Spinning logic device and electronic device comprising same

A spin logic device and logic technology, applied in the field of spin electronics, can solve problems such as limiting the practical application of spin logic devices, large current, and inconvenient manufacturing

Active Publication Date: 2016-04-20
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

First, it contains too much wiring, the structure is very complicated, and it is not easy to manufacture
Second, because it completely relies on the Oersted magnetic field generated by the current to flip the magnetization direction of the ferromagnetic layer, in order to generate a strong enough Oersted magnetic field to achieve the flip, a large current needs to be applied, thus resulting in energy consumption of the logic device very high
The above drawbacks limit the practical application of state-of-the-art spin logic devices

Method used

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  • Spinning logic device and electronic device comprising same
  • Spinning logic device and electronic device comprising same
  • Spinning logic device and electronic device comprising same

Examples

Experimental program
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Embodiment Construction

[0031] Exemplary embodiments of the present invention will be described below with reference to the accompanying drawings.

[0032] figure 2 A schematic structural diagram of a spin logic device 200 according to an embodiment of the present invention is shown. Such as figure 2 As shown, the spin logic device 200 includes a magnetic tunnel junction 210 , a spin Hall effect (SHE) layer 220 below the magnetic tunnel junction 210 and a current wiring 230 above the magnetic tunnel junction 210 .

[0033] The SHE layer 220 may be connected to wiring to receive input current. For example, if figure 2As mentioned, the -Y side of the SHE layer 220 may have connection terminals 222 and 224 to respectively receive the first input current I 1 and the second input current I 2 , the first input current I 1 and the second input current I 2 Both are in-plane currents, that is, flow through the layer plane of the SHE layer 220 instead of flowing perpendicular to the layer plane. exi...

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PUM

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Abstract

The invention relates to a spinning logic device and an electronic device comprising the same. The spinning logic device comprises a spinning Hall effect (SHE) layer, a magnetic tunnel junction and current wiring, wherein the SHE layer is made of conductive materials with the SHE and used for receiving first input current and second input current in the first direction, the magnetic tunnel junction is located on the SHE layer, the magnetic tunnel junction is provided with a free magnetic layer, a reference magnetic layer and a barrier layer located between the free magnetic layer and the reference magnetic layer, the free magnetic layer makes direct contact with the SHE layer, the current wiring extends in the second direction above the magnetic tunnel junction and is electrically connected to the magnetic tunnel junction, the second direction and the first direction intersect with each other, and the current wiring is used for receiving third input current so as to generate a magnetic field at the magnetic tunnel junction.

Description

technical field [0001] The present invention relates generally to spintronics, and more particularly, to a spin logic device and an electronic device including the spin logic device. Background technique [0002] Digital logic devices designed using the electron spin properties of magnetic materials are called spin logic devices or magnetic logic devices. Compared with ordinary semiconductor logic devices, this reconfigurable logic device based on spin-related transport characteristics has high operating frequency, unlimited reconfiguration times, non-volatile logic information, radiation protection, and magnetic random storage. Because of its advantages such as compatibility with memory (MRAM), it is considered to be a strong candidate for the next generation of logic devices to replace traditional semiconductor logic devices. [0003] figure 1 A prior art spin logic device 100 is shown, the core unit of which is a magnetic tunnel junction MTJ, which includes two ferromag...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/06H01L43/08
CPCH10N52/00H10N50/10
Inventor 张轩万蔡华韩秀峰
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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