Method for preparing bismuth telluride nano-wire array by physical vapour deposition

A physical vapor deposition, bismuth telluride nanotechnology, which is applied in the field of preparing bismuth telluride nanowire arrays, can solve the problems of high template quality requirements, line density that cannot fully meet the density requirements of micro-refrigeration devices, and influences

Inactive Publication Date: 2011-01-12
BEIHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, the successful preparation of bismuth telluride nanowire array structure reported internationally is only the bismuth telluride nanowire array with a minimum particle size of about 40nm synthesized by M.Stacy et al. using the alumina template method, which is affected by the completeness of the template hole filling. , and its linear density cannot fully meet the density requirements applied to microrefrigeration devices (5×10 10 / cm 2 ), and the quality requirements of the templates used are very high, and the existing commercially produced alumina templates cannot meet their production standards

Method used

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  • Method for preparing bismuth telluride nano-wire array by physical vapour deposition
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  • Method for preparing bismuth telluride nano-wire array by physical vapour deposition

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Experimental program
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Effect test

Embodiment 1

[0021] Put the bismuth telluride elemental powder with a particle size of 5-10 μm into the tungsten boat 2 of the vacuum chamber 1 of the vacuum coating machine, place the glass substrate 3 on the sample stage 4, and adjust the distance d between the glass substrate 3 and the tungsten boat 2 = 10cm;

[0022] Seal the vacuum chamber 1, fill the vacuum chamber 1 with nitrogen for 3 minutes and stop (the nitrogen can be filled twice), then vacuumize the vacuum chamber 1 to make the vacuum degree in the vacuum chamber 1 reach 2.0×10 -4 Pa;

[0023] Set the deposition rate on the vacuum coating machine to 0.7nm / min, and the deposition time to 8h;

[0024] Turn on the AC power supply, adjust the output current to 165A; begin to deposit the bismuth telluride nanowire array thin film on the glass substrate 3 by physical vapor phase deposition.

[0025] After the preparation is completed, the AC power is turned off, and after natural cooling to room temperature, the glass substrate 3...

Embodiment 2

[0029] Put the bismuth telluride powder with a particle size of 5-20 μm into the tungsten boat 2 of the vacuum chamber 1 of the vacuum coating machine, place the glass substrate 3 on the sample stage 4, and adjust the distance d=6cm between the glass substrate 3 and the tungsten boat 2 ;

[0030] Seal the vacuum chamber 1, fill the vacuum chamber 1 with nitrogen for 5 minutes and then stop, then evacuate the vacuum chamber 1 to make the vacuum degree in the vacuum chamber 1 reach 3.0×10 -4 Pa;

[0031] Set the deposition rate on the vacuum coating machine to 1.8nm / min, and the deposition time to 5h;

[0032] Turn on the AC power supply, adjust the output current to 175A; begin to deposit and prepare the bismuth telluride nanowire array thin film on the glass substrate 3 .

[0033] After the preparation is completed, the AC power is turned off, and after natural cooling to 28° C., the glass substrate 3 with the bismuth telluride nanowire array thin film is taken out.

[0034...

Embodiment 3

[0037] Put the bismuth telluride powder with a particle size of 10-20 μm into the tungsten boat 2 of the vacuum chamber 1 of the vacuum coating machine, place the glass substrate 3 on the sample stage 4, and adjust the distance d=9cm between the glass substrate 3 and the tungsten boat 2 ;

[0038] Seal the vacuum chamber 1, fill the vacuum chamber 1 with nitrogen for 3 minutes and then stop, then evacuate the vacuum chamber 1 to make the vacuum degree in the vacuum chamber 1 reach 5.0×10 -5 Pa;

[0039] Set the deposition rate on the vacuum coating machine to 4nm / min, and the deposition time to 6h;

[0040] Turn on the AC power supply, adjust the output current to 170A; begin to deposit and prepare the bismuth telluride nanowire array thin film on the glass substrate 3 .

[0041] After the preparation is completed, the AC power is turned off, and after natural cooling to 22° C., the glass substrate 3 with the bismuth telluride nanowire array thin film is taken out.

[0042]...

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Abstract

The invention discloses a preparation method of a bismuth telluride nano-wire array by adopting a physical vapor deposition method. The method comprises the following steps: in a vacuum chamber, raw bismuth telluride is thermally evaporated and a membrane with bismuth telluride nano-wire array structure is deposited on the glass substrate by regulating the output electric current of the mains supply and the distance between the glass substrate and a tungsten boat. The whole deposition process is simple, the cost is low, and mass production is easy to be achieved; the obtained bismuth telluride nano-wire arrays are uniform in structure and the even distribution of nanophases is effectively ensured.

Description

technical field [0001] The invention relates to a method for preparing bismuth telluride (Bi 2 Te 3 ) nanowire array method, more specifically, refers to a method of preparing bismuth telluride nanowire array on a glass substrate by physical vapor deposition. Background technique [0002] Rowe gave a detailed introduction to thermoelectric materials in his book "CRC Handbook of Thermoelectrics" (published by CRC Press in 1995). Among all current thermoelectric materials, Bi 2 Te 3 The semi-conductor materials are currently recognized as the best thermoelectric materials in room temperature and medium temperature regions, and they are already the industry standard for commercial thermoelectric devices. Currently the highest level in the world is Bi as reported by R.Venkatasubramanian 2 Te 3 / Sb 2 Te 3 Superlattice structure (ZT=2.4), but in order for thermoelectric materials to achieve the refrigeration efficiency of traditional refrigeration (compressor) systems, the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C03C17/22
Inventor 邓元宋袁曾杨萌王广胜张艳景
Owner BEIHANG UNIV
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