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82 results about "Access resistance" patented technology
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Nanoelectronic structure and method of producing such
InactiveUS20080149914A1Good electrical conductivityImproved/tailored pn-junctionsIndividual molecule manipulationNanoinformaticsAccess resistanceElectrical connection
The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.
Owner:QUNANO
Metalization of electronic semiconductor devices
InactiveUS6448648B1Avoids material deteriorationPrevent materialSemiconductor/solid-state device detailsSolid-state devicesAccess resistanceDevice material
An electronic semiconductor device comprising a semiconductor base deposited on a semiconductor substrate by means of molecular beam epitaxy and source, drain and gate disposed on the base in a spaced relationghip to each other, the source and the drain comprising Pd / barrier / Au layers with the palladium layer being in contact with the device. The device is fabricated conventionally except the heat treating is at above about 170° C. for ¼-10 hours sufficient for the palladium layer to react with the base yielding reduced contact and access resistances and a narrower spacing between source and drain.
Owner:THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY
Mis gate structure type HEMT device and method of fabricating mis gate structure type HEMT device
InactiveUS20090050938A1Lower access resistanceLower on-resistanceSemiconductor/solid-state device manufacturingSemiconductor devicesHeterojunctionElectrical resistance and conductance
A normally-off operation type HEMT device excellent in characteristics can be realized. A two-dimensional electron gas region is formed in a periphery of a hetero-junction interface of a base layer and a barrier layer, so that access resistance in an access portion, that is, between a drain and a gate and between a gate and a source is sufficiently lowered, and at the same time, a P-type region is formed immediately under the gate. This realizes a normally-off type HEMT device having a low on-resistance. Further, when a film thickness of an insulating layer is defined as t (nm) and a relative permittivity of a substance forming the insulating layer is defined as k, a threshold voltage as high as +3 V or more can be attained by satisfying k / t≦0.85 (nm−1).
Owner:NGK INSULATORS LTD
HFET with low access resistance
InactiveUS20130032860A1SpecificEasy to controlSemiconductor/solid-state device manufacturingSemiconductor devicesElectrical resistance and conductanceAccess resistance
A novel semiconductor power transistor is presented. The semiconductor structure is simple and is based on a Hetero-structure FET structure, where the access regions have been eliminated so as to effectively obtain a lower specific on-resistance, and a higher control on the transport properties of the device, drastically reducing the dispersion phenomena associated with these regions. The present invention can be realized both with polar and non-polar (or semi-polar) materials, without requiring delta doping implantation. It can be fabricated as an enhancement or depletion mode device with much higher control on the device threshold voltage with respect to state-of-the-art HFET devices, and achieving superior RF switching performance. Furthermore, due to the absence of access regions, enhancement mode devices can be realized without discontinuity in the channel conductivity, which results in an even lower on-resistance.
Owner:QUALCOMM INC
Nanosheet device with close source drain proximity
ActiveUS20190189769A1Increase widthReduce resistanceNanoinformaticsSemiconductor/solid-state device manufacturingAccess resistanceGate dielectric
A nanosheet transistor device having reduced access resistance is fabricated by recessing channel nanosheets and replacing the channel material with epitaxially grown doped extension regions. Sacrificial semiconductor layers between the channel nanosheets are selectively removed without damaging source / drain regions epitaxially grown on the extension regions. The sacrificial semiconductor layers are replaced by gate dielectric and gate metal layers.
Owner:IBM CORP
Multipath MPPT input photovoltaic inverter insulation impedance detection device and method
ActiveCN105356848AHigh precisionPhotovoltaic monitoringImpedence measurementsAccess resistanceSolar cell
The invention relates to a multipath MPPT input photovoltaic inverter insulation impedance detection device which is connected with a multipath MPPT input photovoltaic inverter connected with a photovoltaic system and used for detecting the ground insulation impedance value of the photovoltaic system. The multipath MPPT input photovoltaic inverter is connected with the positive electrodes PVn+ and the connected negative electrodes PV- of n solar cell panels in the photovoltaic system. The ground insulation impedance of each positive electrode PVn+ is Xn, and the ground insulation impedance of each negative electrode is Xn+1, wherein n is a positive integer greater than or equal to 2. The insulation impedance detection device comprises at least two paths of sub-circuits which can be independently on and off so as to change access resistance. At least two paths of sub-circuits are respectively connected between the positive electrodes PVn+ and the ground and between the negative electrodes PV- and the ground of the n solar cell panels in the photovoltaic system. The circuit is enabled to be in different states via on / off of each sub-circuit so that the ground insulation resistance value can be accurately detected based on different states of the circuit, and precision is relatively high.
Owner:JIANGSU GOODWE POWER SUPPLY TECHNOLOGY CO LTD
Gate Recessed FDSOI Transistor with Sandwich of Active and Etch Control Layers
ActiveUS20140027818A1Semiconductor/solid-state device manufacturingSemiconductor devicesCMOSControl layer
The structure and the fabrication methods herein implement a fully depleted, recessed gate silicon-on-insulator (SOI) transistor with reduced access resistance, reduced on-current variability, and strain-increased performance. This transistor is based on an SOI substrate that has an epitaxially grown sandwich of SiGe and Si layers that are incorporated in the sources and drains of the transistors. Assuming a metal gate last complementary metal-oxide semiconductor (CMOS) technology and using the sidewall spacers as a hard mask, a recess under the sacrificial gate reaching all the way through the SiGe layer is created, and the high-K gate stack and metal gate are formed within that recess. The remaining Si region, having a precisely controlled thickness, is the fully depleted channel.
Owner:SEMIWISE
Monolithically integrated self-aligned GaN-HEMTs and schottky diodes and method of fabricating the same
Monolithic integration of high-frequency GaN-HEMTs and GaN-Schottky diodes. The integrated HEMTs / Schottky diodes are realized using an epitaxial structure and a fabrication process which reduces fabrication cost. Since the disclosed process preferably uses self-aligned technology, both devices show extremely high-frequency performance by minimizing device parasitic resistances and capacitances. Furthermore, since the Schottky contact of diodes is formed by making a direct contact of an anode metal to the 2DEG channel the resulting structure minimizes an intrinsic junction capacitance due to the very thin contact area size. The low resistance of high-mobility 2DEG channel and a low contact resistance realized by a n+GaN ohmic regrowth layer reduce a series resistance of diodes as well as access resistance of the HEMT.
Owner:HRL LAB
Method for reducing parasitic resistance of graphene top gate FET device
InactiveCN103346088ALower resistanceIncrease the on-state currentSemiconductor/solid-state device manufacturingSemiconductor devicesPower flowAccess resistance
The invention discloses a method for reducing parasitic resistance of a graphene top gate FET device. According to the method, top gate metal is used as a mask for protecting a gate medium below the top gate metal, corrosion is carried out on the graphene top gate FET device to remove the gate medium covering graphene channel regions among a gate source and gate drains, then graphene material among the gate source and the gate drains are covered by a layer of metal in an vapor deposition mode, therefore metal-graphene contact is formed, and channel access resistance introduced by the distance among the gate source and the gate drains is eliminated. An autocollimation technology is adopted for carrying out the vapor deposition on the source drain metal, the access parasitic resistance generated by the distance among the gate source and the gate drains is avoided, so that the ON-state current of the graphene top gate FET device is effectively increased, and transconductance frequency and cut-off frequency of the device are impoved.
Owner:INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Fluctuation Resistant Low Access Resistance Fully Depleted SOI Transistor with Improved Channel Thickness Control and Reduced Access Resistance
ActiveUS20140027853A1Solid-state devicesSemiconductor/solid-state device manufacturingElectrical resistance and conductanceAccess resistance
The structure, and fabrication method thereof, implements a fully depleted silicon-on-insulator (SOI) transistor using a “Channel Last” procedure in which the active channel is a low-temperature epitaxial layer in an etched recess in the SOI silicon film. An optional δ-layer of extremely high doping allows its threshold voltage to be set to a desired value. Based on high-K metal gate last technology, this transistor has reduced threshold uncertainty and superior source and drain conductance. The use of epitaxial layer improves the thickness control of the active channel and reduces the process induced variations. The utilization of active silicon layer that is two or more times thicker than those used in conventional fully depleted SOI devices, reduces the access resistance and improves the on-current of the SOI transistor.
Owner:SEMIWISE
Doubly-fed asynchronous generator set low voltage ride through control system and control method thereof
InactiveCN104410098AImprove traversal abilityGood access resistanceGenerator control circuitsContigency dealing ac circuit arrangementsAccess resistanceControl system
The invention discloses a doubly-fed asynchronous generator set low voltage ride through control system and a control method thereof. The system comprises a doubly-fed asynchronous generator, a converter, a current detection module, a Crowbar circuit control module and a Crowbar module, wherein the doubly-fed asynchronous generator is connected with the electrical network, the converter is arranged between the doubly-fed asynchronous generator and the electrical network, and the current detection module, the Crowbar circuit control module and the Crowbar module are sequentially connected and are then arranged between the converter and the doubly-fed asynchronous generator. According to the system, the current change rate is calculated by setting the Crowbar circuit control module, the current peak value and the peak value arrival time are predicted, the proper time and the optimum resistance value for access of a Crowbar circuit are acquired, the optimum access resistance value and the access time of the Crowbar circuit are guaranteed according to low voltage faults in different levels, the recovery time of the low voltage faults is effectively ameliorated, energy consumption is reduced, and low voltage ride through capability of the doubly-fed asynchronous generator set is greatly improved.
Owner:SHANGHAI DIANJI UNIV
Control method of mobile terminal and mobile terminal
ActiveCN107045295AAvoid automatic shutdownAvoid restartProgramme control in sequence/logic controllersAccess resistanceInternal resistance
The invention provides a control method of a mobile terminal and a mobile terminal. The method comprises: obtaining an access resistance value corresponding to an access internal resistance at a power supply access of a mobile terminal; determining a current value corresponding to safe operation of the mobile terminal according to the access resistance value and obtaining a current practical working current value of the mobile terminal; and according to the current value corresponding to safe operation of the mobile terminal as well as the practical working current value, carrying out switching controlling on at least one application program operated currently by the mobile terminal. According to the invention, the mobile terminal determines the working current corresponding to the safe operation of the mobile terminal by detecting the access internal resistance at the power supply access and the operation of the parts of application programs of the mobile terminal is restricted to meet a requirement that the practical working current value of the mobile terminal is lower than the current value corresponding to safe operation of the mobile terminal, so that an automatic shutdown or restarting problem caused during the heavy-current application program operation of the mobile terminal can be solved and the experience of using the mobile terminal by the user can be guaranteed.
Owner:VIVO MOBILE COMM CO LTD
Nanosheet device with close source drain proximity
ActiveUS10439049B2Reduce resistanceNanoinformaticsSemiconductor/solid-state device manufacturingGate dielectricAccess resistance
Owner:INT BUSINESS MASCH CORP
Feed circuit of mainboard
InactiveCN101196774AVolume/mass flow measurementPower supply for data processingElectrical resistance and conductanceAccess resistance
A mainboard power supply circuit is provided, which is used for providing voltage for the mainboard when the mainboard exceeds frequency, and comprises a south bridge chip and a voltage transversion circuit, the voltage transversion circuit comprises an output end, the south bridge chip comprises at least one universal input output port, the each universal input output port is connected to the voltage transversion circuit through a resistance. Compared with the prior art, the mainboard power supply circuit controls output of the universal input output port through the controlling of a computer basic input output system, so as to control whether the resistance connected with the universal input output port is accessed into the voltage transversion circuit, the voltage transversion circuit can output different voltage at the output end according to the resistance value of the accessed resistance.
Owner:HONG FU JIN PRECISION IND (SHENZHEN) CO LTD +1
Power switching tube driving circuit applied to electronic safety device
InactiveCN102324834ASimple structureImprove performancePower conversion systemsAccess resistancePower switching
The invention discloses a power switching tube driving circuit applied to an electronic safety device. The circuit comprises a power supply input end, a power supply output end, a first power switching tube, a second power switching tube, an auxiliary power supply and a protection signal, wherein the drain electrode of the first power switching tube is connected with the anode of the power supply input end; the drain electrode of the second power switching tube is connected with the grid electrode of the first power switching tube; the auxiliary power supply is connected to the grid electrode of the first power switching tube by first access resistance; and the protection signal is connected with the grid electrode of the first power switching tube by second access resistance. The power switching tube driving circuit has the advantages of simple structure and reliable performance, is convenient to design, is convenient to control, is a N-channel power switching tube with wider variety and is an ideal circuit for high-end driving.
Owner:WEIDMULLER INTERFACE SHANGHAI
Nanoelectronic structure and method of producing such
InactiveUS20100221882A1Lower resistanceHigh carrier injectionIndividual molecule manipulationNanoinformaticsAccess resistanceElectrical connection
The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.
Owner:QUNANO
Static property detecting device for maintenance-free guided missile
The invention discloses a static property detecting device for a maintenance-free guided missile, and relates to the technical field of equipment detection. The detecting device comprises a data collecting card, a power module and an upper computer. The signal input end of the data collecting card is connected with a data collecting port in the maintenance-free guided missile. The data collecting card is in both-way junction with the upper computer. The data collecting card is used for collecting the access resistance values and insulation resistance values of the guided missile and storing the tested access resistance values and insulation resistance values, and the stored data are uploaded to the upper computer for processing when needed. The power module is connected with the power source input end of the data collecting card and used for providing a work power source for a module needing power supply in the data collecting card. The detecting device can detect the access resistance values and the insulation resistance values of the guided missile, and has the characteristics of being convenient to use and easy to operate.
Owner:NO 63908 TROOPS PLA
Testing system and method for broadband power line carrier channel access resistance
ActiveCN104184494AIncrease test frequency bandwidthEasy to operateResistance/reactance/impedencePower distribution line transmissionAccess resistanceData acquisition
The invention provides a testing system and method for the broadband power line carrier channel access resistance. The testing system comprises a PC, a signal generator, amplifiers, directional couplers, a power line coupler, a signal conditioning circuit and a data acquisition card. The PC, the signal generator, the amplifiers, the directional couplers, the signal conditioning circuit and the data acquisition card are sequentially connected, the data acquisition card is connected with the PC, and a broadband power line is connected with the directional couplers through the power line coupler. According to the testing system and method, a frequency sweeping method is adopted, the resolution of the access resistance to the frequency is improved, and the accuracy of measured data is higher; meanwhile, the testing system is easy and convenient to use, and site testing can be easily carried out. The modulus of the broadband power line carrier channel access resistance can be obtained through testing, and the phase information of the resistance can also be obtained; meanwhile, the measuring result is accurate, and the testing system and method can be conveniently applied to site measurement and are of great significance in further development research of power line communication.
Owner:STATE GRID CORP OF CHINA +3
Operational amplifier circuit offset voltage calibration method, device thereof and system
PendingCN113904632AReduce the occupied areaImprove linearityAmplifier modifications to reduce non-linear distortionAmplifier modifications to reduce temperature/voltage variationAccess resistanceHemt circuits
The invention discloses an operational amplifier circuit offset voltage calibration method, a device thereof and system and a computer readable storage medium, a compensation circuit is composed of a current calibration circuit and a resistance calibration circuit, and after a to-be-compensated voltage is determined according to a difference value between an actual offset voltage and an allowable offset voltage of a to-be-compensated amplifier circuit, the magnitude and direction of unit compensation current of a variable current source in a current calibration circuit of the compensation circuit are determined according to the magnitude and polarity of the to-be-compensated voltage, the access resistance of a resistance calibration circuit of the compensation circuit is determined according to the unit compensation current and the to-be-compensated voltage, repairing is carried out from the two angles of the access resistance and the current flowing through the access resistance, compared with a traditional binary system current compensation scheme which only adopts divider resistors to carry out trimming, the calibration means is more flexible, the number of the needed divider resistors is obviously reduced, namely, the area of a compensation circuit is reduced under the same compensation precision, higher compensation precision can be obtained, so that the linearity of offset voltage calibration is improved.
Owner:NINGBO CRRC TIMES TRANSDUCER TECH CO LTD
Heterogeneous integrated structure of two-dimensional material device and GaN device and preparation method
ActiveCN111599857ALower access resistanceImprove performanceTransistorSolid-state devicesElectrical resistance and conductanceAccess resistance
The invention provides a heterogeneous integrated structure of a two-dimensional material device and a GaN device and a preparation method. The two-dimensional material device and the GaN device are heterogeneously integrated on the same sapphire substrate, on and off of the GaN device are controlled through the two-dimensional material device, the performance of the overall heterogeneous integrated structure is improved, and the advantages of the GaN device are exerted; electric connection is achieved through interconnection electrodes, and the parasitic effect is reduced; in the two-dimensional material device, a two-dimensional material layer is used as a channel, a graphene layer is used as ohmic contact, and the problem of poor ohmic contact of the two-dimensional material device is solved; and a T-shaped grid electrode is used as a mask plate and a self-alignment process is carried out to form a second source electrode and a second drain electrode, so that the distances between the T-shaped grid electrode and the source electrode and between the T-shaped grid electrode and the drain electrode are shortened, the access resistance of the two-dimensional material device is reduced, and the performance of the two-dimensional material device is improved. According to the invention, the advantages of the GaN device can be fully exerted, and the performance of the whole heterogeneous integrated structure is improved.
Owner:ZHEJIANG UNIV
Access Resistance Modulated Solid-State Light Source
ActiveUS20170251533A1Laser detailsLaser active region structureElectrical resistance and conductanceAccess resistance
A solid-state light source with built-in access resistance modulation is described. The light source can include an active region configured to emit electromagnetic radiation during operation of the light source. The active region can be formed at a p-n junction of a p-type side with a p-type contact and a n-type side with a n-type contact. The light source includes a control electrode configured to modulate an access resistance of an access region located on the p-type side and / or an access resistance of an access region located on the n-type side of the active region. The solid-state light source can be implemented in a circuit, which includes a voltage source that supplies a modulation voltage to the control electrode to modulate the access resistance(s).
Owner:SENSOR ELECTRONICS TECH
Method for vertical gate-last process
ActiveUS20180219084A1Reduce the overall diameterMitigate, alleviate or eliminate one orNanoinformaticsSemiconductor/solid-state device manufacturingNanowireAccess resistance
A method for fabrication of vertical nanowire MOSFETs is considered using a gate-last process. The top ohmic electrode is first fabricated and may be used as a mask to form a gate recess using etching techniques. The gate is thereafter formed allowing a large degree in access resistance reduction.
Owner:WERNERSSON LARS ERIK +4
Headset detection circuit, headset detection method and electronic equipment
InactiveCN108064013AImprove compatibilityImprove experienceElectrical apparatusAccess resistanceSwitching signal
The embodiment of the invention provides a headset detection circuit, a headset detection method and electronic equipment. The headset detection circuit comprises a headset seat, an electric control switch, a master control chip and a triode; the electric control switch is respectively connected with the headset seat, the master control chip and the triode; the master control chip is connected with the triode, wherein the master control chip is used for judging a headset type inserted into the headset seat according to a detected access resistance value between the master control chip and theheadset seat, and the master control chip sends a switch handover signal to the electric control switch to perform the switch handover according to the headset type, thereby realizing the matching ofthe headset inserted into the headset seat and the electronic equipment. Through the headset detection circuit disclosed by the embodiment of the invention, the headsets in various different types canbe compatible, the structure is simple, the practicability is strong, and the cost is low.
Owner:XIAN WINGTECH ELECTRONICS TECH CO LTD
Gallium nitride transistor with self-aligned source and drain electrodes and preparation method of gallium nitride transistor
PendingCN111834454AReduce power lossImprove frequency characteristicsSemiconductor/solid-state device manufacturingSemiconductor devicesAccess resistanceEngineering
The invention relates to a gallium nitride transistor with self-aligned source and drain electrodes and a preparation method of the gallium nitride transistor. The gallium nitride transistor with theself-aligned source and drain electrodes comprises a substrate, a composite buffer region, a channel layer, a composite barrier region, a source electrode, a drain electrode and a grid electrode, wherein the grid electrode comprises a grid pin and a grid head, and the width of the grid head is greater than that of the grid pin; the side surface, which is close to the grid electrode, of the sourceelectrode and the first side surface of the grid head are in the same vertical plane; the side surface, which is close to the grid electrode, of the drain electrode and the second side surface of thegrid head are in the same vertical plane. According to the gallium nitride transistor with the self-aligned source and drain electrodes, through self-alignment of the source electrode, the drain electrode and the grid electrode, a source-drain interval similar to the width size of the grid head is realized, the source-drain interval is reduced to the greatest extent, and the source electrode access resistance and the drain electrode access resistance of the transistor are reduced, so that the power loss of the transistor is reduced, and the frequency characteristic of the transistor is improved.
Owner:XIDIAN UNIV
Terminal resistor automatic matching circuit and method
PendingCN109739789AReduce volumeReduce weightMultiple-port networksElectric digital data processingTest powerElectrical resistance and conductance
The invention provides a terminal resistor automatic matching circuit and method. The terminal resistance automatic matching circuit comprises a resistance network unit, a resistance control unit anda resistance value measuring unit, the resistance network unit is composed of M resistors connected in series, the M resistors are divided into a plurality of orders of magnitudes according to the resistance values, and each order of magnitude configures a resistor according to the mathematical law of 1, 2, 2 and 5; the resistance control unit is composed of M relays, and the M relays and the M resistors are correspondingly arranged in parallel; a corresponding resistor is connected / short-circuited by controlling disconnection / connection of the relay; the resistance measurement circuit comprises a test power supply interface and an ADC conversion circuit. wherein the test power supply interface and the resistor network unit integrally form a series loop, and the ADC conversion circuit is connected with a certain resistor in the M resistors in parallel and is used for measuring partial voltage on the resistor when a test power supply is connected so as to calculate whether the access resistance value of the terminal resistor is correct or not.
Owner:XIAN XIANGXUN TECH
Method and circuit of series control voltage fine controlling power source
ActiveCN103117658AHigh adjustment accuracyStable output voltageDc-dc conversionElectric variable regulationAccess resistanceControl power
The invention relates to a method of series control voltage fine controlling a power source. The method is characterized of being suitable for a switch power source, and providing a shifting latch. Series transmission control signals are utilized to control the shifting latch to adjust access resistance values of a plurality of divider resistors at an output end of the switch power source so as to adjust output voltage of the switch power source. According to the method and the circuit, a concise low-cost scheme is adopted. The shifting latch is utilized to realize adjustment of the series signals on output voltage of the switch power source, and the method and the device have the advantages of being high in adjusting accuracy, stable in output voltage, and the like.
Owner:福州欣联达电子科技有限公司
Current transformer secondary side open circuit anticipation device
The invention provides a current transformer secondary side open circuit anticipation device comprising a shunting resistor module, a resistance regulating module, a button switch and a current measuring module. The detection line of the anticipation device is connected with the input end of secondary equipment to be maintained so that a loop is formed through combination of a current transformer secondary side, and access resistance of the shunting resistor module is zero at the time and thus the secondary equipment to be maintained is enabled to be short-circuit. After the secondary equipment to be maintained is maintained and accesses to the system, access resistance of the shunting resistor module is regulated via the resistance regulation module so that current flowing out of the current transformer secondary side enters the anticipation device, and current capable of being detected by the anticipation device is enabled to be high enough. The current measuring module is arranged on the detection line in a sleeving way and the value of current flowing through each phase of the current transformer secondary side can be acquired so that anticipation of open circuit of the current transformer secondary side can be realized by judging consistency of change of the current values of each phase and existence of the current value of the zero phase after the button switch is closed.
Owner:STATE GRID CORP OF CHINA +3
Plug-in equipment awakening detection circuit and detection device and electronic product
PendingCN111157796AEasy to operateResistance/reactance/impedenceElectrical testingAccess resistanceHemt circuits
The invention relates to the technical field of electronic circuits, and particularly relates to a plug-in equipment awakening detection circuit and detection device and an electronic product. The awakening detection circuit comprises an access end, an awakening circuit and a detection circuit. The access end is used for accessing plug-in equipment; the awakening circuit is connected with the access end and used for detecting the access resistance of the plug-in equipment and outputting an awakening signal under triggering of the access resistance of the plug-in equipment, the output end of the awakening circuit is used for being connected with a host chip, the awakening signal is used for waking up the host chip in a standby state, manual wake-up of the host device is avoided, and operation is more convenient.
Owner:SHENZHEN XIN KINGBRAND TECH DEV
Safe regeneration equipment for chemical remediation of heavy metal contaminated soil
ActiveCN112058897AImprove purification efficiencyAvoid incomplete purificationContaminated soil reclamationSoil scienceAccess resistance
The invention relates to the technical field of soil remediation, in particular to safe regeneration equipment for chemical remediation of heavy metal contaminated soil. The equipment comprises a shell, electrode bars are fixedly connected to the left side and the right side of the lower surface of the shell, and relaxation plates are slidably connected to the positions, located on the inner sidesof the electrode bars, of the lower surface of the shell. The top end of the inner surface of the shell is fixedly connected with a fixed seat. An expansion shell in the shell is heated to expand togenerate upward thrust on a fixing plate, when the fixing plate is stressed and upward sliding happens in the fixing plate, a sliding block is pushed to slide on the outer surface of a limiting rod through a connecting rod, and when the sliding block slides on the outer surface of the limiting rod, the sliding block drives a sliding piece on the upper surface of the sliding block to slide on the sliding rod. Meanwhile, the contact position of the sliding sheet and a resistance rod is changed, so that the access resistance of the equipment is improved, the voltage introduced into soil by the equipment is reduced, the soil purification efficiency of the equipment is highest, and incomplete soil purification caused by over-high soil temperature is avoided.
Owner:南京沃锐特环境科技有限公司
Magnetic drive type liquid level detecting device
InactiveCN105737947AHigh measurement accuracyRotation time synchronizationLevel indicators by floatsMagnetic tension forceAccess resistance
Owner:GUANGDONG UNIV OF TECH
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