Film transistor array substrate and manufacturing method thereof

Abstract

The invention provides a film transistor array substrate and a manufacturing method thereof. The film transistor array substrate comprises a substrate, as well as a first metal layer, an insulating layer, a semiconductor layer, a second layer, a passivation layer and a transparent electrode layer which are formed on the substrate in turn, wherein the first metal layer at least comprises three layers of aluminum films, the second metal layer also consists of three aluminum films, and the three aluminum films have different film quality densities and are formed under different coating film parameters. Therefore, the film transistor array substrate provided with the at least three aluminum films not only has the characteristic of low resistivity, but also can prevent aluminum metal from generating hillock growth in the high-temperature film coating process.

Description

technical field [0001] The invention relates to a liquid crystal display thin film transistor array substrate and a manufacturing method of the array substrate; in particular, it relates to a method for forming a metal layer of the thin film transistor array substrate. Background technique [0002] At present, the use of liquid crystal displays (LCDs) has become a trend. LCDs have superior characteristics such as high image quality, better space utilization, low power consumption, and no radiation. With the increasingly mature technology of LCDs, LCDs Widely used in various fields. Generally speaking, a liquid crystal display is composed of a thin film transistor array substrate, a color filter substrate and a liquid crystal layer sandwiched between the two substrates. Wherein, the thin film transistor array substrate mainly includes a substrate and pixel structures arranged on the substrate in an array. The aforementioned pixel structure is mainly composed of scan lines, ...

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Problems solved by technology

[0004] In the above-mentioned pixel structure, the gate has a double-layer structure of molybdenum (Mo) metal layer and aluminum neodymium (AlNd) layer, although aluminum neodymium (AlNd) has better temperature stability than aluminum (Al) metal, It can prevent the problem of hillock growth caused by excessive extrusion stress between aluminum atomic grains during high temperature film formation, but aluminum neodymium (AlNd) has a higher resistivity than aluminum (Al) metal Shortcomings

[0005] Considering the increasing trend of LCD size, however, the length of scan lines and data lines will increase with the increase of LCD size, so that the increasing scan lines and data lines will increase the resistance value with the length, thus generating signal delay ( RC Delay), so a material with low resistivity is needed to solve the above problems

[0006] Although aluminum (Al) metal has the advantages of low resistivity and low price compared to aluminum neodymium (AlNd); The problem of hillock growth, which in turn easily induces short circuits between the gate, source, and drain of thin film transistors

[0007] In view of the above problems, the industry currently hopes to obtain a method for manufacturing a thin film transistor array substrate, which can not only apply low resistivity materials in the prior art, but also overcome the problems caused by such materials when forming films at high temperatures. hillock problem

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