LB quantum dot film, light-emitting diode and preparation method thereof

A technology of quantum dot light-emitting and light-emitting diodes, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of deviceization and quantum dot immobilization, and achieve low cost, highly ordered molecular arrangement, and high stability. Effect

Inactive Publication Date: 2017-01-18
TCL CORPORATION
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Problems solved by technology

[0006] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a LB quantum dot thin film, a light-em

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  • LB quantum dot film, light-emitting diode and preparation method thereof
  • LB quantum dot film, light-emitting diode and preparation method thereof

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Embodiment Construction

[0029] The present invention provides a LB quantum dot thin film, a light-emitting diode and a preparation method thereof. In order to make the purpose, technical solution and effect of the present invention clearer and clearer, the present invention will be further described in detail below. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0030] It is stated in advance that there is no special requirement for the quantum dots used in the present invention, and the quantum dots may be oil-soluble quantum dots. Specifically, the oil-soluble quantum dots may be one of binary phase quantum dots, ternary phase quantum dots and quaternary phase quantum dots. For example, binary phase quantum dots include but not limited to CdSe, CdS, PbSe, PbS, ZnS, InP, HgS, AgS, etc., ternary phase quantum dots include but not limited to Zn X Cd 1-X S / ZnS, CuInS, PbSe X S 1-X / PbS, CdSe / ...

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Abstract

The invention discloses an LB quantum dot film, a light-emitting diode and a preparation method thereof. The preparation method of the LB quantum dot film comprises the steps that a purified quantum dot solution is dropped on the interface of water/ethylene glycol so that the quantum dot solution is enabled to be uniformly scattered on the interface of water/ethylene glycol, the organic solvent volatilizes for 5-30mins, the quantum dots are uniformly tiled, the film pressure is controlled at 7.5-40mN/m, hydrophobic treating is performed on the base below water/ethylene glycol and then drawing is performed by using an LB film drawing machine so that the single-layer LB quantum dot film is obtained; and the steps are repeated so that the multilayer LB quantum dot film is obtained. The LB film formation technology is stable and convenient to operate, large-area film formation can be performed and the thickness of the film is accurately controllable so that the number of the layers of the LB quantum dot film can be controlled. The LB quantum dot film acts as the quantum dot light-emitting layer of an LED device so that the performance of the LED device is stable, and the performance of the LED device can be further regulated and controlled by regulating and controlling the thickness of the LB quantum dot film.

Description

technical field [0001] The invention relates to the technical field of light-emitting diodes, in particular to an LB quantum dot thin film, a light-emitting diode and a preparation method thereof. Background technique [0002] In recent years, quantum dots, as an energy-efficient and low-cost luminescent material, can be used in a new generation of lighting and display devices, so they have recently received high attention and research in the display field. On the one hand, the preparation cost of semiconductor colloidal nanocrystals is low, easy to disperse in solution and has physical operability; on the other hand, it has excellent optical properties, including high light color purity, high luminous quantum efficiency, adjustable luminous color, and Long service life and other advantages have become a hot spot in the research and development of new LED (light-emitting diode) luminescent materials. [0003] Langmuir-Blodgett (LB) membrane technology is a membrane technolo...

Claims

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Application Information

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IPC IPC(8): H01L33/04H01L33/48H01L33/00
CPCH01L33/04H01L33/00H01L33/48
Inventor 刘政杨一行曹蔚然钱磊向超宇
Owner TCL CORPORATION
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