40 results about "Non polar" patented technology

A film for manufacturing a flexographic printing plate, which comprises a base material and an ablation layer laminated on the base material, the ablation layer containing a resin having a structural unit (1) represented by general formula (1), and the thickness of the base material being 10 [mu] m or more and less than 100 [mu] m. (In formula (1), R1 and R2 each independently represent a non-polar group, and R3 and R4 each independently represent a hydrogen atom or a non-polar group. > # imgabs0 #

The invention discloses a degradation control agent, a refracturing controllable degradation plugging agent and a preparation method. The degradation control agent is an inclusion compound of cyclodextrin and benzoyl peroxide; the controllable degradation plugging agent for refracturing comprises the degradation control agent; the cyclodextrin molecule has an annular cavity structure, an internal cavity is non-polar, and benzoyl peroxide serving as an organic gel breaker can enter the cavity to form an inclusion compound; when a liquid rubber plug formed by the refracturing controllable degradation plugging agent is in a release medium, benzoyl peroxide molecules are released, inclusion balance is destroyed, deinclusion is carried out to carry out gel breaking degradation, and then the purpose of controllable degradation of the refracturing plugging agent is achieved by controlling the dosage of the degradation control agent.

The present disclosure relates to the technical field of film material, and particularly to a polymeric polyphenol-modified polymer film, a preparation method thereof and a metallized polymer film. According to the present disclosure, corona treatment is performed to a surface of a polymer layer, so that a polar modifying liquid can uniformly coat the surface of the polymer layer, thereby forming a modification layer tightly combined with the polymer layer. Thus, the low-polarity polymer layer surface can be imparted with a durable high polarity. Consequently, the polymer layer is capable of being stably and tightly bonded to a material layer with high polarity and high surface tension, such as a metal layer, for a long period of time, effectively broadening the application scenarios for non-polar polymer substrate layers. By controlling the concentrations of the polyphenolic compound and the cross-linking agent in the modifying liquid, the modification layer formed by a cross-linking reaction can have a suitable cross-linking density and an adequate number of hydroxyl groups, thereby further effectively and stably enhancing the long-term polarity and surface tension of the polymer layer. The preparation method is simple and easy to operate, cost-effective, efficient, and easy to scale up.

The invention provides a piezoelectric film preparation method based on femtosecond laser processing and a piezoelectric energy collector, and relates to the technical field of piezoelectric equipment. NaNbO3amp is irradiated by femtosecond laser; on the surface of the P (VDF-TrFE) composite film, when femtosecond laser irradiates the surface of a substance, light and the substance can interact with each other, non-polar alpha-phase disordered molecular chains in a non-polarized state are rearranged under the rapid and short-time driving force of femtosecond laser polarization, the influence of disordered factors such as thermal motion is overcome, ordered arrangement is achieved, a beta-phase structure with dipole moment is formed, and the surface of the P (VDF-TrFE) composite film is formed. The NaNbO3amp is enhanced; the P (VDF-TrFE) composite film has the advantages of good piezoelectric property, low operation requirements, high processing efficiency and reduced production cost.

The invention relates to the technical field of high polymer materials, in particular to a preparation method and application of double-modified cross-linked hyaluronic acid gels, the method adopts natural active matters to perform double modification on hyaluronic acid, and comprises the following steps: firstly, performing primary cross-linking on fucoidan, hyaluronic acid and salts thereof under proper conditions to form a stable core structure; carrying out secondary crosslinking on calycosin and the fucoidan hyaluronic acid gel subjected to the primary crosslinking, so as to form a hydrophobic outer layer; through introduction of a non-polar group on calycosin, the crosslinked fucoidan-hyaluronic acid-calycosin composite gel is formed, and the gel has a hydrophilic / hydrophobic vesicle structure at the same time; any chemical cross-linking agent does not need to be used, adverse reactions caused by cross-linking agent residues are avoided, meanwhile, the elastic modulus and the mechanical strength of the gel are optimized by adopting a mode of combining high-temperature and low-temperature step-by-step cross-linking reactions, and the gel can be used for medical filling materials, slow-release carriers or preparation of skin care products.

The invention discloses a zwitter-ion mixed-mode chromatographic stationary phase as well as a preparation method and application thereof. The polymer is mainly composed of a bottom tertiary amine (alkaline) group and a top negative ion (acidic) group, and hydrophobic groups are distributed in the polymer. Different groups can be modified on the surface of the silica gel through a direct bonding or indirect assembling method, and the process is simple, controllable and repeatable. The zwitter-ion stationary phase is novel in composition, stable in structure and adjustable in surface property, has zwitter-ion polar groups and non-polar groups such as alkyl / aryl, can provide multiple interactions at the same time, and is suitable for separating different types of substances in multiple chromatographic separation modes such as hydrophilicity, reverse phase and ion exchange.

The application belongs to the technical field of perovskite quantum dot preparation, and particularly relates to a method for preparing perovskite quantum dots by using nano transient precipitation. The method comprises the following steps: dispersing A-site cation halide, B-site metal ion halide and a ligand of ABX3 type perovskite quantum dots in a polar solvent to obtain a precursor solution; and mixing the precursor solution and a non-polar anti-solvent by jet flow mixing to induce turbulent mixing, and obtaining the perovskite quantum dots after stopping. The preparation method provided by the application can be carried out at normal temperature and pressure, without the need for high-temperature heating and inert atmosphere protection, thereby avoiding the harsh reaction conditions of the hot injection method, and greatly reducing the process complexity and energy consumption cost. The jet flow mixing technology is used to realize efficient mixing in milliseconds, and the mixing time is shortened by 2-3 orders of magnitude compared with the traditional method, so that the transient uniform supersaturation of the precursor is ensured, thereby obtaining perovskite quantum dot products with narrow particle size distribution and excellent optical performance.

The invention provides heterocyclic binary acid containing a non-polar hydrophobic group as well as a preparation method and application of the heterocyclic binary acid. The heterocyclic binary acid has a structure as shown in a formula 1, # imgabs0, Y is a substituted or unsubstituted heterocyclic group, R1 and R2 are independently selected from H, a substituted or unsubstituted straight-chain or branched-chain kang group, and a substituted or unsubstituted aryl group or heterocyclic ring, and m and n are independently selected from integers between 0 and 9. The heterocyclic binary acid disclosed by the invention has the advantages of good biocompatibility, low toxicity, degradability and the like, and is used for synthesizing an environment-friendly plasticizer.

The invention provides a non-polar gallium nitride device and a manufacturing method thereof.The non-polar gallium nitride device comprises a diamond layer, a non-polar gallium nitride layer, a passivation layer, a first electrode and a second electrode which are sequentially stacked, the first electrode and the second electrode penetrate through the passivation layer to the non-polar gallium nitride layer, the passivation layer is arranged on the surface of the non-polar gallium nitride layer, and the second electrode is arranged on the surface of the non-polar gallium nitride layer. The method is used for suppressing surface electric leakage and trap effects, thereby improving the performance of the non-polar gallium nitride device. A heterogeneous interface is formed between the diamond layer and the non-polar gallium nitride layer, and the interface state concentration of the heterogeneous interface meets the low interface state concentration condition, that is, the interface state concentration of the heterogeneous interface between the non-polar gallium nitride layer and the diamond layer is relatively low, so that the radio frequency loss can be reduced, and efficient heat dissipation can be realized by utilizing the diamond layer; the heat dissipation performance of the non-polar gallium nitride device is improved, and finally the performance of the non-polar gallium nitride device is improved.

The present invention relates to the field of semiconductor device technology, and in particular to a non-polar a-plane gallium nitride epitaxial structure and a preparation method thereof. After providing an r-plane sapphire substrate and few-layer graphene, the few-layer graphene is transferred to the growth surface of the substrate, and the few-layer graphene is bonded to the growth surface to prepare an epitaxial substrate. The area of ​​wrinkles on the surface of the few-layer graphene in the epitaxial substrate accounts for less than or equal to 1%, and the maximum thickness is any value between 0.3nm and 0.7nm. Metal organic compound chemical vapor deposition is performed on the surface of the epitaxial substrate to obtain a non-polar a-plane gallium nitride epitaxial structure. The few-layer graphene reduces the lattice mismatch problem between the substrate and the gallium nitride epitaxial layer obtained by epitaxy, ensures that the electrostatic potential of the substrate can act on the epitaxial layer through the few-layer graphene, and also reduces the local stress or gaps caused by the wrinkles, which helps to improve the quality of the epitaxial layer.

The invention relates to the technical field of wastewater treatment, and particularly discloses a copper-based MOF material for adsorbing perchlorate in wastewater and a preparation method of the copper-based MOF material for adsorbing the perchlorate in the wastewater aiming at the problem of poor selective adsorbability when an existing cationic metal-based MOF material is used for adsorbing and removing impurities from the perchlorate in the wastewater. The copper-based MOF material comprises a soft acid metal center, a non-polar polydentate nitrogen ligand and R-sulfonic acid counter ions, and the soft acid metal center and the non-polar polydentate nitrogen ligand form a negatively charged hydrophobic porous skeleton. A hydrophobic porous skeleton is constructed through a soft acid metal center and a non-polar multidentate nitrogen ligand, specific capture of ClO4 <-> with a large ionic radius and strong hydrophobicity is realized, the synthesis process is simple, the chemical structure is stable, the adsorption capacity is large, environment friendliness is realized, and the adsorbent has a remarkable adsorption effect when being used for adsorbing and removing ClO4 <-> and oxygen-containing anions with similar structures in water.

The application discloses a symmetrical gallium nitride (GaN) based high electron mobility transistor (HEMT) structure and a preparation method thereof. x Ga 1‑x The HEMT structure comprises a GaN layer with a non-polar face as an upward crystal face, a mask layer, a GaN stereoscopic triangular island, an Al The application utilizes selected area epitaxy and combines lateral epitaxy to obtain a GaN island with a stereoscopic structure, the GaN island naturally forms a left-right symmetrical structure due to its crystal properties, and the HEMT prepared based on the feature has atom level consistency, and the left-right symmetrical semi-polar face AlGaN / GaN heterojunction can generate a two-dimensional electron gas (2DEG) with a convenient control concentration, realizes high-quality, high-performance and high-consistency paired GaN based HEMT, and can be applied to mirror current sources, differential amplification and other circuits, and has better consistency and stability compared with traditional devices.

The invention discloses a preparation method and application of a flexible porous membrane capable of identifying polar and non-polar gases, and the preparation method comprises the following steps: step 1, uniformly stirring and mixing a prepolymer and a curing agent, adding a mixture of carbon black and a sacrificial template, ultrasonically and uniformly mixing, vacuumizing to remove bubbles, and heating and curing to obtain a compound of a membrane and the sacrificial template; 2, removing the sacrificial template in the compound by using a template remover, cleaning by using a cleaning agent, and drying to obtain a flexible porous PDMS substrate; and step 3, placing the flexible porous PDMS substrate in a plasma cleaning instrument for radio frequency treatment, placing the flexible porous PDMS substrate subjected to radio frequency treatment in a cross-linking agent-containing solvent, standing in a dark place, cleaning, and drying to obtain the flexible porous membrane. According to the preparation method, carbon powder is introduced to enhance an electric signal after being in contact with gas, molecular chains containing F / H are connected into the surface and holes of the membrane through self-assembly, and due to the difference of F / H electronegativity, corresponding electric signals are presented for gas molecules with different polarities for people to distinguish the gas.

The invention discloses a non-polar heat-stable light conversion adhesive film and a preparation method thereof. The preparation method comprises the following steps: dissolving alkane amine, alkane acid and a light conversion agent in a reaction solvent to obtain a mixed solution; adding a silane coupling agent into the mixed solution, stirring for a period of time at 45-55 DEG C, heating to 115-125 DEG C, keeping for a period of time, then adding POE resin, stirring and fully mixing at 95-105 DEG C, and then drying to obtain the non-polar heat-stable light conversion adhesive film. The light conversion adhesive film prepared by the invention can block the damage of ultraviolet photons to a photovoltaic cell, improve the stability of the cell, effectively utilize high-energy photons and improve the efficiency of a photovoltaic module, and has stability at a high temperature of 120 DEG C.

The invention relates to the technical field of ferroelectric polymers, in particular to an enhanced ferroelectric polymer film based on X-ray irradiation, a preparation method of the enhanced ferroelectric polymer film and a sensor, and the preparation method of the enhanced ferroelectric polymer film comprises the following steps: providing a ferroelectric polymer film, and carrying out polarization treatment on the ferroelectric polymer film to obtain a pretreated film; and performing X-ray irradiation on the pretreated film to obtain the enhanced ferroelectric polymer film. Polarization treatment is utilized to induce orientation ordered arrangement of polar groups in a polymer molecular chain to form a beta-phase crystal structure, so that piezoelectric and pyroelectric properties are improved; then injecting energy through X-ray irradiation to promote conversion of a non-polar alpha phase to a polar beta phase, and inducing crystal rearrangement to enhance coupling between molecular chains; therefore, the polar phase content of the ferroelectric polymer film is remarkably increased under the synergistic effect of polarization treatment and X-ray irradiation, the piezoelectric coefficient and the pyroelectric coefficient are further enhanced, and finally the sensitivity of the sensor is improved.

The present invention relates to an electrowetting optical element comprising: a first electrode layer stack comprising a substrate and a first electrode layer; a second electrode layer stack including a substrate and a second electrode layer; an accommodation space formed between the first and second electrode layer stacks; one or more cell walls extending between the first and second electrode stacks for defining a side of the accommodation space forming a cell; the accommodating space comprises a polar liquid and a non-polar liquid, and the polar liquid and the non-polar liquid are not dissolved with each other; wherein the first and second electrode layers are configured to apply a voltage between the electrodes to reconfigure the polar liquid relative to the non-polar liquid; wherein the first electrode layer stack further comprises an insulating layer disposed between the first electrode layer and the receiving space, forming an interface with the receiving space, and wherein the insulating layer comprises a first and a second group of polymers, the first group of polymers comprises functional hydrophilic chemical groups configured to form covalent bonds with the first electrode layer stack, and the second group comprises polymers without functional hydrophilic chemical groups, and wherein the first and second groups of polymers are configured as an entangled polymer network in the insulating layer.

The invention provides an optimization method for hole transport layer interface modification and application thereof, and belongs to the technical field of solar cell materials. The selected modification materials comprise cinnamyl alcohol, citronellol, phenethyl alcohol and the like, and the materials have the characteristics of economy and environmental protection, can be dissolved in an alcohol solvent, and are suitable for large-area modification by adopting simple modes such as spraying and the like, so that low-cost and nondestructive treatment of the hole transport layer is realized. Through the modification materials, the surface characteristics of the hole transport layer can be effectively improved. Depending on the synergistic effect of polar and non-polar functional groups, a hinge effect can be generated between the hole transport layer and a perovskite precursor, so that the crystallization process of perovskite is regulated and controlled, interface contact is optimized, and the performance, stability and preparation repeatability of a device are improved. Meanwhile, by means of polarity difference of molecular functional groups, ordered molecular assembly is realized, and an interface electric field is constructed, so that carrier transport kinetics of an anode interface is regulated and controlled, and the performance of a device is enhanced.

The application provides a micro chromatographic column for light hydrocarbon separation and a preparation method thereof, and the micro chromatographic column is prepared from FG and HKUST-1 to obtain FG-HKUST-1 stationary phase, and the FG-HKUST-1 stationary phase is non-polar material; in addition to having a screening effect on C1-C4 light hydrocarbon, further, there is a dispersion force between the non-polar FG-HKUST-1 stationary phase and non-polar light hydrocarbon, such as non-polar methane and ethane, so that the non-polar FG-HKUST-1 stationary phase has strong retention capacity for non-polar light hydrocarbon, thereby the resolution of C1-C4 light hydrocarbon can be improved, especially for light hydrocarbon with low resolution, large concentration difference and similar properties, such as methane and ethane, so that the application can meet the requirements of qualitative and quantitative analysis and detection of light hydrocarbon.

The invention relates to a cleaning solution for semiconductor wafers after amine washing, which comprises the following components in parts by weight: 50-80 parts of environment-friendly organic solvent; 0.5 to 3 parts of an amino alcohol corrosion inhibitor; 1-5 parts of a polyhydroxy corrosion inhibitor; and 10 to 20 parts of ultrapure water. The invention further discloses a preparation method and application of the cleaning fluid. The compound corrosion inhibitor is composed of an amino alcohol corrosion inhibitor and a polyhydroxy corrosion inhibitor, and has N and O polar groups with large electronegativity and C and H non-polar groups, on one hand, N and O with large electronegativity in the polar groups contain lone pair electrons, and the lone pair electrons interact with metal, so that the metal corrosion resistance is improved; therefore, a protective barrier is formed between metal and alloy surfaces and a corrosive medium, and the purpose of retarding metal corrosion is achieved. And on the other hand, the non-polar groups are closely arranged on the metal surface to form a hydrophobic protective film, so that transfer of charges or substances related to corrosion reaction is hindered, and the corrosion reaction is inhibited.

The invention discloses a terahertz superconducting biochemical detection system and method, and belongs to the technical field of terahertz. According to the invention, the interference of environmental factors on terahertz signals can be effectively inhibited, the terahertz fine spectrum detection of biochemical molecules is realized under the condition of high spectrum resolution, and the real-time monitoring of the dynamic process of biochemical reaction is completed under the condition of high time resolution. As the superconductive mixer has extremely high sensitivity, notable noise can be introduced into the system by negligible structure reflection in the traditional system. Therefore, the invention designs a sample bearing device formed by integrating a non-polar material supporting plate and a black body wave-absorbing structure, and a parasitic signal absorbing structure based on a black body material is arranged at a key position of an optical path, so that secondary reflection and scattering caused by a metal bracket and a silicon material can be effectively inhibited; terahertz waves in a non-sample path are absorbed, so that structural noise is eliminated from the source, and the high-precision detection capability of the system is guaranteed.

The present invention belongs to the field of analytical chemistry, and relates to a fluorocarbon functionalized MXene-based material, preparation and detection method for detecting plant viruses. The composite material includes a magnetic MXene composite structure, a polydopamine layer coated on the surface of the magnetic MXene composite structure, and a fluorocarbon compound attached to the surface of the polydopamine layer. The MXene layered matrix and magnetic nanoparticles attached to the MXene layered matrix constitute the magnetic MXene composite structure, and the fluorocarbon compound includes a surfactant with a fluorocarbon chain as a non-polar group. When the composite material is used to detect plant virus RNA, it can fully enrich and extract plant virus RNA and improve detection accuracy.

The invention relates to the technical field of semiconductor devices, in particular to a non-polar a-surface gallium nitride epitaxial structure and a preparation method thereof. After an r-surface sapphire substrate and few layers of graphene are provided, the few layers of graphene are transferred to a growth surface of the substrate, the few layers of graphene are attached to the growth surface, and the epitaxial substrate is prepared. The area ratio of the wrinkles on the surface of the few layers of graphene in the epitaxial substrate is less than or equal to 1%, and the maximum thickness is any one of 0.3-0.7 nm. And performing metal organic compound chemical vapor deposition on the surface of the epitaxial substrate to obtain the non-polar a-surface gallium nitride epitaxial structure. The problem of lattice mismatch between the substrate and the gallium nitride epitaxial layer obtained through epitaxy is solved through the few layers of graphene, it is guaranteed that electrostatic potential of the substrate can penetrate through the few layers of graphene to act on the epitaxial layer, local stress or gaps caused by wrinkles are reduced, and improvement of the quality of the epitaxial layer is facilitated.

The invention provides a colloidal atomic layer deposition method for a wurtzite Zn-based nanosheet non-polar surface, and belongs to the technical field of chemical engineering. The zinc oleate ligand exchanges the original oleylamine ligand, the zinc oleate is deposited on a non-polar surface to form a Zn < 2 + >-rich polar surface, and then anion deposition is performed, so that epitaxial growth of a homogeneous or heterogeneous material in the thickness direction of the oil-soluble Zn-based nanosheet is realized, and the thickness of the Zn-based nanosheet is increased or a core-shell structure is constructed. The optical property of the Zn-based nanosheet is regulated and controlled by increasing the thickness and constructing the core-shell structure. According to the method, the problem that epitaxial growth in the thickness direction is difficult to realize on the non-polar surface of the nanosheet in the traditional colloid atomic layer deposition is solved.

The invention discloses a preparation method of an ultraviolet curing antistatic coating with a phase separation characteristic. The preparation method comprises the following steps: providing an antistatic coating which comprises a prepolymer, an ultraviolet initiator, a modified carbon nanotube and a diluent; the surface of the modified carbon nanotube is provided with a plurality of non-polar photosensitive groups, when the photosensitive groups are irradiated by ultraviolet light, the photosensitive groups are converted into polar groups, and the diluent is a non-polar system; a liquid layer is formed through coating, a precursor layer is formed through drying, and the diluent still exists in the precursor layer; performing ultraviolet irradiation to cure the prepolymer into a film, and synchronously converting the surface polarity state of the modified carbon nanotube; and thoroughly removing the diluent to obtain the ultraviolet curing antistatic coating. According to the antistatic coating, under the condition of the same amount of the carbon nanotubes, as the carbon nanotubes are bundled to form a net, the conduction resistance between the carbon nanotubes is greatly reduced to form a smooth conduction network, so that the antistatic performance can be obviously improved.

The present invention discloses a quantum dot transfer method and a QLED preparation method, the transfer method comprising: water treatment and heat treatment of a first quantum dot to obtain a second quantum dot that is insoluble in polar and non-polar solvents; wherein the first quantum dot has a first ligand and the second quantum dot has a second ligand; the first quantum dot is made into a first film, and the second quantum dot is made into a second film; the second film is dipped for the first time by a transfer head, and the first film is dipped for the second time after the first dipping is completed; and the substrate to be transferred is printed using the transfer head dipped with the first film and the second film. The present invention dips two quantum dots with ligands of different properties onto the transfer head at the same time, so that the process steps required for transferring different quantum dots can be reduced, providing a simpler method for printing QLED-inverted QLED or multi-color QLED layers, and at the same time reducing the cost of QLED printing.

The application discloses an independent mesa structure non-polar surface micro light emitting diode (Micro-LED) and a preparation method thereof, and full relaxation of an epitaxial structure is realized based on selective epitaxy and lateral epitaxy, so that generation of defects in an epitaxial layer can be effectively inhibited. Meanwhile, independent quantum wells and other Micro-LED functional layers are grown on independent mesas, Micro-LEDs can be prepared without quantum well etching damage, quantum well etching damage and non-radiative recombination caused additionally caused by reduction of LED size through a process etching in a traditional scheme are eliminated, and the efficiency of the Micro-LEDs is effectively improved. The application provides a new structure and method for preparing Micro-LEDs, and is favorable for promoting commercial application of the Micro-LEDs.

The invention discloses a hexamethylenetetramine crystal material and a preparation method thereof, and belongs to the technical field of material preparation. Hexamethylenetetramine, cyanide and molybdenum-oxygen isopolyacid are used as raw materials for self-assembly, and a natural evaporation method is adopted to synthesize a new carbon sequestration material, namely a hexamethylenetetramine crystal material [C6H12N4] [CH2O] [K (H2O)] {[beta-Mo8O26] 0.5}, and the crystal material is a P-1 non-polar space group. Structural analysis shows that molecules of the hexamethylenetetramine crystal material prepared by the invention are connected in ac and ab planes through K... O acting forces to form two one-dimensional chains respectively, and the temperature rise causes chain structures in the a-axis and b-axis directions to stretch and contract, so that the change of the electrical property of the material is influenced, and the material has a good application prospect. And a pair of obvious reversible redox peaks are shown in the potential range of 0.5-1.2 V. The graphene has a good application prospect in the aspect of electricity.

The invention belongs to the technical field of preparation of perovskite quantum dots, and particularly relates to a method for preparing perovskite quantum dots by utilizing nano instantaneous precipitation. The method for preparing the perovskite quantum dots by utilizing the nano instantaneous precipitation comprises the following steps: jointly dispersing A-site cation halide, B-site metal ion halide and ligand of the ABX3 type perovskite quantum dots in a polar solvent to obtain a precursor solution; and performing jet mixing on the precursor solution and a non-polar anti-solvent to trigger turbulent mixing, and staying to obtain the perovskite quantum dots. The preparation method provided by the invention can be carried out at normal temperature and normal pressure, high-temperature heating and inert atmosphere protection are not needed, harsh reaction conditions of a hot injection method are avoided, and the process complexity and the energy consumption cost are greatly reduced. According to the method, millisecond-level efficient mixing is achieved through the jet mixing technology, the mixing time is shortened by 2-3 orders of magnitude compared with that of a traditional method, instantaneous uniform supersaturation of the precursor is ensured, and therefore the perovskite quantum dot product narrow in particle size distribution and excellent in optical performance is obtained.