123 results about "Hillock" patented technology

An optical device, e.g., LED, laser. The device includes a non-polar gallium nitride substrate member having a slightly off-axis non-polar oriented crystalline surface plane. In a specific embodiment, the slightly off-axis non-polar oriented crystalline surface plane is up to about −0.6 degrees in a c-plane direction, but can be others. In a specific embodiment, the present invention provides a gallium nitride containing epitaxial layer formed overlying the slightly off-axis non-polar oriented crystalline surface plane. In a specific embodiment, the device includes a surface region overlying the gallium nitride epitaxial layer that is substantially free of hillocks.

The invention provides an Al alloy film for use as an electrode of a semiconductor device and also provides an Al alloy sputtering target used to produce such an Al alloy film wherein the Al alloy film has not only a low resistivity equal to or less than 5 mu OMEGA cm and a high hillock resistance (property of hillock suppression) but also a high dielectric strength when it is anodized into an anodic oxide film and wherein the Al alloy film has a composition such that the Ni content is equal to or greater than 0.3 at % and the Y content is equal to or greater than 0.3 at % and such that 0.22 CNi+0.74 CY<1.6 at % where CNi denotes the Ni content (at %) and CY denotes the Y content (at %) and further wherein, in order to deposit the Al alloy film by sputtering, a spray forming Al alloy target containing Ni and Y is used.

A textured article that includes a transparent substrate having at least one primary surface and a glass, glass-ceramic or ceramic composition; a micro-textured surface on the primary surface of the substrate, the micro-textured surface comprising a plurality of hillocks; and a nano-structured surface on the micro-textured surface, the nano-structured surface comprising a plurality of nano-sized protrusions or a multilayer coating comprising a plurality of layers having a nano-scale thickness. Further, the hillocks have an average height of about 10 to about 1000 nm and an average longest lateral cross-sectional dimension of about 1 to about 100 μm, and the nano-sized protrusions have an average height of about 10 to about 500 nm and an average longest lateral cross-sectional dimension of about 10 to about 500 nm. The substrate may be chemically strengthened with a compressive stress greater than about 500 MPa and a compressive depth-of-layer greater than about 15 μm.

A shoe foundation assembly for receiving and retaining a number of cleats or spikes into the bottom sole of the shoe such as might be utilized in various sporting events. The shoe foundation assembly includes a unitarily molded shoe cradle component with a toe guard at a first end, a heel guard at a second end, and arch medial. An outsole is bonded to the midsole component sized and shaped to be positioned on the underside base of the shoe cradle component. The detachable cradle incorporates hillock apertures for positioning a number of sealable inserts to receive the cleat / spikes. Bonded to the midsole is an outsole component having a plurality of slit apertures also positioned to receive the plurality of cleat / spikes. A number of different types of cleats or shoe spikes may be inserted into the apertures in the outsole and through the sealable inserts within the midsole. Each of the cleat / spikes incorporates a structure for the retention of the cleat / spike onto the shoe foundation.

The invention concerns a cathode pulverization target characterized in that its active part, i.e. the volume of the target capable of being removed during the cathode pulverization, consists of a high purity aluminum alloy simultaneously containing copper and iron and having simultaneously a recrystallization temperature well above 20° C. and an electric resistivity less than 2.85 muOMEGA.cm at 20° C. The use of the target for making bonding circuits reduces the frequency at which voids and hillocks appear, while maintaining the resistance of the bonding circuits at values comparable to the resistance obtained with a high purity aluminum alloy, while also providing the etching characteristics comparable to those of high purity aluminum alloy.

The invention relates to a large-range goaf group filling method and belongs to the technical field of mining engineering. According to the technical scheme, the method includes: dividing filling units, selecting filling material, and laying out filling pipes; calculating to determine the thickness of a filling retaining wall, performing site construction, reserving drain holes and filter holes in the filling retaining wall, and stacking a hillock inverted filter layer behind the filling retaining wall; laying filter pipes, allowing the filter pipes to extend out from the drain holes of the filling retaining wall; constructing a filling borehole, 133mm-150mm in diameter, at a highest point, applying the filling borehole as an overhead discharge point, ensuring roof contact, constructing the corresponding number of filling boreholes according to practical situation, and performing alternating filling. The large-range goaf group filling method has the advantages that filling process is simplified, filling efficiency is increased, plugging amount is decreased, filling amount is decreased, filling period is shortened, filling cost is lowered, and normal mine production is guaranteed.

A method for building orchard via building soil at bare purple rock sloping fields comprises the following steps of: (1) selecting purple shale interbedding bare rock or purple shale bare rock gentle sloping fields with gradients of less than 15 degrees at the southeast slope of purple rock hillock to be used as the object for orchard soilbuilding; (2) delimiting explosion lines and shot hole points at the selected soilbuilding sloping fields along the contour line; (3) performing two times of layered directional explosions in spring, and stacking thin layers to form ditches, connecting the ditches with drainage ditches; (4) stirring the gravels in thin piles 1-2 times in high temperature seasons like summer and autumn; (5) backfilling the weathered broken gravels and half-weathered materials and weathered materials in next autumn, and filling organic fertilizers; (6) building horizontal ladder soils at the same height; (7) importing new soil and fertilizing according to standards, and importing fine granular soils; (8) after fruit trees are planted, turning over the surface soil layer; (9) interplanting crops, increasing the soil fertility, wherein watermelon and leguminous crops are planted in the first two years for improving soil fertility; and 1000-1500 kg of livestock and poultry manures are applied in every 667m<2> for interplanting watermelon. By adopting the invention, soils can be built in the bare purple rock sloping fields, and orchard is built; the purpose of recycling and highly-efficient utilization of the lands difficult to use in purple rock areas is realized.

A hillock-free conductive layer comprising at least two aluminum (Al) layers formed on a substrate, wherein said at least two Al layers comprise a barrier Al layer formed on the substrate, and a pure Al layer formed on the barrier Al layer. The barrier Al layer could be an aluminum nitride (AlNx) layer, an aluminum oxide (AlOx) layer, an aluminum oxide-nitride (AlOxNy) layer, or an Al—Nd alloy layer. Also, the pure Al layer is physically thicker than the barrier Al layer, for effectively inhibiting the occurrence of hillocks and the like.

Disclosed is a technique of improving the heat resistance of the aluminum gate electrode in bottom-gate-type TFT of which the active layer is made of a crystalline silicon film. A pattern of a laminate of a titanium film 102 and an aluminum film 103 is formed on a glass substrate 101. The pattern is to give a gate electrode 100. Then, the titanium film 102 is side-etched. Next, the layered substrate is heated to thereby intentionally form hillocks and whiskers-on the surface of the aluminum pattern 103. Next, the aluminum pattern 103 acting as an anode is subjected to anodic oxidation to form an oxide film 105 thereon. The anodic oxidation extends to the lower edge of the aluminum pattern 103, at which the titanium layer was side-etched. Next, a gate-insulating film 106 and an amorphous silicon film are formed. A mask is formed over the pattern, which is to give -the gate electrode, and then a nickel acetate solution is applied to the layered structure. Thus, nickel is kept in contact with the surface of the structure. Next, this is heated to induce crystal growth in the silicon film from the region contacted with nickel to the masked region. In the bottom-gate-type TFT thus produced, the active layer is made of a crystalline silicon film. In this process, since the anodic oxide film is formed as in FIG. 1(C), aluminum does neither melt to flow away nor diffuse away. Thus, the heat resistance of the aluminum electrode formed is improved.

The present invention provides embodiments of methods and devices for the suppression of copper hillocks. Copper hillocks are suppressed by capping the copper layer with a dielectric film before any significant growth of copper hillocks can begin using a ramped temperature dielectric deposition process. Copper hillocks are also suppressed by doping a copper layer with a dopant that will constrain the grain size of the copper during subsequent processing. These methods are applicable to the construction of MIM capacitors and interconnect structures.

A metal interconnection of a semiconductor device, formed using a damascene process, has large grains and yet a smooth surface. First, a barrier layer and a metal layer are sequentially formed in an opening in an interlayer dielectric layer. A CMP process is carried out on the metal layer to form a metal interconnection remaining within the opening. Then, the metal interconnection is treated with plasma. The plasma treatment creates compressive stress in the metal interconnection, which stress produces hillocks at the surface of the metal interconnection. In addition, the plasma treatment process causes grains of the metal to grow, especially when the design rule is small, to thereby decrease the resistivity of the metal interconnection. The hillocks are then removed by a CMP process aimed at polishing the portion of the barrier layer that extends over the upper surface of the interlayer dielectric layer. Finally, a capping insulating layer is formed. The intentional forming of hillocks by the plasma treatment process at weak portions of the metal interconnection and the subsequent removal of the hillocks greatly reduces the possibility of any additional hillocks being produced at the surface of the metal interconnection, especially when the capping layer is formed.

Provided is a nitride semiconductor having a larger low-defective region on a surface thereof, a semiconductor device using the nitride semiconductor, a method of manufacturing a nitride semiconductor capable of easily reducing surface defects in a step of forming a layer through lateral growth, and a method of manufacturing a semiconductor device manufactured by the use of the nitride semiconductor. A seed crystal portion is formed into stripes on a substrate with a buffer layer sandwiched therebetween. Then, a crystal is grown from the seed crystal portion in two steps of growth conditions to form a nitride semiconductor layer. In a first step, a low temperature growth portion having a trapezoidal-shaped cross section in a layer thickness direction is formed at a growth temperature of 1030° C., and in a second step, lateral growth predominantly takes place at a growth temperature of 1070° C. Then, a high temperature growth potion is formed between the low temperature growth portions. Thereby, hillocks and lattice defects can be reduced in a region of the surface of the nitride semiconductor layer above the low temperature growth portion.

A method of fabricating a copper interconnect on a substrate is disclosed in which the interconnect and substrate are subjected to a low temperature anneal subsequent to polarization of the interconnect and prior to deposition of an overlying dielectric layer. The low temperature anneal inhibits the formation of hillocks in the copper material during subsequent high temperature deposition of the dielectric layer. Hillocks can protrude through passivation layer, thus causing shorts within the connections of the semiconductor devices formed on the substrate. In one example, the interconnect and substrate are annealed at a temperature of about 200 ° C. for a period of about 180 seconds in a forming gas environment comprising hydrogen (5 parts per hundred) and nitrogen (95 parts per hundred).

The invention discloses an energy-saving in-situ thermal desorption treatment device and an energy-saving in-situ thermal desorption treatment method for greasy dirty contaminated soil. The energy-saving in-situ thermal desorption treatment device comprises a heating assembly, an extraction assembly, a smoke emission assembly, an inert gas blowing-in assembly, a monitoring assembly and a contaminated gas treatment assembly; the heating assembly comprises heating pipes; the heating pipes are arranged in the greasy dirty contaminated soil; the extraction assembly comprises extraction tubes; theextraction tubes are arranged in the greasy dirty contaminated soil; the flue gas emission assembly comprises smoke return pipes; the smoke return pipes communicate with the heating pipes; the monitoring assembly is arranged in the greasy dirty contaminated soil; and the contaminated gas treatment assembly communicates with the extraction assembly. The energy-saving in-situ thermal desorption treatment method comprises the steps that a greasy dirty contaminated soil hillock is established in a different place on the spot; in the process of establishing the greasy dirty contaminated soil hillock, the energy-saving in-situ thermal desorption treatment device for the greasy dirty contaminated soil disclosed by the invention is arranged; a thermal insulation layer and a sealing layer are sequentially arranged outside the established hillock; and the hillock is heated, and volatile components of greasy dirt in the soil after being heated enter the contaminated gas treatment assembly via theextraction assembly, so that greasy dirt recovery is achieved.

A method of depositing a (200)-oriented platinum thin film on a substrate, including the steps of forming a oxygen containing platinum layer on the surface of a silicon wafer heated to a temperature range over room temperature and not exceeding 700° C. under a mixed gaseous atmosphere of oxygen and inert gas and annealing the substrate at a temperature between 400° C. and 1000° C. The platinum thin film formed according to the present invention in (200)-oriented and does not have any conventional defects such as hillocks or voids.

The invention provides a film transistor array substrate and a manufacturing method thereof. The film transistor array substrate comprises a substrate, as well as a first metal layer, an insulating layer, a semiconductor layer, a second layer, a passivation layer and a transparent electrode layer which are formed on the substrate in turn, wherein the first metal layer at least comprises three layers of aluminum films, the second metal layer also consists of three aluminum films, and the three aluminum films have different film quality densities and are formed under different coating film parameters. Therefore, the film transistor array substrate provided with the at least three aluminum films not only has the characteristic of low resistivity, but also can prevent aluminum metal from generating hillock growth in the high-temperature film coating process.

A film forming apparatus for forming a film according to an AD method in which separation of the film or generation of hillocks is suppressed when the film formed on a substrate is heat-treated. The apparatus includes: an aerosol generating unit (1-4) for dispersing raw material powder (20) with a gas, thereby aerosolizing the raw material powder (20); a processing unit (6) for processing the raw material powder (20) aerosolized by the aerosol generating unit (1-4) to reduce an amount of impurity, which generates a gas by being heated, adhering to or contained in the raw material powder (20); and an injection nozzle (9) for spraying the aerosolized raw material powder (20) processed by the processing unit (6) toward a substrate (30) to deposit the raw material powder (20) on the substrate (30).

The invention relates to a quick construction method of a hillock surface temperature field with space reference, which includes control point distribution, control point coordinate measurement, hillock surface temperature collection, temperature image integral splicing and coordinate conversion. The quick construction method of the temperature field is novel and practical, high in reliability, especially suitable for multi-stage monitoring of surface temperature of the hillock and capable of providing accurate temperature distribution data for early warning and treatment of hillock disaster.

A hillock-free gate layer and method of manufacturing the same is disclosed. One or more pure aluminum layers are formed under high pressure and low sputtering power. An aluminum layer containing nitrogen is then formed on the pure aluminum layers to prevent the formation of hillocks and to reduce manufacturing costs.

An active matrix addressing LCD device having an active matrix substrate on which conductive lines are formed is provided, which suppress the AI hillock without complicating the structure of the lines and which decreases the electrical connection resistance increase at the terminals of the lines, thereby improving the connection reliability. The device comprises an active matrix substrate having a transparent, dielectric plate, thin-film transistors (TFTs) arranged on the plate, and pixel electrodes arranged on the plate. Gate electrodes of the TFTs and scan lines have a first multilevel conductive structure. Common electrodes and common lines may have the first multilevel conductive structure. Source and drain electrodes of the TFTs and signal lines may have a second multilevel conductive structures. Each of the first and second multilevel conductive structures includes a three-level TiN / Ti / Al or TiN / Al / Ti structure or a four-level TiN / Ti / AI / Ti structure. Each of the TiN film of the first and second structures has a nitrogen concentration of 25 atomic % or higher. The Al file may be replaced with an Al alloy.

A method of forming metal thin film of a memory device includes the steps of forming a metal layer on a semiconductor substrate, forming uniform grains on a surface of the metal layer, and forming a dielectric layer on the metal layer.

The invention provides a toy gyro good in defensiveness. The toy gyro comprises a spiral cover, a spiral sheet, a spiral base and a hillock point, and is characterized by further comprising an elastic shock absorption piece for buffering impact force when the gyro is impacted. The shock absorption piece is provided with an elastic part used for resisting impact and a connection part fixedly connected with the spiral base. The elastic part is located on the periphery of the spiral base through fixed connection of the connection part and the spiral base, and therefore when the gyro competes with other gyros and the other party impacts on the elastic part, impact force will be reduced due to elastic deformation of the elastic part; thus, the shock absorption effect is achieved to make the gyro rotate stably, anti-impact force is produced and returned to the other party at the same time to interfere the other party, and accordingly the win rate of the gyro is improved. The toy gyro is strong in interestingness, the elastic property of the elastic shock absorption piece can be changed by a player according to judgments so as to achieve a better anti-impact effect, the method to play the toy gyro is novel, the toy gyro can attract more players, and manipulative ability and competitive ability of children can be trained at the same time.

The present invention is directed to a wiring layer which has high thermal stability and a better stress migration resistance characteristic as an electrode wiring material that is used in a liquid crystal display and where there is no defect such as a hillock and the like and the electric resistance is considerably low. More specifically, the present invention is directed to a wiring layer which comprises at least two layers formed on a substrate. The two layers include: a first layer which has substantially aluminum for its main component and a second layer formed on the first layer which has substantially the same component as the first layer. Also, the second layer is higher in electric resistance than the first layer and has an amorphous phase for its main phase. The second layer may also include microcrystals which have a crystal particle diameter D2 smaller than a crystal particle diameter D1 of the first layer.

The method comprises the following steps of (1) cultivated land selection including selecting a medicinal material slope between young tea-oil trees on a four-period red-earth hillock area for an interval deep scarification intertillage target, (2) ditch digging, fertilizer application and land preparation including digging ditches along contour lines, applying base fertilizer in the ditches and covering soil and form equal-high trenches, (3) medicinal material seedling transplantation and fixed plantation or root stock fixed plantation, (4) deep scarification intertillage including conducting deep scarification intertillage before ridge-close in the summer, and (5) grass belt or grass fence construction, including building equal-high grass belts or grass fences with an interval of 9 to 11m on a slope from slope top to the slope root of the young tea-oil tree forest slope. Soil moisture content can be improved; soil ventilation and nutrient effectiveness can be promoted after rain and soil organic matter humification can be promoted; compared with the present common intertillage, the method can improve stratum moisture content, reduce soil volume weight, increase stratum nutrient content increase and promote young tea-oil tree growth as well as increasing medicinal material output.

The invention relates to an earth borrowing method in the process of highway construction. The earth borrowing method in the process of highway construction is used for solving the problems that due to the fact that the amount of earth needed by construction is large, in the process of land acquisition and earth utilization, earth utilization is difficult, land wastage is caused, the environment is damaged, and tall hillocks, slope wasteland and dunes are low-yield land. The earth borrowing method in the process of highway construction comprises the steps that (1) the site of a borrow area is selected; (2) topsoil stripping is carried out on the borrow area and a designed highway; (3) backfill is carried out on the borrow area after topsoil is stripped, and the designed highway after topsoil is stripped; (4) direct seeding planting is carried out on the borrow area after backfill is carried out. The earth borrowing method in the process of highway construction is applied to the field of earth borrowing methods in the process of highway construction.

A method of reducing copper hillocks in copper metallization is described. An opening is made through a dielectric layer overlying a substrate on a wafer. A copper layer is formed overlying the dielectric layer and completely filling the opening. The copper layer is polished back to leave the copper layer only within the opening. Copper hillocks are reduced by applying F ions to the copper layer to form a buffer zone on a surface of the copper layer and in-situ depositing a capping layer overlying the copper layer. The F ions remove copper oxide naturally formed on the copper surface and the buffer zone transfers thermal vertical strain in the copper to horizontal strain thereby preventing formation of copper hillocks.