29 results about "Non polar" patented technology

The present disclosure relates to the technical field of film material, and particularly to a polymeric polyphenol-modified polymer film, a preparation method thereof and a metallized polymer film. According to the present disclosure, corona treatment is performed to a surface of a polymer layer, so that a polar modifying liquid can uniformly coat the surface of the polymer layer, thereby forming a modification layer tightly combined with the polymer layer. Thus, the low-polarity polymer layer surface can be imparted with a durable high polarity. Consequently, the polymer layer is capable of being stably and tightly bonded to a material layer with high polarity and high surface tension, such as a metal layer, for a long period of time, effectively broadening the application scenarios for non-polar polymer substrate layers. By controlling the concentrations of the polyphenolic compound and the cross-linking agent in the modifying liquid, the modification layer formed by a cross-linking reaction can have a suitable cross-linking density and an adequate number of hydroxyl groups, thereby further effectively and stably enhancing the long-term polarity and surface tension of the polymer layer. The preparation method is simple and easy to operate, cost-effective, efficient, and easy to scale up.

The invention provides a piezoelectric film preparation method based on femtosecond laser processing and a piezoelectric energy collector, and relates to the technical field of piezoelectric equipment. NaNbO3amp is irradiated by femtosecond laser; on the surface of the P (VDF-TrFE) composite film, when femtosecond laser irradiates the surface of a substance, light and the substance can interact with each other, non-polar alpha-phase disordered molecular chains in a non-polarized state are rearranged under the rapid and short-time driving force of femtosecond laser polarization, the influence of disordered factors such as thermal motion is overcome, ordered arrangement is achieved, a beta-phase structure with dipole moment is formed, and the surface of the P (VDF-TrFE) composite film is formed. The NaNbO3amp is enhanced; the P (VDF-TrFE) composite film has the advantages of good piezoelectric property, low operation requirements, high processing efficiency and reduced production cost.

The application belongs to the technical field of perovskite quantum dot preparation, and particularly relates to a method for preparing perovskite quantum dots by using nano transient precipitation. The method comprises the following steps: dispersing A-site cation halide, B-site metal ion halide and a ligand of ABX3 type perovskite quantum dots in a polar solvent to obtain a precursor solution; and mixing the precursor solution and a non-polar anti-solvent by jet flow mixing to induce turbulent mixing, and obtaining the perovskite quantum dots after stopping. The preparation method provided by the application can be carried out at normal temperature and pressure, without the need for high-temperature heating and inert atmosphere protection, thereby avoiding the harsh reaction conditions of the hot injection method, and greatly reducing the process complexity and energy consumption cost. The jet flow mixing technology is used to realize efficient mixing in milliseconds, and the mixing time is shortened by 2-3 orders of magnitude compared with the traditional method, so that the transient uniform supersaturation of the precursor is ensured, thereby obtaining perovskite quantum dot products with narrow particle size distribution and excellent optical performance.

The invention provides a non-polar gallium nitride device and a manufacturing method thereof.The non-polar gallium nitride device comprises a diamond layer, a non-polar gallium nitride layer, a passivation layer, a first electrode and a second electrode which are sequentially stacked, the first electrode and the second electrode penetrate through the passivation layer to the non-polar gallium nitride layer, the passivation layer is arranged on the surface of the non-polar gallium nitride layer, and the second electrode is arranged on the surface of the non-polar gallium nitride layer. The method is used for suppressing surface electric leakage and trap effects, thereby improving the performance of the non-polar gallium nitride device. A heterogeneous interface is formed between the diamond layer and the non-polar gallium nitride layer, and the interface state concentration of the heterogeneous interface meets the low interface state concentration condition, that is, the interface state concentration of the heterogeneous interface between the non-polar gallium nitride layer and the diamond layer is relatively low, so that the radio frequency loss can be reduced, and efficient heat dissipation can be realized by utilizing the diamond layer; the heat dissipation performance of the non-polar gallium nitride device is improved, and finally the performance of the non-polar gallium nitride device is improved.

The present invention relates to the field of semiconductor device technology, and in particular to a non-polar a-plane gallium nitride epitaxial structure and a preparation method thereof. After providing an r-plane sapphire substrate and few-layer graphene, the few-layer graphene is transferred to the growth surface of the substrate, and the few-layer graphene is bonded to the growth surface to prepare an epitaxial substrate. The area of ​​wrinkles on the surface of the few-layer graphene in the epitaxial substrate accounts for less than or equal to 1%, and the maximum thickness is any value between 0.3nm and 0.7nm. Metal organic compound chemical vapor deposition is performed on the surface of the epitaxial substrate to obtain a non-polar a-plane gallium nitride epitaxial structure. The few-layer graphene reduces the lattice mismatch problem between the substrate and the gallium nitride epitaxial layer obtained by epitaxy, ensures that the electrostatic potential of the substrate can act on the epitaxial layer through the few-layer graphene, and also reduces the local stress or gaps caused by the wrinkles, which helps to improve the quality of the epitaxial layer.

The invention relates to the technical field of wastewater treatment, and particularly discloses a copper-based MOF material for adsorbing perchlorate in wastewater and a preparation method of the copper-based MOF material for adsorbing the perchlorate in the wastewater aiming at the problem of poor selective adsorbability when an existing cationic metal-based MOF material is used for adsorbing and removing impurities from the perchlorate in the wastewater. The copper-based MOF material comprises a soft acid metal center, a non-polar polydentate nitrogen ligand and R-sulfonic acid counter ions, and the soft acid metal center and the non-polar polydentate nitrogen ligand form a negatively charged hydrophobic porous skeleton. A hydrophobic porous skeleton is constructed through a soft acid metal center and a non-polar multidentate nitrogen ligand, specific capture of ClO4 <-> with a large ionic radius and strong hydrophobicity is realized, the synthesis process is simple, the chemical structure is stable, the adsorption capacity is large, environment friendliness is realized, and the adsorbent has a remarkable adsorption effect when being used for adsorbing and removing ClO4 <-> and oxygen-containing anions with similar structures in water.

The application discloses a symmetrical gallium nitride (GaN) based high electron mobility transistor (HEMT) structure and a preparation method thereof. x Ga 1‑x The HEMT structure comprises a GaN layer with a non-polar face as an upward crystal face, a mask layer, a GaN stereoscopic triangular island, an Al The application utilizes selected area epitaxy and combines lateral epitaxy to obtain a GaN island with a stereoscopic structure, the GaN island naturally forms a left-right symmetrical structure due to its crystal properties, and the HEMT prepared based on the feature has atom level consistency, and the left-right symmetrical semi-polar face AlGaN / GaN heterojunction can generate a two-dimensional electron gas (2DEG) with a convenient control concentration, realizes high-quality, high-performance and high-consistency paired GaN based HEMT, and can be applied to mirror current sources, differential amplification and other circuits, and has better consistency and stability compared with traditional devices.

The invention discloses a preparation method and application of a flexible porous membrane capable of identifying polar and non-polar gases, and the preparation method comprises the following steps: step 1, uniformly stirring and mixing a prepolymer and a curing agent, adding a mixture of carbon black and a sacrificial template, ultrasonically and uniformly mixing, vacuumizing to remove bubbles, and heating and curing to obtain a compound of a membrane and the sacrificial template; 2, removing the sacrificial template in the compound by using a template remover, cleaning by using a cleaning agent, and drying to obtain a flexible porous PDMS substrate; and step 3, placing the flexible porous PDMS substrate in a plasma cleaning instrument for radio frequency treatment, placing the flexible porous PDMS substrate subjected to radio frequency treatment in a cross-linking agent-containing solvent, standing in a dark place, cleaning, and drying to obtain the flexible porous membrane. According to the preparation method, carbon powder is introduced to enhance an electric signal after being in contact with gas, molecular chains containing F / H are connected into the surface and holes of the membrane through self-assembly, and due to the difference of F / H electronegativity, corresponding electric signals are presented for gas molecules with different polarities for people to distinguish the gas.

The invention discloses a non-polar heat-stable light conversion adhesive film and a preparation method thereof. The preparation method comprises the following steps: dissolving alkane amine, alkane acid and a light conversion agent in a reaction solvent to obtain a mixed solution; adding a silane coupling agent into the mixed solution, stirring for a period of time at 45-55 DEG C, heating to 115-125 DEG C, keeping for a period of time, then adding POE resin, stirring and fully mixing at 95-105 DEG C, and then drying to obtain the non-polar heat-stable light conversion adhesive film. The light conversion adhesive film prepared by the invention can block the damage of ultraviolet photons to a photovoltaic cell, improve the stability of the cell, effectively utilize high-energy photons and improve the efficiency of a photovoltaic module, and has stability at a high temperature of 120 DEG C.

The invention relates to the technical field of ferroelectric polymers, in particular to an enhanced ferroelectric polymer film based on X-ray irradiation, a preparation method of the enhanced ferroelectric polymer film and a sensor, and the preparation method of the enhanced ferroelectric polymer film comprises the following steps: providing a ferroelectric polymer film, and carrying out polarization treatment on the ferroelectric polymer film to obtain a pretreated film; and performing X-ray irradiation on the pretreated film to obtain the enhanced ferroelectric polymer film. Polarization treatment is utilized to induce orientation ordered arrangement of polar groups in a polymer molecular chain to form a beta-phase crystal structure, so that piezoelectric and pyroelectric properties are improved; then injecting energy through X-ray irradiation to promote conversion of a non-polar alpha phase to a polar beta phase, and inducing crystal rearrangement to enhance coupling between molecular chains; therefore, the polar phase content of the ferroelectric polymer film is remarkably increased under the synergistic effect of polarization treatment and X-ray irradiation, the piezoelectric coefficient and the pyroelectric coefficient are further enhanced, and finally the sensitivity of the sensor is improved.

The present invention relates to an electrowetting optical element comprising: a first electrode layer stack comprising a substrate and a first electrode layer; a second electrode layer stack including a substrate and a second electrode layer; an accommodation space formed between the first and second electrode layer stacks; one or more cell walls extending between the first and second electrode stacks for defining a side of the accommodation space forming a cell; the accommodating space comprises a polar liquid and a non-polar liquid, and the polar liquid and the non-polar liquid are not dissolved with each other; wherein the first and second electrode layers are configured to apply a voltage between the electrodes to reconfigure the polar liquid relative to the non-polar liquid; wherein the first electrode layer stack further comprises an insulating layer disposed between the first electrode layer and the receiving space, forming an interface with the receiving space, and wherein the insulating layer comprises a first and a second group of polymers, the first group of polymers comprises functional hydrophilic chemical groups configured to form covalent bonds with the first electrode layer stack, and the second group comprises polymers without functional hydrophilic chemical groups, and wherein the first and second groups of polymers are configured as an entangled polymer network in the insulating layer.

The application provides a micro chromatographic column for light hydrocarbon separation and a preparation method thereof, and the micro chromatographic column is prepared from FG and HKUST-1 to obtain FG-HKUST-1 stationary phase, and the FG-HKUST-1 stationary phase is non-polar material; in addition to having a screening effect on C1-C4 light hydrocarbon, further, there is a dispersion force between the non-polar FG-HKUST-1 stationary phase and non-polar light hydrocarbon, such as non-polar methane and ethane, so that the non-polar FG-HKUST-1 stationary phase has strong retention capacity for non-polar light hydrocarbon, thereby the resolution of C1-C4 light hydrocarbon can be improved, especially for light hydrocarbon with low resolution, large concentration difference and similar properties, such as methane and ethane, so that the application can meet the requirements of qualitative and quantitative analysis and detection of light hydrocarbon.

The invention relates to a cleaning solution for semiconductor wafers after amine washing, which comprises the following components in parts by weight: 50-80 parts of environment-friendly organic solvent; 0.5 to 3 parts of an amino alcohol corrosion inhibitor; 1-5 parts of a polyhydroxy corrosion inhibitor; and 10 to 20 parts of ultrapure water. The invention further discloses a preparation method and application of the cleaning fluid. The compound corrosion inhibitor is composed of an amino alcohol corrosion inhibitor and a polyhydroxy corrosion inhibitor, and has N and O polar groups with large electronegativity and C and H non-polar groups, on one hand, N and O with large electronegativity in the polar groups contain lone pair electrons, and the lone pair electrons interact with metal, so that the metal corrosion resistance is improved; therefore, a protective barrier is formed between metal and alloy surfaces and a corrosive medium, and the purpose of retarding metal corrosion is achieved. And on the other hand, the non-polar groups are closely arranged on the metal surface to form a hydrophobic protective film, so that transfer of charges or substances related to corrosion reaction is hindered, and the corrosion reaction is inhibited.

The invention discloses a terahertz superconducting biochemical detection system and method, and belongs to the technical field of terahertz. According to the invention, the interference of environmental factors on terahertz signals can be effectively inhibited, the terahertz fine spectrum detection of biochemical molecules is realized under the condition of high spectrum resolution, and the real-time monitoring of the dynamic process of biochemical reaction is completed under the condition of high time resolution. As the superconductive mixer has extremely high sensitivity, notable noise can be introduced into the system by negligible structure reflection in the traditional system. Therefore, the invention designs a sample bearing device formed by integrating a non-polar material supporting plate and a black body wave-absorbing structure, and a parasitic signal absorbing structure based on a black body material is arranged at a key position of an optical path, so that secondary reflection and scattering caused by a metal bracket and a silicon material can be effectively inhibited; terahertz waves in a non-sample path are absorbed, so that structural noise is eliminated from the source, and the high-precision detection capability of the system is guaranteed.

The invention relates to the technical field of semiconductor devices, in particular to a non-polar a-surface gallium nitride epitaxial structure and a preparation method thereof. After an r-surface sapphire substrate and few layers of graphene are provided, the few layers of graphene are transferred to a growth surface of the substrate, the few layers of graphene are attached to the growth surface, and the epitaxial substrate is prepared. The area ratio of the wrinkles on the surface of the few layers of graphene in the epitaxial substrate is less than or equal to 1%, and the maximum thickness is any one of 0.3-0.7 nm. And performing metal organic compound chemical vapor deposition on the surface of the epitaxial substrate to obtain the non-polar a-surface gallium nitride epitaxial structure. The problem of lattice mismatch between the substrate and the gallium nitride epitaxial layer obtained through epitaxy is solved through the few layers of graphene, it is guaranteed that electrostatic potential of the substrate can penetrate through the few layers of graphene to act on the epitaxial layer, local stress or gaps caused by wrinkles are reduced, and improvement of the quality of the epitaxial layer is facilitated.

The invention provides a colloidal atomic layer deposition method for a wurtzite Zn-based nanosheet non-polar surface, and belongs to the technical field of chemical engineering. The zinc oleate ligand exchanges the original oleylamine ligand, the zinc oleate is deposited on a non-polar surface to form a Zn < 2 + >-rich polar surface, and then anion deposition is performed, so that epitaxial growth of a homogeneous or heterogeneous material in the thickness direction of the oil-soluble Zn-based nanosheet is realized, and the thickness of the Zn-based nanosheet is increased or a core-shell structure is constructed. The optical property of the Zn-based nanosheet is regulated and controlled by increasing the thickness and constructing the core-shell structure. According to the method, the problem that epitaxial growth in the thickness direction is difficult to realize on the non-polar surface of the nanosheet in the traditional colloid atomic layer deposition is solved.

The application discloses an independent mesa structure non-polar surface micro light emitting diode (Micro-LED) and a preparation method thereof, and full relaxation of an epitaxial structure is realized based on selective epitaxy and lateral epitaxy, so that generation of defects in an epitaxial layer can be effectively inhibited. Meanwhile, independent quantum wells and other Micro-LED functional layers are grown on independent mesas, Micro-LEDs can be prepared without quantum well etching damage, quantum well etching damage and non-radiative recombination caused additionally caused by reduction of LED size through a process etching in a traditional scheme are eliminated, and the efficiency of the Micro-LEDs is effectively improved. The application provides a new structure and method for preparing Micro-LEDs, and is favorable for promoting commercial application of the Micro-LEDs.

The invention belongs to the technical field of preparation of perovskite quantum dots, and particularly relates to a method for preparing perovskite quantum dots by utilizing nano instantaneous precipitation. The method for preparing the perovskite quantum dots by utilizing the nano instantaneous precipitation comprises the following steps: jointly dispersing A-site cation halide, B-site metal ion halide and ligand of the ABX3 type perovskite quantum dots in a polar solvent to obtain a precursor solution; and performing jet mixing on the precursor solution and a non-polar anti-solvent to trigger turbulent mixing, and staying to obtain the perovskite quantum dots. The preparation method provided by the invention can be carried out at normal temperature and normal pressure, high-temperature heating and inert atmosphere protection are not needed, harsh reaction conditions of a hot injection method are avoided, and the process complexity and the energy consumption cost are greatly reduced. According to the method, millisecond-level efficient mixing is achieved through the jet mixing technology, the mixing time is shortened by 2-3 orders of magnitude compared with that of a traditional method, instantaneous uniform supersaturation of the precursor is ensured, and therefore the perovskite quantum dot product narrow in particle size distribution and excellent in optical performance is obtained.

The invention provides an EVA / polyolefin film and a preparation method thereof, and relates to the technical field of polyolefin films. The EVA / polyolefin film comprises a surface layer and a core layer, the surface layer comprises EVA and magnetic master batch, and the core layer comprises polyolefin; and the magnetic master batch comprises Fe3O4 and EVA (Ethylene Vinyl Acetate). The magnetic master batch is added into the EVA layer, so that polar groups on EVA are combined with magnetic particles, and the magnetic particles are induced to move through an external magnetic field, so that non-polar chain segments of the EVA material at the interface of the EVA and the polyolefin material are aggregated, and the acting force at the interface of the EVA and the polyolefin material is enhanced.

This invention discloses a cross-linked film-forming long-lasting antistatic insulating cleaning agent and its preparation method, comprising the following components in parts by weight: 50-80 parts of basic cleaning solvent; 10-25 parts of film-forming resin; 3-10 parts of reactive antistatic agent; 0.1-0.8 parts of cross-linking catalyst; 0-5 parts of penetration aid; 0.5-3 parts of dispersion stabilizer; and 0.1-0.5 parts of leveling agent. This invention uses modified alcohol / ester compounds as the basic cleaning solvent, whose molecular structure contains both polar and non-polar groups, exhibiting excellent dissolving ability for both polar and non-polar dirt.

A method for improving structural stability of colloidal quantum dots comprises the following steps: dissolving a metal salt into a polar phase solution to obtain a metal salt ligand solution, and dissolving a V-VI chalcogenide into n-butylamine to obtain a chalcogenide ligand solution; injecting the chalcogenide ligand solution into the metal salt ligand solution, and rapidly oscillating to fully react to synthesize a small-size metal chalcogenide monomer, so as to obtain a monomer ligand solution; and mixing the quantum dots dissolved in the non-polar phase solution with a monomer ligand solution, and carrying out phase transfer ligand exchange to obtain the quantum dot ink with a stable structure in the polar phase. According to the invention, a small-size monomer is synthesized in a ligand solution, and in a phase transfer process, the small-size monomer is dissolved and grows on the surface of a target quantum dot by using an Ostwald mechanism, so that the size focusing of the quantum dot is realized, the structure of the quantum dot is kept stable, and the long-time colloid stability of the quantum dot ink in a polar phase is realized; the method can be applied to quantum dot materials such as PbX, CdX (X = S, Se) and the like.

The application discloses an active region structure of a non-polar plane GaN-based terahertz quantum cascade laser, characterized in that the active region has multiple periods of three-well structure, wherein the potential well layer is GaN and the potential barrier layer is AlGaN; and a corresponding non-polar plane GaN-based terahertz quantum cascade laser. An active region structure of a two-well structure and a laser are also disclosed. The application discloses two active region structures of a three-well resonant phonon and a two-well phonon scattering injection terahertz quantum cascade laser based on a non-polar plane GaN, when the doping is 6*10 10 cm ‑2 , the peak gain of the two structures at 10K is 90.1 and 91.3 cm ‑1 , respectively, at 300K, the peak gain of 41.8 and 44.2 cm ‑ 1 is obtained at 8.2 and 7.7 terahertz, which is higher than the calculated double-metal waveguide loss. The overall results show that at room temperature, a GaN-based terahertz quantum cascade laser is possible at about 8 terahertz.

An electrophoretic medium containing a plurality of charged pigment particles, a charge control agent, and a non-polar liquid is disclosed. The charge control agent (CCA) has a molecular structure comprising a quaternary ammonium functional group or an imidazolium cation, a hydrophobic tail group, and a counterion, the counterion being an anion, the anion being a conjugate base of an acid, the acid having a pKa less than or equal to -2.5. The charge control agent (CCA) has the following Formula IX, wherein R 11 is a hydrophobic moiety comprising a functional group selected from the group consisting of poly(hydroxystearic acid), poly(ricinoleic acid), and poly(isobutylene), and wherein the counterion is trifluoromethanesulfonate.

This invention discloses an aqueous binder for lithium-ion battery cathodes and its preparation method. The binder comprises an emulsion dispersion formed from a multi-component copolymer polymerized from acrylic acid and its derivatives. The multi-component copolymer forms an ABC three-segment structure according to the polarity of its side groups and the polymerization process, representing strongly polar, weakly polar, and non-polar segments, respectively. The strongly polar segments are polymerized from monomers of acrylic acid or acrylic acid derivatives with strongly polar groups, or from acrylates. The weakly polar segments are polymerized from acrylates and their derivatives with weakly polar groups. The non-polar segments are polymerized from acrylates and their derivatives with non-polar groups. This invention synthesizes strongly polar, weakly polar, and non-polar segments separately. The resulting binder emulsion exhibits good mechanical stability and does not exhibit demulsification or agglomeration during dispersion. It also has low surface tension, which is more conducive to the dispersion of conductive agents and cathode materials, significantly improving dispersion efficiency and film-forming properties.

The invention relates to the technical field of color master batches special for COC, in particular to a color master batch special for high-dispersion COC and a preparation method of the color master batch, and the color master batch is prepared from the following raw materials in percentage by weight: 3.25% of carbon black, 0.325% of polyester dispersant and 96.425% of COC carrier resin. A polar group of the AKN-2266 powder and a hydroxyl group on the surface of the carbon black form chemical bonding, meanwhile, a non-polar group and a COC molecular chain are entangled, and under the high-rotating-speed shearing action of 500 rpm, carbon black aggregate is scattered into monodisperse particles, according to the raw material provided by the invention, under the temperature gradient of a double-screw extruder and the high-rotating-speed parameter of 500 rpm, the melt viscosity fluctuation is only 3.2% in the extrusion process, and the melt viscosity fluctuation is only 3.2%; the particle size deviation of the extruded color master batch is smaller than or equal to 0.2 mm, the uniformity reaches 97% and is improved by 12% compared with the prior art, the thermal stability of the material is improved, the situation that the color master batch is applied to injection molding in the later period, the color master batch is decomposed to generate impurities influencing a finished product is prevented, meanwhile, the color master batch does not have obvious aggregates, and the coloring rate of a COC base material is greatly improved.

This invention belongs to the field of polymer materials, specifically relating to an antistatic single-walled carbon nanotube (SHU) polyetheretherketone (PEEK) composite material and its preparation method. This invention uses chitosan to modify the surface of PEEK, introducing a large number of active polar groups such as hydroxyl and amino groups, transforming its inert nonpolar surface into a highly active polar surface. This significantly improves the wettability and interfacial bonding between PEEK and SHU, effectively solving problems such as weak interfacial bonding, easy debonding, and unstable conductivity in SHU-PEK composite materials. Furthermore, by modifying SHU with chloromethylmethyldiethoxysilane, the hydroxyl groups generated from its hydrolysis can undergo a condensation reaction with the hydroxyl groups on the surface of chitosan-modified PEEK, achieving a stable chemical bond between the two. This allows the conductive network of SHU to be anchored on the PEEK surface, greatly improving the stability of the antistatic properties of the SHU-PEK composite material.

The invention relates to an electron beam lithography patterning method for an HgTe zero-dimensional semiconductor, and belongs to the field of semiconductor device preparation. According to the method, a non-polar ligand orthogonal to PMMA is selected to modify an HgTe zero-dimensional semiconductor, so that the HgTe zero-dimensional semiconductor is kept stable in an electron beam lithography process and is not damaged by a polar solvent, then high-precision patterning is realized through a stripping process, and solid ligand exchange is performed to optimize photoelectric properties. According to the method, the problems that in a traditional method, the HgTe zero-dimensional semiconductor is prone to damage and the performance is degraded in the micro-nano machining process are solved, excellent photoelectric characteristics are kept while high-precision patterning is achieved, and an effective technical path is provided for preparation of high-performance devices such as infrared detectors and quantum communication devices.