Spinning logic device and electronic device comprising same

Abstract

The invention relates to a spinning logic device and an electronic device comprising the same. The spinning logic device comprises a spinning Hall effect (SHE) layer, a magnetic tunnel junction and current wiring, wherein the SHE layer is made of conductive materials with the SHE and used for receiving first input current and second input current in the first direction, the magnetic tunnel junction is located on the SHE layer, the magnetic tunnel junction is provided with a free magnetic layer, a reference magnetic layer and a barrier layer located between the free magnetic layer and the reference magnetic layer, the free magnetic layer makes direct contact with the SHE layer, the current wiring extends in the second direction above the magnetic tunnel junction and is electrically connected to the magnetic tunnel junction, the second direction and the first direction intersect with each other, and the current wiring is used for receiving third input current so as to generate a magnetic field at the magnetic tunnel junction.

Description

technical field [0001] The present invention relates generally to spintronics, and more particularly, to a spin logic device and an electronic device including the spin logic device. Background technique [0002] Digital logic devices designed using the electron spin properties of magnetic materials are called spin logic devices or magnetic logic devices. Compared with ordinary semiconductor logic devices, this reconfigurable logic device based on spin-related transport characteristics has high operating frequency, unlimited reconfiguration times, non-volatile logic information, radiation protection, and magnetic random storage. Because of its advantages such as compatibility with memory (MRAM), it is considered to be a strong candidate for the next generation of logic devices to replace traditional semiconductor logic devices. [0003] figure 1 A prior art spin logic device 100 is shown, the core unit of which is a magnetic tunnel junction MTJ, which includes two ferromag...

AI Technical Summary

Problems solved by technology

First, it contains too much wiring, the structure is very complicated, and it is not easy to manufacture

Second, because it completely relies on the Oersted magnetic field generated by the current to flip the magnetization direction of the ferromagnetic layer, in order to generate a strong enough Oersted magnetic field to achieve the flip, a large current needs to be applied, thus resulting in energy consumption of the logic device very high

The above drawbacks limit the practical application of state-of-the-art spin logic devices

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