14 results about "Low offset" patented technology

The present application relates to the technical field of electronic circuit, and especially relates to a readout circuit of a terahertz detection array, which comprises: a readout link at least comprising a current feedback instrumentation amplifier, a programmable gain amplifier and an incremental analog-to-digital converter connected in sequence; the current feedback instrumentation amplifier amplifies the signal output by the detector and outputs a first-stage amplified signal, the current feedback instrumentation amplifier comprises an instrumentation amplifier body and a first ripple suppression module, the first ripple suppression module comprises a first redundant segmented current steering DAC and a first DAC code register; the programmable gain amplifier further amplifies the first-stage amplified signal, the programmable gain amplifier comprises a gain amplifier body and a second ripple suppression module, and the second ripple suppression module comprises a second redundant segmented current steering DAC and a second DAC code register. The present application effectively reduces the chip area and power consumption while ensuring that the readout circuit of the terahertz detection array has high gain, low noise and low offset.

A signal processing system may include a sensor readout channel configured to convert an electronic signal into a digital quantity. The sensor readout channel may include a sigma-delta modulator having a modulator input and a modulator output, first system-level chopping switches located at the modulator input, an auxiliary path comprising an analog-to-digital converter (ADC) having an auxiliary path input and an auxiliary path output, the auxiliary path input configured to receive as its input signal a signal output by a memory element of the sigma-delta modulator, second system-level chopping switches located downstream of the sigma-delta modulator and the auxiliary path, and a signal combiner configured to combine a modulator output signal generated by the sigma-delta modulator with an auxiliary path output signal generated by the auxiliary path to generate a combined output signal.

A reference buffer is disclosed. The reference buffer includes an amplifier configured to amplify a difference between a reference output voltage and a reference input voltage during a closed-loop phase of the reference buffer. The reference buffer also includes a sample circuit configured to sample an amplifier output voltage during the closed-loop phase. The reference buffer further includes a buffer circuit having a buffer input coupled to the sample circuit and a buffer output configured to provide the reference output voltage. The reference buffer also includes first and second switch circuits. The first switch circuit is configured to isolate the sample circuit from the output stage of the amplifier during an open-loop phase of the reference buffer. The second switch circuit is configured to isolate the input stage from the output of the reference buffer during the open-loop phase.

The invention discloses a sensing amplification circuit, a memory, a driving method and electronic equipment, relates to the technical field of semiconductors, and is used for reducing offset noise and improving sensing sensitivity. The sensing amplification circuit comprises a sensing amplifier, a first control sub-circuit, a second control sub-circuit and a first charging circuit, required potentials are charged into a first bit line and a second bit line through the first charging circuit, and the sensing amplifier is isolated from the first bit line and the second bit line through the first control sub-circuit and the second control sub-circuit. According to the embodiment of the invention, the influence of threshold voltage offset caused by mismatch of electrical parameters of a transistor in the sensing amplifier on the potentials of the first bit line and the second bit line can be avoided, the problem of fluctuation of the potentials of the first bit line and the second bit line is solved, the offset noise is further reduced, and the sensing sensitivity is improved.

This invention relates to a low-temperature drift, high-precision heat flux conversion circuit, characterized by comprising: using two operational amplifiers U1A and U1B with identical parameters on the same substrate, whose temperature drifts are similar, and setting the two operational amplifiers to be in opposite directions to cancel out the effects of their offset voltages and temperature drifts, first forming a fully differential amplifier circuit to amplify the small signal from the heat flux sensor; the amplified signal is then passed through two other operational amplifiers U2A and U2B on the same substrate to form an additive bias circuit, obtaining a high-precision voltage signal V0 with adjustable bias, low temperature drift, and low offset. The beneficial effect of this invention is that it reduces the output offset voltage, thereby reducing the impact of input offset voltage and temperature drift on the accuracy of heat flux acquisition, and improving the accuracy of heat flux sampling.

The application relates to low temperature drift low adjustment RC oscillator, relates to integrated circuit technology, and the application comprises reference source circuit, the reference source circuit comprises reference current signal output end and reference voltage output end, characterized by further comprising shared comparison circuit, first capacitive oscillator with discharge switch, second capacitive oscillator with discharge switch, first comparator, second comparator and RS trigger, the application offsets temperature changes of the reference current and the reference voltage, so that the output clock frequency of the oscillator circuit is basically not changed with temperature, the oscillator circuit structure is symmetrical, and the error caused by the comparator hysteresis to the clock frequency is eliminated.

To provide an amplifier or the like which consumes less current and has a lower offset than a conventional technique.SOLUTION: A control circuit of a dynamic amplification device connects a load circuit and a current source to a differential amplifier, short-circuits and then opens each input terminal and each inverting output terminal of the differential amplifier, and holds each input voltage and an error of the differential amplifier in each sampling capacitor. A sampling operation of canceling an error of the differential amplifier, a reset operation of disconnecting the load circuit and the current source and connecting each inverting output terminal to a fixed potential, and an amplification operation of amplifying a difference between input voltages after the sampling operation by connecting the differential amplifier to the current source, setting each inverting output terminal of the differential amplifier to a high impedance, and integrating each output capacitor of the differential amplifier by either charging or discharging according to each input voltage of the differential amplifier are executed.SELECTED DRAWING: Figure 2

The invention discloses a low-temperature-drift low-offset curvature compensation band-gap reference circuit which comprises a starting circuit, a band-gap main body circuit and a second-order curvature compensation circuit which are connected in sequence. The starting circuit comprises PMOS (P-channel Metal Oxide Semiconductor) tubes M6, M8, M10, M11, M12, M17, M18 and M19 and NMOS (N-channel Metal Oxide Semiconductor) tubes M5, M7, M9, M13, M14, M15 and M16; the band gap main body circuit comprises PMOS (P-channel Metal Oxide Semiconductor) tubes M1, M2, M20, M22, M23, M24, M25, M26, M27, M28 and M29, NMOS (N-channel Metal Oxide Semiconductor) tubes M3, M4, M21 and M42, triodes Q1, Q2, Q3 and Q4, and resistors R1 and R2; and the second-order curvature compensation circuit comprises PMOS (P-channel Metal Oxide Semiconductor) tubes M30, M31, M33, M34, M36, M37, M38, M39, M40 and M41, NMOS (N-channel Metal Oxide Semiconductor) tubes M32 and M35, and resistors R3 and R4.

A deadtime generator configured to output a pair of non-overlapping clock signals. A circuit is provide that includes an input node for receiving a clock signal; a first signal path coupled to the input node and having a first output node for outputting a first modified clock signal, wherein the first signal path includes a feedback node coupled to an input of a feedback inverter; a second signal path coupled to the input node and having a second output node for outputting a second modified clock signal, wherein second signal path includes a Low-to-High skewed inverter; and a feedback signal path coupled to second signal path and having a High-to-Low skewed inverter with an output coupled to a gate of at least one transistor, wherein an output of the at least one transistor is coupled to the feedback node.

The application provides an ultra-low temperature drift bandgap reference voltage source compensation circuit, and belongs to the technical field of analog integrated circuits.The circuit comprises a bandgap reference main circuit, a high-order temperature compensation circuit, a chopper operational amplifier module and a trimming circuit module;the bandgap reference main circuit adopts a matching BJT with an emission area ratio of 47, and generates a first-order zero-temperature-coefficient reference voltage in combination with a low-temperature-coefficient resistance network;the high-order temperature compensation circuit generates a compensation current by copying a node voltage of the chopper operational amplifier, so as to offset high-order temperature nonlinear error;the chopper operational amplifier adopts a three-level nested double-channel topology, so as to realize low offset, low noise and high gain;the trimming circuit adopts a parallel and series combined trimming structure, so as to complete full-process-angle curvature correction.The temperature drift coefficient under the full-process-angle is as low as 0.25-0.33ppm / ℃, and the low-frequency noise density is 18nV / ;the circuit has the advantages of ultra-low temperature drift, low noise, low power consumption and high stability, and is suitable for various high-precision analog and mixed-signal integrated circuits.

The invention discloses an operational-amplifier-free band-gap reference circuit with high power supply rejection ratio and low offset, which belongs to the field of electronic circuits and comprises a pre-voltage-stabilizing circuit, an operational-amplifier-free band-gap reference circuit, a segmented temperature compensation circuit and a starting circuit. The starting circuit is connected with the pre-voltage-stabilizing circuit and the operational-amplifier-free band-gap reference circuit, the pre-voltage-stabilizing circuit is connected with the input end of the operational-amplifier-free band-gap reference circuit, and the output end of the operational-amplifier-free band-gap reference circuit is connected with the segmented temperature compensation circuit. The band-gap reference circuit adopts an operational-amplifier-free structure and a negative feedback clamping technology, and has a simple circuit structure, small circuit imbalance and a high power supply rejection ratio; according to the band-gap reference circuit, the pre-voltage-stabilizing circuit greatly improves the power supply rejection ratio which cannot be achieved by a traditional band-gap reference circuit; the segmented temperature compensation circuit generates high-order current, counteracts part of nonlinearity in PTAT current, and reduces the temperature coefficient of the reference voltage.

Described herein are techniques that improve efficiency of analog-to-digital conversion circuits by reducing idling time, during which the ADC circuit is not converting an analog signal to a digital representation, which reduces associated power consumption from keeping the ADC circuit running during idling time. In some embodiments, chop circuits may be used in combination with a plurality of track-and-hold circuits to acquire one polarity of an input signal and convert another polarity of the input signal during a same sampling period. A chop circuit may be configured to alternate between generating a first polarity of the input signal and a second polarity of the input signal. A first T / H circuit may be configured to acquire one polarity of the input signal from the chop circuit while a second T / H circuit provides another polarity of the input signal, previously acquired from the chop circuit, to an ADC for conversion.

Provided is an amplification device or the like having low current consumption and low offset as compared with conventional technology. A control circuit of a dynamic-type amplification device executes: a sampling operation in which a load circuit and a current source are connected to a differential amplifier, each input terminal and each inverting output terminal of the differential amplifier are short-circuited and then opened, and each input voltage and an error of the differential amplifier are held in each sampling capacitor, thereby cancelling the error of the differential amplifier; a reset operation in which the load circuit and the current source are disconnected, and each inverting output terminal is connected to a fixed potential; and an amplification operation in which the differential amplifier is connected to the current source, each inverting output terminal of the differential amplifier is set to high impedance, and each output capacitor of the differential amplifier is integrated by either charging or discharging according to each input voltage of the differential amplifier, thereby amplifying a difference between the input voltages after the sampling operation.

The invention discloses a CMOS (Complementary Metal Oxide Semiconductor) process-based high-order temperature compensation band-gap reference circuit with a high power supply rejection ratio, which comprises a starting and biasing circuit, an operational amplifier circuit and a band-gap reference main body circuit which are connected in sequence, the circuit can simultaneously realize low temperature coefficient, low offset voltage and high power supply rejection ratio in a wide temperature range, the bit number requirement of the trimming circuit is reduced by reducing the offset voltage, the chip area is effectively controlled, and the increasingly improved performance and cost requirements of a modern integrated circuit on a reference voltage source are met.