The preparation method comprises the following steps: preparing a bottom-layer superconducting thin film on the surface of a substrate, preparing a bottom-layer superconducting circuit structure on the bottom-layer superconducting thin film, growing a bottom-layer
aluminum thin film in a Josephson junction region, and taking the bottom-layer
aluminum thin film as a lower polar plate of the Josephson junction; preparing an upper-layer superconducting circuit structure on the bottom-layer superconducting circuit structure; feeding into an oxidation chamber, and oxidizing in a controlled oxidation environment to obtain a corresponding
oxide layer on the surface of the bottom aluminum film; after oxidation treatment, an upper-layer aluminum film is evaporated on the upper-layer superconducting circuit structure and stripped to a preset size, the upper-layer superconducting circuit structure serves as an upper polar plate of a Josephson junction, the area of an intersection area of the upper polar plate and a lower polar plate is 35-45 square micrometers, and the high-performance
broadband Josephson parametric
amplifier without an independent
capacitor is achieved; the performance of the Josephson parametric
amplifier is improved; meanwhile, the
process complexity and the requirement for preparation equipment are reduced, the preparation efficiency is high, and the preparation cost is greatly reduced.