Method for preparing ag nanowire array electrodes by magnetron sputtering-mask-assisted deposition

Abstract

The invention relates to a method for preparing an Ag nanowire array electrode according to magnetron sputtering-masking assisted deposition, in particular to a method for preparing Ag films according to a magnetron sputtering and electrode masking assisted deposition technology. Metal electrode Ag target materials, which are connected, are deposited on an upper AlN substrate and a lower AlN substrate respectively; the sizes of both the upper AlN substrate and the lower AlN substrate are (1-40 mm)*(1-35 mm); then through alignment, p-Bi-Sb-Te film thermocouple arms and n-Bi-Te-Se film thermocouple arms are respectively deposited on prepared electrodes under the assistance of thermoelectric material masking; finally, several to thousands of p-Bi0.5Sb1.5Te3 film thermocouple arms and several to thousands of n-Bi2Se0.3Te2.7 film thermocouple arms, which are arranged on the upper AlN substrate and the lower AlN substrate respectively, form several to thousands of pairs of micro-devices adopting p-n structures through up-down bonding. Performance tests show that compared with the performance of a device with an electrode adopting the conventional structure, the performance of a device with the nanowire array electrode is improved significantly. Therefore, introduction of the Ag nanowire array electrode is an effective way to improve the performance of a thermoelectric micro-device. The method is simple in manufacture process, simple and convenient to operate, low in requirements on production environment, and very remarkable in practical value and economic benefits.

Description

technical field [0001] The invention relates to a technical method for preparing silver (Ag) nanowire arrays by simple physical vapor deposition method (magnetron sputtering), and introducing Ag nanowire array electrodes into devices through mask-assisted deposition; that is, it involves a A method for preparing Ag nanowire array electrodes by magnetron sputtering-mask assisted deposition. Background technique [0002] At present, the thermoelectric conversion efficiency that thermoelectric cells can achieve is only 4% to 6%, and most of the heat energy is wasted. Due to the low conversion efficiency, existing thermoelectric devices cannot fully meet the cooling requirements of high-power devices with increasing integration. The power density of thermoelectric devices is inversely proportional to the feature size, so micro thermoelectric devices can solve this difficulty well. However, the contact resistance and thermal resistance between metal electrodes and semiconductor...

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Problems solved by technology

[0004] The previous results revealed the synthesis of Ag nanowires. Because the nanowires prepared by chemical methods have many defects or need to remove the hard template, the performance of the nanowires is average, and it is difficult to form a large-scale production. It is also very difficult to introduce it into the device as a Electrode application; however, this is an innovative challenge, because the simple magnetron sputtering method to assemble Ag nanowire array structure films has not been reported, and there is no patent for using mask-assisted deposition of Ag nanowire arrays to introduce devices as electrodes with literature

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