The invention discloses a bidirectional spin Hall effect-based magnetic non-volatile memory unit structure. The bidirectional spin Hall effect-based magnetic non-volatile memory unit structure comprises a bidirectional spin Hall effect magnetic tunneling junction, a first transistor, a second transistor, a reading word line, a reading bit line, a writing word line, a writing bit line and a source line, wherein the bidirectional spin Hall effect-based novel magnetic tunneling junction comprises a traditional vertical magnetic tunneling junction, a heavy metal layer and a spin Hall effect coupling layer, the vertical magnetic tunneling junction comprises a reference layer, a tunneling insulation layer and a first magnetic free layer from top to bottom, and the spin Hall effect coupling layer comprises a second magnetic free layer and an insulation layer from top to bottom. By the bidirectional spin Hall effect-based magnetic non-volatile memory unit structure, an auxiliary means is not needed, the switching of the resistance of the vertical magnetic tunneling junction among a high-resistance state, a low-resistance state and a random-resistance state is achieved only by controlling a current passing through the heavy metal layer, the writing power consumption of the magnetic memory unit can be effectively reduced, and the writing operation time of the magnetic memory unit is shortened.