34results about How to "Simple deposition process" patented technology

The invention discloses an aluminum powder pigment with iridescent pearl luster and a preparation method thereof. The method uses aluminum powder with an average particle size of 10 μm to 150 μm and a surface coated with SiO2 film as the substrate raw material. The SiO2 film is inert, acid-resistant, heat-resistant, and transparent. The pH of the solution is 1.5-2.5 and the temperature is 60 Under the condition of ℃~80℃, deposit a layer of nano-titanium dioxide film on the transparent SiO2 film by chemical liquid phase deposition, wash and dry, and bake the pigment at 500℃~600℃ under the protection of inert gas 0.5~1.0 h, the high-gloss pearlescent aluminum powder pigment with TiO2/SiO2/Al-based composite film was obtained. The pigment also has excellent comprehensive properties such as the illusion interference effect of pearlescent pigments and the conductivity, high hiding power, shielding and non-toxic environmental protection of metallic aluminum powder pigments. It has unique decorative effects and can be widely used in high-end automotive topcoats and high-end decorations. Products, surface coating of high-end instruments, ink printing, children's toys, etc. The method of the invention is simple and feasible, and has industrial feasibility.

The invention discloses an Au nano dendrites surface-reinforced Raman scattering substrate and a preparation method thereof. The SERS active substrate is a layered micro nano structure composited by precious metal Au and a semiconductor ZnO. The preparation method employs a two-step constant current deposition method, an Au spin-coated ZnO nano rod array substrate generated on an ITO electro-conductive glass is taken as a work electrode, graphite flake is taken as a counter electrode, the Au nano dendrites can be produced. The active substrate is formed by a main part (the Au nano rod) hollow structure and a lim Au dendrite. The method has the advantages of simple process, low cost, small current, and low voltage, the Au dendrite can be transferred to a silicon chip substrate; the substrate obtained in the invention has the advantages of high stability, and ordered and controllable structure, and has high stability in the Raman spectroscopy detection.

The invention relates to high temperature resistant antioxidative coating materials, and particularly provides a high temperature resistant antioxidative metal ceramic composite coating and a preparation method thereof. The composite thin film is characterized in that the coating consists of refractory metal, refractory carbide and an intermetallic compound. The coating is 10-50 mu m thick. The refractory metal is one or more of molybdenum, tantalum, zirconium and hafnium, the refractory carbide consists of silicon carbide as well as one or more of tantalum carbide, zirconium carbide and hafnium carbide, and the intermetallic compound consists of one or more of molybdenum silicide, tantalum silicide, zirconium silicide, hafnium silicide, tantalum silicon carbide, zirconium silicon carbide and hafnium silicon carbide. The crystal structure of the coating consists of amorphous and/or polycrystal nanoparticles.

The invention discloses a nano-particle reinforced copper-based composite material and a preparation method thereof. The size of a copper matrix grain is smaller than 20 microns in the copper-based composite material; the nano-particle reinforced phase is molybdenum carbide, or molybdenum carbide and molybdenum, or molybdenum carbide and carbon; the particle size of the nano-particle reinforced phase is smaller than 200nm; the mass percent of Mo in the copper-based composite material is 0.1-15%; the mass percent of C is smaller than 1%. The nano-particle reinforced copper-based composite material disclosed by the invention is prepared by adopting an electronic beam physical vapor deposition process. The nano-particle reinforced copper-molybdenum-carbon composite material prepared by the method has excellent mechanical property and electrical property, and adopted electronic beam physical vapor deposition process is simple, low in cost and easy to control.

The invention discloses a preparation method of tellurium nano wire array based on physical vapor deposition. By adjusting the magnitude of current output by alternative power supply and the distance of glass substrate and tungsten boat, a thin film with tellurium nano wire array structure is directly deposited on the glass substrate by thermal evaporation of tellurium material in a vacuum chamber; the whole deposition technique has simple process, low cost and easy scale production; and the obtained tellurium nano wire array has uniform structure, thus effectively guaranteeing uniform distribution of nanophase.

The invention discloses a method for preparing a copper zinc tin sulfur selenium thin film by using an alloy rotary target material. The method comprises the following steps of: (1) heating a substrate on which a molybdenum layer is deposited until the temperature rises to 300 to 400 DEG C, regulating sputtering power to 30 to 200 W by using a sputtering method, and sputtering to obtain a first thin film, wherein the surface of the first thin film is in a copper-poor zinc-rich state; (2) regulating the temperature of the substrate to 400 to 600 DEG C, regulating the sputtering power to 80 to 200 W by using the sputtering method, and sputtering to obtain a second thin film, wherein the surface of the second thin film is in a copper-rich state; and (3) regulating the temperature of the substrate to 400 to 600 DEG C, regulating the sputtering power to 30 to 200 W by using the sputtering method, and sputtering to obtain a third thin film, wherein the surface of the second thin film is in a copper-poor state, so that the copper zinc tin sulfur selenium thin film is prepared.

The invention provides a manufacturing method of a strain CMOS device. The method comprises the following steps: providing a CMOS device; successively forming a first stress layer and a film oxidation layer on a CMOS device surface; imaging the film oxidation layer so as to expose a part of the first stress layer which is located in a PMOS transistor area; taking the film oxidation layer as a hard mask so as to etch the first stress layer; at least forming a sacrificial barrier layer on a film oxidation layer surface; forming a second stress layer on a formed semiconductor structure surface; taking the sacrificial barrier layer as an etching stop layer so as to etch a part of the second stress layer which is located in the NMOS transistor area; removing the sacrificial barrier layer. In the invention, through forming the sacrificial barrier layer on the film oxidation layer surface and taking the sacrificial barrier layer as the etching stop layer, a problem of over etching can be solved. Further, the sacrificial barrier layer can be amorphous carbon. A deposition technology is simple and the sacrificial barrier layer removing is easy to be performed.

The invention discloses a surface coating modification method for a ternary positive electrode material of a lithium ion battery, and belongs to the field of positive electrode materials of lithium ion batteries. The method comprises the following steps: sequentially loading an aluminum source and an oxygen source onto the surface of a ternary positive electrode plate of the lithium ion battery by using carrier gas by utilizing an atomic deposition system: adsorbing a layer of aluminum source on the surface of the ternary positive electrode plate of the lithium ion battery, and then carrying out combination reaction on the oxygen source and the adsorbed layer of aluminum source to generate an aluminum oxide layer; repeating the cycle number of the aluminum oxide layer, namely depositing an aluminum oxide film on the surface of the ternary positive electrode plate of the lithium ion battery, so as to realize coating modification on the surface of the ternary positive electrode material of the lithium ion battery. The surface coating modification method for the ternary positive electrode material of the lithium ion battery is short in preparation period, safe and simple in method, low in energy consumption, simple in required equipment and suitable for modification of various ternary positive electrode materials.

The invention relates to a silicon carbide semiconductor device and a preparation method thereof. Two sides of a trench gate dielectric layer are respectively provided with two heavily doped polycrystalline silicon trench regions of a second conductive type. Due to the energy band structure of silicon carbide and polycrystalline silicon, the area of a depletion region of a shielding region is reduced by the polycrystalline silicon trench region. The reduction of the area of the depletion region not only can reduce the electric field intensity at the corner of the protective trench gate medium, but also can slightly hinder electron flow, thereby reducing the resistance of the drift region. The polycrystalline silicon deposition process of the second conduction type is relatively simple, and the problems of depth and transverse diffusion caused by the traditional silicon carbide ion implantation process of the second conduction type are avoided by adopting the heavily doped polycrystalline silicon trench region of the second conduction type.

The invention discloses a low-contact-resistance fuel cell stack and a fuel cell using the same. Each fuel cell unit comprises an anode plate, a membrane electrode and a cathode plate which are sequentially stacked into a whole, wherein the membrane electrode is provided with gas diffusion layers on each of two sides; the cathode plate and the anode plate are silicon polar plates made of doped conductive crystalline silicon materials; the silicon polar plates are provided with front reducing agent runners and/or back oxidizing agent runners; an intermediate layer for reducing contact resistance is arranged between each silicon polar plate and the corresponding gas diffusion layer; the intermediate layer are deposition films formed by a deposition process; and each deposition film comprisesa carbon deposition film in contact with the corresponding gas diffusion layer. According to the low-contact-resistance fuel cell stack and the fuel cell using the same of the invention, the metal deposition film are adopted as the intermediate transition layers, so that the contact resistance between the carbon films and the surfaces of the silicon polar plates can be obviously reduced, so thatthe internal resistance of the fuel cell stack is obviously reduced.

The invention discloses a polyhedral cobalt iridium nano particle electrolytic hydrogen evolution catalyst and a plating solution formula and a preparation method thereof. The cobalt iridium nano particles have octahedral and octahedral structures, the particle size is 10-250 nm, the chemical components of cobalt and iridium in the particles are uniformly distributed, the iridium content is 45-95wt%, the catalytic hydrogen evolution performance tower fresnel slope of the catalyst is 30-40 mV/decade. The plating solution formula of the catalyst is that the cobalt salt is 5-200 mmol/L of cobaltsulfamate and 1-100 mmol/L of cobalt sulfamate; the iridium salt is 10-150 mmol/L of hexa-bromo-iridium (IV) acid sodium and 1-100 mmol/L of hexa-bromo-iridium (III) acid sodium; the conductive saltis 0.1-500 mmol/L of sodium bromide and 0.1-100 mmol/L of sodium chloride; the complexing agent is 1-20 mmol/L of triammonium citrate and 1-10 mmol/L of sodium tetraborate l; and the other additives are 1-10 mmol/L of benzotriazole, 1-10 mmol/L of thiourea and 1-5 mmol/L of sodium dodecyl benzene sulfonate. The preparation method is prepared by an electrochemical deposition process, is high in efficiency and can be applied to the surface preparation of a conductive substrate with a complicated shape, and the size of the nano particles and the components of the nano particles are controllable;in addition, the catalytic performance is high, and the stability is high.

The invention discloses a method for reducing the contact resistance of carbon and silicon, and the method employs a silicon plate which reduces the contact resistance between the silicon plate and acarbon film. The process comprises the following operation steps: S10) preparing a silicon plate, wherein the silicon plate is made of a doped conductive crystalline silicon material; S20) obtaining atransition deposition film and a carbon deposition film on the silicon plate through a deposition process, wherein the transition deposition film and the carbon deposition film are respectively formed through a single deposition process or once formed through a single deposition process. by arranging the structural design of the transition deposition film, the contact resistance between the silicon plate and the carbon deposition film is remarkably reduced.

The invention provides a manufacturing method of a three-dimensional memory. The method comprises the steps: forming a mask layer on an insulating layer, wherein the mask layer comprises a first opening and a second opening, the first opening penetrates through the mask layer, and the bottom of the second opening is provided with the mask layer with a preset thickness; executing first etching which has a first etching selection ratio for the insulating layer and the mask layer with the preset thickness, etching the insulating layer to the bottom through the first opening, etching the mask layer through the second opening, and exposing at least part of the insulating layer; and executing second etching which has a second etching selection ratio for the semiconductor layer and the insulating layer, etching the semiconductor layer through the first opening and form a first contact hole penetrating through the insulating layer and the semiconductor layer, and simultaneously etching the insulating layer through the second opening and form a second contact hole exposing at least part of the semiconductor layer. A first through contact, a second through contact and an isolation structure can be formed at the same time, and the manufacturing process is simplified.

The invention provides electrophoretic paint capable of preventing adhesion of liquid and bacteria. The electrophoretic paint is prepared from high-hydroxyl-value water-soluble cationic resin, a silicon-modified cross-linking component and a diluting solvent. The high-hydroxyl-value water-soluble cationic resin is obtained by polymerizing vinyl monomers in a first reaction solvent, and the vinyl monomers comprise a comonomer, a cationic monomer and a cross-linking monomer. The silicon-modified cross-linking component is obtained by reacting a silicone oil liquid low-surface-energy compound with water-dispersed or water-soluble amino resin in a second reaction solvent. The electrophoretic paint disclosed by the invention has excellent low adhesion to liquid and bacteria.