30 results about "Spin Hall effect" patented technology

The invention provides a microwave phase measurement system based on magneton-photon coupling characteristics. According to the system, an integrated electrode support / GGG / YIG / Pt multilayer structure is embedded in a microwave cavity, and magnetons carry microwave phase information through coupling of the magnetons and photons in the YIG. Magneton precession of the YIG layer causes spin current to be generated in the Pt layer, the spin current is converted into measurable voltage signals through inverse spin Hall effect, and high-resolution phase measurement is realized by means of frequency mixing, coherent detection and the like. The method is high in anti-interference capability, can realize high-sensitivity and low-cost microwave phase measurement, and is expected to be used in the fields of spintronics, microwave measurement, quantum information reading and the like.

Disclosed are a spin-orbit torque magnetic tunnel junction and a majority gate spin logic device and a cascade thereof, in the magnetic tunnel junction, comprising, from top to bottom, an electrode layer, an artificial antiferromagnetic reference layer, an insulating tunneling layer, a magnetized free layer, and an abnormal spin-orbit torque layer, wherein the artificial antiferromagnetic reference layer comprises, from top to bottom, a first ferromagnetic layer, a non-magnetic spacer layer, and a second ferromagnetic layer, the first ferromagnetic layer has a fixed direction of perpendicular magnetization; the electrode layer in contact with the first ferromagnetic layer has an in-plane polarization to adjust the magnetization direction of the second ferromagnetic layer, the magnetic free layer has a variable direction of perpendicular magnetization; the abnormal spin-orbit torque layer in contact with the magnetic free layer has an in-plane magnetization direction to generate an abnormal spin Hall effect to make the magnetic free layer magnetization flip, thereby changing the spin-orbit torque magnetic tunnel junction resistance state and realizing a logic function.

The present invention relates to probabilistically controllable random number generators. According to one embodiment, a random number generator includes a spin current generating layer formed of a spin Hall effect conductive material and a spintronic device disposed thereon. The spintronic device includes a free magnetic layer disposed on the spin current generating layer, a non-magnetic intermediate layer disposed on the free magnetic layer, and a reference magnetic layer disposed on the non-magnetic intermediate layer. The spin current generating layer is configured to receive a first in-plane current in a first direction to rotate a magnetic moment of the free magnetic layer from an easy axis direction to a hard axis direction, and upon cessation of the first in-plane current, the magnetic moment of the free magnetic layer is randomly rotated from the hard axis direction back to either a positive direction or a negative direction of the easy axis. A magnetic moment of the reference magnetic layer is fixed in either the positive direction or the negative direction of the easy axis. The spintronic device is configured to receive a perpendicular current to read a resistance state of the spintronic device.

The application provides a visible band photonic spin Hall device based on a plasmonic metasurface, which comprises: an anisotropic metasurface, which is designed based on a PB geometric phase principle and is formed by periodic arrangement of supercells; the supercells are arranged by homochiral superatoms every interval p and rotation angle by turns, so that the last superatom of each supercell rotates 180 DEG relative to the first superatom; the superatom is a half-wave plate working in a wide frequency visible light band, that is, when left-handed or right-handed circularly polarized light is incident on the superatom, the reflected light is converted into right-handed or left-handed circularly polarized light; under parallel circularly polarized light incidence, the reflected circularly polarized light of the metasurface device follows the generalized Snell law, and left-handed light and right-handed light are reflected towards opposite directions respectively, that is, a photonic spin Hall effect is generated.

The invention relates to a magnetoresistive memory cell comprising: a pillar (MTJ) forming a magnetic tunnel junction (MTJ) and a write track (SOT) made of a spin Hall effect material or an orbital Hall effect material; a support layer (14) made of a material having a configurable metal-insulator transition; a first electrode (EL1) disposed on the support layer (14); the portion (143) of the support layer (14) confined between the first electrode (EL1) and the write track (SOT) forming a first selector (S1); a second electrode (EL2) disposed on the support layer (14); the portion (144) of the support layer (14) confined between the second electrode (EL2) and the write track (SOT) forming a second selector (S2). Figure for the abstract: Fig. 1a

A magnetic memory device is provided. The magnetic memory device includes a spin orbit layer including a non-magnetic element exhibiting a spin Hall effect, a magnetic tunnel junction layer including a free layer, a tunnel barrier layer, and a pinned layer sequentially stacked on a first surface, the magnetic tunnel junction layer having perpendicular magnetic anisotropy (PMA), and a lower magnetic layer on the second surface, the lower magnetic layer having in-plane magnetic anisotropy (IMA), wherein the free layer includes a first sub-free layer and a second sub-free layer each including a magnetic element, and wherein a first concentration of the magnetic element in the first sub-free layer and a second concentration of the magnetic element in the second sub-free layer are different from each other.

The present invention relates to artificial antiferromagnetic multilayer film structures and magnetic random access memories including the same. According to an embodiment, an artificial antiferromagnetic multilayer film structure can include: an in-plane field coupling layer including a first ferromagnetic layer and a second ferromagnetic layer formed of a ferromagnetic conductive material, and a first spacer layer located between the first and second ferromagnetic layers, the first spacer layer being formed of a non-magnetic conductive material and inducing antiferromagnetic coupling between the first and second ferromagnetic layers; a free magnetic layer including a third ferromagnetic layer and a fourth ferromagnetic layer formed of a ferromagnetic conductive material, and a spin Hall effect layer located between the third and fourth ferromagnetic layers, the spin Hall effect layer being formed of a material having a spin Hall effect and inducing antiferromagnetic coupling between the third and fourth ferromagnetic layers; and an intermediate layer located between the in-plane field coupling layer and the free magnetic layer, the intermediate layer being formed of a non-magnetic material.

A memory circuit includes a read circuit and a memory array (M1, M2) including at least one magnetoresistive memory cell, the memory cell including: a pillar; a write track made of a material exhibiting the spin Hall effect or a material exhibiting the orbital Hall effect; a first selector and a second selector, each selector being configured to switch from an off state to an on state when the amplitude of the voltage across the terminals of the selector is higher than a predetermined threshold voltage Vth; the read circuit including: a current source configured to inject a read current (Iread) through the first selector; a detect circuit configured to detect when the second selector switches from an off state to an on state in response to injection of the read current (Iread) by detecting the resistive state of the magnetic tunnel junction.

A magnetoresistive memory cell includes a pillar forming a magnetic tunnel junction and a write track made of a spin Hall effect material or an orbital Hall effect material; a support layer made of a material with a configurable metal-insulator transition; a first electrode arranged on the support layer; the part of the support layer confined between the first electrode and the write track forming a first selector; a second electrode arranged on the support layer; the part of the support layer confined between the second electrode and the write track forming a second selector.

The invention relates to the field of structured light field regulation and control and anisotropic medium light propagation, and discloses a method for regulating and controlling a spin Hall effect of a circular Airy beam by using uniaxial crystal and angular modulation. The method comprises the following steps: constructing a circular Airy beam with a self-focusing characteristic; angular phase modulation is applied to the system, so that the circular symmetry of the system is broken; the modulated light beam enters a uniaxial crystal to be propagated, and due to spin-orbit coupling in the crystal, a spin Hall effect is generated: a left-handed circular polarization component and a right-handed circular polarization component are gradually separated from each other and move along the positive axis and the negative axis respectively; after a light beam is emitted out of the uniaxial crystal, two focuses which are spatially separated and opposite in spinning direction are formed on a self-focusing focal plane. The device and the method can be used for structured light beam regulation and control, spin-orbit coupling and polarized light field modulation research.

The present disclosure generally relates to temperature detection devices including a ferromagnetic (FM) material disposed at a media facing surface (MFS). The FM material is configured to produce a first electric voltage signal in response to a temperature gradient due to an anomalous Nernst effect. The temperature detection device may also include a spin-orbit torque (SOT) material abutting the FM material. The SOT material includes at least one of BiSb, a topological insulator, a topological half-Heusler alloy, or a weakly oxidized heavy metal. The SOT material is recessed from the MFS, wherein the SOT material is configured to receive a spin current parallel to the temperature gradient generated by a spin Seebeck effect in the FM material. The spin current is detectable as a second electric voltage signal via an inverse spin Hall effect. The first electric voltage signal is added to the second electric voltage signal.

The present disclosure provides a spin-orbit torque superlattice material, comprising a plurality of superlattice units sequentially stacked to form a multi-period superlattice structure, each of the superlattice units comprising: a spin Hall layer having a spin Hall effect for converting an electric charge flow into a high-density spin flow; a magnetic layer located above the spin Hall layer and flipping a magnetization direction under the action of the spin flow; and a symmetry-breaking layer located above the magnetic layer for breaking spatial inversion symmetry and enhancing magnetic anisotropy of the magnetic layer; the symmetry-breaking layer is an insulating film or a conductive film having a spin Hall angle opposite to that of the spin Hall layer. The present disclosure also provides a magnetic racetrack device and a magnetic tunnel junction device based on the spin-orbit torque superlattice material.

The invention relates to a current-driven vertical magnetization heterojunction and a magnetic tunnel junction and a preparation method thereof. A vertically magnetized heterojunction structure may include: a spin Hall effect layer including a heavy metal material having a spin Hall effect; a ferromagnetic layer formed on the spin Hall effect layer, including an alloy of a ferromagnetic metal and a rare earth metal, where the spin Hall effect layer is configured to receive a flipping current in a first in-plane direction, the ferromagnetic layer having inclined magnetic anisotropy, the oblique magnetic anisotropy includes a perpendicular magnetic anisotropy component and an in-plane magnetic anisotropy component along a second in-plane direction, the second in-plane direction being perpendicular to the first in-plane direction.

The invention belongs to the technical field of antennas, and relates to a frequency-adjustable and beam-reconfigurable spin electron antenna, which comprises a waveguide layer, a magnetic material layer and a waveguide feed port, the waveguide layer comprises a dielectric plate, a floor and two waveguides; the two waveguides are arranged at an interval and are connected with the floor; the magnetic material layer is arranged on the upper surface of the waveguide layer, and two sides of the magnetic material layer are respectively connected with one corresponding end of the two waveguides; the two waveguide feed ports are respectively arranged at two sides of the waveguide layer, an included angle between the two waveguide feed ports and the waveguide layer is not zero, and the two waveguide feed ports are respectively connected with the other corresponding ends of the two waveguides; a bias static magnetic field is applied to the spin electron antenna, so that the magnetic material layer generates an inverse spin Hall effect, and an electric signal is transmitted between the two waveguides or radiated to the space; and changing the direction and the size of the bias static magnetic field to regulate and control the working frequency and the beam deflection angle of the antenna. According to the invention, frequency regulation and control and wave beam reconfiguration can be realized.

The application provides a photonic spin Hall effect regulation method based on a polar medium core-shell structure, comprising the following steps: constructing a nanoparticle model based on core parameters of a spherical core-shell structure of a silicon dielectric core-silicon carbide polar medium shell; constructing an optical scattering transfer function based on the core parameters and the Mie theory; calculating photonic spin Hall displacement amplitudes of a short-wave side region and a long-wave side region of a full anti-band of a silicon carbide material in a mid-infrared region based on the optical scattering transfer function; regulating the photonic spin Hall displacement amplitudes and the center positions of the short-wave side region and the long-wave side region by adjusting a core-shell ratio; and converting the spherical core-shell structure into an ellipsoidal core-shell structure by adjusting the morphology of the core-shell structure, so as to enhance the photonic spin Hall displacement amplitude and the scattering intensity of the short-wave side region. The application can solve the problems that the photonic spin Hall displacement is difficult to appear in the mid-infrared waveband, the scattering intensity is low, the adjustability is poor, and the application is difficult to be large-scale.

Devices that sense and manipulate magnetic fields based on spin current interactions independent of the spin Hall effect (SHE) in heavy metals. Spin current is generated in ordinary metals through a conversion of out-of-plane orbital current induced by the orbital Hall effect (OHE). The conversion from orbital current to spin current occurs in thin heavy metal layers (a few atomic layers thick), thus greatly reducing the need for heavy metals by replacing them with ordinary metals. Device applications include magnetoresistive sensors for detecting and measuring magnetic fields, and magnetic tunnel junction data storage cells.

The invention provides a photon spin Hall effect device and application thereof. The photon spin Hall effect device comprises a first photonic crystal, a defect layer and a second photonic crystal which are stacked in sequence, the first photonic crystal and the second photonic crystal are both formed by alternately stacking Si and SiO, the first photonic crystal and the second photonic crystal are the same in periodicity, unequal in thickness and opposite in arrangement direction, and SiO layers are arranged on the outermost sides of the first photonic crystal and the second photonic crystal; the defect layer comprises a graphene layer and a SiOO layer. According to the photon spin Hall effect device, on the premise that the physical structure is kept unchanged, dynamic high-sensitivity regulation and control of photon spin displacement can be achieved through external pressure, and the limitation of static structure parameters in a traditional method is overcome; and on the basis of the characteristic that the spin displacement is regulated and controlled through pressure, the method can be applied to various applications such as pressure sensing, tunable photonic devices and optical switches, and has extremely high application prospects.

The application provides a magnetic superconducting memory and a preparation method and a read-write method thereof.The magnetic superconducting memory of the application uses the resistance difference between superconducting states and normal states to map the magnetization state; the ferromagnetic layer is used as an adjustable free layer, and the magnetization direction of the ferromagnetic layer affects the size of the superconducting critical current of the superconducting layer; the heavy metal layer generates a spin-orbit torque through the spin Hall effect to drive the magnetization of the ferromagnetic layer to flip; the application realizes an infinite on-off ratio between superconducting states and normal states through the superconducting diode magnetoresistance effect, and realizes a high-efficiency and high-reliability nonvolatile storage scheme by combining the current-driven spin-orbit torque magnetization flipping technology, which completely overcomes the inherent defects of the traditional TMR and significantly improves the signal contrast of the storage unit; the heterostructure designed in the application replaces the traditional magnetic tunnel junction, reduces the material stacking and process complexity, and uses materials compatible with the CMOS process to promote the large-scale integration of low-temperature memories.

The invention discloses an asymmetric spin injection vertical cavity surface emitter and a preparation method thereof, and belongs to the technical field of semiconductor lasers, the emitter comprises a GaAs substrate, a GaNnAs spin enhancement layer, a GaAs transition layer and an asymmetric heterogeneous barrier structure, the GaNnAs spin enhancement layer and the GaAs transition layer are sequentially grown on the substrate, the asymmetric heterogeneous barrier structure is prepared on the surface of the transition layer, the asymmetric heterogeneous barrier structure is composed of an Al2O3 insulating layer and an MgO tunneling layer, wherein the Al2O3 insulating layer is used for blocking electrons from passing through, and the MgO tunneling layer is used for allowing electrons in a specific spinning direction to pass through in a tunneling manner. A Pt spin Hall effect generation layer is deposited on the heterogeneous barrier structure, a transverse strip-shaped electrode is formed, and a lower DBR reflector, an active layer, an oxidation limiting layer and an upper DBR reflector are sequentially grown above the transverse strip-shaped electrode. According to the invention, by introducing the quantum Hall effect and the heterogeneous barrier structure of the non-magnetic material, direct electric control of the polarization state of the VCSEL is realized, the spin injection efficiency and the polarization control capability are improved, and the compatibility with the existing VCSEL process is maintained at the same time.

The present disclosure generally relates to a magnetic sensor half-bridge circuit. The half-bridge circuit includes a bias source connected to a first leg and a second leg. The first branch includes one or more first spin orbit moment (SOT) structures connected in series, each first SOT structure including a first ferromagnetic (FM) layer disposed on the first SOT layer. The first SOT layer has a first end connected to the ground and a second end connected to the first voltage sensor. The second branch includes one or more second SOT structures connected in series, each second SOT structure including a second FM layer disposed on a second SOT layer. The second SOT layer has a first end connected to the second voltage sensor and a second end connected to the ground. The first voltage sensor and the second voltage sensor are disposed adjacent to each other.

This invention provides a metasurface-based vortex light generation and spin Hall device, comprising an anisotropic surface plasmon metasurface. The core innovation of this invention lies in fusing two different optical functions into a single metasurface device through phase superposition, enabling the device to operate in a wide visible light band and exhibiting robustness to incident light angles. The optical functions include: converting incident plane waves into vortex beams and the spin Hall effect of the vortex beams; the metasurface is arranged with anisotropic identical superatoms according to a specific coded phase distribution; the coded phase distribution is obtained by superimposing a coded helical gradient phase distribution and a coded linear gradient phase distribution; the superatoms are designed as half-wave plates operating in a wide visible light band.

The application discloses a high-quality-factor photonic spin Hall effect regulation method, comprising the following steps: S1, providing a metasurface for realizing PSHE enhancement, providing a structural basis and a physical platform for the whole regulation method, and being a prerequisite for realizing high-Q-factor PSHE; S2, exciting an optical field on the metasurface and utilizing the topological protection BIC existing at the Brillouin zone Gamma point of the metasurface, forming quasi-BIC resonance after introducing symmetry breaking, converting ideal BIC into a couplable resonance state, and providing a physical mechanism for PSHE enhancement; S3, under the resonance state excited in S2, realizing quantitative prediction and active regulation of PSHE displacement through theoretical modeling and numerical analysis, and verifying through experimental means. According to the application, by regulating an incident light wave vector, PSHE can be significantly enhanced with a Q factor of more than 1000 near the quasi-BIC resonance.

A nano oscillator based on reciprocating motion of a magnetic domain wall is integrally of a cylindrical disc laminated structure and comprises a first heavy metal layer, a first magnetic layer, a second heavy metal layer, an insulating layer, a third heavy metal layer, a second magnetic layer and a fourth heavy metal layer which are sequentially laminated in the axial direction. The first heavy metal layer and the second heavy metal layer transmit in-plane direct current and generate polarization current through a spin Hall effect; the magnetic domain wall of the first magnetic layer reciprocates from one end of the disc to the other end under the driving of polarization current; and the second magnetic layer reciprocates along with the magnetic domain wall of the first magnetic layer through dipole interaction. The magnetic domain wall can be spontaneously formed, reciprocating motion close to a full disc is achieved, the disc magnetization intensity z component oscillation amplitude is improved, the local interface DMI and dipole coupling is combined, the zero external magnetic field work is supported, the critical current is low, high performance, low power consumption and process simplicity are considered, and a better scheme is provided for the spinning nanometer oscillator.

The invention provides an oscillator, an audio recognition system and a high-performance microwave source system, and relates to the field of spintronics devices, and the oscillator comprises a substrate, a spin source layer, an oscillation layer, a third electrode, a fourth electrode and a fifth electrode. Wherein the material of the substrate comprises a piezoelectric material, the first electrode and the second electrode are used for applying a voltage to the substrate, the spin source layer is arranged on the substrate and is used for converting a charge flow into a spin flow based on a spin Hall effect, and the material of the oscillation layer comprises a staggered magnet material. According to the oscillator, non-uniform in-plane strain is generated under a transverse electric field through the substrate and is transmitted to the oscillation layer to destroy crystal symmetry, and the direction of a neel vector is regulated and controlled. Based on the spin Hall effect of the spin source layer, a charge flow is converted into a spin flow, a Nell vector is driven to continuously precession, stable terahertz oscillation is excited, the strain state can be changed by adjusting an electric field, the frequency and amplitude of an oscillation signal can be dynamically modulated, and efficient regulation and control are achieved.

The application discloses a method for regulating a photonic spin Hall effect by using bias auxiliary light, and relates to the field of applied optics and optical engineering, and comprises a resonant optical tunneling structure composed of a plurality of InP layers and SiO2 layers arranged alternately, wherein the optical refractive index of the InP layer is regulated by using bias auxiliary light injection, and then the photonic spin Hall effect is regulated; by the method, the spin-related displacement generated by the photonic spin Hall effect can be effectively regulated, and a new regulation method is provided for the photonic spin Hall effect.

The invention belongs to the field of integrated circuit design, and particularly relates to a floating-point number multiplication and accumulation processor based on a spinning electron storage device. A magnetic domain wall device (which is a nonvolatile memory device and has the advantages of non-volatility, high density, zero static power consumption, high durability and the like) driven by the spin Hall effect is utilized to efficiently realize in-situ write-in, read-out and shift operation of data, the magnetic domain wall device is combined to be used for multiplication and accumulation of floating-point numbers, MAC operation of the floating-point numbers is realized by using an analog circuit and a magnetic device, and the device is simple in structure and convenient to operate. And exponential part operation is carried out on a time domain, and a mantissa alignment function is realized by using a magnetic device, so that the total power consumption of the circuit is greatly reduced, and energy-saving optimization of the circuit is realized. According to the method, the inherent defects of high calculation power consumption of a traditional CMOS scheme and low volatility and density of an SRAM scheme are fundamentally avoided, and finally high-performance and high-energy-efficiency AI calculation far higher than the level of the prior art is achieved.

The application belongs to but is not limited to the technical field of condensed matter physics and quantum functional devices, and discloses a two-dimensional topological superconducting device with negative magnetoresistance and spin Hall effect. The device is based on a single-layer In2O two-dimensional material to construct a device system. By utilizing the II-type Dirac point structure formed near the Fermi level of the material, and splitting into Weyl points with non-zero topological charge under the spin-orbit coupling effect, a nontrivial topological electronic structure is formed in the momentum space. The two-dimensional topological superconducting device proposed in the application theoretically realizes the unification of topological state, negative magnetoresistance, spin Hall effect and superconducting behavior in the same material system, avoids the shortcomings of relying on complex heterostructures or multi-material systems in the prior art, and has the advantages of simple structure, easy integration and synergistic regulation of multiple physical effects.

The application provides an optical device for enhancing a photonic spin Hall effect and an application thereof, wherein the optical device is a Kretschmann-Raether structure and sequentially comprises a prism, a glass flat plate and a TDBC coating layer, and incident light is shot into the prism; the optical device has the effect of enhancing the photonic spin Hall effect, and the enhancement capacity is 1.5 to 4 times that of other means; and the effect can be realized under room temperature conditions. An optical refractive index sensor is provided based on the optical device, and when applied, the optical device is used to be placed in a gas to be measured, a Gaussian linearly polarized light is incident on the optical device, a lateral shift amount of reflected light is measured, a refractive index of the gas to be measured is obtained according to a corresponding relationship between the refractive index of the gas and the lateral shift amount of the reflected light, and then the corresponding gas type is deduced from the refractive index.

A spin Hall shift of light-based chirality parameter detection method and system. The method comprises: acquiring the dielectric constant, the magnetic permeability and the radius of chiral nanoparticles under test; on the basis of the dielectric constant, the magnetic permeability and the radius, determining spin Hall shifts of light of chiral nanoparticles having different chirality parameters under duality symmetry conditions, and obtaining a mapping relationship between the spin Hall shifts of light and the different chirality parameters; using circularly polarized light to irradiate the chiral nanoparticles under test to generate a spin Hall effect of light; and under the spin Hall effect of light, adjusting the wavelength of incident light until duality symmetry is satisfied, and obtaining an optimal spin Hall shift of light; and on the basis of the optimal spin Hall shift of light and the mapping relationship, determining a chirality parameter of the chiral nanoparticles under test. The method effectively avoids the occurrence of a destructive effect, improves the capability to characterize near-field chiral information, and enables near-field chiral features to be captured and parsed more accurately and comprehensively.

A memory device including a pair of magnetic conductive posts, a Spin-Hall-Effect-assisted (SHE-assisted) layer, and a magnetic tunneling junction (MTJ) structure. The Spin-Hall-Effect-assisted (SHE-assisted) layer is disposed over and electrically connected to the pair of magnetic conductive posts. The magnetic tunneling junction (MTJ) structure has in-plane magnetic anisotropy, wherein the MTJ structure is disposed on the SHE-assisted layer, and the pair of magnetic conductive posts provide an in-plane magnetic field during a write operation of the MTJ structure.