35results about How to "Simple deposition process" patented technology

The invention provides a high-hardness high-corrosion-resistance high-entropy alloy nitride coating. The molecular formula of the high-hardness high-corrosion-resistance high-entropy alloy nitride coating is (AlCrTiZrNbV)N. The invention further provides a preparation method of the coating. The method comprises the steps of firstly, cleaning a matrix and then conducting ion cleaning; secondly, sending the treated matrix to a sputtering chamber to deposit a TiN transition coating, controlling a Ti target material through a DC cathode and depositing the TiN transition coating of 100-200 nm; andthirdly, depositing a TiAlN transition coating on the TiN transition coating and depositing the (AlCrTiZrNbV)N coating on the TiAlN transition coating. The (AlCrTiZrNbV)N coating obtained through thepreparation method has high hardness exceeding 35 GPa and also has excellent corrosion resistance. The coating has the characteristics of being simple in production process, high in deposition speed,low in cost and the like and also has the advantages of being high in production efficiency, low in energy consumption and low in equipment requirement.

The invention provides a field emission cathode with a double-layer nanocarbon coating and a preparation method. First, nanodiamond is coated on a substrate through electrophoretic deposition to form a nanodiamond coating; then nanocarbon tubes are deposited through electrophoresis. The method is coated on the nanodiamond coating to form a carbon nanotube coating; finally, heat treatment is performed in a hot wire chemical vapor deposition system to cause a chemical bonding reaction between the substrate and the nanodiamond coating to obtain a chemical bonding layer. Obtain a field emission cathode with a four-layer structure of substrate - chemical bonding layer - nanodiamond coating - nanocarbon tube coating. This field emission cathode has the advantages of both carbon nanotubes and nanodiamond and has good field emission characteristics. and field emission stability.

The invention discloses a preparation method of an Al3C4-Al2O3-ZrO2 wear-resistant composite coating on the surface of aluminum alloy. According to the preparation method, an electrolytic tank of a single-groove structure is adopted, and a mixed solution prepared from zirconium nitrate, urea, formamide and glycerin is used as an electrolyte. The cathode side is covered with an aluminum oxide ceramic sheet with the size similar to the size of a workpiece so that a non-conducting shielding effect can be achieved in the discharging process, electric field distortion caused by the edge effect around the cathode is reduced, and discharging of the cathode is more uniform. A direct-current voltage or a pulse voltage is applied to the electrolytic tank, so that a continuous and uniform air film israpidly formed on the surface of the cathode, continuous plasma micro-arc discharging can be caused on the surface of the aluminum alloy, and accordingly, the stable, uniform and hard ceramic coatingis formed on the surface of the aluminum alloy. By adoption of the preparation method, the wear-resistant and corrosion-resistant coating with high hardness, a small friction coefficient and a low wear rate can be prepared on the surface of the aluminum alloy, and thus, the application of the aluminum alloy in the fields of traffic, energy and the like is effectively widened.

The invention discloses a preparation method of a bismuth telluride nano-wire array by adopting a physical vapor deposition method. The method comprises the following steps: in a vacuum chamber, raw bismuth telluride is thermally evaporated and a membrane with bismuth telluride nano-wire array structure is deposited on the glass substrate by regulating the output electric current of the mains supply and the distance between the glass substrate and a tungsten boat. The whole deposition process is simple, the cost is low, and mass production is easy to be achieved; the obtained bismuth telluride nano-wire arrays are uniform in structure and the even distribution of nanophases is effectively ensured.

The invention discloses a silver nanodendrite surface enhanced Raman scattering (SERS) substrate, and a preparation method and application thereof, relating to the technical field of nanomaterial science and Raman detection. The SERS active substrate is of silver dendrites which are distributed evenly, and the three-dimensional sizes of dendrites are adjustable. The preparation method of the invention is characterized in that the silver nanodendrites are electrically deposited on commercially available ITO (Indium-doped Tin Oxide) conductive glass by adopting a constant current deposition method and using a silver nitrate solution as electrolyte without adding any other auxiliary. The preparation method of the invention has the advantages of simple, convenient fast (30s) preparation process, low cost, small current and low voltage, and the silver dendrites can be transferred to any substrate (paper, other metal sheets or plastic sheets). The substrate obtained by the method disclosed by the invention has high stability and ordered and controllable structure, and exhibits quite high sensitivity in Raman spectrum detection.

The invention discloses an ultra-low power consumption ferroelectric transistor memory based on a two-dimensional organic functional material and a preparation method thereof. An aluminum oxide insulating layer is grown on a substrate by an atomic beam deposition method, and then an antisolvent is used to An ultrathin crystalline ferroelectric polymer film was prepared at room temperature by assisted crystallization, and then an ultrathin layer of polymethyl methacrylate and an ultrathin layer of dioctyl Dioctylbenzothiophene benzothiophene, and finally a gold film was transferred onto the dioctylbenzothiophene benzothiophene layer as source and drain electrodes using a non-invasive gold film transfer process. The present invention uses the quasi-two-dimensional ferroelectric polymer crystalline film as the dielectric layer and the two-dimensional organic molecular crystal C 8 ‑BTBT material is used as a semiconductor layer to prepare fast transistor memory, which can greatly reduce the power consumption of ferroelectric organic field effect transistor memory, and has low-voltage operation capability and fast storage capability.

The invention relates to a method for preparing an Ag nanowire array electrode according to magnetron sputtering-masking assisted deposition, in particular to a method for preparing Ag films according to a magnetron sputtering and electrode masking assisted deposition technology. Metal electrode Ag target materials, which are connected, are deposited on an upper AlN substrate and a lower AlN substrate respectively; the sizes of both the upper AlN substrate and the lower AlN substrate are (1-40 mm)*(1-35 mm); then through alignment, p-Bi-Sb-Te film thermocouple arms and n-Bi-Te-Se film thermocouple arms are respectively deposited on prepared electrodes under the assistance of thermoelectric material masking; finally, several to thousands of p-Bi0.5Sb1.5Te3 film thermocouple arms and several to thousands of n-Bi2Se0.3Te2.7 film thermocouple arms, which are arranged on the upper AlN substrate and the lower AlN substrate respectively, form several to thousands of pairs of micro-devices adopting p-n structures through up-down bonding. Performance tests show that compared with the performance of a device with an electrode adopting the conventional structure, the performance of a device with the nanowire array electrode is improved significantly. Therefore, introduction of the Ag nanowire array electrode is an effective way to improve the performance of a thermoelectric micro-device. The method is simple in manufacture process, simple and convenient to operate, low in requirements on production environment, and very remarkable in practical value and economic benefits.

The invention relates to a method for controllable preparation of a multi-level Bi-Sb-Te inclined column array by the adoption of evaporation coating. The method mainly comprises the steps that Bi1.5Sb0.5Te3 powder with the mass percent purity of 99.99% is pressed into a Bi1.5Sb0.5Te3 block under the pressure of 8-10 MPa; 0.1-0.2 g of the Bi1.5Sb0.5Te3 block is placed in a tungsten boat of a vacuum chamber of a vacuum coating machine; high-purity nitrogen is introduced into the vacuum chamber for 2-5 min before introduction is stopped, then the vacuum chamber is vacuumized, and the vacuum degree in the vacuum chamber is made to range from 2.0*10-4 Pa to 5.0*10-4 Pa; a heating temperature control power source is switched on, and after the temperature is raised to the predetermined temperature of 250-350 DEG C, the deposition rate is set to be 12-20 nm / min on a PID controller, and the deposition time is 2-3 h; an alternating-current power source is switched on, and the output current is regulated to be 160-170 A; preparation of the multi-level Bi1.5Sb0.5Te inclined column array by means of deposition on a substrate is started. The whole deposition technological process is simple, cost is low, large-scale production is easy, the obtained multi-level Bi1.5Sb0.5Te column array grows in an inclined mode, the nanowire and column array is uniform in structure, uniform distribution of nanophases is effectively guaranteed, and the application effect is very remarkable.