Ultra-low power consumption ferroelectric transistor memory based on two-dimensional organic functional materials and its preparation method

Abstract

The invention discloses an ultra-low power consumption ferroelectric transistor memory based on a two-dimensional organic functional material and a preparation method thereof. An aluminum oxide insulating layer is grown on a substrate by an atomic beam deposition method, and then an antisolvent is used to An ultrathin crystalline ferroelectric polymer film was prepared at room temperature by assisted crystallization, and then an ultrathin layer of polymethyl methacrylate and an ultrathin layer of dioctyl Dioctylbenzothiophene benzothiophene, and finally a gold film was transferred onto the dioctylbenzothiophene benzothiophene layer as source and drain electrodes using a non-invasive gold film transfer process. The present invention uses the quasi-two-dimensional ferroelectric polymer crystalline film as the dielectric layer and the two-dimensional organic molecular crystal C 8 ‑BTBT material is used as a semiconductor layer to prepare fast transistor memory, which can greatly reduce the power consumption of ferroelectric organic field effect transistor memory, and has low-voltage operation capability and fast storage capability.

Description

technical field [0001] The invention relates to the fields of two-dimensional organic functional materials, ferroelectric polymers, semiconductor technology, organic transistor memory and the like, in particular to an ultra-low power consumption organic non-volatile memory and its preparation. Background technique [0002] The development of modern electronic technology has put forward higher and higher requirements for information storage, such as high speed, low energy consumption and high integration density. With the continuous emergence of emerging functional information technologies such as smart terminals and cloud services, advanced sensing and Internet of Things technologies, and big data management, memory has become an important cornerstone to support changes in the field of information science in the current era. At present, silicon-based electrical memory based on traditional semiconductors has the advantages of fast storage and long-term storage of information,...

AI Technical Summary

Problems solved by technology

However, Fe-OFET memory power consumption is generally at the nJ level

The commonly used ferroelectric polymer P (VDF-TrFE) film is generally 200-1000nm, so a higher voltage is required to achieve the control of polarization reversal (30-100V), and the high operating voltage not only produces high energy consumption, but also leads to unreliable Long-term stability of the device and incompatibility with the requirements of portable products such as mobile data storage, consumer electronics terminals, and solid-state drives

On the other hand, the metal / semiconductor layer interface still has the problem of difficult carrier injection, resulting in extremely high contact resistance, and the related heat loss problem needs to be solved urgently

Furthermore, charge carrier accumulation and depletion in the channel determine the transition between on-off states in ferroelectric organic field-effect transistors, and the slower switching behavior is detrimental to the energy-efficient operation of the device

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