Light-emitting diode and laser of p-GaN/ZnO-based multi-quantum well/n-ZnO structure and preparation method
A light-emitting diode, p-gan technology, applied in lasers, phonon exciters, laser parts and other directions, to achieve the effect of improving emission efficiency, stable and reliable p-type conductivity, and high crystal quality
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0032] 1) Substrate cleaning: Put the sapphire substrate with the p-GaN layer into acetone, alcohol and deionized water in order to ultrasonically clean it for 10 min, rinse with deionized water, and blow dry with nitrogen.
[0033] 2) Substrate pretreatment: put the above-mentioned cleaned substrate into the molecular beam epitaxy system pretreatment chamber and bake for 3 hours at a temperature of 300°C; then put it into a high-vacuum growth chamber for high temperature treatment at 800°C for 30 minutes.
[0034] 3) Deposit 5 cycles of ZnO / ZnMgO multiquantum wells on the p-GaN layer by molecular beam epitaxy, and reserve the area for growing the first electrode at the same time, using pure metal Zn (purity 99.9998%) as the Zn source, pure metal Mg (99.9999% pure) as the source of Mg, pure O activated by RF 2 (purity is 99.9999%) is the O source, the substrate temperature is 650 ° C, the Zn source furnace temperature is 250 ° C, the Mg source furnace temperature is 350 ° C, t...
Embodiment 2
[0038] 1) Substrate cleaning: Put the sapphire substrate with the p-GaN layer into acetone, alcohol and deionized water in order to ultrasonically clean it for 10 min, rinse with deionized water, and blow dry with nitrogen.
[0039] 2) Substrate pretreatment: put the above-mentioned cleaned substrate into the molecular beam epitaxy system pretreatment chamber and bake for 3 hours at a temperature of 300°C; then put it into a high-vacuum growth chamber for high temperature treatment at 800°C for 30 minutes.
[0040] 3) Deposit 5 cycles of ZnO / ZnMgO multiquantum wells on the p-GaN layer by molecular beam epitaxy, and reserve the area for growing the first electrode at the same time, using pure metal Zn (purity 99.9998%) as the Zn source, pure metal Mg (99.9999% pure) as the source of Mg, pure O activated by RF 2 (purity is 99.9999%) is the O source, the substrate temperature is 700°C, the Zn source furnace temperature is 250°C, the Mg source furnace temperature is 355°C, the oxy...
Embodiment 3
[0044] 1) Substrate cleaning: Put the sapphire substrate with the p-GaN layer into acetone, alcohol and deionized water in order to ultrasonically clean it for 10 min, rinse with deionized water, and blow dry with nitrogen.
[0045] 2) Substrate pretreatment: put the above-mentioned cleaned substrate into the molecular beam epitaxy system pretreatment chamber and bake for 3 hours at a temperature of 300°C; then put it into a high-vacuum growth chamber for high temperature treatment at 800°C for 30 minutes.
[0046] 3) Using molecular beam epitaxy to deposit 8 cycles of ZnO / ZnMgO multiquantum wells on the p-GaN layer, while reserving the area for growing the first electrode, using pure metal Zn (purity 99.9998%) as the Zn source, pure metal Mg (99.9999% pure) as the source of Mg, pure O activated by RF 2 (purity is 99.9999%) is the O source, the substrate temperature is 700 ° C, the Zn source furnace temperature is 250 ° C, the Mg source furnace temperature is 360 ° C, the oxyg...
PUM
Property | Measurement | Unit |
---|---|---|
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com