34 results about "Molecular beam epitaxy" patented technology

This invention belongs to the field of optical functional thin film materials, specifically relating to a silicon-oxygen-aluminum ternary composite optical coating material and its preparation method. Addressing the problem in existing technologies of achieving high transmittance, high hardness, and corrosion resistance synergistically within a single ternary material system, this invention utilizes a single-crystal thin film with a completely ordered single-phase structure epitaxially grown on a MgAl2O4 spinel single-crystal substrate, co-doped with transition metal ions and protons. Employing a combined laser molecular beam epitaxy and low-temperature proton implantation technique, alternatingly ablates the silicon target, aluminum target, and doped target, and simultaneously irradiating with a low-energy hydrogen ion beam under ultra-high vacuum, atomic-level epitaxial growth and in-situ proton embedding are achieved, resulting in a unified high transmittance, high hardness, and corrosion resistance.

The application provides a strain compensation type quantum well material for an EEL (edge emitting laser) and a preparation method thereof, and belongs to the technical field of semiconductor optoelectronic devices. The material comprises a substrate, a lower limiting layer, a lower waveguide layer, a multi-quantum well active region, a strain compensation shell layer, an upper waveguide layer and an upper limiting layer. The multi-quantum well active region is formed by alternately growing InGaAs quantum well layers with compressive strain and AlGaInP barrier layers with tensile strain, so that strain self-compensation is achieved; the strain compensation shell layer adopts an Al component gradient change structure, so that strain accumulation and quantum confinement Stark effect are further inhibited. The preparation method adopts processes such as molecular beam epitaxy, temperature oscillation, dynamic beam current modulation and multi-layer in-situ annealing, so that the material quality and interface flatness are improved. The application effectively improves the temperature stability, output power and service life of the device, and is suitable for optoelectronic devices such as 905 nm band lasers.

The application discloses a kind of haptic temperature synergic sensor comprising flexible substrate material and preparation method thereof.Sensor includes flexible substrate, arrayed haptic sensing unit and multilayer heterostructure temperature-sensitive layer, multilayer heterostructure temperature-sensitive layer is alternately stacked by pressure-sensitive material layer, thermosensitive material layer and conductive material layer and so on Heterogeneous materials can realize the synergic perception of temperature and pressure.By reasonably designing the material properties and interface structure of each layer, the response performance of the sensor to multiple physical quantities is improved.

The application belongs to the technical field of two-dimensional material preparation, and discloses a preparation method of two-dimensional tin phosphide material. In view of the problems of complex equipment, high cost and strong interface coupling existing in the preparation of two-dimensional SnP3 by using the existing molecular beam epitaxy method, the SnBi / Si (111) substrate with lamellar eutectic structure is prepared by Van der Waals extrusion, and the substrate has the functions of weak coupling interface and self-supply Sn source; the controllable epitaxial growth of two-dimensional SnP3 is realized under the condition of low-temperature chemical vapor deposition at 100 DEG C to 150 DEG C by taking black phosphorus as a phosphorus source. The application has simple process and mild conditions, and can obtain large-area and high-quality two-dimensional SnP3, and is suitable for the fields of optoelectronic devices and integrated circuits.

The application discloses an anti-interface rough scattering quantum cascade laser active region and a preparation method thereof. The application forms a topological interface state protected by chiral symmetry as a lasing upper energy level at the butt joint interface between a first superlattice region and a second superlattice region, the wave function of the topological interface state is strictly zero in the thick barrier center and the interface, thereby the non-radiation loss caused by the interface roughness scattering is inhibited from the root, and the upper energy level carrier lifetime is significantly prolonged. Based on this, the threshold current density of the quantum cascade laser is greatly reduced, and high-efficiency lasing of 10 μm wavelength can be realized at room temperature. Meanwhile, a mixed epitaxy process combining molecular beam epitaxy and metal organic chemical vapor deposition is adopted, the nanometer precision energy band design of the core active region is ensured, and the efficient growth of the thick film waveguide layer is realized, which is beneficial to the practicalization and large-scale preparation of the device.

This invention relates to a molecular beam epitaxy shutter and apparatus, and pertains to the field of epitaxial growth technology. In the molecular beam epitaxy shutter of this invention, the first and second blades of the shutter plate have an included angle, such that when the shutter plate blocks the furnace opening, the molecular beam stream and thermal radiation emitted from the furnace opening intersect the shutter plate at an angle. The molecular beam stream and thermal radiation are reflected by the shutter plate and fall outside the furnace, thus avoiding the problem that existing shutter structures cannot effectively prevent source material splashing and thermal reflection to the furnace opening, affecting the stability of epitaxial growth and the coating quality.

A molecular beam epitaxy (MBE)-grown two-color infrared nBn photodetector array integrated within a High-Density Vertically Integrated Photodiode (HDVIP) architecture. The innovative photodetector offers simultaneous detection of two distinct infrared spectral bands with enhanced sensitivity, reduced dark current, and fast response times. This innovative photodetector finds applications in various fields, including thermal imaging, security systems, environmental monitoring, and aerospace technology.

The application relates to a heating evaporation source furnace and a molecular beam epitaxy device, and belongs to the field of semiconductor manufacturing. The heating evaporation source furnace comprises a crucible, a heating assembly sleeved on the crucible, the heating assembly comprises heating wires which are arranged at intervals in the circumferential direction of the crucible and extend along the axial direction of the crucible, and a positioning ring configured to position the heating wires; the positioning ring comprises an inner positioning ring and an outer positioning ring which are connected to each other in the radial direction, and the heating wires are located between the inner positioning ring and the outer positioning ring in the radial direction and are limited in position in the radial direction and the circumferential direction by the combination of the inner positioning ring and the outer positioning ring. The technical scheme of the application improves the production efficiency.

The application relates to the technical field of semiconductor manufacturing equipment, and particularly provides a molecular beam epitaxy equipment pollutant in-situ cleaning system and method. The system comprises a radiation heating unit, a condensation capturing unit, a temperature acquisition assembly and a controller. The controller is used for acquiring metal type information of a metal to be cleaned and current vacuum degree of the molecular beam epitaxy equipment when the molecular beam epitaxy equipment does not perform a process, then determining a target temperature interval according to the metal type information and the current vacuum degree, and further used for controlling the condensation capturing unit to switch to a low-position working state, and controlling the radiation heating unit to perform radiation heating on a substrate heater, so that side wall temperature information is located in the target temperature interval, until a time length during which the side wall temperature information is maintained in the target temperature interval reaches a preset time length, and then controlling the condensation capturing unit to switch to a high-position retracted state. The system can effectively reduce the pollutant deposition amount of the substrate heater side wall.

The application relates to the technical field of molecular beam epitaxy equipment, in particular to a long-neck vertical crucible, a source furnace and a molecular beam epitaxy equipment, which comprises a vertical crucible body and a diffusion neck integrally formed with the vertical crucible body, the inside of the vertical crucible body is provided with a charging cavity, the top end of the charging cavity is provided with a narrow mouth, the diffusion neck is provided with a diffusion channel, the feeding end of the diffusion channel is communicated with the narrow mouth, and the diffusion neck is arranged at an angle with the vertical crucible body. The application can keep the liquid surface area of raw materials constant, make the beam intensity of a molecular beam or an atomic beam long-term stable and not attenuate, eliminate the direct view of the liquid surface of the raw materials and the substrate, avoid thermal radiation interference, ensure the uniformity of the substrate temperature, crack and filter large molecular groups or large atomic groups, and significantly reduce the film defect rate, the vertical crucible body is arranged outside a growth cavity, the raw material loading capacity is greatly improved, the maintenance period is prolonged, the beam fluctuation when a baffle is opened is reduced, and the beam uniformity in the time scale is improved.

The application discloses wafer-level two-dimensional graphite-phase carbon nitride and a preparation method thereof. The preparation method comprises the following steps: placing a substrate in a pretreatment cavity after cleaning and drying; performing degassing and vacuum annealing on the substrate until an atomic level step appears on the surface of the substrate, and then cooling to a first temperature; controlling a growth table to be heated to the first temperature, transferring the substrate to the growth table, and heating to a second temperature; controlling the growth table to rotate, introducing nitrogen into the growth cavity, and controlling a nitrogen plasma generating device and an electron beam device to start working; synchronously opening a nitrogen plasma generating device shutter and an electron beam device shutter; and cooling to room temperature after growth is completed. The wafer-level two-dimensional graphite-phase carbon nitride film is directly prepared based on a method of plasma-assisted molecular beam epitaxy, the prepared two-dimensional graphite-phase carbon nitride has good uniformity and high crystallization quality, the size and thickness of the prepared graphite-phase carbon nitride film can be adjusted based on actual requirements, and different research or working condition requirements can be met.

Apparatus and methods for growing films of complex layered metal oxides with high stoichiometries and high crystal qualities are provided. The layered complex metal oxides include two or more metals and oxygen and have a layered structure. The methods, which are referred to as hybrid pulsed laser deposition (hybrid PLD), synergistically combine the advantages of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) to grow complex metal oxide films that include metals with very different vapor pressures.

This invention provides a method for fabricating a device for measuring the mechanical loss of epitaxial single-crystal thin films and a method for measuring the mechanical loss of epitaxial single-crystal thin films at low temperature, belonging to the field of semiconductor micro-nano fabrication technology. The fabrication method includes: growing an epitaxial single-crystal thin film on the front side of an epitaxial substrate using molecular beam epitaxy to obtain an epitaxial substrate with the epitaxial single-crystal thin film on the front side; performing a coating process on the back side of the epitaxial substrate to compensate for stress on the warpage of the epitaxial single-crystal thin film; directly bonding the surface of the epitaxial single-crystal thin film away from the epitaxial substrate to a cantilever substrate to form a bonding pair, obtaining a composite material; removing the stress compensation film and the epitaxial substrate from the side of the epitaxial single-crystal thin film away from the cantilever substrate in the composite material to obtain the device; the cantilever substrate is made of single-crystal silicon, the epitaxial substrate is a group III-V semiconductor single-crystal substrate, and the epitaxial single-crystal thin film is a group III-V semiconductor single-crystal thin film.

This invention belongs to the field of crucible preparation technology, and relates to a method for preparing an aluminum source crucible and the aluminum source crucible itself. The preparation method includes preparing an aluminum nitride crucible using a powder molding method; immersing the aluminum nitride crucible in an acidic solution, cleaning it with an alkaline solution, and ultrasonically cleaning it with an organic solution; wrapping the cleaned aluminum nitride crucible and then baking it at a low temperature; and degassing the baked aluminum nitride crucible at a high temperature under vacuum conditions to obtain the prepared aluminum source crucible. The aluminum source crucible prepared by this method solves the problems of unstable aluminum beam flow caused by high-temperature aluminum solution wetting in the crucible, aluminum liquid solidification causing crucible baffle adhesion, and aluminum melt sliding into the crucible causing temperature changes and evaporation rate fluctuations in the aluminum liquid. At the same time, the aluminum source crucible has good chemical stability, avoiding the release of water vapor and volatilization of organic impurities during molecular beam epitaxy, which would affect the quality of the epitaxial material.

Methods for a low-disorder two-step molecular beam epitaxy ("MBE") growth procedure for deep,high mobility quantum well proximitized with epitaxial metal. Shallow quantum wells ("QWs")of InAs- or InSb-based materials are grown using MBE, topped with a layer of epitaxially matched metal after a thin (~ 10 nm) barrier layer for a strong proximity effect. A second MBE step grows an additional layer forming a deep, proximitized quantum well.

The application discloses a kind of beta-gallium oxide film and its preparation method, the preparation method includes the following steps: providing substrate, the substrate includes oppositely arranged first surface and second surface;Preparation metal layer on the second surface;Providing oxygen source and gallium source, by molecular beam epitaxy process or pulse laser epitaxy process on the first surface preparation beta-gallium oxide film, the oxygen source is ozone or oxygen plasma.The application is by preparing metal layer on the second surface of substrate, with ozone or oxygen plasma as oxygen source, in combination with molecular beam epitaxy process or pulse laser epitaxy process, successfully on the first surface of substrate preparation high crystallinity, low carbon content high-quality beta-gallium oxide film.

The application belongs to the technical field of semiconductor material preparation, and relates to a multi-element oxide film and a preparation method and application thereof. In view of the technical problem that the multi-element oxide film is difficult to be prepared uniformly in a large area in the prior art, the application provides a preparation method of the multi-element oxide film, which is prepared by molecular beam epitaxy co-evaporation and comprises the following steps: placing a substrate in a molecular beam epitaxy co-evaporation preparation cavity, and vacuumizing the cavity; sequentially depositing a YSZ buffer layer and a CeO2 buffer layer from bottom to top in the cavity, and obtaining a substrate containing the buffer layers by controlling electron beam automatic evaporation through a film thickness gauge; depositing a YBCO film on the substrate containing the buffer layers by co-evaporating yttrium, copper and barium fluoride, and obtaining a multi-element oxide film with good large-area uniformity by co-evaporating the Y evaporation source, the Cu evaporation source and the Ba evaporation source through the film thickness gauge. The application further provides the multi-element oxide film and application thereof.

The application discloses an ultrahigh-coercivity sintered Nd-Fe-B magnet and a preparation method thereof. The steps include: smelting alloy raw materials, and performing flake casting; sequentially performing heat treatment, hydrogen crushing, airflow milling, magnetic field forming, cold isostatic pressing treatment, and sintering to obtain a sintered Nd-Fe-B magnet one; depositing a non-rare earth target material on the surface of the sintered Nd-Fe-B magnet one by using a molecular beam epitaxy technology; performing grain boundary diffusion and heat treatment; depositing a heavy rare earth target material on the surface of the sintered magnet by using the molecular beam epitaxy technology to obtain a sintered Nd-Fe-B magnet two, performing grain boundary diffusion and heat treatment, and then performing a tempering process to obtain the sintered Nd-Fe-B magnet. The method realizes atomic-level film layer control by using the molecular beam epitaxy technology, overcomes the problem that it is difficult to obtain a uniform and thin diffusion layer by using a traditional coating method, can efficiently utilize diffusion materials, improves the uniform diffusion depth of heavy rare earth elements in the magnet, and prepares the ultrahigh-coercivity magnet, thereby meeting the needs of the rare earth permanent magnet motor industry.

The application provides a method for regulating a thin film crystal structure, and belongs to the technical field of semiconductor microelectronic and optoelectronic materials. The method comprises the following steps: (1) performing oxygen plasma treatment on the surface of a clean magnesium oxide single crystal substrate by using a molecular beam epitaxy technology, and growing a zinc oxide buffer layer; and (2) subsequently growing a MgZnO thin film on the surface of the magnesium oxide single crystal substrate by using the molecular beam epitaxy technology. The process step for growing the MgZnO thin film is that: oxygen activated by plasma, a Zn metal source and a Mg metal source are simultaneously introduced to grow the MgZnO thin film; and the crystal phase of the MgZnO thin film is a cubic structure or a hexagonal structure by regulating the temperature of the Mg metal source. The method can regulate the crystal structure by only regulating the element content in the material without changing the substrate structure. The method can not only regulate the element content in the material, but also obtain materials with different crystal phases by regulating the growth conditions.

This invention discloses a semiconductor quantum dot, a method for preparing a single-photon source, and a quantum signal detection system. The method prepares InAs / GaAs quantum dots using molecular beam epitaxy in the Stranski-Krastanow mode, and then combines the prepared semiconductor quantum dots with a microcavity to form a single-photon source. The quantum signal detection system includes a semiconductor quantum dot single-photon source, a laser pump source, a wavelength division multiplexing (WDM) fiber, and an HBT interferometer. The input end of the WDM fiber is connected to the laser pump source, and the output end is connected to the HBT interferometer. Laser light excited by the laser pump source is perpendicularly irradiated onto the surface of the semiconductor quantum dot single-photon source through the WDM fiber, causing electrons to transition to an excited state and radiate recombination to emit photons. After emission, the quantum dot emits light, which is then collected at the end face of the same fiber. The HBT interferometer measures the output signal. This invention allows for the adjustment of the luminescence properties by doping with appropriate metal elements, enabling precise detection of the single-photon signal output from the quantum dot single-photon source.

This invention relates to the field of thin film material preparation technology, specifically to a method for preparing a single-crystal transition metal nitride epitaxial thin film with an anti-perovskite structure. In a molecular beam epitaxy (MBE) apparatus, after heating the single-crystal substrate, a transition metal atom beam and an active nitrogen atom beam generated by a radio frequency plasma source are supplied simultaneously and independently. By precisely controlling the beam ratio, growth is kept within a narrow stoichiometric window. During growth, in-situ real-time monitoring is performed using reflective high-energy electron diffraction to ensure the film grows in a two-dimensional layered manner. Finally, the film is slowly cooled in an active nitrogen atmosphere. This method can prepare single-crystal thin films with atomically flat surfaces, high phase purity, excellent crystallinity, and a clear epitaxial relationship, exhibiting fewer nitrogen vacancy defects and significantly optimized magnetic and other physical properties.

The application relates to an interconnection device of a pulsed laser deposition and a molecular beam epitaxy and a coating equipment. A sample transfer assembly transports a sample between a pulsed laser deposition structure and a transfer chamber in a state that a first valve is opened and a second valve is closed, and transports the sample between a molecular beam epitaxy structure and the transfer chamber in a state that the second valve is opened and the first valve is closed. The sample in the transfer chamber can enter and exit the pulsed laser deposition structure through the first valve and can enter and exit the molecular beam epitaxy structure through the second valve. The pulsed laser deposition structure and the molecular beam epitaxy structure do not interfere with each other, and a transfer operation can be carried out without breaking a vacuum, so that effective interconnection of the pulsed laser deposition and the molecular beam epitaxy is realized, the production efficiency of a doping process is improved, and different coating processes of the pulsed laser deposition and the molecular beam epitaxy can be respectively carried out to form a film doped with different materials, so that better material properties and functional effects are achieved.

The application discloses a preparation method of a wafer-level self-supporting CdTe film, and comprises the following steps: providing a two-dimensional material / sapphire substrate; growing a CdTe film on the surface of the two-dimensional material / sapphire substrate; separating the CdTe / two-dimensional material from the surface of the sapphire substrate by a heat-releasing tape peeling method; and removing the viscosity of the heat-releasing tape by heating to obtain a high-quality self-supporting CdTe film. The method utilizes the good lattice matching between the sapphire substrate and the CdTe film, and utilizes the two-dimensional material as a transition layer to avoid the bonding of the dangling bonds on the surface of the sapphire and the CdTe film. The CdTe film is grown by a molecular beam epitaxy system, the CdTe film is peeled from the substrate by using the heat-releasing tape, and finally the viscosity of the tape is removed by heating to obtain the self-supporting CdTe film. The self-supporting CdTe film prepared by the application can be widely compatible with silicon-based electronic devices, and has great application value in flexible wearable electronic devices and the like.

This invention discloses an MBE (molecular beam epitaxy) source furnace and its thin film growth method, belonging to the field of semiconductor thin film preparation technology. The source furnace includes a gas mass flow controller, a plasma initiation device, a plasma generation cavity, and a plasma termination device connected sequentially along the beam direction. The outer wall of the plasma generation cavity is surrounded by a cross-distributed RF electrode system for efficient and uniform gas ionization. The plasma termination device is a double-layer batching disk structure used to shape the plasma into a uniform molecular beam. The method for growing thin films using this source furnace includes steps such as substrate heating, introduction of reactive gas, RF excitation to generate plasma, and beam application to the substrate for thin film growth. This invention effectively solves the problems of low ionization efficiency and non-uniform beam flow in traditional plasma sources, and is particularly suitable for the preparation of high-quality nitride and oxide semiconductor single-crystal thin films.

The present disclosure includes a thin film assembly comprising a substrate and an epitaxial crystalline thin film disposed on the substrate, wherein the epitaxial crystalline thin film is a single crystal, wherein at least a portion of the epitaxial crystalline thin film is doped with rare-earth ions at a concentration of less than 100 parts per billion. The disclosure further includes a method of manufacturing a thin film assembly, the method comprising creating, on a substrate and with use of molecular beam epitaxy, an epitaxial crystalline thin film doped with the rare-earth ions at a concentration of less than 100 parts per billion.

This invention provides a method for preparing LaBi(00l) single-crystal thin films using molecular beam epitaxy (MBE), belonging to the field of thin film preparation technology. The method involves heating a lanthanum (La) and bismuth (Bi) evaporation source to a certain temperature, then co-depositing the La and Bi molecular beams onto a Si(001) substrate heated to a certain temperature, thereby forming a LaBi thin film. Subsequently, the film is annealed while keeping the Bi evaporation source on, and then cooled to room temperature. The LaBi(00l) single-crystal thin film prepared by this method exhibits a [00l] orientation. The method provided by this invention offers controllable processes and good repeatability, providing an effective approach for preparing high-quality LaBi thin films.

The application discloses a substrate support plate in a molecular beam epitaxy production device, and belongs to the field of semiconductor devices, which is used to solve the problem of how to reduce production cost and improve wafer quality. The substrate support plate in the molecular beam epitaxy production device comprises a bottom support plate and a graphite transition support plate. The bottom support plate is provided with a first through hole, and at least one first step is arranged on the inner side of the first through hole. The graphite transition support plate is made of graphite crystal material, and the outer side of the graphite transition support plate is provided with a second step matched with the first step. The graphite transition support plate is embedded in the first through hole, and the second step is supported on the first step. The middle part of the graphite transition support plate is provided with a second through hole, and a wafer step for placing a substrate wafer, a ring step for placing a heat radiation blocking ring and a limiting step for limiting the movement of the heat radiation blocking ring are sequentially arranged on the inner side of the second through hole along an axial direction.

This invention discloses an extended wavelength InGaAs detector structure and its fabrication method. The detector structure, from bottom to top, consists of a substrate, a pseudo-substrate, an absorption layer lattice-matched to the pseudo-substrate, and a cap layer. The fabrication method involves preparing a pseudo-substrate with a variable composition of high-In-content InAlAs or high-As-content InAsP via molecular beam epitaxy, and improving the material quality through chemical mechanical polishing (CMP) to complete the pseudo-substrate preparation. The surface after CMP is treated with wet etching. An extended wavelength InGaAs short-wave infrared detector is grown based on the CMP-polished InAlAs or InAsP epitaxial material. This invention can effectively reduce surface roughness, suppress the propagation of penetrating dislocations, and improve the photoelectric properties of the material.

The application relates to a heterojunction showing abnormal Hall effect at low temperature and a preparation method thereof, in particular to the following steps: taking a gadolinium gallium garnet substrate as a base, after the substrate is treated through cleaning and the like, the substrate is placed in a vacuum system, and through steps of heating annealing and degassing, a Tm3Fe5O 12 thin film is grown on the substrate by using pulse laser deposition; and the grown thin film is taken as a base and is placed into a molecular beam epitaxy device, and a SnTe thin film with a certain thickness is grown on the base by using a molecular beam epitaxy technology. By using the method, a high-quality thin film material with abnormal Hall effect under specific temperature conditions can be obtained, the thin film material can show abnormal Hall effect at a temperature below 20K, and the temperature has a regulating effect on the signal size of the abnormal Hall effect.