A plane capacitance resonator and its making method

A technology of resonators and capacitors, which is applied in the field of planar capacitor resonators and its preparation, can solve the problem of resonance loss limiting the Q value of flexible nanomechanical resonators, manufacturing process, manufacturing cost restrictions, wide application, and cantilever beam sensor mass detection sensitivity reduction etc. to achieve the effects of reducing equivalent motion impedance, improving detection sensitivity, and reducing parasitic effects

Inactive Publication Date: 2008-02-20
PEKING UNIV
View PDF0 Cites 30 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In a liquid environment, due to the effect of huge viscous damping, the mass detection sensitivity of the cantilever beam sensor is reduced by several orders of magnitude, and the typical Q value is only 2-5
The resonance loss limits the improvement of the Q value of the flexible nanomechanical resonator, while the preparation process and preparation cost limit its wide application

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A plane capacitance resonator and its making method
  • A plane capacitance resonator and its making method
  • A plane capacitance resonator and its making method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] Fig. 5 is the preparation flowchart of the resonator of the present invention, and specific steps are as follows:

[0051] 1) Using SOI silicon wafer 1 as the processing substrate, the device layer 8 is N-type, (100) crystal plane, the thickness of the device layer 8 is 10 microns and 20 microns respectively, and the thickness of the middle buried oxide layer 9 is 3 microns (Fig. 5a );

[0052] 2) On the surface of SOI silicon wafer 1 device layer 8, LPCVD (low pressure chemical vapor deposition) a layer of SiNx with a thickness of 150nm, use photoresist for the first photolithography, and dry in a reactive ion etching system (RIE) SiNx is etched by method to form a SiNx insulating layer 6, and the SiNx insulating layer 6 is used to isolate the polysilicon pad 13 from the substrate 1 (FIG. 5b);

[0053] 3) The second photolithography, patterning the positions of the pole plates 31, 41 and the resonator 2 of the driving electrode 3 and the sensing electrode 4, and using...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
widthaaaaaaaaaa
Resonant frequencyaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The utility model discloses a planar capacitance resonator and the related preparation method, comprising a resonance body, a sensor electrode, a driving electrode and a related supporting substrate. The resonator is a suspended structure, and is fixed on the substrate through an anchor point; each of the sensor electrode and the driving electrode comprises an electrode plate and a solder pad, the electrode plates of the sensor electrode and the driving electrode are arranged on the two side of the resonance body separately and keep a clearance from the resonance body, the clearance between the plates performs as the media to form the capacitor structure; the solder pads of the sensor electrode and the driving electrode are fixed on the insulating medium layer, and the solder pads are provided with metal electrodes; the insulating medium layer are fixed on the substrate. The clearance between the any two electrodes of the capacitors is narrower than 100nm. The utility model has the advantages of extremely high dynamic performance, the harmonic resonance frequency exceeding 100 MHz, and the Q factor up to 105.

Description

technical field [0001] The invention relates to a planar capacitance resonator and a preparation method thereof. Background technique [0002] MEMS resonators manufactured by micromachining technology have the advantages of low power consumption, high Q value, wide frequency band, small size, and compatibility with CMOS technology, so people are gradually using MEMS resonators to replace traditional off-chip, large Volumetric frequency selection devices to meet the needs of low power consumption, low cost, high performance, and highly integrated wireless communication technology. On the other hand, because the resonance frequency of the resonator has very high sensitivity to environmental parameters, MEMS resonators also have great potential in high-sensitivity resonance sensing detection, such as biochemical sensors, pressure sensors, accelerometers, gyroscopes and other devices. The signal can be detected by resonance. At present, the biggest obstacle to an integrated si...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/24H03H3/007B81B7/02B81C1/00
Inventor 于晓梅汤雅权刘毅马盛林易玉良王兆江
Owner PEKING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap