230 results about "Molecular beam epitaxy" patented technology

The invention provides a preparation method of a barrier type antimonide infrared detector. The preparation method comprises the following steps: selecting a gallium antimonide substrate; a gallium antimonide buffer layer, an indium arsenide heavily-doped layer, a class II superlattice absorption layer and an aluminum-arsenic-antimony barrier layer are sequentially grown on the substrate in an epitaxial mode through a molecular beam epitaxy method; mechanically stripping the hexagonal boron nitride two-dimensional material, and transferring the stripped hexagonal boron nitride to the aluminum-arsenic-antimony barrier layer to form a Van der Waals heterojunction and composite barrier layer structure; depositing electrodes by using an ultraviolet lithography technology and a thermal evaporation mode to form one electrode arranged on the gallium antimonide buffer layer and the other electrode arranged on the boron nitride; a large-numerical-aperture micro-lens array is processed on a substrate, and the micro-lens array is composed of gallium antimonide cylinders with a phase modulation function; therefore, the antimonide medium-wave infrared detector with the composite barrier layer can be formed, the quantum efficiency is improved, the order of magnitude of dark current is reduced, and room-temperature medium-wave infrared detection can be realized.

The invention relates to the technical field of thermal field modeling and control, and particularly provides a molecular beam epitaxy substrate temperature field control method and system based on artificial intelligence, and the method comprises the following steps: obtaining the all-region temperature data of the surface of a substrate, and the heating power and environment parameters of each region of a heating cavity; inputting the heating power and the environmental parameters into the temperature field model, and outputting a temperature distribution matrix and temperature gradient data of the surface of the substrate; predicting temperature prediction data according to the temperature distribution matrix, the heating power and the sequence data of the environmental parameters in the historical time period; and inputting a state vector formed by the temperature distribution matrix, the temperature gradient data, the heating power data and the temperature prediction data into a deep reinforcement learning model, and then outputting the heating power adjusting quantity of each area to control a temperature field. According to the invention, the problems of insufficient prediction precision and real-time performance of the substrate temperature in the prior art are solved, the influence of environmental factors and heating power on the substrate temperature is considered, and the temperature field control capability is improved.

The invention discloses an atom manipulation construction method of an artificial quantum structure on a two-dimensional layered material substrate, which comprises the following steps of: under an ultrahigh vacuum condition, evaporating and depositing noble metal atoms and non-metal atoms on the surface of a two-dimensional layered material by a molecular beam epitaxy method, and applying a voltage pulse through a tip of a scanning tunneling microscope to construct the artificial quantum structure on the two-dimensional layered material substrate. The method comprises the following steps: accurately lifting and placing monodisperse noble metal atoms, applying a voltage pulse through a tip of a scanning tunneling microscope, accurately placing a single non-metal atom near the noble metal atoms, accurately lifting and placing the single noble metal atom and the non-metal atom for multiple times, and carrying out N-type and P-type doping. And construction of an atomic-scale precise artificial quantum structure is realized. According to the method, accurate positioning, lifting, carrying, placing and other operations of the monatomic on the surface of the two-dimensional layered material are carried out, the problems of controllable control and structure construction of the monatomic on the surface of the two-dimensional layered material are solved, preparation of the diatomic PN junction is achieved, and a feasible scheme is provided for accurate design of quantum devices with atomic scales.

The invention relates to a preparation method of an epitaxial structure, the epitaxial structure and application of the epitaxial structure. The preparation method of the epitaxial structure comprises the following steps: providing a substrate; introducing a nitrogen source and a group III source, and epitaxially growing at least one dislocation barrier layer on the substrate by adopting a molecular beam epitaxy process; the dislocation barrier layer comprises a first growth layer and a second growth layer which are stacked in sequence, the first growth layer has a three-dimensional island-shaped morphology, the bottom surface of the second growth layer is in contact with the surface, away from the substrate direction, of the first growth layer, and the surface, away from the substrate direction, of the second growth layer is of a plane structure; in the growth process of the first growth layer, the stoichiometric ratio of the flow of the nitrogen source to the flow of the III-family source is larger than 1, and in the growth process of the second growth layer, the stoichiometric ratio of the flow of the nitrogen source to the flow of the III-family source is smaller than 1; and epitaxially growing a group III nitride material layer on the dislocation barrier layer by adopting a molecular beam epitaxy process. In this way, part of dislocation can be terminated in the dislocation barrier layer, so that the dislocation density in the epitaxial structure is reduced.

The invention discloses a molecular dynamics simulation method, device and equipment oriented to a molecular beam epitaxy process, and relates to the technical field of deposition in microelectronic manufacturing, and the method comprises the steps: analyzing a transition state path, and constructing an initialized data set; training an initial neural evolution potential function based on the initialized data set, performing a small-scale extrapolation experiment, establishing an evaluation function, screening a differentiation configuration, and executing DFT precision verification to form an enhanced training set; after multi-round iteration, a final potential function is output until a convergence condition is met; large-scale molecular dynamics simulation is carried out, different data sets are constructed, a potential function is trained after feature fusion and cross validation, deduction is carried out, the deposition rate is counted, and the reaction deposition selection ratio is estimated. According to the method, the dynamic evolution rule of the heterogeneous interface defect can be accurately analyzed, the real technological process problem is flexibly locked, and microsecond-level real-time closed-loop accurate control of the atomic layer growth rate is realized.

The utility model relates to a shutter device and molecular beam epitaxy equipment. Comprising a baffle plate configured to swing between a first position and a second position; when the baffle plate is in the first position, a beam injection track between the source furnace and the film growth area is blocked by the baffle plate, the baffle plate and the beam injection track are obliquely intersected, and a free falling body track formed at any position on the baffle plate is outside the source furnace; when the baffle is in the second position, the beam injection track between the source furnace and the thin film growth area does not intersect with the baffle, and the baffle is located below the source furnace; the first end of the support is connected with the baffle, and the second end extends away from the baffle; the bracket can swing to drive the baffle to swing between a first position and a second position; the power assembly is configured to drive the support to swing, and the power assembly is connected with the second end of the support. According to the technical scheme, blockage of the injection orifice of the source furnace can be reduced, and the film growth quality can be improved.

The invention discloses a method for judging the source material allowance of an MBE source furnace based on the surface of an epitaxial wafer, and the method comprises the steps: selecting proper points on the surface of the epitaxial wafer, measuring the cycle, the half-peak width and the mismatch value of the surface of the epitaxial wafer through XRD, and respectively calculating the cycle, the half-peak width and the mismatch value of the epitaxial wafer through standard deviation; whether the source materials of the source furnace are insufficient or not is judged by designing a control group, an experience control group and an evidence group and comparing standard deviation ratios of the groups, and the allowance of the source materials of the molecular beam epitaxy source furnace is judged more rigorously. The method allows the sufficiency of the source material of the molecular beam epitaxy source furnace to be monitored in real time, and stable epitaxial wafer growth is ensured through XRD and data analysis. Compared with a traditional statistical method, the method is more accurate and scientific, resource waste is avoided, and the quality of the epitaxial material is improved.

The invention provides a low-specific-on-resistivity GaN HEMT device and a preparation method thereof. The preparation method comprises the following steps: obtaining a thick-barrier GaN epitaxial structure; manufacturing a low-loss etched hard mask medium on a thick-barrier GaN epitaxial structure of the GaN HEMT device with low specific on-resistivity to form a passivation medium film; defining a gate region of the medium by utilizing a photoetching process, and defining a hard mask medium pattern by adopting a medium etching process; carrying out barrier layer groove etching by adopting a GaN low-loss etching process; etching is accurately stopped; adopting a molecular beam epitaxy process to perform secondary epitaxy on a p-GaN layer in a selected area so as to realize complete depletion of two-dimensional electron gas in a grid area; removing the polycrystalline GaN on the hard mask medium; and after horizontal GaN HEMT tape-out, metal deposition of a source electrode, a drain electrode and a grid electrode of the GaN HEMT is carried out. According to the method, a thick barrier layer structure is adopted, the specific on-resistivity limitation of the device is reduced, the device has low specific on-resistivity, the reliability of the grid electrode is improved, and the stability of the device is improved.

The invention discloses a multi-layer thin film structure capable of achieving vertical exchange bias and free of external field auxiliary total current overturning and a preparation method and application thereof, the multi-layer thin film structure sequentially comprises a heavy metal base layer, an atomic level intercalation layer, a ferromagnetic layer and an antiferromagnetic layer from bottom to top, and the multi-layer thin film structure is prepared through molecular beam epitaxy. According to the invention, anisotropic epitaxial strain is introduced into the antiferromagnetic layer, so that a remarkable vertical exchange bias effect at room temperature is realized. Meanwhile, a global uncompensated magnetic moment is generated in the anisotropic epitaxial strain induction antiferromagnetic layer, an energy barrier of vertical exchange bias flipping is reduced, current-driven exchange bias flipping without an external field is further realized through a spin-orbit moment effect, the dependence on an external magnetic field in the prior art is overcome, and the performance of the device is improved. And the integration and the application potential of the spinning electronic device are obviously improved. The technology lays a foundation for design and development of efficient and high-density magnetic storage and logic devices.

The invention discloses a tactile and temperature cooperative sensor containing a flexible substrate material and a preparation method thereof. The sensor comprises a flexible substrate, an array tactile sensing unit and a multi-layer heterostructure temperature-sensitive layer, the multi-layer heterostructure temperature-sensitive layer is formed by alternately stacking heterogeneous materials such as a pressure-sensitive material layer, a heat-sensitive material layer and a conductive material layer, and collaborative sensing of temperature and pressure can be achieved. The response performance of the sensor to various physical quantities is improved by reasonably designing the material characteristics and the interface structure of each layer. Meanwhile, the invention also discloses a corresponding preparation process, which adopts micro-nano processing technologies such as molecular beam epitaxy, chemical vapor deposition and the like to ensure the accurate construction of the multi-layer structure. The method has a wide application prospect in the fields of robot tactile perception, intelligent wearable equipment and the like.

The invention belongs to the technical field of semiconductor materials and devices, and discloses a low-temperature thermal evaporation deposition tellurium / germanium heterojunction photoelectric detector and a preparation method thereof. The photoelectric detector comprises a germanium substrate, a tellurium thin film, a metal top electrode and a metal bottom electrode, the tellurium thin film is a polycrystalline tellurium film layer containing a micron-sized large domain, the surface roughness is lower than 1nm, and the tellurium thin film is in close contact with the germanium substrate to form a heterojunction; the metal top electrode is a platinum / gold laminated electrode, and the metal bottom electrode is an indium gallium alloy / copper foil electrode. The tellurium thin film with large crystal domain and low roughness grows on the germanium substrate through a-low temperature (-80 DEG C to-160 DEG C) thermal evaporation deposition process, and the electrode is prepared by combining a micro-nano processing technology. Compared with traditional molecular beam epitaxy, pulse laser deposition and other methods, the method is low in process cost and compatible with the integrated circuit technology, and the obtained heterojunction photoelectric detector has the excellent rectification characteristic and infrared light response and is suitable for large-scale preparation and practical application.

This application relates to the technical field of heating tooling, and specifically relates to a heating wire winding tooling and winding method for a molecular beam epitaxy source furnace. The heating wire winding tooling includes: a fixed column, a first fixed plate, a second fixed plate, a first rotating ring, and a second rotating ring; the first fixed plate and the second fixed plate are parallel to each other and are respectively detachably connected to both ends of the fixed column. The circumferential surfaces of the first fixed plate and the second fixed plate are both provided with a plurality of positioning grooves arranged at intervals in a circumferential manner, and each positioning groove penetrates through both side surfaces of the first fixed plate or the second fixed plate in the thickness direction; the first rotating ring and the second rotating ring are respectively rotatably and detachably arranged on the circumferential surfaces of the first fixed plate and the second fixed plate. The first rotating ring and the second rotating ring are both provided with an opening that penetrates the inner and outer circumferential surfaces of the first rotating ring or the second rotating ring, and the size of the opening is adapted to the positioning groove; reduce the probability of the heating wire generating plastic deformation and effectively ensure the uniform distribution of the temperature field of the molecular beam epitaxy source furnace.

The invention discloses a two-dimensional antimony oxide film and a preparation method and application thereof, and the preparation method comprises the following steps: providing a growth substrate and an evaporation source, and placing the growth substrate and the evaporation source in a growth chamber of molecular beam epitaxy equipment; and heating and evaporating the evaporation source, and preparing two-dimensional antimony oxide films with different layers on the growth substrate by utilizing a molecular beam epitaxy process by controlling the temperature of the growth substrate, the temperature of the evaporation source and the growth time. The preparation method disclosed by the invention is simple in process flow, strong in controllability, higher in repeatability and easier to industrially apply.

A method of incorporating a control structure within a VCSEL device cavity using a multiphase growth sequence includes forming a first mirror over a substrate, forming an active region over the first mirror, forming a spacer on a surface of the active region, forming a control structure on a surface of the spacer, and forming a second mirror over the control structure. The active region and the spacer are formed using a molecular beam epitaxy (MBE) process during an MBE phase of the multiphase growth sequence. The second mirror is formed using a metal-organic chemical vapor deposition (MOCVD) process during an MOCVD phase of the multiphase growth sequence. The control structure is formed using a chemical etching process during a transition period between the MBE phase and the MOCVD phase of the multiphase growth sequence.

The invention belongs to the technical field of preparation means of functional materials, and particularly relates to a CrSb single crystal film and a preparation method for preparing a staggered magnetic CrSb single crystal film through molecular beam epitaxy. The CrSb single crystal thin film sequentially comprises a substrate SiC / a buffer layer CrTe2 / CrSb single crystal thin film from bottom to top, and when the crystal orientation of the CrSb single crystal thin film is (0001), the CrSb single crystal thin film has six-degree symmetry. A Cr source and an Sb source are placed in different evaporation sources respectively, and evaporated Cr and Sb atoms are deposited on the surface of the SiC (111) substrate subjected to surface treatment in an ultrahigh vacuum environment. The deposition rate of Cr atoms is # imgabs0 # / min; the deposition rate ratio of Cr to Sb atoms is 1: 12; and the surface temperature of the SiC (111) substrate is 370 DEG C to 400 DEG C. According to the method, the staggered magnetic CrSb single crystal film is controllably synthesized by controlling the deposition rate of raw materials and the surface temperature of a substrate on the basis of cooperative control among the processes; the staggered magnetic CrSb single crystal film with the hexagonal crystal structure prepared by the method has an atomic-scale flat surface and excellent crystal orderliness, can meet the performance requirements of spintronics device preparation, and is suitable for subsequent scientific research.

The application relates to a ferroelectric monolayer vanadium trichloride film and a preparation method thereof. The method comprises the following steps: evaporating and depositing VCl3 powder on the surface of a NbSe2 substrate under an ultrahigh vacuum atmosphere, and performing annealing treatment, so that the ferroelectric monolayer vanadium trichloride film is obtained. The sample preparation strategy of molecular beam epitaxy under an ultrahigh vacuum environment is used, high-purity VCl3 powder is evaporated and deposited on a NbSe2 substrate, an atomically flat monolayer VCl3 sample is obtained through annealing treatment, in-situ scanning tunneling microscope technology and scanning tunneling spectrum technology are combined, and it is determined that the monolayer VCl3 is a semiconductor material with ferroelectricity. The method provides a new method and idea for introducing ferroelectricity in the family of transition metal trichlorides, has high application potential and scientific research value, meanwhile, the successful introduction of ferroelectricity in the system also provides a new platform for carrying out multi-state regulation and research.

This invention belongs to the field of optical functional thin film materials, specifically relating to a silicon-oxygen-aluminum ternary composite optical coating material and its preparation method. Addressing the problem in existing technologies of achieving high transmittance, high hardness, and corrosion resistance synergistically within a single ternary material system, this invention utilizes a single-crystal thin film with a completely ordered single-phase structure epitaxially grown on a MgAl2O4 spinel single-crystal substrate, co-doped with transition metal ions and protons. Employing a combined laser molecular beam epitaxy and low-temperature proton implantation technique, alternatingly ablates the silicon target, aluminum target, and doped target, and simultaneously irradiating with a low-energy hydrogen ion beam under ultra-high vacuum, atomic-level epitaxial growth and in-situ proton embedding are achieved, resulting in a unified high transmittance, high hardness, and corrosion resistance.

The application relates to the field of surface-enhanced Raman scattering, and specifically provides a three-dimensional SnSe2 surface-enhanced Raman scattering substrate and a preparation method thereof. The three-dimensional SnSe2 surface-enhanced Raman scattering substrate comprises a filter layer, a plurality of filter holes are arranged on the filter layer, a SnSe2 nanostructure layer is fixedly arranged on the upper side of the filter layer, the SnSe2 nanostructure layer is composed of SnSe2 nanostructures, the SnSe2 nanostructure is SnSe2 nanoflower, the SnSe2 nanoflower covers the filter layer, and the SnSe2 nanoflower blocks the filter holes on the filter layer. No vertical gap exists in the SnSe2 nanoflower structure, which makes the local effect of the SnSe2 nanoflower on a light field better, so that the Raman signal enhancement factor is improved. The preparation method of the three-dimensional SnSe2 surface-enhanced Raman scattering substrate comprises the following steps: S1, preparing SnSe2 nanoflower; S2, preparing an aqueous solution of the SnSe2 nanoflower; and S3, performing suction filtration to obtain the SnSe2 surface-enhanced Raman scattering substrate. The preparation method does not use a molecular beam epitaxy method, and the cost is low.

The invention relates to the field of semiconductor material manufacturing, in particular to a molecular beam epitaxy heterogeneous base HgCdTe material and a preparation method thereof. In order to overcome the double defects of high dislocation density and out-of-control Se atom diffusion in the existing heterogeneous-base HgCdTe molecular beam epitaxy technology, a dislocation reaction is triggered by designing an HgSe superlattice structure, and an As-doped HgTe diffusion blocking layer is further constructed; finally, the molecular beam epitaxy heterogeneous base HgCdTe material can meet the core requirements of low dislocation density, zero Se diffusion and high stability of a high working temperature (greater than or equal to 150K) infrared detector. The problems that due to the fact that the dislocation density of a molecular beam epitaxy heterogeneous base HgCdTe is high, the dark current of a device is sharply increased, the blind pixel rate is increased, and Se diffusion of an epitaxial structure containing Se is out of control are solved.

The invention discloses a vacuum packaging method of an MEMS device and the MEMS device, relates to the field of semiconductor packaging, and aims to solve the problem that the vacuum degree is low when the device is packaged in a wafer cap through a bonding material. The packaging method comprises the following steps: providing a substrate, an MEMS structure and a silicon cap, wherein the silicon cap is provided with a first surface and a second surface which are opposite to each other; a groove is machined in the second face, close to the substrate, of the silicon cap, a plurality of through holes penetrating through the first face and the second face are formed in the silicon cap, and the through holes are communicated with the groove; connecting the MEMS structure to the substrate through the first bonding layer; connecting the second surface of the silicon cap to the substrate through a second bonding layer, so that an accommodating cavity for accommodating the MEMS structure is defined between the groove and the substrate; placing the substrate, the MEMS structure and the silicon cap in a vacuum environment suitable for a molecular beam epitaxy process; and carrying out a molecular beam epitaxy process in the through hole of the silicon cap, so that the epitaxial material epitaxially extends in the through hole along the direction from the first surface to the second surface and is continuously filled to block the through hole, thereby realizing high-vacuum packaging of the device.

The application relates to a molecular beam epitaxy preparation method of epitaxial high-quality AlN on a Si substrate and an AlN epitaxial wafer, and the preparation method comprises the following steps: S1, obtaining a substrate, performing infrared lamp baking on the substrate, performing high-temperature deoxidization after heating pretreatment, and obtaining a pretreated substrate; S2, adopting a molecular beam epitaxy method to pre-deposit an Al layer on the pretreated substrate; S3, adopting the molecular beam epitaxy method to grow an AlN epitaxial layer on the pre-deposited Al layer; and S4, continuously introducing a nitrogen plasma post-treatment, and cooling to a wafer transfer temperature to obtain an epitaxial wafer. In the technical scheme, the pre-deposited Al layer can inhibit the reaction between the substrate and N in the AlN layer, the formation of amorphous particles is avoided, the AlN morphology is improved, meanwhile, the pre-deposited Al layer not only relieves the lattice mismatch problem between the substrate material and the AlN, but also improves the Al atom migration rate for the growth of the subsequent AlN layer, promotes two-dimensional growth, and thus the AlN crystal quality is improved.

The application provides a strain compensation type quantum well material for an EEL (edge emitting laser) and a preparation method thereof, and belongs to the technical field of semiconductor optoelectronic devices. The material comprises a substrate, a lower limiting layer, a lower waveguide layer, a multi-quantum well active region, a strain compensation shell layer, an upper waveguide layer and an upper limiting layer. The multi-quantum well active region is formed by alternately growing InGaAs quantum well layers with compressive strain and AlGaInP barrier layers with tensile strain, so that strain self-compensation is achieved; the strain compensation shell layer adopts an Al component gradient change structure, so that strain accumulation and quantum confinement Stark effect are further inhibited. The preparation method adopts processes such as molecular beam epitaxy, temperature oscillation, dynamic beam current modulation and multi-layer in-situ annealing, so that the material quality and interface flatness are improved. The application effectively improves the temperature stability, output power and service life of the device, and is suitable for optoelectronic devices such as 905 nm band lasers.

The application discloses a kind of haptic temperature synergic sensor comprising flexible substrate material and preparation method thereof.Sensor includes flexible substrate, arrayed haptic sensing unit and multilayer heterostructure temperature-sensitive layer, multilayer heterostructure temperature-sensitive layer is alternately stacked by pressure-sensitive material layer, thermosensitive material layer and conductive material layer and so on Heterogeneous materials can realize the synergic perception of temperature and pressure.By reasonably designing the material properties and interface structure of each layer, the response performance of the sensor to multiple physical quantities is improved.

The invention belongs to the technical field of molecular beam epitaxy equipment, in particular to a high-temperature source furnace for molecular beam epitaxy equipment, which is characterized in that a heating assembly component is mounted on one side of a supporting seat, and the other side of the supporting seat is connected with an electrode flange seat; the crucible is installed in the heating assembly component, one end of the adjusting tungsten rod penetrates through the heating assembly component to abut against the crucible, and the other end of the adjusting tungsten rod abuts against the adjusting eccentric shaft rotationally installed on the supporting base; a plurality of tungsten heating wires are evenly arranged on the periphery of the crucible, the two molybdenum electrode rings serve as a positive electrode and a negative electrode respectively, the two molybdenum electrode rings are insulated from the supporting base and are in insulated connection with the supporting rod, and the two ends of each tungsten heating wire are connected with the two molybdenum electrode rings respectively; one end of the small flange connecting pipe and the electrode feed-through are fixedly connected with the flange seat, and the other end is fixedly connected with the thermocouple feed-through; the two molybdenum electrode rings are respectively connected with the electrode feed-through through molybdenum electrode rods, and a thermocouple connected with the thermocouple feed-through is arranged in the heating assembly component. The crucible has the advantages of high thermal stability, large crucible capacity, easiness in maintenance and the like.

The application relates to a preparation method of an epitaxial structure, the epitaxial structure and application thereof. The preparation method of the epitaxial structure comprises the following steps: providing a substrate; introducing a nitrogen source and a group III source, and epitaxially growing at least one dislocation blocking layer on the substrate by adopting a molecular beam epitaxy process; the dislocation blocking layer comprises a first growth layer and a second growth layer which are stacked in sequence, the first growth layer has a three-dimensional island-shaped morphology, the bottom surface of the second growth layer is in contact with the surface of the first growth layer which is away from the substrate, and the surface of the second growth layer which is away from the substrate has a planar structure; during the growth of the first growth layer, the stoichiometric ratio of the flow rates of the nitrogen source and the group III source is greater than 1, and during the growth of the second growth layer, the stoichiometric ratio of the flow rates of the nitrogen source and the group III source is less than 1; and a group III nitride material layer is epitaxially grown on the dislocation blocking layer by adopting the molecular beam epitaxy process. In this way, part of the dislocations can be terminated in the dislocation blocking layer, so that the dislocation density in the epitaxial structure is reduced.

The present invention relates to a method for non-in-situ growth of topological superconducting heterojunctions. In the present invention, argon ions in a molecular beam epitaxy chamber are used to etch a single-crystalline TiN thin film that has been exposed to air due to cross-device transfer. The argon ions are accelerated by an anode electric field and collide with the surface of the single-crystalline TiN thin film, thereby removing impurity atoms and dust on the surface of the single-crystalline TiN thin film, solving the problems of high cost increase and film surface contamination caused by cross-device in-situ growth. At the same time, compared with the high-temperature annealing technology, the etching method of the present invention can greatly reduce the growth time, avoid contaminating the ultra-high vacuum window, and avoid affecting the service life of the equipment. Then, on the surface of the adjacent single-crystalline TiN thin film under ultra-high vacuum, a single-crystalline Bi2Se3 thin film is epitaxially grown on the single-crystalline TiN thin film to obtain a TiN / Bi2Se3 topological superconducting heterojunction.

The invention provides an ultra-wide-band gain spectrum epitaxial material structure of a tunable laser and application of the ultra-wide-band gain spectrum epitaxial material structure. The epitaxial material structure comprises a substrate, a lower cladding, a waveguide layer, an upper limiting layer, an upper cladding and a contact layer which are sequentially arranged from bottom to top, the waveguide layer comprises an intrinsic waveguide layer and a bismuth compound quantum dot layer embedded in the intrinsic waveguide layer, and the gain bandwidth is widened through the energy band anti-cross effect instead of suppressing radiation recombination. The epitaxial material structure grows in a molecular beam epitaxy or metal organic vapor phase epitaxy mode, and the crystal quality is optimized in combination with a rapid thermal annealing process. By regulating and controlling the number of layers of the quantum dots and the bismuth component, the ultra-wideband gain spectrum coverage from near ultraviolet to near infrared bands is realized, the gain spectrum is wide, the gain peak value of the material is relatively high, and meanwhile, the material has a low linewidth enhancement factor and high temperature stability. The epitaxial material structure can be monolithically integrated in a DFB laser array and a semiconductor optical amplifier, and a core gain medium is provided for a high-performance tunable semiconductor laser.

The invention provides a phosphorus recovery processing system and a recovery processing method thereof. During recovery processing, cooling equipment is communicated with a growth chamber of molecular beam epitaxy equipment, so that the pressure of the cooling equipment is lower than atmospheric pressure, and a phosphorus material in the growth chamber is driven into the cooling equipment through baking; isolating the growth chamber from the cooling equipment, introducing heated nitrogen into the cooling equipment, purging phosphorus-containing gas in the cooling equipment, and discharging the phosphorus-containing gas outwards; phosphorus-containing gas is conveyed to a first treatment main body of the treatment equipment and is subjected to cooling, hydrogen peroxide treatment, copper sulfate treatment, potassium permanganate treatment and inspection treatment in sequence, and finally waste liquid is discharged to a first neutralizing tank for alkaline neutralization treatment. Through the configuration, the safety and the treatment efficiency of phosphorus recovery treatment are remarkably improved.

The invention discloses a preparation method of a water-soluble copper-iron-sulfur colloidal quantum dot with near-infrared absorption characteristic, hexamethyldisilazane is used as a sulfur precursor, an organic sulfur source and an n-octadecene solvent can rapidly form a colloidal quantum dot nucleation site, and the nucleation and growth process of the quantum dot is controlled in stages. Therefore, the CuFeS2 colloidal quantum dot has a tetrahedral morphology and has a determined exposed crystal face. The CuFeS2 colloidal quantum dots prepared by the method are uniform in morphology, uniform in size and narrow in particle size distribution; the process is simple and easy to implement, synthesis equipment is low in price, molecular beam epitaxy equipment and the like required by a traditional semiconductor are not involved, and the method is very suitable for high-productivity preparation of colloidal quantum dots for photoelectric detection and photovoltaic devices.