Technique and arrangement for low dislocations germanium mono-crystal with crucible lowering down czochralski method

Abstract

The invention discloses a craft to grow misplacement germanium monocrystalline with reduction pot vertical pulling method and device in growing single crystal technical domain, which is characterized by the following: setting the device as vertical pulling oven; fixing copple on the top of copple rod in the middle of the oven body; fixing main heater and bottom heater at around and bottom of the copple; compositing thermal insulation cover with side thermal insulation screen and upper thermal insulation screen; covering at the surrounding of the main heater and the bottom heater; hanging seed chuck on the upper copple; putting high-purity germanium raw material into copple; assembling the seed crystal on the seed chuck; decreasing pot position in the course of pulled crystal; growing crystal from up to down; realizing critical technology of crystal pulling; resolving contradictory between bottleneck and dislocation multiplication; getting low offset germanium monocrystalline with big size (above four inch); contenting demand of space high effective GaAs / Ge solar battery substrate slice.

Description

technical field [0001] The invention belongs to the technical field of growing single crystals, and in particular relates to a low-dislocation germanium single crystal growth process and device mainly used as a space-efficient GaAs / Ge solar cell substrate by the Czochralski method. Background technique [0002] The Czochralski method, also known as the Czochralski method, is the main method for growing semiconductor single crystals. In the Czochralski single crystal furnace, the seed crystal is introduced into the crucible containing the melt as a non-uniform crystal nucleus, and then the thermal field is controlled to rotate the seed crystal and lift it up slowly, and the single crystal is placed under the seed crystal in the direction of the seed crystal Grow up to obtain the desired single crystal. Generally, in the process of growing single crystals by Czochralski method, the position of the crucible is kept unchanged or the position of the crucible is raised, and the t...

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Problems solved by technology

The Czochralski method was invented by Czochralski for growing metal single crystals (Czochralski J.Z PhysChem, 1917, 92: 219), and later Teal and Little transplanted it to germanium single crystal growth (Teal G K, Little J B. PhysRev, 1950, 78: 647 ), the Umicore company in Belgium grows dislocation-free germanium single crystals by the Czochralski method, especially the production technology of large-size substrates that is conducive to reducing battery costs has not yet been published

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