23 results about "Magnetoresistive random-access memory" patented technology

Magnetoresistive random-access memory (MRAM) is a type of non-volatile random-access memory which stores data in magnetic domains. Developed in the mid-1980s, proponents have argued that magnetoresistive RAM will eventually surpass competing technologies to become a dominant or even universal memory. Presently, other memory technologies such as flash RAM and DRAM have practical advantages that have so far kept MRAM in a niche role in the market. It is currently in production by Everspin Technologies, and other companies, including GlobalFoundries and Samsung, have announced in 2016 product plans. A recent, comprehensive review article on magnetoresistance and magnetic random access memories is available as an open access paper in Materials Today.