82 results about "Access resistance" patented technology

The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.

An electronic semiconductor device comprising a semiconductor base deposited on a semiconductor substrate by means of molecular beam epitaxy and source, drain and gate disposed on the base in a spaced relationghip to each other, the source and the drain comprising Pd/barrier/Au layers with the palladium layer being in contact with the device. The device is fabricated conventionally except the heat treating is at above about 170° C. for ¼-10 hours sufficient for the palladium layer to react with the base yielding reduced contact and access resistances and a narrower spacing between source and drain.

A normally-off operation type HEMT device excellent in characteristics can be realized. A two-dimensional electron gas region is formed in a periphery of a hetero-junction interface of a base layer and a barrier layer, so that access resistance in an access portion, that is, between a drain and a gate and between a gate and a source is sufficiently lowered, and at the same time, a P-type region is formed immediately under the gate. This realizes a normally-off type HEMT device having a low on-resistance. Further, when a film thickness of an insulating layer is defined as t (nm) and a relative permittivity of a substance forming the insulating layer is defined as k, a threshold voltage as high as +3 V or more can be attained by satisfying k/t≦0.85 (nm⁻¹).

A novel semiconductor power transistor is presented. The semiconductor structure is simple and is based on a Hetero-structure FET structure, where the access regions have been eliminated so as to effectively obtain a lower specific on-resistance, and a higher control on the transport properties of the device, drastically reducing the dispersion phenomena associated with these regions. The present invention can be realized both with polar and non-polar (or semi-polar) materials, without requiring delta doping implantation. It can be fabricated as an enhancement or depletion mode device with much higher control on the device threshold voltage with respect to state-of-the-art HFET devices, and achieving superior RF switching performance. Furthermore, due to the absence of access regions, enhancement mode devices can be realized without discontinuity in the channel conductivity, which results in an even lower on-resistance.

A nanosheet transistor device having reduced access resistance is fabricated by recessing channel nanosheets and replacing the channel material with epitaxially grown doped extension regions. Sacrificial semiconductor layers between the channel nanosheets are selectively removed without damaging source/drain regions epitaxially grown on the extension regions. The sacrificial semiconductor layers are replaced by gate dielectric and gate metal layers.

The invention relates to a multipath MPPT input photovoltaic inverter insulation impedance detection device which is connected with a multipath MPPT input photovoltaic inverter connected with a photovoltaic system and used for detecting the ground insulation impedance value of the photovoltaic system. The multipath MPPT input photovoltaic inverter is connected with the positive electrodes PVn+ and the connected negative electrodes PV- of n solar cell panels in the photovoltaic system. The ground insulation impedance of each positive electrode PVn+ is Xn, and the ground insulation impedance of each negative electrode is Xn+1, wherein n is a positive integer greater than or equal to 2. The insulation impedance detection device comprises at least two paths of sub-circuits which can be independently on and off so as to change access resistance. At least two paths of sub-circuits are respectively connected between the positive electrodes PVn+ and the ground and between the negative electrodes PV- and the ground of the n solar cell panels in the photovoltaic system. The circuit is enabled to be in different states via on/off of each sub-circuit so that the ground insulation resistance value can be accurately detected based on different states of the circuit, and precision is relatively high.

The invention discloses a doubly-fed asynchronous generator set low voltage ride through control system and a control method thereof. The system comprises a doubly-fed asynchronous generator, a converter, a current detection module, a Crowbar circuit control module and a Crowbar module, wherein the doubly-fed asynchronous generator is connected with the electrical network, the converter is arranged between the doubly-fed asynchronous generator and the electrical network, and the current detection module, the Crowbar circuit control module and the Crowbar module are sequentially connected and are then arranged between the converter and the doubly-fed asynchronous generator. According to the system, the current change rate is calculated by setting the Crowbar circuit control module, the current peak value and the peak value arrival time are predicted, the proper time and the optimum resistance value for access of a Crowbar circuit are acquired, the optimum access resistance value and the access time of the Crowbar circuit are guaranteed according to low voltage faults in different levels, the recovery time of the low voltage faults is effectively ameliorated, energy consumption is reduced, and low voltage ride through capability of the doubly-fed asynchronous generator set is greatly improved.

The invention provides a control method of a mobile terminal and a mobile terminal. The method comprises: obtaining an access resistance value corresponding to an access internal resistance at a power supply access of a mobile terminal; determining a current value corresponding to safe operation of the mobile terminal according to the access resistance value and obtaining a current practical working current value of the mobile terminal; and according to the current value corresponding to safe operation of the mobile terminal as well as the practical working current value, carrying out switching controlling on at least one application program operated currently by the mobile terminal. According to the invention, the mobile terminal determines the working current corresponding to the safe operation of the mobile terminal by detecting the access internal resistance at the power supply access and the operation of the parts of application programs of the mobile terminal is restricted to meet a requirement that the practical working current value of the mobile terminal is lower than the current value corresponding to safe operation of the mobile terminal, so that an automatic shutdown or restarting problem caused during the heavy-current application program operation of the mobile terminal can be solved and the experience of using the mobile terminal by the user can be guaranteed.

A mainboard power supply circuit is provided, which is used for providing voltage for the mainboard when the mainboard exceeds frequency, and comprises a south bridge chip and a voltage transversion circuit, the voltage transversion circuit comprises an output end, the south bridge chip comprises at least one universal input output port, the each universal input output port is connected to the voltage transversion circuit through a resistance. Compared with the prior art, the mainboard power supply circuit controls output of the universal input output port through the controlling of a computer basic input output system, so as to control whether the resistance connected with the universal input output port is accessed into the voltage transversion circuit, the voltage transversion circuit can output different voltage at the output end according to the resistance value of the accessed resistance.

The invention discloses a power switching tube driving circuit applied to an electronic safety device. The circuit comprises a power supply input end, a power supply output end, a first power switching tube, a second power switching tube, an auxiliary power supply and a protection signal, wherein the drain electrode of the first power switching tube is connected with the anode of the power supply input end; the drain electrode of the second power switching tube is connected with the grid electrode of the first power switching tube; the auxiliary power supply is connected to the grid electrode of the first power switching tube by first access resistance; and the protection signal is connected with the grid electrode of the first power switching tube by second access resistance. The power switching tube driving circuit has the advantages of simple structure and reliable performance, is convenient to design, is convenient to control, is a N-channel power switching tube with wider variety and is an ideal circuit for high-end driving.

The invention discloses an operational amplifier circuit offset voltage calibration method, a device thereof and system and a computer readable storage medium, a compensation circuit is composed of a current calibration circuit and a resistance calibration circuit, and after a to-be-compensated voltage is determined according to a difference value between an actual offset voltage and an allowable offset voltage of a to-be-compensated amplifier circuit, the magnitude and direction of unit compensation current of a variable current source in a current calibration circuit of the compensation circuit are determined according to the magnitude and polarity of the to-be-compensated voltage, the access resistance of a resistance calibration circuit of the compensation circuit is determined according to the unit compensation current and the to-be-compensated voltage, repairing is carried out from the two angles of the access resistance and the current flowing through the access resistance, compared with a traditional binary system current compensation scheme which only adopts divider resistors to carry out trimming, the calibration means is more flexible, the number of the needed divider resistors is obviously reduced, namely, the area of a compensation circuit is reduced under the same compensation precision, higher compensation precision can be obtained, so that the linearity of offset voltage calibration is improved.

The invention provides a heterogeneous integrated structure of a two-dimensional material device and a GaN device and a preparation method. The two-dimensional material device and the GaN device are heterogeneously integrated on the same sapphire substrate, on and off of the GaN device are controlled through the two-dimensional material device, the performance of the overall heterogeneous integrated structure is improved, and the advantages of the GaN device are exerted; electric connection is achieved through interconnection electrodes, and the parasitic effect is reduced; in the two-dimensional material device, a two-dimensional material layer is used as a channel, a graphene layer is used as ohmic contact, and the problem of poor ohmic contact of the two-dimensional material device is solved; and a T-shaped grid electrode is used as a mask plate and a self-alignment process is carried out to form a second source electrode and a second drain electrode, so that the distances between the T-shaped grid electrode and the source electrode and between the T-shaped grid electrode and the drain electrode are shortened, the access resistance of the two-dimensional material device is reduced, and the performance of the two-dimensional material device is improved. According to the invention, the advantages of the GaN device can be fully exerted, and the performance of the whole heterogeneous integrated structure is improved.

A solid-state light source with built-in access resistance modulation is described. The light source can include an active region configured to emit electromagnetic radiation during operation of the light source. The active region can be formed at a p-n junction of a p-type side with a p-type contact and a n-type side with a n-type contact. The light source includes a control electrode configured to modulate an access resistance of an access region located on the p-type side and/or an access resistance of an access region located on the n-type side of the active region. The solid-state light source can be implemented in a circuit, which includes a voltage source that supplies a modulation voltage to the control electrode to modulate the access resistance(s).

A method for fabrication of vertical nanowire MOSFETs is considered using a gate-last process. The top ohmic electrode is first fabricated and may be used as a mask to form a gate recess using etching techniques. The gate is thereafter formed allowing a large degree in access resistance reduction.

The embodiment of the invention provides a headset detection circuit, a headset detection method and electronic equipment. The headset detection circuit comprises a headset seat, an electric control switch, a master control chip and a triode; the electric control switch is respectively connected with the headset seat, the master control chip and the triode; the master control chip is connected with the triode, wherein the master control chip is used for judging a headset type inserted into the headset seat according to a detected access resistance value between the master control chip and theheadset seat, and the master control chip sends a switch handover signal to the electric control switch to perform the switch handover according to the headset type, thereby realizing the matching ofthe headset inserted into the headset seat and the electronic equipment. Through the headset detection circuit disclosed by the embodiment of the invention, the headsets in various different types canbe compatible, the structure is simple, the practicability is strong, and the cost is low.

The invention provides a terminal resistor automatic matching circuit and method. The terminal resistance automatic matching circuit comprises a resistance network unit, a resistance control unit anda resistance value measuring unit, the resistance network unit is composed of M resistors connected in series, the M resistors are divided into a plurality of orders of magnitudes according to the resistance values, and each order of magnitude configures a resistor according to the mathematical law of 1, 2, 2 and 5; the resistance control unit is composed of M relays, and the M relays and the M resistors are correspondingly arranged in parallel; a corresponding resistor is connected/short-circuited by controlling disconnection/connection of the relay; the resistance measurement circuit comprises a test power supply interface and an ADC conversion circuit. wherein the test power supply interface and the resistor network unit integrally form a series loop, and the ADC conversion circuit is connected with a certain resistor in the M resistors in parallel and is used for measuring partial voltage on the resistor when a test power supply is connected so as to calculate whether the access resistance value of the terminal resistor is correct or not.

The invention relates to a method of series control voltage fine controlling a power source. The method is characterized of being suitable for a switch power source, and providing a shifting latch. Series transmission control signals are utilized to control the shifting latch to adjust access resistance values of a plurality of divider resistors at an output end of the switch power source so as to adjust output voltage of the switch power source. According to the method and the circuit, a concise low-cost scheme is adopted. The shifting latch is utilized to realize adjustment of the series signals on output voltage of the switch power source, and the method and the device have the advantages of being high in adjusting accuracy, stable in output voltage, and the like.

The invention provides a current transformer secondary side open circuit anticipation device comprising a shunting resistor module, a resistance regulating module, a button switch and a current measuring module. The detection line of the anticipation device is connected with the input end of secondary equipment to be maintained so that a loop is formed through combination of a current transformer secondary side, and access resistance of the shunting resistor module is zero at the time and thus the secondary equipment to be maintained is enabled to be short-circuit. After the secondary equipment to be maintained is maintained and accesses to the system, access resistance of the shunting resistor module is regulated via the resistance regulation module so that current flowing out of the current transformer secondary side enters the anticipation device, and current capable of being detected by the anticipation device is enabled to be high enough. The current measuring module is arranged on the detection line in a sleeving way and the value of current flowing through each phase of the current transformer secondary side can be acquired so that anticipation of open circuit of the current transformer secondary side can be realized by judging consistency of change of the current values of each phase and existence of the current value of the zero phase after the button switch is closed.

The invention relates to the technical field of electronic circuits, and particularly relates to a plug-in equipment awakening detection circuit and detection device and an electronic product. The awakening detection circuit comprises an access end, an awakening circuit and a detection circuit. The access end is used for accessing plug-in equipment; the awakening circuit is connected with the access end and used for detecting the access resistance of the plug-in equipment and outputting an awakening signal under triggering of the access resistance of the plug-in equipment, the output end of the awakening circuit is used for being connected with a host chip, the awakening signal is used for waking up the host chip in a standby state, manual wake-up of the host device is avoided, and operation is more convenient.

The invention relates to the technical field of soil remediation, in particular to safe regeneration equipment for chemical remediation of heavy metal contaminated soil. The equipment comprises a shell, electrode bars are fixedly connected to the left side and the right side of the lower surface of the shell, and relaxation plates are slidably connected to the positions, located on the inner sidesof the electrode bars, of the lower surface of the shell. The top end of the inner surface of the shell is fixedly connected with a fixed seat. An expansion shell in the shell is heated to expand togenerate upward thrust on a fixing plate, when the fixing plate is stressed and upward sliding happens in the fixing plate, a sliding block is pushed to slide on the outer surface of a limiting rod through a connecting rod, and when the sliding block slides on the outer surface of the limiting rod, the sliding block drives a sliding piece on the upper surface of the sliding block to slide on the sliding rod. Meanwhile, the contact position of the sliding sheet and a resistance rod is changed, so that the access resistance of the equipment is improved, the voltage introduced into soil by the equipment is reduced, the soil purification efficiency of the equipment is highest, and incomplete soil purification caused by over-high soil temperature is avoided.

The invention discloses a magnetic drive type liquid level detecting device which comprises a power supply, and a resistance converter and a single-chip microcomputer which are connected with the power supply. The resistance converter is connected with a rheostat in a sealed cavity. The sealed cavity comprises a bottom plate and a cover plate, wherein the cover plate is clamped on the bottom plate and matched with the bottom plate to form the sealed cavity. The rheostat comprises a resistance sheet, a first magnet, a second magnet and a swing rod fixedly connected with the second magnet. The tail end of the swing rod is connected with a floating ball. The first magnet is adopted as a slide contact of the resistance sheet, the access resistance of the resistance sheet is changed through the magnetic force drive of the second magnet on the first magnet, all rheostat components are sealed in the sealed cavity composed of the cover plate and the bottom plate, the corrosion and contamination of fuel oil are completely avoided, the liquid level detection precision is improved, the corrosion caused when mechanically rotating metal slide sheets rub the resistance sheet multiple times is avoided, the measurement precision is further improved, and the service life of the whole device is prolonged.