19 results about "Common base" patented technology

The invention belongs to the technical field of stability compensation circuits, and particularly relates to a stability compensation circuit structure of a high-speed operational amplifier, which is characterized by comprising a function module, a first control module, a second control module, a third control module, a fourth control module and a fourth control module, and the function module comprises an input stage, a differential common-base gain stage, a common-base level converter module and an output stage, and the stability compensation assembly comprises a dual-frequency load unit which is matched with the functional module and comprises a low-frequency load branch and a high-frequency load branch which are connected in parallel. Through the synergistic effect of the double-frequency load unit and the pole regulation and control capacitor, gain segmentation regulation and control of low-frequency high gain and high-frequency fast attenuation are achieved, the open-loop gain of the operational amplifier breaks through the limitation of 30dB of an existing HBT single-stage operational amplifier, and meanwhile the problem that high-frequency phase shift changes too fast is effectively restrained; through simulation verification, the phase margin can reach 67 degrees, the stability requirement of 45-60 degrees and above of an analog circuit is met, and the core contradiction that the high-gain bandwidth and the phase margin of an HBT device are difficult to balance is thoroughly overcome.

The invention provides an offset-feed-type double-antenna combined structure configuration with co-reference of an auxiliary reflector and feed sources. The offset-feed-type double-antenna combined structure configuration comprises two main reflecting surfaces, two auxiliary reflecting surfaces, two sets of feed sources, an antenna tower, a base and a waveguide assembly, the two main reflecting surfaces and the antenna tower are arranged on the base in an L shape, the two auxiliary reflecting surfaces, the two sets of feed sources and the waveguide assembly are compactly installed on the antenna tower, and the main reflecting surfaces, the auxiliary reflecting surfaces and the feed sources keep a specified angle direction to achieve antenna ground detection. Factors of limited outer envelope, compact space, weight reduction and the like of a satellite to the ground and double antennas are comprehensively considered, the layout is compact, and installation constraints of various satellite surfaces can be fully adapted; the auxiliary reflecting surface and the feed source share one set of antenna tower, so that the weight and envelope of the system are greatly reduced, the common-reference installation precision is high, and the directional performance of the antenna is ensured; the antenna tower is of a closed structure, provides abundant installation interfaces and good heat dissipation capability for the feed source and the waveguide assembly, and is higher in adaptability.

The invention discloses a transistor amplification circuit experiment board and an experiment system. Comprising a printed circuit board, a transistor, an adjustable resistor, a plurality of wiring terminals and a plurality of pairs of contact pin sleeves are arranged on the printed circuit board, and two contact pin sleeves of each pair of contact pin sleeves are electrically isolated; an amplifying circuit with a common emitter, a common collector or a common base can be constructed by selecting a signal input port and a signal output port and inserting a capacitor and a resistor into each butt joint pin sleeve to keep an open circuit or a short circuit; the experiment system further comprises a static working voltage display circuit which is used for measuring power supply voltage and static working voltage of the base electrode, the collector electrode and the emitter electrode of the transistor. According to the invention, various bias scheme experiments such as a basic common-emitter amplification circuit experiment with an emitter grounded and a common-emitter amplification circuit experiment with an emitter with alternating current and direct current negative feedback can be carried out, and the device has the advantages that the resistors and the capacitors are all self-selected, and the connection relation of components is intuitive; students can fully understand and master the working characteristics of the transistor amplification circuit.

The application relates to a high-isolation frequency distribution circuit based on common-base amplification, which comprises a gain control amplifier, a distributor, a common-base amplification network and a filter; the gain control amplifier realizes gain control amplification of an input frequency signal and attenuated input to the distributor; the distributor realizes power distribution and isolation of the frequency signal without additional noise, and realizes multi-way output, each way of output being connected with a common-base amplification network; the common-base amplification network improves the reverse isolation characteristic of the frequency signal through the common-base triode current buffer characteristic, realizes high-isolation between multi-way output frequency signals and inputs the frequency signals to the filter; the filter suppresses the out-of-band noise of the frequency signal to reduce the harmonic and the out-of-band noise of the frequency signal. The application can realize amplification, distribution, isolation and filtering of low-noise frequency signals, improves the integration of the output frequency signal of the time-homogeneous equipment, and has the advantages of high isolation, low additional noise and the like.

An amplifier (700) includes a common emitter stage coupled to a first input (720) and a second input (725), a common base stage coupled to the common emitter stage and a first output (730) and a second output (735), and a cancellation path coupled to the common emitter stage and the common base stage and the first output and the second output. The cancellation path generates a first cancellation signal 180 degrees out of phase with a first leakage signal at the first output and a second cancellation signal 180 degrees out of phase with a second leakage signal at the second output. The cancellation path includes a first cancellation transistor (M6) coupled to the common emitter stage and the common base stage and the first output and a second cancellation transistor (M5) coupled to the common emitter stage and the common base stage and the second output.

This invention discloses a method for improving the stability and gain of a millimeter-wave differential amplifier core. The stability and gain improvement comprises common-mode rejection enhancement and differential-mode gain enhancement. The millimeter-wave differential amplifier core includes a common-emitter amplifier circuit composed of a first transistor and a second transistor, and a common-base amplifier circuit composed of a third transistor and a fourth transistor. A first bias resistor and a second bias resistor are connected in series between the two bases of the first and second transistors. A third bias resistor and a fourth bias resistor are connected in series between the two bases of the third and fourth transistors. The emitter of the third transistor is connected to the collector of the first transistor, and the emitter of the fourth transistor is connected to the collector of the second transistor. A bridging capacitor is also connected between the two bases of the third and fourth transistors. This invention significantly improves the differential-mode gain characteristics of the millimeter-wave band amplifier core while simultaneously enhancing common-mode rejection by combining series capacitors with common-mode gain reduction.

Described herein is a terminal assembly (1) configured to mate in conductive contact with an electrically conductive member (6), and an electrical connector (2), the terminal assembly (1) comprising a terminal base (11) and a contact arm (12) secured to the terminal base (11), the contact arm (12) comprising a common base plate (121) secured to the terminal base (11) and two sets of contact beams (122) arranged in mirror symmetry with respect to a longitudinal axis (L) of the common base plate (121), each set of contact beams (122) configured to extend from a respective side of the common base plate (121) and to be bent back.

Aspects of the subject disclosure may include, for example, a common emitter stage having a differential input configured to receive an input signal from an input transmission line, a common base stage coupled with the common emitter stage and having a differential output configured to provide a differential output signal to an output transmission line, and a biasing network to bias the common base stage, the biasing network including components selected to limit common mode gain of the common base stage at relatively high frequencies of interest without affecting a differential mode gain of the common base stage. Other embodiments are disclosed.

This invention provides a ground-insulated acceleration and force composite sensor, relating to the field of sensor technology. It includes a housing containing an acceleration module and a force-sensitive module. The housing includes a common base and a sealed outer shell. The common base has an annular inner cavity and a positioning shaft. The force-sensitive module is installed in the annular inner cavity, and the acceleration module is mounted on the positioning shaft. The sealed outer shell surrounds the acceleration module. The force-sensitive module includes an insulating ring A. An insulating sheet A, an electrode sheet A, a force-sensitive element, an electrode sheet A, and an insulating sheet A are stacked sequentially from bottom to top outside the insulating ring A. The acceleration module includes an insulating ring B, which is sleeved outside the positioning shaft. An insulating sheet B, an electrode sheet B, an acceleration-sensitive element, an electrode sheet B, and an insulating sheet B are stacked sequentially along the axial direction outside the insulating ring B. This invention solves the problems of signal crosstalk and low testing accuracy between the acceleration module and the force-sensitive module in the prior art.

A terminal assembly configured to fit with a conductive member to form a conductive contact therebetween. The terminal assembly comprises a terminal base and a contact arm fixed to the terminal base. The contact arm includes a common base plate fixed to the terminal base. The contact arm further includes two sets of contact beams arranged in mirror symmetry with each other relative to a longitudinal axis of the common base plate, with each set of contact beams being constructed to extend from a respective side of the common base plate and to bend back.

The embodiment of the present disclosure discloses a common-base radio frequency power amplifier, comprising: an input balun, an output balun, at least one transistor and a feedback circuit. Wherein, the first input end of the input balun receives a first signal; the second input end of the input balun is grounded; the emitter of the transistor is connected to the corresponding output end of the input balun; the collector of the transistor is connected to the corresponding input end of the output balun; the first output end of the output balun outputs a second signal; the second output end of the output balun is grounded; the base of the transistor is connected to the feedback circuit. The input balun, the transistor and the output balun are configured to amplify the first signal into the second signal. The feedback circuit is configured to generate a feedback signal based on the input balun and / or the output balun, and couple the feedback signal to the base of the transistor.

The utility model provides a kind of intermediate frequency amplification circuit board, comprising: intermediate frequency signal input wiring group;Intermediate frequency signal processing loop, it includes first cascade signal amplifier, intermediate frequency broadband selector, intermediate frequency matching filter, logarithmic amplifier and video signal amplifier, using common-emitter amplifying circuit structure and common-base amplifying circuit structure, intermediate frequency signal input wiring group is connected external MCU in turn through first cascade signal amplifier, intermediate frequency broadband selector, intermediate frequency matching filter, logarithmic amplifier and video signal amplifier;Tuning control loop, it includes second cascade signal amplifier, frequency-selective amplifying circuit and detection amplifier, using common-emitter amplifying circuit structure and common-base amplifying circuit structure, intermediate frequency signal input wiring group is connected external MCU in turn through second cascade signal amplifier, frequency-selective amplifying circuit and detection amplifier, tuning control loop is also connected intermediate frequency matching filter through intermediate frequency broadband selector.

The application discloses a kind of bipolar under-voltage lockout protection circuits, including resistance proportional current mirror and starting circuit, resistance proportional current mirror includes LPNP1 tube, LPNP2 tube and LPNP3 tube, LPNP1 tube emitter is connected with power supply Vcc by resistance R1, LPNP2 tube emitter is connected with power supply Vcc by resistance R2;LPNP2 tube and LPNP3 tube common base, LPNP2 tube collector LPNP3 tube emitter connection, LPNP3 collector is connected with ground by resistance R3;LPNP2 tube collector is connected with bias circuit and current source;bias circuit and current source are respectively connected with the collector and base of darlington tube, the emitter of darlington tube is connected with the first end of resistance R9, and the second end of R9 is connected with the collector of NPN19 tube, the base of NPN19 tube is connected with the collector, and the emitter is grounded;With the characteristics of simple process, low power consumption, threshold voltage high precision, high reliability.

The present disclosure describes an RF amplifier implemented in SiGe HBT technology. The RF amplifier has a cascode stage including a common base (CB) transistor and a common emitter (CE) transistor arranged in series between a first voltage rail and a second voltage rail. An RF input is coupled to a base of the CE transistor, and an RF output is coupled to a collector of the CB transistor. The RF amplifier includes a CB power down circuit arranged between a base of the CB transistor and the second voltage rail, and a CE power down circuit arranged between the base of the CE transistor and the second voltage rail. In a power down mode, the CE power down circuit couples the base of the common emitter transistor to the second voltage rail. The CB power down mode circuit couples the base of the CB transistor to the second voltage rail via a high-ohmic path.

The invention discloses a W-band fully differential active phase shifter with high linearity and low temperature fluctuation. The W-band fully differential active phase shifter comprises a spiral differential quadratic coupler, an I-path high-linearity buffer amplifier, a Q-path high-linearity buffer amplifier, an I-path vector modulation circuit, a Q-path vector modulation circuit, a vector synthesis output circuit, a bias current array and a current source in quadratic correlation with temperature, wherein the spiral differential orthogonal coupler adopts two completely symmetrical spiral coupling line structures to reduce the area and generate differential orthogonal signals with high precision and low insertion loss; on the basis that the I-path high-linearity buffer amplifier and the Q-path high-linearity buffer amplifier isolate post-stage impedance fluctuation to the spiral differential quadrature coupler, the linearity of a circuit is improved through a source feedback resistor, and deterioration of the linearity of the whole phase shifter is avoided; the I-path vector modulation circuit and the Q-path vector modulation circuit both adopt a variable gain amplifier structure capable of realizing phase inversion, and have a larger gain control range and better linearity while realizing phase inversion; a common-base triode with a self-biased resistor is used as an output buffer stage to realize a vector synthesis function, and the structure can ensure relatively constant output impedance in different phase shift states so as to realize good output matching in all phase shift states; a current source in secondary correlation with the temperature is used for biasing, and the change of the gain of the whole circuit along with the temperature is compensated so as to reduce the temperature fluctuation.

The invention relates to an assembly comprising a milking device and a measuring device for measuring a mass flow of milked milk. The measuring device has a housing comprising: an inlet which is connected to the milking device; an outlet; and a channel that connects the inlet and the outlet. The channel has, in the direction of the outlet, a first portion, a transition region, and a second portion. The first portion, the transition region and the second portion have a common base which extends uniformly down to the outlet. In the transition region, the flow cross-section of the first portion is reduced towards the second portion. A measuring device comprises a first electrode and a second electrode which are positioned at a distance from one another. At least one of the electrodes is positioned inside the second portion and, with respect to the direction of flow, is positioned downstream of and at a distance from the transition region. A voltage source is connected to two regions of the first electrode that are remote from one another. A detection device is electrically connected to the first electrode and the second electrode.

The application provides a direct current power supply and a circuit thereof for a mass spectrometry instrument, relates to the field of mass spectrometry, and comprises a negative high-voltage generation channel circuit, a positive high-voltage generation channel circuit and a common-mode offset control circuit; wherein the negative high-voltage generation channel circuit comprises a first operational amplifier, a high-voltage NPN transistor, a high-voltage PNP transistor and a PNP common-base amplifier; the positive high-voltage generation channel circuit comprises a second operational amplifier, a high-voltage NPN transistor, a high-voltage PNP transistor and an NPN common-base amplifier; a common-mode voltage signal output by the common-mode offset control circuit is connected to the negative high-voltage generation channel circuit and the positive high-voltage generation channel circuit respectively, and the negative high-voltage generation channel circuit is connected to the positive high-voltage generation channel circuit. A low-voltage precision operational amplifier is adopted, a level shift and a totem-pole output stage composed of discrete components are combined, and through negative feedback control, stable control of a high-voltage, large-dynamic-range direct current output by a low-voltage and high-precision DAC signal is realized.

Described herein is a terminal assembly (1) and an electrical connector (2), the terminal assembly (1) being configured to mate in conductive contact with a conductive member (6), and the terminal assembly (1) comprising a terminal base (11) and a contact arm (12) secured to the terminal base (11), the contact arm (12) comprising: a common base plate (121) secured to the terminal base (11), and two sets of contact beams (122), the contact beams (122) are arranged in mirror symmetry with respect to a longitudinal axis (L) of the common base plate (121), each set of contact beams (122) being configured to extend from a respective side of the common base plate (121) and to be bent back.