and adjust the distance between the target and the substrate to 110mm. Using a mechanical pump, the molecular pump is evacuated until the cavity vacuum reaches 4.0×10 -3 After Pa, the substrate was heat-treated at 400°C for 2h. Then close the substrate baffle, feed argon gas with a flow rate of 30 sccm, adjust the sputtering power of the titanium target to 100W, the total working pressure to 0.5Pa, and pre-sputter for 30min. Afterwards, oxygen was introduced at a flow rate of 15 sccm, and the working pressure was adjusted at 0.5 Pa. The substrate baffle was opened to start the deposition of the titanium dioxide nanorod film. The entire deposition process lasted 20 hours and the temperature of the substrate was kept at 500°C. Figure 6 and Figure 7 are the cross-sectional SEM and XRD patterns of the titanium dioxide film, respectively. The obtained titanium...

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Abstract

The invention discloses a titanium dioxide nanorod film with high photocatalysis efficiency and a preparation method and application thereof. The film is composed of anatase-phased or rutile-phased TiO2 nanorods, and the thickness of the film is 200-2200 nm. The preparation method of the film adopts a magnetron sputtering method and comprises the steps that a substrate used for preparing the filmis washed; a titanium target and the washed substrate are fed into a magnetron sputtering cavity, and the distance between the target and the substrate is adjusted; and inert gas is introduced to pre-sputter the target firstly, then oxygen is introduced, deposition of the titanium dioxide nanorod film is conducted on the substrate, and the titanium dioxide nanorod film is prepared. In the preparation method, the reaction gas is only CO2, the shape and thickness of the film can be controlled by adjusting the oxygen flow and the film deposition time, the prepared film has high photocatalytic activity, and the film has the hydrogen production rate of 1-40 mmol.m<-2>.h<-1> under irradiation of a 300-W xenon lamp when being put into a quartz reaction vessel containing 100 ml of methanol aqueoussolutions (CH3OH:H2O=1:10 v / v).

Description

technical field [0001] The invention relates to the technical field of semiconductor photocatalysis, in particular to the technical field of titanium dioxide photocatalytic thin films, in particular to a titanium dioxide nanorod thin film with high photocatalytic efficiency and a preparation method thereof. Background technique [0002] With the increasing demand for clean new energy, hydrogen energy has come into people's sight. It is considered to be one of the effective means to solve the current massive emissions of greenhouse gases and relieve the depletion of oil resources. But today, nearly 90% of hydrogen is produced from petroleum, and the production of hydrogen is accompanied by a large amount of greenhouse gas emissions. In the 1970s, Japanese scientists Fujishima and Honda used titanium dioxide as a catalytic electrode in the laboratory to successfully realize hydrogen production by splitting water with light as the driving energy. This great discovery has arou...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/35B82Y30/00B82Y40/00
CPCC23C14/083B82Y30/00B82Y40/00C23C14/0036C23C14/35
Inventor 郭旺胡倩倩黄集权邓种华李国京王充陈剑江亚斌
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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