The invention provides a three-dimensional memory device, a preparation method thereof and
electronic equipment. The three-dimensional memory device comprises a substrate; a plurality of
memory cell layers and a plurality of isolation
layers; each storage unit layer at least comprises a plurality of storage unit groups, each storage
unit group at least comprises a
common word line and a plurality of storage units, each storage unit comprises a
transistor and a
capacitor, and the
transistor is a surrounding gate
transistor. The three-dimensional stacking technology is introduced, the memory units are stacked in the vertical direction to improve the overall density of the memory, meanwhile, the
indium gallium zinc oxide with the wide-band-gap characteristic is used as a channel material to reduce transistor leakage current, so that the
data retention time is prolonged, in addition, the structures of the memory units are optimized, and the
memory performance is improved. The problem that
capacitance signals of a bottom layer device are difficult to read is solved by utilizing a vertical
bit line design, meanwhile, the grid control capability is enhanced by combining a surrounding grid transistor structure, the performance of a transistor device is improved, and performance optimization and stability improvement of a memory device are realized.