Heterogeneous integrated structure of two-dimensional material device and GaN device and preparation method

Abstract

The invention provides a heterogeneous integrated structure of a two-dimensional material device and a GaN device and a preparation method. The two-dimensional material device and the GaN device are heterogeneously integrated on the same sapphire substrate, on and off of the GaN device are controlled through the two-dimensional material device, the performance of the overall heterogeneous integrated structure is improved, and the advantages of the GaN device are exerted; electric connection is achieved through interconnection electrodes, and the parasitic effect is reduced; in the two-dimensional material device, a two-dimensional material layer is used as a channel, a graphene layer is used as ohmic contact, and the problem of poor ohmic contact of the two-dimensional material device is solved; and a T-shaped grid electrode is used as a mask plate and a self-alignment process is carried out to form a second source electrode and a second drain electrode, so that the distances between the T-shaped grid electrode and the source electrode and between the T-shaped grid electrode and the drain electrode are shortened, the access resistance of the two-dimensional material device is reduced, and the performance of the two-dimensional material device is improved. According to the invention, the advantages of the GaN device can be fully exerted, and the performance of the whole heterogeneous integrated structure is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and relates to a heterogeneous integration structure and a preparation method of a two-dimensional material device and a GaN device. Background technique [0002] As a representative of the third-generation semiconductor materials, gallium nitride (GaN) has many excellent characteristics such as high critical breakdown electric field, high electron mobility, high two-dimensional electron gas concentration, and good high-temperature working ability. Therefore, GaN-based third-generation semiconductor devices, such as high electron mobility transistors (HEMTs) and heterojunction field effect transistors (HFETs), have been applied, especially in fields requiring high power and high frequency such as radio frequency and microwave. has obvious advantages. [0003] Conventional GaN HEMT devices are normally-on devices. The most direct way to realize the normal shutdown of GaN HEMT devices is to...

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Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a heterogeneous integrated structure and preparation method of a two-dimensional material device and a GaN device, which is used to solve the Cascode structure in the prior art, which is difficult to take advantage of GaN devices and The problem of lower performance of the entire combined device

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