49 results about "Spin Hall effect" patented technology

The present disclosure generally relates to a magnetic recording device comprising a current-in-plane (CIP) spin orbit torque (SOT) device. The SOT device comprises a topological material (TM) layer and one or more free layers. The TM layer may be recessed from the MFS, and may comprise BiSb or YPtBi. Current is configured to flow in-plane into the TM layer. In one embodiment, one or more free layers are disposed on a same surface of the TM layer. In another embodiment, one or more free layers are disposed on opposite surfaces of the TM layer. In embodiments, comprising two or more free layers, voltage outputs read from at least two of the two or more free layers are opposite, and the two free layers have opposite polarities. In another embodiment, the SOT device comprises four free layers arranged in a bridge configuration.

The invention provides a magnetic superconducting memory and a preparation method and a read-write method thereof. According to the magnetic superconducting memory, the superconducting layer maps the magnetization state by using the resistance difference between the superconducting state and the normal state; the ferromagnetic layer serves as a free layer capable of adjusting magnetization, and the magnitude of superconductive critical current of the superconductive layer is influenced through the magnetization direction. The heavy metal layer generates spin orbit torque through a spin Hall effect to drive the ferromagnetic layer to be magnetized and overturned; an infinite switching ratio between a superconducting state and a normal state is realized through a superconducting diode magnetoresistance effect, a high-efficiency and high-reliability nonvolatile storage scheme is realized in combination with a current-driven spin-orbit torque magnetization overturning technology, inherent defects of a traditional TMR are thoroughly overcome, and the signal contrast of a storage unit is remarkably improved; the heterostructure designed by the invention replaces a traditional magnetic tunnel junction, reduces material stacking and process complexity, and adopts a material compatible with a CMOS (Complementary Metal-Oxide-Semiconductor Transistor) process to promote large-scale integration of the low-temperature memory.

A memory device includes a spin-orbit-transfer (SOT) bottom electrode, an SOT ferromagnetic free layer, a first tunnel barrier layer, a spin-transfer-torque (STT) ferromagnetic free layer, a second tunnel barrier layer and a reference layer. The SOT ferromagnetic free layer is over the SOT bottom electrode. The SOT ferromagnetic free layer has a magnetic orientation switchable by the SOT bottom electrode using a spin Hall effect or Rashba effect. The first tunnel barrier layer is over the SOT ferromagnetic free layer. The STT ferromagnetic free layer is over the first tunnel barrier layer and has a magnetic orientation switchable using an STT effect. The second tunnel barrier layer is over the STT ferromagnetic free layer. The second tunnel barrier layer has a thickness different from a thickness of the first tunnel barrier layer. The reference layer is over the second tunnel barrier layer and has a fixed magnetic orientation.

The invention provides a microwave phase measurement system based on magneton-photon coupling characteristics. According to the system, an integrated electrode support / GGG / YIG / Pt multilayer structure is embedded in a microwave cavity, and magnetons carry microwave phase information through coupling of the magnetons and photons in the YIG. Magneton precession of the YIG layer causes spin current to be generated in the Pt layer, the spin current is converted into measurable voltage signals through inverse spin Hall effect, and high-resolution phase measurement is realized by means of frequency mixing, coherent detection and the like. The method is high in anti-interference capability, can realize high-sensitivity and low-cost microwave phase measurement, and is expected to be used in the fields of spintronics, microwave measurement, quantum information reading and the like.

The present invention provides a non-uniformly magnetized storage unit. The storage unit includes a spin Hall effect layer and two parallel magnetic tunnel junctions located on the same side surface of the spin Hall effect layer. Each magnetic tunnel junction includes: a free layer, a barrier layer, and a reference layer stacked sequentially in a direction away from the spin Hall effect layer. The two reference layers have fixed magnetization directions. The two magnetic tunnel junctions have different shapes, or the two magnetic tunnel junctions have the same shape but are arranged differently on the spin Hall effect layer, so that the slopes of the easy magnetization axes of the two magnetic tunnel junctions are opposite in sign, so that when the spin Hall effect layer is energized, the two free layers exhibit opposite magnetization directions. When energized, the free layers in the two magnetic tunnel junctions do not require an external magnetic field. By passing currents in different directions, the two magnetic tunnel junctions are always in complementary resistance states, and differential storage is achieved by reading signals, thereby saving the area of ​​the storage unit and reducing costs.

The present disclosure relates to magnetic devices such as magnetic transistors and magnetic memories that are regulated by magnetic spin transfer torque. According to one embodiment, a magnetic device based on magnetic spin transfer torque can include a first spin Hall effect layer, a first ferromagnetic insulating layer formed on the first spin Hall effect layer, an anti-ferromagnetic insulating layer formed on the first ferromagnetic insulating layer, a second ferromagnetic insulating layer formed on the anti-ferromagnetic insulating layer, and a second spin Hall effect layer formed on the second ferromagnetic insulating layer.

Disclosed are a spin-orbit torque magnetic tunnel junction and a majority gate spin logic device and a cascade thereof, in the magnetic tunnel junction, comprising, from top to bottom, an electrode layer, an artificial antiferromagnetic reference layer, an insulating tunneling layer, a magnetized free layer, and an abnormal spin-orbit torque layer, wherein the artificial antiferromagnetic reference layer comprises, from top to bottom, a first ferromagnetic layer, a non-magnetic spacer layer, and a second ferromagnetic layer, the first ferromagnetic layer has a fixed direction of perpendicular magnetization; the electrode layer in contact with the first ferromagnetic layer has an in-plane polarization to adjust the magnetization direction of the second ferromagnetic layer, the magnetic free layer has a variable direction of perpendicular magnetization; the abnormal spin-orbit torque layer in contact with the magnetic free layer has an in-plane magnetization direction to generate an abnormal spin Hall effect to make the magnetic free layer magnetization flip, thereby changing the spin-orbit torque magnetic tunnel junction resistance state and realizing a logic function.

The application discloses a kind of chiral molecule identification systems based on frustrated total internal reflection light spin hall effect, in turn including front selection light path, enhancement chip structure, rear selection light path and electric coupling element CCD, pass through the light path enhancement light spin hall effect, so that CCD can capture light spot, and spin transverse value can be read out, simultaneously propose a kind of chiral molecule identification method based on frustrated total internal reflection light spin hall effect, utilize the light spin transverse value in the light intensity data read by identification system, and according to light spin transverse value, solve the rotation angle, then the calculated rotation angle solves the specific rotation of chiral molecule solution, and according to the specific rotation of chiral molecule solution calculated, the category of corresponding molecular material is obtained, and the method is suitable for the identification of all chiral molecule solutions.

Magnetoelectric spin-orbit (MESO) devices, integrated circuit devices and systems with MESO devices, and methods of forming the same, are disclosed herein. In one embodiment, a semiconductor device includes: a first layer including a conductive material; a second layer over the first layer, where the second layer includes a magnetoelectric material; one or more third layers over the second layer, where the third layer(s) include one or more ferromagnetic materials; a fourth layer over the third layer(s), where the fourth layer includes a superlattice with a heavy metal and a dielectric material; and a fifth layer over the fourth layer, where the fifth layer includes a material having low spin-orbit coupling.

The present invention relates to probabilistically controllable random number generators. According to one embodiment, a random number generator includes a spin current generating layer formed of a spin Hall effect conductive material and a spintronic device disposed thereon. The spintronic device includes a free magnetic layer disposed on the spin current generating layer, a non-magnetic intermediate layer disposed on the free magnetic layer, and a reference magnetic layer disposed on the non-magnetic intermediate layer. The spin current generating layer is configured to receive a first in-plane current in a first direction to rotate a magnetic moment of the free magnetic layer from an easy axis direction to a hard axis direction, and upon cessation of the first in-plane current, the magnetic moment of the free magnetic layer is randomly rotated from the hard axis direction back to either a positive direction or a negative direction of the easy axis. A magnetic moment of the reference magnetic layer is fixed in either the positive direction or the negative direction of the easy axis. The spintronic device is configured to receive a perpendicular current to read a resistance state of the spintronic device.

The application provides a visible band photonic spin Hall device based on a plasmonic metasurface, which comprises: an anisotropic metasurface, which is designed based on a PB geometric phase principle and is formed by periodic arrangement of supercells; the supercells are arranged by homochiral superatoms every interval p and rotation angle by turns, so that the last superatom of each supercell rotates 180 DEG relative to the first superatom; the superatom is a half-wave plate working in a wide frequency visible light band, that is, when left-handed or right-handed circularly polarized light is incident on the superatom, the reflected light is converted into right-handed or left-handed circularly polarized light; under parallel circularly polarized light incidence, the reflected circularly polarized light of the metasurface device follows the generalized Snell law, and left-handed light and right-handed light are reflected towards opposite directions respectively, that is, a photonic spin Hall effect is generated.

The present invention provides a method for regulating the spin-orbit torque efficiency of a heavy metal / ferromagnetic heterojunction, relating to the field of spintronic devices. The method comprises: introducing a vanadium-based oxide with electronic phase change characteristics on the heavy metal side to prepare a vanadium-based oxide layer / heavy metal layer / ferromagnetic layer multilayer heterojunction; applying a current to the vanadium-based oxide layer to generate an orbital current perpendicular to the current direction based on the orbital Hall effect, which flows into the heavy metal layer through interlayer coupling and is converted into a spin current perpendicular to the film surface. The spin current is superimposed with the spin current generated by the spin Hall effect of the heavy metal layer and then injected into the ferromagnetic layer, thereby enhancing the spin-orbit torque and improving the spin-orbit torque efficiency; and triggering the electronic phase change of the vanadium-based oxide layer through external excitation to dynamically adjust the orbital current density and achieve regulation of the spin-orbit torque efficiency. The present invention does not require changing the heterojunction material composition or structure, and can achieve dynamic regulation of the spin-orbit torque efficiency by introducing a phase change material.

The invention relates to a magnetoresistive memory cell comprising: a pillar (MTJ) forming a magnetic tunnel junction (MTJ) and a write track (SOT) made of a spin Hall effect material or an orbital Hall effect material; a support layer (14) made of a material having a configurable metal-insulator transition; a first electrode (EL1) disposed on the support layer (14); the portion (143) of the support layer (14) confined between the first electrode (EL1) and the write track (SOT) forming a first selector (S1); a second electrode (EL2) disposed on the support layer (14); the portion (144) of the support layer (14) confined between the second electrode (EL2) and the write track (SOT) forming a second selector (S2). Figure for the abstract: Fig. 1a

A magnetic memory device is provided. The magnetic memory device includes a spin orbit layer including a non-magnetic element exhibiting a spin Hall effect, a magnetic tunnel junction layer including a free layer, a tunnel barrier layer, and a pinned layer sequentially stacked on a first surface, the magnetic tunnel junction layer having perpendicular magnetic anisotropy (PMA), and a lower magnetic layer on the second surface, the lower magnetic layer having in-plane magnetic anisotropy (IMA), wherein the free layer includes a first sub-free layer and a second sub-free layer each including a magnetic element, and wherein a first concentration of the magnetic element in the first sub-free layer and a second concentration of the magnetic element in the second sub-free layer are different from each other.

The present invention relates to artificial antiferromagnetic multilayer film structures and magnetic random access memories including the same. According to an embodiment, an artificial antiferromagnetic multilayer film structure can include: an in-plane field coupling layer including a first ferromagnetic layer and a second ferromagnetic layer formed of a ferromagnetic conductive material, and a first spacer layer located between the first and second ferromagnetic layers, the first spacer layer being formed of a non-magnetic conductive material and inducing antiferromagnetic coupling between the first and second ferromagnetic layers; a free magnetic layer including a third ferromagnetic layer and a fourth ferromagnetic layer formed of a ferromagnetic conductive material, and a spin Hall effect layer located between the third and fourth ferromagnetic layers, the spin Hall effect layer being formed of a material having a spin Hall effect and inducing antiferromagnetic coupling between the third and fourth ferromagnetic layers; and an intermediate layer located between the in-plane field coupling layer and the free magnetic layer, the intermediate layer being formed of a non-magnetic material.

A memory circuit includes a read circuit and a memory array (M1, M2) including at least one magnetoresistive memory cell, the memory cell including: a pillar; a write track made of a material exhibiting the spin Hall effect or a material exhibiting the orbital Hall effect; a first selector and a second selector, each selector being configured to switch from an off state to an on state when the amplitude of the voltage across the terminals of the selector is higher than a predetermined threshold voltage Vth; the read circuit including: a current source configured to inject a read current (Iread) through the first selector; a detect circuit configured to detect when the second selector switches from an off state to an on state in response to injection of the read current (Iread) by detecting the resistive state of the magnetic tunnel junction.

A magnetoresistive memory cell includes a pillar forming a magnetic tunnel junction and a write track made of a spin Hall effect material or an orbital Hall effect material; a support layer made of a material with a configurable metal-insulator transition; a first electrode arranged on the support layer; the part of the support layer confined between the first electrode and the write track forming a first selector; a second electrode arranged on the support layer; the part of the support layer confined between the second electrode and the write track forming a second selector.

A magnetic memory element includes an antiferromagnetic layer having a uniaxial strain and made of an antiferromagnetic metal containing manganese, a spin torque being configured to allow manipulation of a magnetic order of the antiferromagnetic metal.A magnetic memory element includes: a spin Hall layer made of a material that exhibits a spin Hall effect, a write current flowing through the spin Hall layer in an in-plane direction being configured to generate a spin current; a free layer stacked on the spin Hall layer, having a uniaxial strain, and made of an antiferromagnetic metal containing manganese, the spin current being configured to induce a spin-orbit torque that allows reversal of a magnetic order of the antiferromagnetic metal; a non-magnetic layer on the free layer; and a reference layer stacked on the non-magnetic layer and made of an antiferromagnetic metal containing manganese, a magnetic order of the antiferromagnetic metal being fixed.

The invention relates to the field of structured light field regulation and control and anisotropic medium light propagation, and discloses a method for regulating and controlling a spin Hall effect of a circular Airy beam by using uniaxial crystal and angular modulation. The method comprises the following steps: constructing a circular Airy beam with a self-focusing characteristic; angular phase modulation is applied to the system, so that the circular symmetry of the system is broken; the modulated light beam enters a uniaxial crystal to be propagated, and due to spin-orbit coupling in the crystal, a spin Hall effect is generated: a left-handed circular polarization component and a right-handed circular polarization component are gradually separated from each other and move along the positive axis and the negative axis respectively; after a light beam is emitted out of the uniaxial crystal, two focuses which are spatially separated and opposite in spinning direction are formed on a self-focusing focal plane. The device and the method can be used for structured light beam regulation and control, spin-orbit coupling and polarized light field modulation research.

The present disclosure generally relates to temperature detection devices including a ferromagnetic (FM) material disposed at a media facing surface (MFS). The FM material is configured to produce a first electric voltage signal in response to a temperature gradient due to an anomalous Nernst effect. The temperature detection device may also include a spin-orbit torque (SOT) material abutting the FM material. The SOT material includes at least one of BiSb, a topological insulator, a topological half-Heusler alloy, or a weakly oxidized heavy metal. The SOT material is recessed from the MFS, wherein the SOT material is configured to receive a spin current parallel to the temperature gradient generated by a spin Seebeck effect in the FM material. The spin current is detectable as a second electric voltage signal via an inverse spin Hall effect. The first electric voltage signal is added to the second electric voltage signal.

The present disclosure provides a spin-orbit torque superlattice material, comprising a plurality of superlattice units sequentially stacked to form a multi-period superlattice structure, each of the superlattice units comprising: a spin Hall layer having a spin Hall effect for converting an electric charge flow into a high-density spin flow; a magnetic layer located above the spin Hall layer and flipping a magnetization direction under the action of the spin flow; and a symmetry-breaking layer located above the magnetic layer for breaking spatial inversion symmetry and enhancing magnetic anisotropy of the magnetic layer; the symmetry-breaking layer is an insulating film or a conductive film having a spin Hall angle opposite to that of the spin Hall layer. The present disclosure also provides a magnetic racetrack device and a magnetic tunnel junction device based on the spin-orbit torque superlattice material.

The application provides a parity-time symmetric grating structure and application thereof, wherein the grating structure comprises a cover layer, a grating layer and a substrate which are stacked in sequence, wherein the cover layer and the substrate are transparent media; the grating layer is composed of ridge regions and groove regions which are periodically and alternately arranged in the transverse direction, the ridge regions and the groove regions are optical loss material and optical gain material respectively, and satisfy the parity-time symmetry condition. The application realizes the enhancement of the photonic spin Hall effect by reaching the maximum value of the reflection / transmission coefficient polarization ratio, does not need to rely on singular points, has high outgoing light signal strength, is convenient for practical detection and engineering application, and can be widely applied to the fields of reconfigurable optical switches, high-sensitivity optical sensors, polarization beam splitters, optical encoders and quantum information processing and other spin photon device fields.

The invention relates to the technical field of measurement, and discloses a method for measuring the size of particles in a solution based on a light spin Hall effect. The method comprises the following steps: injecting a light source in a linear polarization state into a to-be-detected solution with to-be-detected particles in a normal incidence manner; respectively collecting a left-handed light spectrum and a right-handed light spectrum at a 90-degree scattering angle; calculating spin spectrum distribution according to the left-handed light spectrum and the right-handed light spectrum; searching and selecting a standard spin spectrum with the smallest error between the standard spin spectrum of the scattered light and the spin spectrum distribution as a standard polarization parameter in a standard library, and acquiring particle size interval information of the particulate matter according to the standard polarization parameter. The invention further provides a device for measuring the particle size of the solution based on the light spin Hall effect, and the device is used for achieving the method. Based on polarization characteristics of light, linearly polarized light is adopted to irradiate a system containing small particles in the solution, and particle size information of the particles in the solution can be calculated by analyzing spin distribution of scattered light.

The invention relates to a current-driven vertical magnetization heterojunction and a magnetic tunnel junction and a preparation method thereof. A vertically magnetized heterojunction structure may include: a spin Hall effect layer including a heavy metal material having a spin Hall effect; a ferromagnetic layer formed on the spin Hall effect layer, including an alloy of a ferromagnetic metal and a rare earth metal, where the spin Hall effect layer is configured to receive a flipping current in a first in-plane direction, the ferromagnetic layer having inclined magnetic anisotropy, the oblique magnetic anisotropy includes a perpendicular magnetic anisotropy component and an in-plane magnetic anisotropy component along a second in-plane direction, the second in-plane direction being perpendicular to the first in-plane direction.

The invention belongs to the technical field of antennas, and relates to a frequency-adjustable and beam-reconfigurable spin electron antenna, which comprises a waveguide layer, a magnetic material layer and a waveguide feed port, the waveguide layer comprises a dielectric plate, a floor and two waveguides; the two waveguides are arranged at an interval and are connected with the floor; the magnetic material layer is arranged on the upper surface of the waveguide layer, and two sides of the magnetic material layer are respectively connected with one corresponding end of the two waveguides; the two waveguide feed ports are respectively arranged at two sides of the waveguide layer, an included angle between the two waveguide feed ports and the waveguide layer is not zero, and the two waveguide feed ports are respectively connected with the other corresponding ends of the two waveguides; a bias static magnetic field is applied to the spin electron antenna, so that the magnetic material layer generates an inverse spin Hall effect, and an electric signal is transmitted between the two waveguides or radiated to the space; and changing the direction and the size of the bias static magnetic field to regulate and control the working frequency and the beam deflection angle of the antenna. According to the invention, frequency regulation and control and wave beam reconfiguration can be realized.

The application provides a photonic spin Hall effect regulation method based on a polar medium core-shell structure, comprising the following steps: constructing a nanoparticle model based on core parameters of a spherical core-shell structure of a silicon dielectric core-silicon carbide polar medium shell; constructing an optical scattering transfer function based on the core parameters and the Mie theory; calculating photonic spin Hall displacement amplitudes of a short-wave side region and a long-wave side region of a full anti-band of a silicon carbide material in a mid-infrared region based on the optical scattering transfer function; regulating the photonic spin Hall displacement amplitudes and the center positions of the short-wave side region and the long-wave side region by adjusting a core-shell ratio; and converting the spherical core-shell structure into an ellipsoidal core-shell structure by adjusting the morphology of the core-shell structure, so as to enhance the photonic spin Hall displacement amplitude and the scattering intensity of the short-wave side region. The application can solve the problems that the photonic spin Hall displacement is difficult to appear in the mid-infrared waveband, the scattering intensity is low, the adjustability is poor, and the application is difficult to be large-scale.

Devices that sense and manipulate magnetic fields based on spin current interactions independent of the spin Hall effect (SHE) in heavy metals. Spin current is generated in ordinary metals through a conversion of out-of-plane orbital current induced by the orbital Hall effect (OHE). The conversion from orbital current to spin current occurs in thin heavy metal layers (a few atomic layers thick), thus greatly reducing the need for heavy metals by replacing them with ordinary metals. Device applications include magnetoresistive sensors for detecting and measuring magnetic fields, and magnetic tunnel junction data storage cells.

The invention provides a photon spin Hall effect device and application thereof. The photon spin Hall effect device comprises a first photonic crystal, a defect layer and a second photonic crystal which are stacked in sequence, the first photonic crystal and the second photonic crystal are both formed by alternately stacking Si and SiO, the first photonic crystal and the second photonic crystal are the same in periodicity, unequal in thickness and opposite in arrangement direction, and SiO layers are arranged on the outermost sides of the first photonic crystal and the second photonic crystal; the defect layer comprises a graphene layer and a SiOO layer. According to the photon spin Hall effect device, on the premise that the physical structure is kept unchanged, dynamic high-sensitivity regulation and control of photon spin displacement can be achieved through external pressure, and the limitation of static structure parameters in a traditional method is overcome; and on the basis of the characteristic that the spin displacement is regulated and controlled through pressure, the method can be applied to various applications such as pressure sensing, tunable photonic devices and optical switches, and has extremely high application prospects.

The application provides a magnetic superconducting memory and a preparation method and a read-write method thereof.The magnetic superconducting memory of the application uses the resistance difference between superconducting states and normal states to map the magnetization state; the ferromagnetic layer is used as an adjustable free layer, and the magnetization direction of the ferromagnetic layer affects the size of the superconducting critical current of the superconducting layer; the heavy metal layer generates a spin-orbit torque through the spin Hall effect to drive the magnetization of the ferromagnetic layer to flip; the application realizes an infinite on-off ratio between superconducting states and normal states through the superconducting diode magnetoresistance effect, and realizes a high-efficiency and high-reliability nonvolatile storage scheme by combining the current-driven spin-orbit torque magnetization flipping technology, which completely overcomes the inherent defects of the traditional TMR and significantly improves the signal contrast of the storage unit; the heterostructure designed in the application replaces the traditional magnetic tunnel junction, reduces the material stacking and process complexity, and uses materials compatible with the CMOS process to promote the large-scale integration of low-temperature memories.