Ultraviolet detector with high spectral selectivity and high sensitivity and preparation method of ultraviolet detector

An ultraviolet detector and high-sensitivity technology, applied in the field of ultraviolet detectors, can solve the problems of increasing the complexity and manufacturing cost of the detector, reducing the scope of application of the detector, and being fragile and expensive. stable effect

Active Publication Date: 2016-06-15
东港智科产业园有限公司
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  • Abstract
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AI Technical Summary

Problems solved by technology

[0004] In order to achieve high spectral selectivity and high sensitivity of the detector, it is usually necessary to add filters and signal amplifiers to the detector. These accessories are generally bulky, fragile and expensive, which increases the complexity and manufacturing cost of the detector, and also makes the The scope of application of the detector is greatly reduced

Method used

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  • Ultraviolet detector with high spectral selectivity and high sensitivity and preparation method of ultraviolet detector
  • Ultraviolet detector with high spectral selectivity and high sensitivity and preparation method of ultraviolet detector
  • Ultraviolet detector with high spectral selectivity and high sensitivity and preparation method of ultraviolet detector

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Embodiment 1

[0029] Proceed as follows:

[0030] 1) Pretreatment of n-type 4H-SiC substrate: put n-type 4H-SiC substrate into V(HF):V(H 2 o 2 )=1:5 solution soaked to remove the natural oxide layer, then ultrasonic cleaning with acetone, ethanol and deionized water respectively, and vacuum drying;

[0031] 2) Place the target and substrate: place the Ga 2 o 3 The target is placed on the target stage of the laser molecular beam epitaxy system, and the n-type 4H-SiC substrate processed in step 1) is fixed on the sample holder and put into the vacuum chamber;

[0032] 3) β-Ga 2 o 3 Thin film deposition process: first vacuumize the chamber, feed oxygen, adjust the pressure in the vacuum chamber, heat the n-type 4H-SiC substrate, and grow β-Ga 2 o 3 thin film, after the growth of the thin film is completed, continue to feed oxygen, adjust the pressure in the vacuum chamber, and the obtained β-Ga 2 o 3 The thin film is annealed in situ; among them, Ga 2 o 3 The distance between the ta...

Embodiment 2

[0037] Steps (1), (2) and (4) are all the same as in Example 1. In step (3), the chamber is first evacuated, oxygen is introduced, the pressure in the vacuum chamber is adjusted, and the n-type 4H-SiC substrate is heated to grow β-Ga 2 o 3 thin film, after the growth of the thin film is completed, continue to feed oxygen, adjust the pressure in the vacuum chamber, and the obtained β-Ga 2 o 3 The thin film is annealed in situ; among them, Ga 2 o 3 The distance between the target and the n-type 4H-SiC substrate was set at 5 cm, and the chamber pressure after vacuuming was 1×10 -6 Pa, when heating the n-type 4H-SiC substrate, the cavity pressure is 1×10 -3 Pa, β-Ga 2 o 3 When the film is annealed in situ, the cavity pressure is 1Pa, and the laser energy is 200mJ / cm 2 , the laser pulse frequency is 1Hz, the laser wavelength is 248nm, the heating temperature of n-type 4H-SiC substrate is 700℃, β-Ga 2 o 3 The annealing temperature of the film is 700° C., and the annealing ...

Embodiment 3

[0040] Steps (1), (2) and (4) are all the same as in Example 1. In step (3), the chamber is first evacuated, oxygen is introduced, the pressure in the vacuum chamber is adjusted, and the n-type 4H-SiC substrate is heated to grow β-Ga 2 o 3 thin film, after the growth of the thin film is completed, continue to feed oxygen, adjust the pressure in the vacuum chamber, and the obtained β-Ga 2 o 3 The thin film is annealed in situ; among them, Ga 2 o 3 The distance between the target and the n-type 4H-SiC substrate was set at 5 cm, and the chamber pressure after vacuuming was 1×10 -6 Pa, when heating the n-type 4H-SiC substrate, the cavity pressure is 1×10 -3 Pa, β-Ga 2 o 3 When the film is annealed in situ, the cavity pressure is 1.5Pa, and the laser energy is 200mJ / cm 2 , the laser pulse frequency is 1Hz, the laser wavelength is 248nm, the heating temperature of n-type 4H-SiC substrate is 750℃, β-Ga 2 o 3 The annealing temperature of the film is 700° C., and the annealin...

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Abstract

The invention relates to an ultraviolet detector, in particular to an ultraviolet detector with high spectral selectivity and high sensitivity and a preparation method of the ultraviolet detector. A beta-Ga<2>O<3> film is deposited on an n-type 4H-SiC substrate through a laser molecular beam epitaxy technique; and a Ti/Au film is deposited on the n-type 4H-SiC substrate and the beta-Ga<2>O<3> film for use as an electrode by a mask through a radio-frequency magnetron sputtering technique. The ultraviolet detector has the advantages that the prepared ultraviolet detector has stable performance, has high selectivity and high sensitivity on an ultraviolet spectrum with a specific wavelength, is low in dark current, and can be applied to fire alarm, high-voltage line corona and detection of the spectrum with the specific wavelength; furthermore, the preparation method has the characteristics of being high in process controllability, simple in operation, good in universality and the like and has a great application prospect; and a repeated test has recoverability.

Description

technical field [0001] The invention relates to an ultraviolet detector, in particular to an ultraviolet detector with high spectral selectivity and high sensitivity and a preparation method thereof. technical background [0002] Because high-voltage line corona, space, missile plume and flames all contain ultraviolet radiation, ultraviolet detection technology is used in many fields such as military affairs, scientific research, aerospace, and communication electronics. At present, the wide-bandgap semiconductor ultraviolet detector is the main research direction of ultraviolet detectors, especially the sun-blind ultraviolet detector, which has the advantages of small size, low power consumption, no need for cryogenic cooling and low false alarm rate, and can be adjusted by The material composition changes the wavelength range of the response. [0003] Spectral selectivity and sensitivity are important performance indicators of UV detectors. Detectors often respond to a s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/09H01L31/032H01L31/18
CPCH01L31/032H01L31/09H01L31/18Y02P70/50
Inventor 张香丽
Owner 东港智科产业园有限公司
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