32 results about "Oersted" patented technology

A Q-Chip MEMS magnetic device comprises a thin-film electronic circuit for implantation in the Track-2 area of a magnetic stripe on the back of a credit card. The Q-Chip MEMS magnetic device periodically self-generates new sub-sets of magnetic data that are to be read in combination with other magnetic data that is permanently recorded in the surrounding surface of the magnetic stripe. A collocated battery and microcontroller provide operating power and new data for magnetic bit updates. A swipe sensor triggers such updates by sensing electrical contact with a legacy card reader. Several thin-film coils of wire are wound end-to-end around a common, flat, ferrous core. These are driven by the microcontroller. In one instance, such core comprises “hard” magnetic material with a coercivity of 200-300 Oersteds. Magnetic data written from the corresponding adjacent coils will persist for later readings by a legacy card reader. In another instance, the core comprises “soft” magnetic material with a coercivity of about one Oersted. A media stripe of “hard” magnetic film material overlays respective coils to receive magnetic data transfers. Magnetic data written from the corresponding adjacent coils will persist in the overlaying hard media for later readings by a legacy card reader. In a data input mode, the thin-film coils can be used as readers to provide updates and new programming to the microcontroller.

A developing method is provided in which a developer is carried on a developer carrying member, a thin layer of the developer is formed thereon and a latent image on a latent image bearing member is developed with a developer. The developer is composed of magnetic toner particles containing a binder resin and a magnetic powder. The magnetic powder has a saturation magnetization of 67.0 Am2 / kg to 75.0 Am2 / kg in a magnetic field of 79.6 kA / m (1,000 oersteds) and has a residual magnetization of 4.5 Am2 / kg or less. In the surface profile of the conductive resin coat layer of the developer carrying member, the relationship 1.00≦S / A≦1.65 is satisfied where S is a surface area of regions zoned by an area A of microscopic unevenness regions from which parts exceeding a reference plane by 0.5×r (r: weight average particle diameter (μm) of a toner used) or more have been excluded.

A developing apparatus, a process cartridge and an image forming apparatus which form an image whose image density can be maintained, which form a fogged image and which form an image of uneven density within an acceptable range, even when the diameter of a developer carrying member is not more than 12 mm. The apparatus includes a developer carrying member whose outer diameter is in the range of 8 mm to 12 mm, and a magnetic mono-component developer 43 having a saturation magnetization of in a range of 20 Am2 / kg to 37 Am2 / kg when the magnetic field of 79.6 kA / m (1000 oersteds) is applied, the magnetization of not less than 70% and not more than 80% of the saturation magnetization when the magnetic field is lowered to 55.7 kA / m (700 oersteds), and the magnetization of not less than 50% and not more than 62% of the saturation magnetization when the magnetic field is lowered to 39.8 kA / m (500 oersteds).

A developing apparatus, a process cartridge and an image forming apparatus of which the image density can be maintained and the fogged image and the uneven density can be within an acceptable level even when the diameter of a developer carrying member is not more than 12 mm. The outer diameter of the developer carrying member 41 is not less than 8 mm and not more than 12 mm, and a magnetic mono-component developer 43 has a saturation magnetization of not less than 20 Am / kg and not more than 37 Am / kg when the magnetic field of 79.6 kA / m (1000 oersteds) is applied, the magnetization of not less than 70% and not more than 80% of the saturation magnetization when the magnetic field is lowered to 55.7 kA / m (700 oersteds), and the magnetization of not less than 50% and not more than 62% of the saturation magnetization when the magnetic field is lowered to 39.8 kA / m (500 oersteds).

The invention relates to a composite reaction method for low-carbon olefin. A raw material of the low-carbon olefin is fed into a magnetic stabilized bed reactor and subjected to contact reaction with magnetic strong acid resin, the reaction temperature is between 50 and 110 DEG C, the reaction pressure is 0.1 to 0.3MPa, the liquid volume airspeed is 0.5 to 100 h<-1>, and the magnetic field intensity of the magnetic stabilized bed reactor is 10 to 1,500 oersteds. The method uses the magnetic strong acid resin to catalyze the low-carbon olefin to carry out composite reaction in the magnetic stabilized bed reactor, improves the effects of mass transfer and heat transfer of a reaction system greatly, and reduces energy consumption. In actual operation, the method can load and unload a catalyst at any time and carry out ex-situ regeneration without stopping running of the device.

The present invention discloses a method utilizing a femtosecond laser non-mask method to prepare a magnetic sensitive microstructure unit. The method comprises the following steps: (1) manufacturing a magnetic membrane in precipitation mode according to the sequence of a substrate, a buffer layer, a magnetic layer and a protective layer; and (2) using femtosecond laser as a light source, accurately controlling the position of a sample platform through a computer, conducting non-mask irradiation of the magnetic membrane to obtain the magnetic sensitive microstructure unit. Parameters of the femtosecond laser includes that single pulse energy is 5-50 mu joules, the pulse width is 90-150 femtoseconds, the wavelength is 800 nanometers, the pulse frequency is 10-100 hertzes, the movement speed of the sample table is 60-500 micrometers per minute, and an induced magnetic field of 0-500 oersteds is applied along the direction which is paralleled to or perpendicular to the membrane surface of the magnetic membrane during irradiation according to requirements. The method is simple, efficient and controllable, and is without prefabrication of masks.

The invention relates to a method for controlling the domain structure of a free layer to realize ten-state data storage in a magnetic tunnel junction, comprising: (1) measuring the hysteresis loop of the magnetic tunnel junction to find out the initial magnetic field; (2) in the direction of the negative magnetic field Apply an initial magnetic field to the magnetic tunnel junction; (3) apply a positive direction magnetic field to the magnetic tunnel junction, and increase the positive direction magnetic field to the writing magnetic field at an increase rate of 0-200 Oersted / s through the No overshot mode, and obtain A certain multi-magnetic domain state; (4) changing the size of the write magnetic field, and performing steps (2) to (3) to obtain another multi-magnetic domain state; repeating this step until ten kinds of multi-magnetic domain states are obtained; (5) Ten kinds of multi-magnetic domain states are read out. The invention can be directly applied to the existing magnetic tunnel structure, and greatly expands the performance of the current magnetic tunnel junction. The invention has a good application prospect in high-density, low-power consumption novel spintronic memory.