The invention relates to the technical field of semiconductors, in particular to a Schottky and ohmic mixed drain enhanced GaN
high electron mobility
transistor, which comprises a
metal source, a
metal gate, a P-GaN region, a first Schottky drain, an ohmic drain, a second Schottky drain, an AlGaN
barrier layer, a GaN channel layer, an AlGaN buffer layer, an AlN nucleating layer and a substrate layer. The first Schottky drain
electrode contact
metal has the effect similar to a field plate,
channel modulation and
electric field modulation of the second Schottky drain
electrode contact etched to the GaN channel layer can effectively optimize
electric field distribution of a drain end, and withstand
voltage of the device is improved; meanwhile, the current can be more effectively guided to flow to the whole ohmic region under the action of improving
electric field distribution through contact of the first Schottky drain
electrode and the second Schottky drain electrode, so that
electron injection is more sufficient, the effective
channel width is increased,
current crowding can be remarkably improved, the on-resistance is reduced, the output current is improved, and the reliability of the device is improved. And the problem of compromise contradiction between the
on resistance and the withstand
voltage of the device is solved.