66 results about "Spin Hall effect" patented technology

The present disclosure generally relates to a magnetic recording device comprising a current-in-plane (CIP) spin orbit torque (SOT) device. The SOT device comprises a topological material (TM) layer and one or more free layers. The TM layer may be recessed from the MFS, and may comprise BiSb or YPtBi. Current is configured to flow in-plane into the TM layer. In one embodiment, one or more free layers are disposed on a same surface of the TM layer. In another embodiment, one or more free layers are disposed on opposite surfaces of the TM layer. In embodiments, comprising two or more free layers, voltage outputs read from at least two of the two or more free layers are opposite, and the two free layers have opposite polarities. In another embodiment, the SOT device comprises four free layers arranged in a bridge configuration.

The spin-orbit torque-based device comprises a microwave transmission layer and a microwave absorption layer, and the microwave absorption layer is arranged on the upper surface of the microwave transmission layer; the microwave transmission layer is a CPW coplanar waveguide, and the microwave absorption layer is a ferromagnetic layer / strong spin coupling layer heterojunction. Through the heavy metal / ferromagnetic layer heterojunction, spin-orbit torque is generated by the spin Hall effect in the heavy metal layer to influence the magnetic property of the ferromagnetic layer, the current is directly used as a regulation and control mode, an electromagnet or coil current does not need to be additionally arranged outside the device, and the problem of large size is solved. Meanwhile, the spin-orbit torque is actually regulated and controlled by the current density, microwave tuning of milliampere-level current is achieved by controlling the size of a device, the advantage of low power consumption is achieved, and meanwhile the potential of constructing a device with extremely low power consumption is achieved. And the functional layer can be realized only by the coplanar waveguide and the double-layer film heterojunction, so that the structure is simple and clear.

The present disclosure generally relates to a magnetic recording head comprising one or more spin-orbit torque (SOT) devices, the SOT devices each comprising a bismuth antimony (BiSb) layer. The magnetic recording head comprises a SOT device comprising a first shield extending to a media facing surface (MFS), a seed layer disposed over the first shield, the seed layer being disposed at the MFS, a free layer disposed on the seed layer, the free layer being disposed at the MFS, a bismuth antimony (BiSb) layer disposed over the free layer, the BiSb layer being recessed from the MFS, a second shield disposed over the BiSb layer, the second shield extending to the MFS, and a shield notch coupled to the second shield, the shield notch being disposed between the first shield and the second shield. The magnetic recording head may be a two-dimensional magnetic recording head comprising two SOT devices.

The present disclosure generally relates to a magnetic sensor half bridge circuit. The half bridge circuit comprises a bias source connected to a first leg and a second leg. The first leg comprises one or more first spin-orbit torque (SOT) structures connected in series, each first SOT structure comprising a first ferromagnetic (FM) layer disposed on a first SOT layer. The first SOT layer has a first end connected to ground and a second end connected to a first voltage sensor. The second leg comprises one or more second SOT structures connected in series, each second SOT structure comprising a second FM layer disposed on a second SOT layer. The second SOT layer has a first end connected to a second voltage sensor and a second end connected to a ground. The first voltage sensor is disposed adjacent to the second voltage sensor.

The invention provides a heavy metal / ferromagnetic heterojunction spin orbit torque efficiency regulation and control method, and relates to the field of spin electronic devices, and the method comprises the steps: introducing a vanadium-based oxide with an electronic phase change characteristic at a heavy metal side, and preparing a vanadium-based oxide layer / heavy metal layer / ferromagnetic layer multilayer film heterojunction; current is applied to the vanadium-based oxide layer, orbital flow perpendicular to the current direction is generated based on the orbital Hall effect, the orbital flow flows into the heavy metal layer through interlayer coupling and is converted into spin current perpendicular to the film surface, the spin current and spin current generated by the spin Hall effect of the heavy metal layer are overlaid and then injected into the ferromagnetic layer, and spin orbital torque is enhanced; the spin-orbit torque efficiency is improved; the electronic phase change of the vanadium-based oxide layer is triggered through external excitation, the orbital flow density is dynamically adjusted, and the spin-orbit torque efficiency is regulated and controlled. According to the invention, the dynamic regulation and control of the spin-orbit torque efficiency can be realized by introducing the phase-change material without changing the component or structure of the heterojunction material.

The invention provides a magnetic superconducting memory and a preparation method and a read-write method thereof. According to the magnetic superconducting memory, the superconducting layer maps the magnetization state by using the resistance difference between the superconducting state and the normal state; the ferromagnetic layer serves as a free layer capable of adjusting magnetization, and the magnitude of superconductive critical current of the superconductive layer is influenced through the magnetization direction. The heavy metal layer generates spin orbit torque through a spin Hall effect to drive the ferromagnetic layer to be magnetized and overturned; an infinite switching ratio between a superconducting state and a normal state is realized through a superconducting diode magnetoresistance effect, a high-efficiency and high-reliability nonvolatile storage scheme is realized in combination with a current-driven spin-orbit torque magnetization overturning technology, inherent defects of a traditional TMR are thoroughly overcome, and the signal contrast of a storage unit is remarkably improved; the heterostructure designed by the invention replaces a traditional magnetic tunnel junction, reduces material stacking and process complexity, and adopts a material compatible with a CMOS (Complementary Metal-Oxide-Semiconductor Transistor) process to promote large-scale integration of the low-temperature memory.

A memory device includes a spin-orbit-transfer (SOT) bottom electrode, an SOT ferromagnetic free layer, a first tunnel barrier layer, a spin-transfer-torque (STT) ferromagnetic free layer, a second tunnel barrier layer and a reference layer. The SOT ferromagnetic free layer is over the SOT bottom electrode. The SOT ferromagnetic free layer has a magnetic orientation switchable by the SOT bottom electrode using a spin Hall effect or Rashba effect. The first tunnel barrier layer is over the SOT ferromagnetic free layer. The STT ferromagnetic free layer is over the first tunnel barrier layer and has a magnetic orientation switchable using an STT effect. The second tunnel barrier layer is over the STT ferromagnetic free layer. The second tunnel barrier layer has a thickness different from a thickness of the first tunnel barrier layer. The reference layer is over the second tunnel barrier layer and has a fixed magnetic orientation.

The invention provides a method for carrying out chiral parameter detection by applying optical spin Hall displacement. The method comprises the following steps: acquiring a dielectric constant, magnetic conductivity and a particle radius of a chiral nanoparticle to be detected; according to the dielectric constant, the magnetic conductivity and the particle radius of the to-be-measured chiral nano-particles, determining the light spin Hall displacement of the chiral nano-particles with different chiral parameters under the quasi-dual symmetry condition so as to determine the contrast mapping relation between the light spin Hall displacement and the chiral parameters; under the condition that circularly polarized light irradiates the to-be-measured chiral nanoparticles and generates a light spin Hall effect, the wavelength of incident light is adjusted until quasi-dual symmetry is met, so that the maximization of light spin Hall displacement is realized; and determining the chiral parameter of the to-be-detected chiral nanoparticle under the maximum optical spin Hall displacement according to the contrast mapping relation between the optical spin Hall displacement and the chiral parameter. According to the method, the chiral parameters of the chiral nanoparticles can be intuitively judged according to the magnitude of the spin Hall displacement peak value.

The present invention belongs to the field of precision measurement, and relates to a method for measuring the refractive index of a nanoscale thin film with polarization state modulation based on the in-plane photon spin Hall effect and its application. By establishing a database of the in-plane photon spin splitting displacement varying with the incident polarization state at each refractive index for thin film materials with different thicknesses; placing the nanoscale thin film to be detected on the sample stage, and at a certain incident angle, successively collecting the measurement data of the in-plane photon spin splitting displacement at different incident polarization states. Comparing the measurement data with the corresponding theoretical data in the database, and then determining the refractive index of the measured nanoscale thin film. The detection system of the present invention has a simple structure and is easy to operate, and during the measurement, it is the incident polarization state that is modulated rather than the incident angle. Therefore, the eccentricity error caused by the variation of the incident angle will not be introduced during the measurement process. In addition, what this method measures is the offset of the spot centroid, which is not affected by ambient light. Therefore, this method has the advantages of high measurement accuracy and good stability.

The invention provides a microwave phase measurement system based on magneton-photon coupling characteristics. According to the system, an integrated electrode support / GGG / YIG / Pt multilayer structure is embedded in a microwave cavity, and magnetons carry microwave phase information through coupling of the magnetons and photons in the YIG. Magneton precession of the YIG layer causes spin current to be generated in the Pt layer, the spin current is converted into measurable voltage signals through inverse spin Hall effect, and high-resolution phase measurement is realized by means of frequency mixing, coherent detection and the like. The method is high in anti-interference capability, can realize high-sensitivity and low-cost microwave phase measurement, and is expected to be used in the fields of spintronics, microwave measurement, quantum information reading and the like.

The present invention provides a non-uniformly magnetized storage unit. The storage unit includes a spin Hall effect layer and two parallel magnetic tunnel junctions located on the same side surface of the spin Hall effect layer. Each magnetic tunnel junction includes: a free layer, a barrier layer, and a reference layer stacked sequentially in a direction away from the spin Hall effect layer. The two reference layers have fixed magnetization directions. The two magnetic tunnel junctions have different shapes, or the two magnetic tunnel junctions have the same shape but are arranged differently on the spin Hall effect layer, so that the slopes of the easy magnetization axes of the two magnetic tunnel junctions are opposite in sign, so that when the spin Hall effect layer is energized, the two free layers exhibit opposite magnetization directions. When energized, the free layers in the two magnetic tunnel junctions do not require an external magnetic field. By passing currents in different directions, the two magnetic tunnel junctions are always in complementary resistance states, and differential storage is achieved by reading signals, thereby saving the area of ​​the storage unit and reducing costs.

The present disclosure relates to magnetic devices such as magnetic transistors and magnetic memories that are regulated by magnetic spin transfer torque. According to one embodiment, a magnetic device based on magnetic spin transfer torque can include a first spin Hall effect layer, a first ferromagnetic insulating layer formed on the first spin Hall effect layer, an anti-ferromagnetic insulating layer formed on the first ferromagnetic insulating layer, a second ferromagnetic insulating layer formed on the anti-ferromagnetic insulating layer, and a second spin Hall effect layer formed on the second ferromagnetic insulating layer.

Disclosed are a spin-orbit torque magnetic tunnel junction and a majority gate spin logic device and a cascade thereof, in the magnetic tunnel junction, comprising, from top to bottom, an electrode layer, an artificial antiferromagnetic reference layer, an insulating tunneling layer, a magnetized free layer, and an abnormal spin-orbit torque layer, wherein the artificial antiferromagnetic reference layer comprises, from top to bottom, a first ferromagnetic layer, a non-magnetic spacer layer, and a second ferromagnetic layer, the first ferromagnetic layer has a fixed direction of perpendicular magnetization; the electrode layer in contact with the first ferromagnetic layer has an in-plane polarization to adjust the magnetization direction of the second ferromagnetic layer, the magnetic free layer has a variable direction of perpendicular magnetization; the abnormal spin-orbit torque layer in contact with the magnetic free layer has an in-plane magnetization direction to generate an abnormal spin Hall effect to make the magnetic free layer magnetization flip, thereby changing the spin-orbit torque magnetic tunnel junction resistance state and realizing a logic function.

Provided are a magnetic memory using a spin current, an operating method thereof, and / or an electronic apparatus including the magnetic memory. The magnetic memory includes, first and second wirings spaced apart from each other and intersecting each other, and a data storage layer between the first and second wirings. The data storage layer includes a pinned layer with a fixed magnetic moment, a free layer spaced apart from the pinned layer and not having a fixed magnetic moment, and an insulating tunnel barrier layer provided between the pinned layer and the free layer. Among the first and second wirings, the wiring contacting the free layer includes a conductive wiring having no spin Hall effect, and the free layer includes a two-dimensional material which at room temperature has a spin Hall effect, magnetic properties, and metal properties. The two-dimensional material includes a two-dimensional van der Waals material.

The application discloses a kind of chiral molecule identification systems based on frustrated total internal reflection light spin hall effect, in turn including front selection light path, enhancement chip structure, rear selection light path and electric coupling element CCD, pass through the light path enhancement light spin hall effect, so that CCD can capture light spot, and spin transverse value can be read out, simultaneously propose a kind of chiral molecule identification method based on frustrated total internal reflection light spin hall effect, utilize the light spin transverse value in the light intensity data read by identification system, and according to light spin transverse value, solve the rotation angle, then the calculated rotation angle solves the specific rotation of chiral molecule solution, and according to the specific rotation of chiral molecule solution calculated, the category of corresponding molecular material is obtained, and the method is suitable for the identification of all chiral molecule solutions.

Magnetoelectric spin-orbit (MESO) devices, integrated circuit devices and systems with MESO devices, and methods of forming the same, are disclosed herein. In one embodiment, a semiconductor device includes: a first layer including a conductive material; a second layer over the first layer, where the second layer includes a magnetoelectric material; one or more third layers over the second layer, where the third layer(s) include one or more ferromagnetic materials; a fourth layer over the third layer(s), where the fourth layer includes a superlattice with a heavy metal and a dielectric material; and a fifth layer over the fourth layer, where the fifth layer includes a material having low spin-orbit coupling.

The invention relates to a magnetic material structure for realizing paramagnetic and ferromagnetic phase change by utilizing a spin-orbit coupling effect. According to an exemplary embodiment, a magnetic material structure includes: a spin Hall effect layer formed of a non-magnetic metal material having a spin Hall effect; the paramagnetic layer is formed on the spin Hall effect layer; and an antiferromagnetic layer formed on the paramagnetic layer. The magnetic material structure is configured to receive an in-plane current, when the in-plane current flows through the magnetic material structure, the spin Hall effect layer applies a spin orbit torque to the paramagnetic layer, and under the combined action of the spin orbit torque and the interlayer coupling action from the antiferromagnetic layer, the paramagnetic layer exhibits ferromagnetism. The magnetic material structure can broaden the Curie temperature range of the ferromagnetic material, so that the magnetic device can work in a wider temperature range. The invention also provides a magnetic device comprising the magnetic material structure, such as a Hall sensor.

The present invention relates to a Giant spin Hall effect material based on MxAl100-x, in which M=5d metal (Lu, Hf, Ta, W, Re, Os, Ir, Pt [=5d1-5d9], and x=15-40. Furthermore, the present invention concerns a method of making such Giant spin Hall effect material and a racetrack memory incorporating the Giant spin Hall effect material.

Provided are a magnetic memory using a spin current, an operating method thereof, and / or an electronic apparatus including the magnetic memory. The magnetic memory includes, first and second wirings spaced apart from each other and intersecting each other, and a data storage layer between the first and second wirings. The data storage layer includes a pinned layer with a fixed magnetic moment, a free layer spaced apart from the pinned layer and not having a fixed magnetic moment, and an insulating tunnel barrier layer provided between the pinned layer and the free layer. Among the first and second wirings, the wiring contacting the free layer includes a conductive wiring having no spin Hall effect, and the free layer includes a two-dimensional material which at room temperature has a spin Hall effect, magnetic properties, and metal properties. The two-dimensional material includes a two-dimensional van der Waals material.

The present invention relates to probabilistically controllable random number generators. According to one embodiment, a random number generator includes a spin current generating layer formed of a spin Hall effect conductive material and a spintronic device disposed thereon. The spintronic device includes a free magnetic layer disposed on the spin current generating layer, a non-magnetic intermediate layer disposed on the free magnetic layer, and a reference magnetic layer disposed on the non-magnetic intermediate layer. The spin current generating layer is configured to receive a first in-plane current in a first direction to rotate a magnetic moment of the free magnetic layer from an easy axis direction to a hard axis direction, and upon cessation of the first in-plane current, the magnetic moment of the free magnetic layer is randomly rotated from the hard axis direction back to either a positive direction or a negative direction of the easy axis. A magnetic moment of the reference magnetic layer is fixed in either the positive direction or the negative direction of the easy axis. The spintronic device is configured to receive a perpendicular current to read a resistance state of the spintronic device.

The application provides a visible band photonic spin Hall device based on a plasmonic metasurface, which comprises: an anisotropic metasurface, which is designed based on a PB geometric phase principle and is formed by periodic arrangement of supercells; the supercells are arranged by homochiral superatoms every interval p and rotation angle by turns, so that the last superatom of each supercell rotates 180 DEG relative to the first superatom; the superatom is a half-wave plate working in a wide frequency visible light band, that is, when left-handed or right-handed circularly polarized light is incident on the superatom, the reflected light is converted into right-handed or left-handed circularly polarized light; under parallel circularly polarized light incidence, the reflected circularly polarized light of the metasurface device follows the generalized Snell law, and left-handed light and right-handed light are reflected towards opposite directions respectively, that is, a photonic spin Hall effect is generated.

The present invention provides a method for regulating the spin-orbit torque efficiency of a heavy metal / ferromagnetic heterojunction, relating to the field of spintronic devices. The method comprises: introducing a vanadium-based oxide with electronic phase change characteristics on the heavy metal side to prepare a vanadium-based oxide layer / heavy metal layer / ferromagnetic layer multilayer heterojunction; applying a current to the vanadium-based oxide layer to generate an orbital current perpendicular to the current direction based on the orbital Hall effect, which flows into the heavy metal layer through interlayer coupling and is converted into a spin current perpendicular to the film surface. The spin current is superimposed with the spin current generated by the spin Hall effect of the heavy metal layer and then injected into the ferromagnetic layer, thereby enhancing the spin-orbit torque and improving the spin-orbit torque efficiency; and triggering the electronic phase change of the vanadium-based oxide layer through external excitation to dynamically adjust the orbital current density and achieve regulation of the spin-orbit torque efficiency. The present invention does not require changing the heterojunction material composition or structure, and can achieve dynamic regulation of the spin-orbit torque efficiency by introducing a phase change material.

The invention relates to a magnetoresistive memory cell comprising: a pillar (MTJ) forming a magnetic tunnel junction (MTJ) and a write track (SOT) made of a spin Hall effect material or an orbital Hall effect material; a support layer (14) made of a material having a configurable metal-insulator transition; a first electrode (EL1) disposed on the support layer (14); the portion (143) of the support layer (14) confined between the first electrode (EL1) and the write track (SOT) forming a first selector (S1); a second electrode (EL2) disposed on the support layer (14); the portion (144) of the support layer (14) confined between the second electrode (EL2) and the write track (SOT) forming a second selector (S2). Figure for the abstract: Fig. 1a

A magnetic memory device is provided. The magnetic memory device includes a spin orbit layer including a non-magnetic element exhibiting a spin Hall effect, a magnetic tunnel junction layer including a free layer, a tunnel barrier layer, and a pinned layer sequentially stacked on a first surface, the magnetic tunnel junction layer having perpendicular magnetic anisotropy (PMA), and a lower magnetic layer on the second surface, the lower magnetic layer having in-plane magnetic anisotropy (IMA), wherein the free layer includes a first sub-free layer and a second sub-free layer each including a magnetic element, and wherein a first concentration of the magnetic element in the first sub-free layer and a second concentration of the magnetic element in the second sub-free layer are different from each other.

The present invention relates to artificial antiferromagnetic multilayer film structures and magnetic random access memories including the same. According to an embodiment, an artificial antiferromagnetic multilayer film structure can include: an in-plane field coupling layer including a first ferromagnetic layer and a second ferromagnetic layer formed of a ferromagnetic conductive material, and a first spacer layer located between the first and second ferromagnetic layers, the first spacer layer being formed of a non-magnetic conductive material and inducing antiferromagnetic coupling between the first and second ferromagnetic layers; a free magnetic layer including a third ferromagnetic layer and a fourth ferromagnetic layer formed of a ferromagnetic conductive material, and a spin Hall effect layer located between the third and fourth ferromagnetic layers, the spin Hall effect layer being formed of a material having a spin Hall effect and inducing antiferromagnetic coupling between the third and fourth ferromagnetic layers; and an intermediate layer located between the in-plane field coupling layer and the free magnetic layer, the intermediate layer being formed of a non-magnetic material.

A memory circuit includes a read circuit and a memory array (M1, M2) including at least one magnetoresistive memory cell, the memory cell including: a pillar; a write track made of a material exhibiting the spin Hall effect or a material exhibiting the orbital Hall effect; a first selector and a second selector, each selector being configured to switch from an off state to an on state when the amplitude of the voltage across the terminals of the selector is higher than a predetermined threshold voltage Vth; the read circuit including: a current source configured to inject a read current (Iread) through the first selector; a detect circuit configured to detect when the second selector switches from an off state to an on state in response to injection of the read current (Iread) by detecting the resistive state of the magnetic tunnel junction.

A magnetoresistive memory cell includes a pillar forming a magnetic tunnel junction and a write track made of a spin Hall effect material or an orbital Hall effect material; a support layer made of a material with a configurable metal-insulator transition; a first electrode arranged on the support layer; the part of the support layer confined between the first electrode and the write track forming a first selector; a second electrode arranged on the support layer; the part of the support layer confined between the second electrode and the write track forming a second selector.

A magnetic memory element includes an antiferromagnetic layer having a uniaxial strain and made of an antiferromagnetic metal containing manganese, a spin torque being configured to allow manipulation of a magnetic order of the antiferromagnetic metal.A magnetic memory element includes: a spin Hall layer made of a material that exhibits a spin Hall effect, a write current flowing through the spin Hall layer in an in-plane direction being configured to generate a spin current; a free layer stacked on the spin Hall layer, having a uniaxial strain, and made of an antiferromagnetic metal containing manganese, the spin current being configured to induce a spin-orbit torque that allows reversal of a magnetic order of the antiferromagnetic metal; a non-magnetic layer on the free layer; and a reference layer stacked on the non-magnetic layer and made of an antiferromagnetic metal containing manganese, a magnetic order of the antiferromagnetic metal being fixed.

The invention relates to the field of structured light field regulation and control and anisotropic medium light propagation, and discloses a method for regulating and controlling a spin Hall effect of a circular Airy beam by using uniaxial crystal and angular modulation. The method comprises the following steps: constructing a circular Airy beam with a self-focusing characteristic; angular phase modulation is applied to the system, so that the circular symmetry of the system is broken; the modulated light beam enters a uniaxial crystal to be propagated, and due to spin-orbit coupling in the crystal, a spin Hall effect is generated: a left-handed circular polarization component and a right-handed circular polarization component are gradually separated from each other and move along the positive axis and the negative axis respectively; after a light beam is emitted out of the uniaxial crystal, two focuses which are spatially separated and opposite in spinning direction are formed on a self-focusing focal plane. The device and the method can be used for structured light beam regulation and control, spin-orbit coupling and polarized light field modulation research.

The present disclosure generally relates to temperature detection devices including a ferromagnetic (FM) material disposed at a media facing surface (MFS). The FM material is configured to produce a first electric voltage signal in response to a temperature gradient due to an anomalous Nernst effect. The temperature detection device may also include a spin-orbit torque (SOT) material abutting the FM material. The SOT material includes at least one of BiSb, a topological insulator, a topological half-Heusler alloy, or a weakly oxidized heavy metal. The SOT material is recessed from the MFS, wherein the SOT material is configured to receive a spin current parallel to the temperature gradient generated by a spin Seebeck effect in the FM material. The spin current is detectable as a second electric voltage signal via an inverse spin Hall effect. The first electric voltage signal is added to the second electric voltage signal.