The invention discloses an improved structure of a gate drive circuit, which comprises an input stage circuit, two groups of SR latches, a level migration circuit, a
delay matching module, a buffer and a narrow
pulse generator, the level migration circuit is composed of two parts of a main body circuit and a
control circuit, the two groups of SR latches are used for generating non-overlapping signals, and the
delay matching module is used for outputting the non-overlapping signals. The
voltage is fed back to the grid
electrode of the power tube by the level migration circuit, so that the high side is switched off before the low side is switched on, and the low side is also switched off before the high side is switched on to form sufficient
dead time; a high-side PMOS (P-channel
Metal Oxide Semiconductor) framework is matched with two groups of latches to guarantee
dead time to improve the robustness of the
driving circuit, so that the safety and the reliability of the circuit are improved, a
skew latch is arranged on the high side, logic errors caused by dV / dt
noise are fundamentally avoided, a
capacitance coupling structure is added in the
level shifting circuit to feed back
voltage, and the circuit is simple in structure and convenient to operate. And the circuit enters a normal working state.