MRAM (Magnetic Random Access Memory) assisted by spin Hall effect

A spin Hall effect, random access memory technology, applied in the field of magnetic random access memory, can solve problems such as increased error rate, interference, and reduced signal-to-noise ratio, and achieves the effects of low power consumption, shortened distance, and reduced interference

Inactive Publication Date: 2016-03-09
CETHIK GRP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, a thicker horizontal magnetization layer also interferes with adjacent

Method used

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  • MRAM (Magnetic Random Access Memory) assisted by spin Hall effect
  • MRAM (Magnetic Random Access Memory) assisted by spin Hall effect

Examples

Experimental program
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Effect test

Embodiment 1

[0020] Embodiment 1: as figure 1 As shown, a magnetic random access memory assisted by a spin Hall effect is composed of a metal electrode 2, a magnetic tunnel junction 1, a heavy metal layer 3 generating a spin Hall effect, an insulating layer 4, and a magnetic layer 5 generating a bias magnetic field; The heavy metal layer 3 producing the spin Hall effect is arranged under the magnetic tunnel junction 1; the insulating layer 4 is sandwiched between the magnetic layer 5 and the heavy metal layer 3; the metal electrode 2 is connected to the heavy metal layer 3 through the magnetic tunnel junction 1. Wherein, the magnetic tunnel junction 1 includes a ferromagnetic perpendicular magnetization fixed layer I101 and a perpendicular magnetization fixed layer II103, an antiferromagnetic coupling layer 102, a nonmagnetic tunneling layer 104, a perpendicular magnetization recording layer 105, and the recording layer 105 is in a nonmagnetic underneath the tunneling layer 104 . The magn...

Embodiment 2

[0026] Embodiment 2: as figure 2As shown, a magnetic random access memory assisted by a spin Hall effect is composed of a metal electrode 2, a magnetic tunnel junction 1, a heavy metal layer 3 generating a spin Hall effect, an insulating layer 4, and a magnetic layer 5 generating a bias magnetic field; The heavy metal layer 3 producing the spin Hall effect is arranged above the magnetic tunnel junction 1; the insulating layer 4 is sandwiched between the magnetic layer 5 and the heavy metal layer 3; the metal electrode 2 is connected to the heavy metal layer 3 through the magnetic tunnel junction 1. Among them, the magnetic tunnel junction 1 includes a ferromagnetic vertical pinned layer I101, a vertical pinned layer II103, an antiferromagnetic coupling layer 102, a nonmagnetic tunneling layer 104, a perpendicular recording layer 105, a heavy metal layer 3, an insulating layer 4, and a magnetic layer. 5. The perpendicular recording layer 105 is above the non-magnetic tunnelin...

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Abstract

The invention relates to an MRAM assisted by the spin Hall effect. The spin Hall effect is utilized to reduce the power consumption of the MRAM, a magnetic layer is placed on or under a heavy metal layer that can generate the spin Hall effect, and the magnetic layer is separated from a metal electrode by an insulation layer. According to the invention, the distance between a horizontal magnetized layer and a recording layer can be effectively reduced, and interference in adjacent recording bits is reduced.

Description

technical field [0001] The invention relates to the field of magnetic random access memory, in particular to a magnetic random access memory assisted by spin Hall effect. Background technique [0002] Magnetic Random Access Memory (MRAM) is a non-volatile memory consisting of an array of Magnetic Tunnel Junctions (MTJs) interconnected by circuits. Each MTJ contains a magnetic recording layer and a pinned layer. The recording layer and the pinned layer are separated by a non-magnetic tunneling layer. When the MTJ works normally, the magnetization direction of the recording layer can be changed, while the magnetization direction of the fixed layer remains unchanged. The resistance of the MTJ is related to the relative magnetization directions of the recording layer and the pinned layer. When the magnetization direction of the recording layer changes relative to the magnetization direction of the pinned layer, the resistance value of the MTJ changes accordingly, correspondin...

Claims

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Application Information

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IPC IPC(8): H01L43/06G11C11/18
Inventor 李辉辉左正笏徐庶蒋信韩谷昌刘瑞盛孟皓刘波
Owner CETHIK GRP
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