Preparation of tellurium nano-wire array based on physical vapour deposition

A technology of physical vapor deposition and tellurium nanowires, which is applied in ion implantation plating, metal material coating process, coating, etc.

Inactive Publication Date: 2009-05-20
BEIHANG UNIV
View PDF0 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The currently reported tellurium array structure prepared by the gas phase method in the world is the tellurium nanorods prepared by Shashwati Sen and Paritosh Mohanty when preparing tellurium nanotubes. The diameter of the rods

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation of tellurium nano-wire array based on physical vapour deposition
  • Preparation of tellurium nano-wire array based on physical vapour deposition
  • Preparation of tellurium nano-wire array based on physical vapour deposition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Put the tellurium Te elemental powder with a particle size of 5-10 μm into the tungsten boat 2 of the vacuum chamber 1 of the vacuum coating machine, place the glass substrate 3 on the sample stage 4, and adjust the distance d=10cm between the glass substrate 3 and the tungsten boat 2 ;

[0022] Seal the vacuum chamber 1, fill the vacuum chamber 1 with nitrogen for 3 minutes and stop (the nitrogen can be filled twice), then vacuumize the vacuum chamber 1 to make the vacuum degree in the vacuum chamber 1 reach 2.0×10 -4 Pa;

[0023] Set the deposition rate on the vacuum coating machine to 4nm / min, and the deposition time to 8h;

[0024] Turn on the AC power supply, adjust the output current to 165A; begin to deposit tellurium nanowire array films on the glass substrate 3 by physical vapor phase deposition.

[0025] After the preparation is completed, the AC power is turned off, and after natural cooling to room temperature, the glass substrate 3 with the tellurium nano...

Embodiment 2

[0029] Put the tellurium powder with a particle size of 5-20 μm into the tungsten boat 2 of the vacuum chamber 1 of the vacuum coating machine, place the glass substrate 3 on the sample stage 4, and adjust the distance d=6cm between the glass substrate 3 and the tungsten boat 2;

[0030] Seal the vacuum chamber 1, fill the vacuum chamber 1 with nitrogen for 5 minutes and then stop, then evacuate the vacuum chamber 1 to make the vacuum degree in the vacuum chamber 1 reach 3.0×10 -4 Pa;

[0031] Set the deposition rate on the vacuum coating machine to 8nm / min, and the deposition time to 5h;

[0032] Turn on the AC power supply, adjust the output current to 175A; begin to deposit and prepare the tellurium nanowire array thin film on the glass substrate 3 .

[0033] After the preparation is completed, the AC power is turned off, and after natural cooling to 28° C., the glass substrate 3 with the tellurium nanowire array thin film is taken out.

[0034] Adopt X-ray diffractometer...

Embodiment 3

[0037] Put the tellurium powder with a particle size of 10-20 μm into the tungsten boat 2 of the vacuum chamber 1 of the vacuum coating machine, place the glass substrate 3 on the sample stage 4, and adjust the distance d=9cm between the glass substrate 3 and the tungsten boat 2;

[0038] Seal the vacuum chamber 1, fill the vacuum chamber 1 with nitrogen for 3 minutes and then stop, then evacuate the vacuum chamber 1 to make the vacuum degree in the vacuum chamber 1 reach 5.0×10 -5 Pa;

[0039] Set the deposition rate on the vacuum coating machine to 12nm / min, and the deposition time to 6h;

[0040] Turn on the AC power supply, adjust the output current to 170A; begin to deposit and prepare the tellurium nanowire array thin film on the glass substrate 3 .

[0041] After the preparation is completed, the AC power is turned off, and after natural cooling to 22° C., the glass substrate 3 with the tellurium nanowire array thin film is taken out.

[0042] Adopt X-ray diffractomet...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Diameteraaaaaaaaaa
Diameteraaaaaaaaaa
Diameteraaaaaaaaaa
Login to view more

Abstract

The invention discloses a preparation method of tellurium nano wire array based on physical vapor deposition. By adjusting the magnitude of current output by alternative power supply and the distance of glass substrate and tungsten boat, a thin film with tellurium nano wire array structure is directly deposited on the glass substrate by thermal evaporation of tellurium material in a vacuum chamber; the whole deposition technique has simple process, low cost and easy scale production; and the obtained tellurium nano wire array has uniform structure, thus effectively guaranteeing uniform distribution of nanophase.

Description

technical field [0001] The invention relates to a method for preparing a tellurium nanowire array, more particularly, a method for preparing a tellurium nanowire array on a glass substrate by a physical vapor deposition method. Background technique [0002] Arranging semiconductor one-dimensional nanomaterials in a certain way to form an array system is the frontier and hotspot of nanomaterials and nanostructure research, and it is the material basis for the design of next-generation nanostructure devices. Tellurium (Te) is a semiconductor with a narrow bandgap width, and it is also a precursor for the production of many functional materials such as thermoelectric materials, piezoelectric materials, photoconductive materials, etc. Therefore, the construction of its ordered array system is very important for large-scale functional devices such as scanning probes, The development tools of field emitters, sensors, etc. are of special significance. [0003] The currently report...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C23C14/06C23C14/24C23C14/54
Inventor 邓元宋袁曾张艳景王广胜杨萌
Owner BEIHANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap