A toggle MTJ
cell is disclosed that has a nearly balanced SAF free layer with two major sub-
layers separated by an anti-parallel
coupling layer. Within each major sub-layer, there is a plurality of minor sub-
layers wherein adjacent minor sub-
layers are separated by a parallel
coupling layer. The parallel
coupling layer is a non-
magnetic layer that may be a one or more of Ta, Cu, Cr, Ru, Os, Re, Rh, Nb, Mo, W, Ir, and V, a
metal oxide, or dusting of NiCr, Ta, Cu, or NiFeCr. Magnetic moments of major sub-layers are made to be nearly equal so that the net moment of the SAF free layer is essentially zero. The MTJ
cell and SAF free layer preferably have an
aspect ratio of from 1 to 5. Ferromagnetic coupling between minor sub-layers enables a lower
write current and lower
power consumption than conventional toggle
cell designs.