130 results about "Molecular beam epitaxy" patented technology

The invention provides a preparation method of a barrier type antimonide infrared detector. The preparation method comprises the following steps: selecting a gallium antimonide substrate; a gallium antimonide buffer layer, an indium arsenide heavily-doped layer, a class II superlattice absorption layer and an aluminum-arsenic-antimony barrier layer are sequentially grown on the substrate in an epitaxial mode through a molecular beam epitaxy method; mechanically stripping the hexagonal boron nitride two-dimensional material, and transferring the stripped hexagonal boron nitride to the aluminum-arsenic-antimony barrier layer to form a Van der Waals heterojunction and composite barrier layer structure; depositing electrodes by using an ultraviolet lithography technology and a thermal evaporation mode to form one electrode arranged on the gallium antimonide buffer layer and the other electrode arranged on the boron nitride; a large-numerical-aperture micro-lens array is processed on a substrate, and the micro-lens array is composed of gallium antimonide cylinders with a phase modulation function; therefore, the antimonide medium-wave infrared detector with the composite barrier layer can be formed, the quantum efficiency is improved, the order of magnitude of dark current is reduced, and room-temperature medium-wave infrared detection can be realized.

The invention relates to the technical field of thermal field modeling and control, and particularly provides a molecular beam epitaxy substrate temperature field control method and system based on artificial intelligence, and the method comprises the following steps: obtaining the all-region temperature data of the surface of a substrate, and the heating power and environment parameters of each region of a heating cavity; inputting the heating power and the environmental parameters into the temperature field model, and outputting a temperature distribution matrix and temperature gradient data of the surface of the substrate; predicting temperature prediction data according to the temperature distribution matrix, the heating power and the sequence data of the environmental parameters in the historical time period; and inputting a state vector formed by the temperature distribution matrix, the temperature gradient data, the heating power data and the temperature prediction data into a deep reinforcement learning model, and then outputting the heating power adjusting quantity of each area to control a temperature field. According to the invention, the problems of insufficient prediction precision and real-time performance of the substrate temperature in the prior art are solved, the influence of environmental factors and heating power on the substrate temperature is considered, and the temperature field control capability is improved.

The invention discloses a molecular dynamics simulation method, device and equipment oriented to a molecular beam epitaxy process, and relates to the technical field of deposition in microelectronic manufacturing, and the method comprises the steps: analyzing a transition state path, and constructing an initialized data set; training an initial neural evolution potential function based on the initialized data set, performing a small-scale extrapolation experiment, establishing an evaluation function, screening a differentiation configuration, and executing DFT precision verification to form an enhanced training set; after multi-round iteration, a final potential function is output until a convergence condition is met; large-scale molecular dynamics simulation is carried out, different data sets are constructed, a potential function is trained after feature fusion and cross validation, deduction is carried out, the deposition rate is counted, and the reaction deposition selection ratio is estimated. According to the method, the dynamic evolution rule of the heterogeneous interface defect can be accurately analyzed, the real technological process problem is flexibly locked, and microsecond-level real-time closed-loop accurate control of the atomic layer growth rate is realized.

The utility model relates to a shutter device and molecular beam epitaxy equipment. Comprising a baffle plate configured to swing between a first position and a second position; when the baffle plate is in the first position, a beam injection track between the source furnace and the film growth area is blocked by the baffle plate, the baffle plate and the beam injection track are obliquely intersected, and a free falling body track formed at any position on the baffle plate is outside the source furnace; when the baffle is in the second position, the beam injection track between the source furnace and the thin film growth area does not intersect with the baffle, and the baffle is located below the source furnace; the first end of the support is connected with the baffle, and the second end extends away from the baffle; the bracket can swing to drive the baffle to swing between a first position and a second position; the power assembly is configured to drive the support to swing, and the power assembly is connected with the second end of the support. According to the technical scheme, blockage of the injection orifice of the source furnace can be reduced, and the film growth quality can be improved.

The application relates to a ferroelectric monolayer vanadium trichloride film and a preparation method thereof. The method comprises the following steps: evaporating and depositing VCl3 powder on the surface of a NbSe2 substrate under an ultrahigh vacuum atmosphere, and performing annealing treatment, so that the ferroelectric monolayer vanadium trichloride film is obtained. The sample preparation strategy of molecular beam epitaxy under an ultrahigh vacuum environment is used, high-purity VCl3 powder is evaporated and deposited on a NbSe2 substrate, an atomically flat monolayer VCl3 sample is obtained through annealing treatment, in-situ scanning tunneling microscope technology and scanning tunneling spectrum technology are combined, and it is determined that the monolayer VCl3 is a semiconductor material with ferroelectricity. The method provides a new method and idea for introducing ferroelectricity in the family of transition metal trichlorides, has high application potential and scientific research value, meanwhile, the successful introduction of ferroelectricity in the system also provides a new platform for carrying out multi-state regulation and research.

This invention belongs to the field of optical functional thin film materials, specifically relating to a silicon-oxygen-aluminum ternary composite optical coating material and its preparation method. Addressing the problem in existing technologies of achieving high transmittance, high hardness, and corrosion resistance synergistically within a single ternary material system, this invention utilizes a single-crystal thin film with a completely ordered single-phase structure epitaxially grown on a MgAl2O4 spinel single-crystal substrate, co-doped with transition metal ions and protons. Employing a combined laser molecular beam epitaxy and low-temperature proton implantation technique, alternatingly ablates the silicon target, aluminum target, and doped target, and simultaneously irradiating with a low-energy hydrogen ion beam under ultra-high vacuum, atomic-level epitaxial growth and in-situ proton embedding are achieved, resulting in a unified high transmittance, high hardness, and corrosion resistance.

The application relates to the field of surface-enhanced Raman scattering, and specifically provides a three-dimensional SnSe2 surface-enhanced Raman scattering substrate and a preparation method thereof. The three-dimensional SnSe2 surface-enhanced Raman scattering substrate comprises a filter layer, a plurality of filter holes are arranged on the filter layer, a SnSe2 nanostructure layer is fixedly arranged on the upper side of the filter layer, the SnSe2 nanostructure layer is composed of SnSe2 nanostructures, the SnSe2 nanostructure is SnSe2 nanoflower, the SnSe2 nanoflower covers the filter layer, and the SnSe2 nanoflower blocks the filter holes on the filter layer. No vertical gap exists in the SnSe2 nanoflower structure, which makes the local effect of the SnSe2 nanoflower on a light field better, so that the Raman signal enhancement factor is improved. The preparation method of the three-dimensional SnSe2 surface-enhanced Raman scattering substrate comprises the following steps: S1, preparing SnSe2 nanoflower; S2, preparing an aqueous solution of the SnSe2 nanoflower; and S3, performing suction filtration to obtain the SnSe2 surface-enhanced Raman scattering substrate. The preparation method does not use a molecular beam epitaxy method, and the cost is low.

The invention relates to the field of semiconductor material manufacturing, in particular to a molecular beam epitaxy heterogeneous base HgCdTe material and a preparation method thereof. In order to overcome the double defects of high dislocation density and out-of-control Se atom diffusion in the existing heterogeneous-base HgCdTe molecular beam epitaxy technology, a dislocation reaction is triggered by designing an HgSe superlattice structure, and an As-doped HgTe diffusion blocking layer is further constructed; finally, the molecular beam epitaxy heterogeneous base HgCdTe material can meet the core requirements of low dislocation density, zero Se diffusion and high stability of a high working temperature (greater than or equal to 150K) infrared detector. The problems that due to the fact that the dislocation density of a molecular beam epitaxy heterogeneous base HgCdTe is high, the dark current of a device is sharply increased, the blind pixel rate is increased, and Se diffusion of an epitaxial structure containing Se is out of control are solved.

The application relates to a molecular beam epitaxy preparation method of epitaxial high-quality AlN on a Si substrate and an AlN epitaxial wafer, and the preparation method comprises the following steps: S1, obtaining a substrate, performing infrared lamp baking on the substrate, performing high-temperature deoxidization after heating pretreatment, and obtaining a pretreated substrate; S2, adopting a molecular beam epitaxy method to pre-deposit an Al layer on the pretreated substrate; S3, adopting the molecular beam epitaxy method to grow an AlN epitaxial layer on the pre-deposited Al layer; and S4, continuously introducing a nitrogen plasma post-treatment, and cooling to a wafer transfer temperature to obtain an epitaxial wafer. In the technical scheme, the pre-deposited Al layer can inhibit the reaction between the substrate and N in the AlN layer, the formation of amorphous particles is avoided, the AlN morphology is improved, meanwhile, the pre-deposited Al layer not only relieves the lattice mismatch problem between the substrate material and the AlN, but also improves the Al atom migration rate for the growth of the subsequent AlN layer, promotes two-dimensional growth, and thus the AlN crystal quality is improved.

The application provides a strain compensation type quantum well material for an EEL (edge emitting laser) and a preparation method thereof, and belongs to the technical field of semiconductor optoelectronic devices. The material comprises a substrate, a lower limiting layer, a lower waveguide layer, a multi-quantum well active region, a strain compensation shell layer, an upper waveguide layer and an upper limiting layer. The multi-quantum well active region is formed by alternately growing InGaAs quantum well layers with compressive strain and AlGaInP barrier layers with tensile strain, so that strain self-compensation is achieved; the strain compensation shell layer adopts an Al component gradient change structure, so that strain accumulation and quantum confinement Stark effect are further inhibited. The preparation method adopts processes such as molecular beam epitaxy, temperature oscillation, dynamic beam current modulation and multi-layer in-situ annealing, so that the material quality and interface flatness are improved. The application effectively improves the temperature stability, output power and service life of the device, and is suitable for optoelectronic devices such as 905 nm band lasers.

The application discloses a kind of haptic temperature synergic sensor comprising flexible substrate material and preparation method thereof.Sensor includes flexible substrate, arrayed haptic sensing unit and multilayer heterostructure temperature-sensitive layer, multilayer heterostructure temperature-sensitive layer is alternately stacked by pressure-sensitive material layer, thermosensitive material layer and conductive material layer and so on Heterogeneous materials can realize the synergic perception of temperature and pressure.By reasonably designing the material properties and interface structure of each layer, the response performance of the sensor to multiple physical quantities is improved.

The invention belongs to the technical field of molecular beam epitaxy equipment, in particular to a high-temperature source furnace for molecular beam epitaxy equipment, which is characterized in that a heating assembly component is mounted on one side of a supporting seat, and the other side of the supporting seat is connected with an electrode flange seat; the crucible is installed in the heating assembly component, one end of the adjusting tungsten rod penetrates through the heating assembly component to abut against the crucible, and the other end of the adjusting tungsten rod abuts against the adjusting eccentric shaft rotationally installed on the supporting base; a plurality of tungsten heating wires are evenly arranged on the periphery of the crucible, the two molybdenum electrode rings serve as a positive electrode and a negative electrode respectively, the two molybdenum electrode rings are insulated from the supporting base and are in insulated connection with the supporting rod, and the two ends of each tungsten heating wire are connected with the two molybdenum electrode rings respectively; one end of the small flange connecting pipe and the electrode feed-through are fixedly connected with the flange seat, and the other end is fixedly connected with the thermocouple feed-through; the two molybdenum electrode rings are respectively connected with the electrode feed-through through molybdenum electrode rods, and a thermocouple connected with the thermocouple feed-through is arranged in the heating assembly component. The crucible has the advantages of high thermal stability, large crucible capacity, easiness in maintenance and the like.

The application relates to a preparation method of an epitaxial structure, the epitaxial structure and application thereof. The preparation method of the epitaxial structure comprises the following steps: providing a substrate; introducing a nitrogen source and a group III source, and epitaxially growing at least one dislocation blocking layer on the substrate by adopting a molecular beam epitaxy process; the dislocation blocking layer comprises a first growth layer and a second growth layer which are stacked in sequence, the first growth layer has a three-dimensional island-shaped morphology, the bottom surface of the second growth layer is in contact with the surface of the first growth layer which is away from the substrate, and the surface of the second growth layer which is away from the substrate has a planar structure; during the growth of the first growth layer, the stoichiometric ratio of the flow rates of the nitrogen source and the group III source is greater than 1, and during the growth of the second growth layer, the stoichiometric ratio of the flow rates of the nitrogen source and the group III source is less than 1; and a group III nitride material layer is epitaxially grown on the dislocation blocking layer by adopting the molecular beam epitaxy process. In this way, part of the dislocations can be terminated in the dislocation blocking layer, so that the dislocation density in the epitaxial structure is reduced.

The invention provides an ultra-wide-band gain spectrum epitaxial material structure of a tunable laser and application of the ultra-wide-band gain spectrum epitaxial material structure. The epitaxial material structure comprises a substrate, a lower cladding, a waveguide layer, an upper limiting layer, an upper cladding and a contact layer which are sequentially arranged from bottom to top, the waveguide layer comprises an intrinsic waveguide layer and a bismuth compound quantum dot layer embedded in the intrinsic waveguide layer, and the gain bandwidth is widened through the energy band anti-cross effect instead of suppressing radiation recombination. The epitaxial material structure grows in a molecular beam epitaxy or metal organic vapor phase epitaxy mode, and the crystal quality is optimized in combination with a rapid thermal annealing process. By regulating and controlling the number of layers of the quantum dots and the bismuth component, the ultra-wideband gain spectrum coverage from near ultraviolet to near infrared bands is realized, the gain spectrum is wide, the gain peak value of the material is relatively high, and meanwhile, the material has a low linewidth enhancement factor and high temperature stability. The epitaxial material structure can be monolithically integrated in a DFB laser array and a semiconductor optical amplifier, and a core gain medium is provided for a high-performance tunable semiconductor laser.

The invention provides a phosphorus recovery processing system and a recovery processing method thereof. During recovery processing, cooling equipment is communicated with a growth chamber of molecular beam epitaxy equipment, so that the pressure of the cooling equipment is lower than atmospheric pressure, and a phosphorus material in the growth chamber is driven into the cooling equipment through baking; isolating the growth chamber from the cooling equipment, introducing heated nitrogen into the cooling equipment, purging phosphorus-containing gas in the cooling equipment, and discharging the phosphorus-containing gas outwards; phosphorus-containing gas is conveyed to a first treatment main body of the treatment equipment and is subjected to cooling, hydrogen peroxide treatment, copper sulfate treatment, potassium permanganate treatment and inspection treatment in sequence, and finally waste liquid is discharged to a first neutralizing tank for alkaline neutralization treatment. Through the configuration, the safety and the treatment efficiency of phosphorus recovery treatment are remarkably improved.

The invention belongs to the technical field of MBE molecular beam epitaxy equipment, and particularly relates to a position adjusting mechanism for a vacuum inner crucible of a high-temperature beam source furnace. One end of a shell is hermetically connected with a source furnace cavity through a flange, and a driving screw rod is rotatably mounted in the other end of the shell; one end of the driving screw is connected with the coupler, the other end of the driving screw is in threaded connection with one end of the connecting rod in the shell, the other end of the connecting rod penetrates out of the shell and the flange and then is connected with one end of the control fork, and the other end of the control fork is located in the source furnace cavity and abuts against the source furnace crucible; a corrugated pipe is arranged in the shell, one end of the corrugated pipe is fixedly connected to the flange, the other end of the corrugated pipe is connected with a connecting rod, the connecting rod is fixedly connected with one end of a pointer screw, and the other end of the pointer screw extends out of the shell. The position of the crucible is adjusted outside vacuum, smooth operation of a valve control mechanism is guaranteed, the source furnace can be prevented from being disassembled and adjusted on site by a client, and the accurate requirement for controlling the concentricity of a driving structure in the using process of the source furnace can be effectively met.

The invention discloses a quantum computing platform with an observer dependent measurement and visualization verification system, and belongs to the technical field of quantum computing. Comprising an observer dependence measurement subsystem, a topology quantum bit processor, a cryptographic receipt generator, a geodesic path optimizer and a visual verification system. An observer depends on the measurement subsystem to realize internal collapsing to a point eigenstate eta B = 1 * 10 <-10 > and external collapsing to an expansion superposition state 1-eta B; the topological quantum bit processor is manufactured by adopting an InAs nanowire heterostructure and an Al superconductor through molecular beam epitaxy 10-11Torr, and the coherence time is gt; the time is 100 milliseconds. The cryptographic receipt generator is based on a Xilinx ZCU104 FPGA, generates a block chain compatible signature for 106 times per second, integrates 255-bit quantum states, 31-bit operation codes, 511-bit receipts and 223-bit CRYSTALS-Dillitium signatures through a VHDL architecture, and ensures that quantum operations are not tampered, traceable and verifiable.

The application belongs to the technical field of two-dimensional material preparation, and discloses a preparation method of two-dimensional tin phosphide material. In view of the problems of complex equipment, high cost and strong interface coupling existing in the preparation of two-dimensional SnP3 by using the existing molecular beam epitaxy method, the SnBi / Si (111) substrate with lamellar eutectic structure is prepared by Van der Waals extrusion, and the substrate has the functions of weak coupling interface and self-supply Sn source; the controllable epitaxial growth of two-dimensional SnP3 is realized under the condition of low-temperature chemical vapor deposition at 100 DEG C to 150 DEG C by taking black phosphorus as a phosphorus source. The application has simple process and mild conditions, and can obtain large-area and high-quality two-dimensional SnP3, and is suitable for the fields of optoelectronic devices and integrated circuits.

The application discloses an anti-interface rough scattering quantum cascade laser active region and a preparation method thereof. The application forms a topological interface state protected by chiral symmetry as a lasing upper energy level at the butt joint interface between a first superlattice region and a second superlattice region, the wave function of the topological interface state is strictly zero in the thick barrier center and the interface, thereby the non-radiation loss caused by the interface roughness scattering is inhibited from the root, and the upper energy level carrier lifetime is significantly prolonged. Based on this, the threshold current density of the quantum cascade laser is greatly reduced, and high-efficiency lasing of 10 μm wavelength can be realized at room temperature. Meanwhile, a mixed epitaxy process combining molecular beam epitaxy and metal organic chemical vapor deposition is adopted, the nanometer precision energy band design of the core active region is ensured, and the efficient growth of the thick film waveguide layer is realized, which is beneficial to the practicalization and large-scale preparation of the device.

The invention relates to the technical field of thin film thermoelectric materials, and particularly discloses a preparation method of a single crystal tin selenide thermoelectric thin film, and the preparation method specifically comprises the following steps: S1, cleaning a substrate; s2, placing a substrate; s3, vacuumizing is carried out; s4, degassing the substrate; s5, heating the evaporation source; s6, growing the thin film; s7, cooling the film; and S8, taking out the sample. The molecular beam epitaxy method is used for preparing the thin film, the selenium beam / tin beam ratio is strictly controlled, H2Se is adopted for selenium vacancy repairing in the thin film growth process, the high-quality a-axis orientation single crystal tin selenide thermoelectric thin film can be obtained, the thin film has good thermoelectric performance, and integrated packaging of chips is easy to achieve.

This invention provides a boron nitride crucible and a method for real-time monitoring of impurity release, relating to the field of boron nitride crucible technology. The boron nitride crucible of this invention includes a crucible substrate, the inner surface of which is covered with a barrier layer. An impurity trap region is formed inside the crucible substrate by doping with an impurity-capturing material. This impurity trap region is used to capture impurities diffusing from the crucible substrate. The boron nitride crucible of this invention aims to solve the problem of continuous release of inherent trace impurities during long-term use of boron nitride crucibles in molecular beam epitaxy (MBE) processes, leading to a decrease in epitaxial film purity and affecting device performance and yield. It can effectively suppress impurity diffusion, thereby improving crucible purity and epitaxial film quality.

The invention relates to the technical field of infrared detectors, in particular to a method for growing a high-quality GaSb Buffer on a GaAs substrate by molecular beam epitaxy, which adopts a gradient buffer layer to reduce the problem of lattice mismatching between the GaAs substrate and the GaSb Buffer. The high-quality GaSbBuffer can be grown on the GaAs substrate, the surface quality of the GaSbBuffer grown on the GaAs substrate and the surface quality of the GaSbBuffer grown on the GaSb substrate are compared through measurement of AFM and AOI, it is found that the surface quality of the GaSbBuffer grown on the GaAs substrate and the surface quality of the GaSbBuffer grown on the GaSb substrate are almost equivalent to the surface quality of the GaSbBuffer obtained through homoepitaxy on the GaSb substrate, and the substrate cost in production can be reduced.

The invention provides a molecular beam epitaxy device for preventing color change and slag falling of the back surface of an epitaxial wafer and application. The molecular beam epitaxy device comprises a growth chamber; a carrying table is arranged in the growth chamber; a first step and a second step are sequentially arranged on the carrying table from bottom to top; a substrate is placed on the first step, and the back surface of the substrate faces the second step; and a shielding piece is placed on the second step. By optimizing the structure of the carrying table, the carrying table is sequentially provided with the first step and the second step from bottom to top, the first step and the second step are used for placing the substrate and the shielding piece respectively, the shielding piece is placed on the back face of the substrate for blocking, enrichment of As elements on the back face of an epitaxial wafer can be effectively reduced, epitaxial structure growth is carried out through the epitaxial device, and the yield of the epitaxial structure is improved. And obtaining the epitaxial wafer without discoloration and slag falling on the back surface.

This invention relates to a molecular beam epitaxy shutter and apparatus, and pertains to the field of epitaxial growth technology. In the molecular beam epitaxy shutter of this invention, the first and second blades of the shutter plate have an included angle, such that when the shutter plate blocks the furnace opening, the molecular beam stream and thermal radiation emitted from the furnace opening intersect the shutter plate at an angle. The molecular beam stream and thermal radiation are reflected by the shutter plate and fall outside the furnace, thus avoiding the problem that existing shutter structures cannot effectively prevent source material splashing and thermal reflection to the furnace opening, affecting the stability of epitaxial growth and the coating quality.

The invention relates to a molecular beam epitaxy preparation method for epitaxy of high-quality AlN on a Si substrate and an AlN epitaxial wafer, and the preparation method comprises the steps: S1, obtaining a substrate, carrying out infrared lamp baking and heating pretreatment on the substrate, and then carrying out high-temperature deoxidation to obtain a pretreated substrate; s2, pre-paving an Al layer on the pretreated substrate by adopting a molecular beam epitaxy method; s3, growing an AlN epitaxial layer on the pre-paved Al layer by adopting a molecular beam epitaxy method; and S4, continuously introducing nitrogen plasma for post-treatment, and cooling to a wafer transfer temperature to obtain the epitaxial wafer. According to the technical scheme, the reaction between the substrate and N in the AlN layer can be inhibited through the pre-laid Al layer, the formation of amorphous particles is avoided, so that the morphology of the AlN is improved, meanwhile, the pre-laid Al layer not only relieves the lattice mismatch problem of the substrate material and the AlN, but also improves the Al atom mobility and promotes the two-dimensional growth for the subsequent growth of the AlN layer, and thus the quality of the AlN crystal is improved.

The preparation method comprises the steps that alloy raw materials are smelted, sheet throwing is carried out, heat treatment, hydrogen decrepitation, jet milling, magnetic field forming, cold isostatic pressing treatment and sintering are sequentially carried out, and a first sintered neodymium-iron-boron magnet is obtained; depositing a non-rare earth target material on one surface of the sintered neodymium-iron-boron magnet by using a molecular beam epitaxy technology; grain boundary diffusion and heat treatment; and depositing a heavy rare earth target material on the surface of the sintered magnet by using a molecular beam epitaxy technology to obtain a sintered neodymium-iron-boron magnet II, carrying out grain boundary diffusion and heat treatment, and then carrying out a tempering process to obtain the sintered neodymium-iron-boron magnet. According to the method, atomic-scale film layer control is achieved through the molecular beam epitaxy technology, the problem that a uniform thin diffusion layer is difficult to obtain through a traditional coating method is solved, diffusion materials can be efficiently utilized, the uniform diffusion depth of heavy rare earth elements in the magnet is increased, the ultrahigh-coercivity magnet is manufactured, and the industrial requirements of rare earth permanent magnet motors and the like are met.

The invention discloses an aluminum nitride substrate cleaning method. The cleaning method comprises an ectopic chemical pretreatment process and an in-situ Al auxiliary cleaning process. Wherein the ectopic chemical pretreatment comprises the following steps of: removing oil stain on the surface of the AlN substrate by using a cleaning agent, then removing hydroxide on the surface of the substrate by using an acid solution mixed solution, and finally treating by using hydrofluoric acid to expose atomic steps on the substrate. And then an in-situ Al auxiliary cleaning process is executed, specifically, the AlN substrate is heated in a high-vacuum environment through molecular beam epitaxy, aluminum steam adsorption-desorption cleaning is carried out, and a smooth atom step edge is formed on the surface of the substrate after multiple times of circulation. According to the method, oil stains, oxides, hydroxides, Si, O, C and other impurities on the surface of the aluminum nitride substrate can be effectively eliminated, so that the surface of the substrate presents atomic steps, the quality of an epitaxial crystal ingot is remarkably optimized, and the method is very suitable for cleaning treatment of the high-quality aluminum nitride substrate.

The invention discloses a method for preparing a palladium ditelluride single crystal film by using a molecular beam epitaxy method, and belongs to the technical field of nano material preparation. Comprising the following steps: ultrasonically cleaning a silicon carbide substrate, putting the silicon carbide substrate into a growth cavity, and performing annealing treatment to remove impurities adsorbed on the surface of the substrate; performing flash processing on the annealed silicon carbide substrate for multiple times in a mode of increasing and reducing current to obtain a double-layer graphene surface, and then reducing the temperature of the substrate to a growth temperature; pd and Te are placed in different evaporation sources to be heated, the atomic beam flow rate ratio of Pd to Te is adjusted by controlling the evaporation temperature during growth, Pd and Te grow on a substrate in a co-deposition mode, and baffles of the Pd source and the Te source are opened at the same time; and after the growth is completed, closing the Pd source baffle plate and the Te source baffle plate, and annealing the substrate. According to the method, the preparation conditions of the thin film can be accurately regulated and controlled, so that the controllable growth of the thin film material is achieved.

The invention belongs to the technical field of semiconductor material preparation, and relates to a multi-element oxide film and a preparation method and application thereof. The technical problem that in the prior art, large-area uniform preparation of a multi-element oxide film is difficult is solved. The invention provides a preparation method of a multi-element oxide thin film, which adopts molecular beam epitaxy co-evaporation preparation and comprises the following steps: placing a substrate in a molecular beam epitaxy co-evaporation preparation cavity, and vacuumizing the cavity; performing YSZ buffer layer deposition and CeO2 buffer layer deposition on the substrate in the cavity from bottom to top in sequence, and controlling automatic evaporation of electron beams through a film thickness gauge to obtain a substrate containing a buffer layer; yttrium, copper and barium fluoride are co-evaporated on a substrate containing a buffer layer to perform YBCO film deposition, a Y evaporation source, a Cu evaporation source and a Ba evaporation source are controlled by a film thickness gauge to perform co-evaporation, and a multi-element oxide film with large area and good uniformity is obtained. The invention further provides the multi-element oxide thin film and application thereof.