5results about How to "Reduce parasitic effects" patented technology

The application relates to a full GaN power electronic monolithic integrated circuit and a preparation method thereof, which comprises, from bottom to top, an insulating composite substrate, an AlN layer, a Si layer, a GaN / AlGaN buffer layer, a GaN layer and an AlGaN layer; a 2DEG layer is formed between the GaN layer and the AlGaN layer; the AlGaN layer is etched, a p-GaN layer is grown; a p-GaN layer gate portion is etched and filled with a passivation layer, and a gate metal is grown; source metal and drain metal are respectively grown on both sides of the p-GaN layer gate area; a deep groove is arranged between a driving circuit and a low-voltage tube, between a high-voltage tube and the low-voltage tube, and a medium is filled in the deep groove; and the full GaN power electronic monolithic integrated circuit is obtained through a top via and an interconnection process. The application can realize high efficiency and low power consumption, low parasitic effect, and reduce leakage current and switching loss.

A semiconductor device (100) for controlling an electric current flowing between a source terminal (102) and a drain terminal (104) and a method for forming such a device are disclosed. The semiconductor device is formed from a layer stack of GaN layers, wherein a vertical junction field effect transistor JFET structure (120) and a lateral high electron mobility transistor HEMT structure (130) are provided to control the electric current.

The utility model discloses a kind of power modules, including circuit board assembly and power chip assembly;Wherein, circuit board assembly includes first circuit board, third circuit board and the second circuit board being arranged between the two, power chip assembly includes the first power chip being arranged between first circuit board and second circuit board and the second power chip being arranged between third circuit board and second circuit board;Second circuit board is equipped with metal component, first power chip and second power chip are electrically connected with the metal component;First circuit board is equipped with the first insulating heat-conducting component for the heat dissipation of first power chip, and third circuit board is equipped with the second insulating heat-conducting component for the heat dissipation of second power chip.The power module of the utility model has the advantages of small packaging area and low parasitic effect.

The utility model discloses a kind of chip top layer structures, comprising: multiple chip modules, each chip module includes multiple pins;And wiring unit, including multiple signal lines for being connected with the pin of multiple chip modules, wherein, wiring unit includes first wiring area and second wiring area, logic signal line, noise signal line and clock signal line in the multiple signal lines are arranged in the first wiring area, sensitive signal line and quiet signal line in the multiple signal lines are arranged in the second wiring area, first wiring area and second wiring area are isolated by continuous isolation band between it.This chip top layer structure of the utility model realizes the inhibition between coupling noise of sensitive signal line and noise signal line and clock signal line and parasitic effect between signal line in layout level, while significantly reduce wiring resource occupancy and design complexity.

The application relates to the technical field of filters, in particular to a high-rectangular-coefficient filter and a design method. The filter comprises resonant structures T1 / T2, input / output feeding structures and open-circuit branches arranged on a dielectric substrate; the two open-circuit branches are distributed in left-right axis symmetry, the open-circuit branches are connected with the input / output feeding structures, the input / output feeding structures are connected with the first resonant unit and the fourth resonant unit respectively; and the open-circuit branches are in L-shaped bending state, and a coupling relationship is formed between the open-circuit branches and the resonant structures T1 / T2. The application aims to improve the out-of-band suppression of the filter under the condition that the filter order and the size are unchanged.