Method for preparing copper zinc tin sulfur selenium thin film by using alloy rotary target material

A copper-zinc-tin-sulfur-selenium and rotating target technology, which is applied in the fields of final product manufacturing, sustainable manufacturing/processing, semiconductor/solid-state device manufacturing, etc., can solve the problem of high zinc-tin vapor pressure and difficulty in obtaining copper-poor-rich zinc-rich large particle crystals Interfacial copper-zinc-tin-sulfur-selenium thin films and other issues can achieve the effects of saving heating costs, optimizing film deposition processes, and reducing production costs

Active Publication Date: 2013-07-17
赣州优膜科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This is because the vapor pressure of zinc and tin is high, and it is difficult to obtain a copper-poor zinc-rich large-grain crystal interface and a high-quality copper-zinc-tin-sulfur-selenide film by conventional four-source or three-source co-evaporation methods

Method used

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  • Method for preparing copper zinc tin sulfur selenium thin film by using alloy rotary target material
  • Method for preparing copper zinc tin sulfur selenium thin film by using alloy rotary target material
  • Method for preparing copper zinc tin sulfur selenium thin film by using alloy rotary target material

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Embodiment 1

[0021] The rotating target material 1 used in the first step sputtering of the present invention is Cu 1.5 ZnSnS(Se) 4 , the rotating target 2 used in the second sputtering step is Cu 2 ZnSnS(Se) 4 , the rotating target 3 used in the third step of sputtering is Cu 1.8 ZnSnS(Se) 4 , the length of the three targets is 160 cm, the outer diameter is 14 cm, the inner diameter is 13 cm, and the thickness is 1 cm. The atomic number ratio of the three targets is 2:0.5:0.5:4. The method comprises the steps of:

[0022] (1) Using the sputtering method, coat a molybdenum layer on a soda-lime glass substrate with a thickness of 2mm, and the sputtering condition is that the initial vacuum degree is 10 -6 Torr, feed 20SCCM of argon to make the vacuum pressure reach 6mTorr, sputtering power 150W, sputtering time 45min, the thickness of the molybdenum layer is 200nm, and the resistivity of the molybdenum layer is 5 ohm centimeters;

[0023] (2) Heat the soda-lime glass substrate deposit...

Embodiment 2

[0028] The rotating target material 1 used in the first step sputtering of the present invention is Cu 1.5 ZnSnS(Se) 4 , the rotating target 2 used in the second sputtering step is Cu 2 ZnSnS(Se) 4 , the rotating target 3 used in the third step of sputtering is Cu 1.8 ZnSnS(Se) 4 , the length of the three targets is 160 centimeters, the outer diameter is 14 centimeters, the inner diameter is 13 centimeters, and the thickness is 0.5 centimeters. The atomic number ratio of the three kinds of targets is 1.5:1.5:1.5:4. The method includes the following steps:

[0029] (1) Using the sputtering method, a molybdenum layer is coated on a soda-lime glass substrate with a thickness of 4 mm, and the sputtering condition is that the initial vacuum degree is 10 -6 Torr, feed the argon gas of 20SCCM so that the vacuum pressure reaches 6mTorr, sputtering power 150W, sputtering time 45min, the thickness of the molybdenum layer is 800nm, and the resistivity of the molybdenum layer is 3 ohm...

Embodiment 3

[0035] The rotating target material 1 used in the first step sputtering of the present invention is Cu 1.5 ZnSnS(Se) 4 , the rotating target 2 used in the second sputtering step is Cu 2 ZnSnS(Se) 4 , the rotating target 3 used in the third step of sputtering is Cu 1.8 ZnSnS(Se) 4 , the length of the three targets is 160 centimeters, the outer diameter is 14 centimeters, the inner diameter is 13 centimeters, and the thickness is 1.5 centimeters. The atomic number ratio of the three kinds of targets is 1.5:1:1:4. The method includes the following steps:

[0036] (1) Using the evaporation method, a molybdenum layer is plated on a plastic sheet substrate with a thickness of 6 mm, and the evaporation condition is an initial vacuum degree of 10 -6 Torr, voltage 7KV, current 20mA, evaporation time 30min, the thickness of the molybdenum layer is 1000nm, the resistivity of the molybdenum layer is 1 ohm cm; the plastic sheet is polyimide plastic;

[0037] (2) Heat the plastic sheet...

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Abstract

The invention discloses a method for preparing a copper zinc tin sulfur selenium thin film by using an alloy rotary target material. The method comprises the following steps of: (1) heating a substrate on which a molybdenum layer is deposited until the temperature rises to 300 to 400 DEG C, regulating sputtering power to 30 to 200 W by using a sputtering method, and sputtering to obtain a first thin film, wherein the surface of the first thin film is in a copper-poor zinc-rich state; (2) regulating the temperature of the substrate to 400 to 600 DEG C, regulating the sputtering power to 80 to 200 W by using the sputtering method, and sputtering to obtain a second thin film, wherein the surface of the second thin film is in a copper-rich state; and (3) regulating the temperature of the substrate to 400 to 600 DEG C, regulating the sputtering power to 30 to 200 W by using the sputtering method, and sputtering to obtain a third thin film, wherein the surface of the second thin film is in a copper-poor state, so that the copper zinc tin sulfur selenium thin film is prepared.

Description

technical field [0001] The invention relates to a method for preparing a copper-zinc-tin-sulfur-selenide thin film, in particular to a method for preparing a copper-zinc-tin-sulfur-selenium thin film by using an alloy rotating target. Background technique [0002] As the most promising thin-film solar cell technology listed by the U.S. Department of Energy and other well-known solar cell research institutions, CIGS solar cell technology is attracting more and more researchers and investors with its extensive advantages . So far, the efficiency of copper indium gallium selenide solar cells has exceeded 20.3% in the laboratory, which is equivalent to that of single crystal silicon. At the same time, more and more companies and institutions are working on the trial production and commercial expansion of this technology. However, the industrialization of CIGS solar cells still lags behind monocrystalline silicon solar cells and other thin-film solar cells, such as cadmium tell...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/203H01L31/18
CPCY02P70/50
Inventor 徐从康
Owner 赣州优膜科技有限公司
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