Novel quantum dot luminescent device

A new type of quantum dot light-emitting technology, applied in the fields of electric solid-state devices, semiconductor devices, semiconductor/solid-state device manufacturing, etc., can solve the problems of unbalanced electron and hole injection, low external quantum efficiency, etc., to improve the luminescence performance, repeatability Good performance, repeatable stability

Active Publication Date: 2016-01-20
HENAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the external quantum efficiency of blue-green QD-LEDs is still relatively low, o

Method used

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  • Novel quantum dot luminescent device

Examples

Experimental program
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Effect test

Embodiment 1

[0032] A new type of quantum dot light-emitting device, including ITO anode, hole injection layer (HILs), hole transport layer (HTLs), quantum dot light-emitting layer (QDs), electron transport layer (ETLs) and Al cathode, which also includes an insulating layer, the insulating layer is arranged between the hole transport layer and the quantum dot light-emitting layer. Its structural energy level diagram is shown in figure 1 .. Specifically obtained through the following steps:

[0033] Use the ITO glass of the cleaned pattern painting with an ultraviolet-ozone treatment machine (UV / O 3 ) for 15 minutes, and then spin-coat a 40nm PEDOT:PSS film on an ITO glass substrate at a speed of 3000 rpm as a hole injection layer by spin coating. The ITO glass substrate with spin-coated PEDOT:PSS thin film was dried in air at 150° C. for 15 min, then transferred to a glove box and spin-coated with a concentration of 10 mg / mL TFB chlorobenzene solution 30 nm as a hole transport layer, a...

Embodiment 2

[0036]A new type of quantum dot light-emitting device, including ITO anode, hole injection layer (HILs), hole transport layer (HTLs), quantum dot light-emitting layer (QDs), electron transport layer (ETLs) and Al cathode, which also includes an insulating layer, the insulating layer is arranged between the hole transport layer and the quantum dot light-emitting layer. Specifically obtained through the following steps:

[0037] Use the ITO glass of the cleaned pattern painting with an ultraviolet-ozone treatment machine (UV / O 3 ) for 15 minutes, and then spin-coat a 40nm PEDOT:PSS film on an ITO glass substrate at a speed of 3000 rpm as a hole injection layer by spin coating. The ITO glass substrate with spin-coated PEDOT:PSS thin film was dried in air at 150° C. for 15 min, then transferred to a glove box and spin-coated with a concentration of 10 mg / mL TFB chlorobenzene solution 30 nm as a hole transport layer, and Dry in a glove box at 150°C for 30 min. Continue to spin-c...

Embodiment 3

[0040] A new type of quantum dot light-emitting device, including ITO anode, hole injection layer (HILs), hole transport layer (HTLs), quantum dot light-emitting layer (QDs), electron transport layer (ETLs) and Al cathode, which also includes an insulating layer, the insulating layer is arranged between the hole transport layer and the quantum dot light-emitting layer. Specifically obtained through the following steps:

[0041] Use the ITO glass of the cleaned pattern painting with an ultraviolet-ozone treatment machine (UV / O 3 ) for 15 minutes, and then spin-coat a 40nm PEDOT:PSS film on an ITO glass substrate at a speed of 3000 rpm as a hole injection layer by spin coating. The ITO glass substrate with spin-coated PEDOT:PSS thin film was dried in air at 150° C. for 15 min, then transferred to a glove box and spin-coated with a concentration of 10 mg / mL TFB chlorobenzene solution 30 nm as a hole transport layer, and Dry in a glove box at 150°C for 30 min. Continue to spin-...

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Abstract

The invention belongs to the field of electroluminescent devices and particularly relates to a novel quantum dot luminescent device. The novel quantum dot luminescent device comprises an ITO anode, a hole injection layer, a hole transmission layer, a quantum dot luminescent layer, an electron transmission layer, an Al cathode and an insulating layer, wherein the insulating layer is arranged between the hole transmission layer and the quantum dot luminescent layer. The material of the insulating layer can be one or more of polymethyl methacrylate, calcium oxide, aluminum oxide, silicon oxide or gallium oxide and the like. Through the arrangement of the insulating layer, on one hand, injection of holes and electrons is effectively balanced; and on the other hand, the electric neutrality of quantum dots is ensured, so that the luminescence property of a blue-green quantum dot light-emitting diode is improved.

Description

technical field [0001] The invention belongs to the technical field of electroluminescence devices, and in particular relates to a novel quantum dot light-emitting device. Background technique [0002] Due to their unique optical properties (such as high quantum yield, good monochromaticity, adjustable color with size, strong photochemical stability and large-scale preparation by solution method, etc.), semiconductor fluorescent quantum dots have become a new generation of flat panel display and solid state. The most potential material in the field of lighting. Quantum dot-based light-emitting diodes (QD-LEDs) are receiving increasing attention. According to previous literature reports, the device efficiency of QD-LEDs largely depends on the balance of electron and hole injection. In recent years, QD-LEDs have significantly improved both in terms of luminous efficiency and service life, especially the external quantum efficiency of red QD-LEDs has reached 20.5%. However, ...

Claims

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Application Information

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IPC IPC(8): H01L51/50
CPCH10K50/15
Inventor 申怀彬吝青丽李林松
Owner HENAN UNIVERSITY
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