Current-driven magnetic random access memory and spin logic device

A random access memory and spin logic device technology, applied in static memory, digital memory information, information storage, etc., can solve the problems of difficult manufacturing of wedge-shaped free magnetic layer, limitation of practical application of magnetic tunnel junction, unsuitability for industrial production, etc.

Active Publication Date: 2016-01-27
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although some studies have also shown that for a suitable wedge-shaped free magnetic layer, the magnetic moment can be reversed only by current without an external auxiliary magnetic field, but the wedge-shaped free magnetic layer is difficult to manufacture, so it is not suitable for large-scale industrial production
[0008] In addition, the above problems also limit the practical application of magnetic tunnel junctions in the field of spin logic devices.

Method used

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  • Current-driven magnetic random access memory and spin logic device
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  • Current-driven magnetic random access memory and spin logic device

Examples

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example 1

[0063] Using high vacuum magnetron sputtering equipment with SiO 2 The following thin films are deposited sequentially on the Si substrate of the surface layer: Pt(5nm) / Co(1.0nm) / Al 2 o 3 (3nm) / Co(0.8nm) / Pt(5nm). During the film preparation process, the background vacuum is better than 1.0×10 -5 Pa. The bottom Pt can be used as SHE layer, the top Pt can be used as protective layer, Co / Al 2 o 3 / Co constitutes the core region of the magnetic tunnel junction. Underlying Pt / Co / Al 2 o 3 The structure can ensure that the Co film as a free magnetic layer has good perpendicular anisotropy, while the top layer of Al 2 o 3 The / Co / Pt structure can ensure that the Co film used as a reference magnetic layer has good vertical anisotropy. The thickness of the Co layer used as the reference magnetic layer is 0.8 nm, which is less than 1.0 nm of the thickness of the Co layer used as the free magnetic layer, thereby ensuring that the reference magnetic layer has a larger coercive fo...

example 2

[0065] Using high vacuum magnetron sputtering equipment with SiO 2 The following thin films are deposited sequentially on the Si substrate of the surface layer: Ta(5nm) / Co 40 Fe 40 B 20 (1.2nm) / MgO(2.5nm) / Co 40 Fe 40 B 20 (1.0nm) / Ta(5nm) / Ru(5nm). During the film preparation process, the background vacuum is better than 1.0×10 -5 Pa. The bottom Ta is used as the SHE layer, and the top Ru layer is used as the protective layer. co 40 Fe 40 B 20 / MgO / Co 40 Fe 40 B 20 Constitutes the core region of the magnetic tunnel junction. Underlying Ta / Co 40 Fe 40 B 20 / MgO structure can guarantee Co as a free magnetic layer 40 Fe 40 B 20 The film has good vertical anisotropy, while the top MgO / Co 40 Fe 40 B 20 / Ta structure can guarantee the Co 40 Fe 40 B 20 The film has good vertical anisotropy. After the film was prepared, the sample was annealed in a vacuum annealing furnace at 300 °C and a magnetic field of 0.8 T for 1 hour, wherein the direction of the magneti...

example 3

[0081] Using high vacuum magnetron sputtering equipment with SiO 2 Prepare the following structure on the Si substrate of the surface layer: Ta(5nm) / Co 40 Fe 40 B 20 (1.2nm) / MgO(3nm) / Co 40 Fe 40 B 20 (0.8nm) / Ta(5nm) / Ru(5nm). During the preparation process, the background vacuum is better than 1.0×10 -5 Pa. Ru in the top layer can be used as a protective layer. co 40 Fe 40 B 20 / MgO / Co 40 Fe 40 B 20 Constitutes the core part of the magnetic tunnel junction. Underlying Ta / Co 40 Fe 40 B 20 / MgO structure can guarantee Co as a free magnetic layer 40 Fe 40 B 20 With perpendicular anisotropy, top MgO / Co 40 Fe 40 B 20 / Ta structure can guarantee the Co 40 Fe 40 B 20 Layers have perpendicular anisotropy. After the film was prepared, the sample was annealed in a vacuum annealing furnace at 325° C. and a magnetic field of 0.8 T for 1 hour. It should be noted that the direction of the magnetic field deviates from the Z-axis direction to, for example, the Y-axi...

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Abstract

The invention relates to a current-driven magnetic random access memory and a spin logic device. The current-driven magnetic random access memory comprises a plurality of memory cells, and each memory cell comprises a magnetic tunnel junction, wherein the magnetic tunnel junction includes a free magnetic layer, a reference magnetic layer and a barrier layer located between the free magnetic layer and the reference magnetic layer, and the reference magnetic layer is coupled to a first terminal; and a spin Hall effect SHE layer adjacent to the free magnetic layer and contacted with the free magnetic layer, wherein the SHE layer is coupled to a second terminal, a third terminal, a fourth terminal and a fifth terminal at the periphery, and a phantom line connected with the second terminal and the fourth terminal is crossed with a phantom line connected with the third terminal and the fifth terminal. The invention further provides electronic equipment including at least one of the current-driven magnetic random access memory and the spin logic device.

Description

technical field [0001] The present invention relates generally to spintronics, and more particularly to a current-driven magnetic random access memory and spin logic device capable of flipping the magnetic The direction of magnetization of the free magnetic layer of a tunnel junction (MTJ), and also to electronic devices comprising such current-driven magnetic random access memories and / or spin logic devices. Background technique [0002] Magnetic tunnel junctions (MTJs) have a wide variety of applications, such as in magnetic sensors, magnetic memories, spin logic devices, and the like. Magnetic random access memory (MRAM), which is mainly composed of magnetic tunnel structures, is a strong competitor for the next generation of non-volatile memory. A memory cell of an MRAM generally includes a magnetic tunnel junction as a core element and other auxiliary functional elements. The magnetic tunnel junction generally includes a free magnetic layer, a reference magnetic layer...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/16
CPCG11C11/161G11C11/1659
Inventor 万蔡华张轩韩秀峰
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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