The invention provides a manufacturing method of a three-dimensional memory. The method comprises the steps: forming a
mask layer on an insulating layer, wherein the
mask layer comprises a first opening and a second opening, the first opening penetrates through the
mask layer, and the bottom of the second opening is provided with the
mask layer with a preset thickness; executing first
etching which has a first
etching selection ratio for the insulating layer and the
mask layer with the preset thickness,
etching the insulating layer to the bottom through the first opening, etching the
mask layer through the second opening, and exposing at least part of the insulating layer; and executing second etching which has a second etching selection ratio for the
semiconductor layer and the insulating layer, etching the
semiconductor layer through the first opening and form a first
contact hole penetrating through the insulating layer and the
semiconductor layer, and simultaneously etching the insulating layer through the second opening and form a second
contact hole exposing at least part of the semiconductor layer. A first through contact, a second through contact and an isolation structure can be formed at the same time, and the manufacturing process is simplified.