Efficient method and computer program for modeling and improving static memory performance across process variations and environmental conditions
Patent Information
- Authority / Receiving Office
- US · United States
- Patent Type
- Applications(United States)
- Current Assignee / Owner
- GLOBALFOUNDRIES INC
- Publication Date
- 2006-09-14
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
BACKGROUND OF THE INVENTION
[0001] 1. Technical Field
[0002] The present invention relates generally to memory circuit design methodologies and programs for designing digital memory circuits, and more particularly to a method and computer program for improving static memory performance across process variations and environmental conditions.
[0003] 2. Description of the Related Art
[0004] Memory speed and other performance factors are critical limitations in today's processing systems and are predicted to become even more of a critical limitation as technologies move forward. In particular, static random access memories (SRAMS) and memory cells are used in processor caches, registers and in some designs external to the system processors for fast access to data and program instructions.
[0005] With processor cycle frequencies reaching well above 4 Ghz, development of SRAM cells that can store and provide access to stored values within that period has become necessary. However, at proc...