Method of manufacturing composite structure, impurity removal processing apparatus, film forming apparatus, composite structure and raw material powder

Abstract

A film forming apparatus for forming a film according to an AD method in which separation of the film or generation of hillocks is suppressed when the film formed on a substrate is heat-treated. The apparatus includes: an aerosol generating unit (1-4) for dispersing raw material powder (20) with a gas, thereby aerosolizing the raw material powder (20); a processing unit (6) for processing the raw material powder (20) aerosolized by the aerosol generating unit (1-4) to reduce an amount of impurity, which generates a gas by being heated, adhering to or contained in the raw material powder (20); and an injection nozzle (9) for spraying the aerosolized raw material powder (20) processed by the processing unit (6) toward a substrate (30) to deposit the raw material powder (20) on the substrate (30).

Description

TECHNICAL FIELD[0001]The present invention relates to a method of manufacturing a composite structure by using an aerosol deposition method of depositing raw material powder on a substrate by injecting the raw material powder toward the substrate, and an impurity removal processing apparatus and a film forming apparatus to be used in the method of manufacturing a composite structure. Further, the present invention relates to a composite structure manufactured by using the method of manufacturing a composite structure, and raw material powder to be used in the method of manufacturing a composite structure.BACKGROUND ART[0002]Recent years, in the field of micro electrical mechanical system (MEMS), the manufacture of devices containing functional materials such as electronic ceramics, which express predetermined functions by being applied with voltages, like dielectric materials, piezoelectric materials, magnetic materials, pyroelectric materials, and semiconductor materials by using f...

AI Technical Summary

Benefits of technology

[0018]According to the present invention, a film is formed according to the AD method by using raw material powder containing an amount of impurity, which generates a gas by being heated, less than a predetermined value, and therefore, an amount of the gas generating from inside of the film when heated can be reduced. Accordingly, separation of the film or generation of hillocks can be suppressed at the time of heat treatment of the film. Therefore, dense and high-quality films can be manufactured with high yield.

Problems solved by technology

By the way, when a piezoelectric material such as PZT (lead zirconium titanate) is fabricated by using the AD method, it is necessary to heat-treat (post-anneal) the piezoelectric material after film formation because the piezoelectric material does not exhibit a sufficient electric property as it is.

Although the post-anneal is essential for improving the electric property of the piezoelectric material, when such a phenomenon occurs, it becomes impossible to use the formed film as the piezoelectric material.

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